Terahertz superconducting plasmonic hole array

We demonstrate a superconductor array of subwavelength holes with active thermal control over the resonant transmission induced by surface plasmon polaritons. The array was lithographically fabricated on a high-temperature yttrium barium copper oxide superconductor and characterized by terahertz time-domain spectroscopy. We observe a clear transition from a virtual excitation of the surface plasmon mode to a real surface plasmon mode. The highly controllable superconducting plasmonic crystals may find promising applications in the design of low-loss, large- dynamic-range amplitude modulation and surface-plasmon-based terahertz devices.     

二维电子气等离激元太赫兹波器件

固态等离激元太赫兹波器件正成为微波毫米波电子器件技术和半导体激光器技术向太赫兹波段发展和融合的重要方向之一。本综述介绍AlGaN/GaN异质结高浓度和高迁移率二维电子气中的等离激元调控、激发及其在太赫兹波探测器、调制器和光源中应用的近期研究进展。通过光栅和太赫兹天线实现自由空间太赫兹波与二维电子气等离激元的耦合,通过太赫兹法布里-珀罗谐振腔进一步调制太赫兹波模式,增强太赫兹波与等离激元的耦合强度。在光栅-谐振腔耦合的二维电子气中验证了场效应栅控的等离激元色散关系,实现了等离激元模式与太赫兹波腔模强耦合产生的等离极化激元模式,演示了太赫兹波的调制和发射。在太赫兹天线耦合二维电子气中实现了等离激元共振与非共振的太赫兹波探测,建立了太赫兹场效应混频探测的物理模型,指导了室温高灵敏度自混频探测器的设计与优化。研究表明,基于非共振等离激元激发可发展形成室温高速高灵敏度的太赫兹探测器及其焦平面阵列技术。然而,固态等离激元的高损耗特性仍是制约基于等离激元共振的高效太赫兹光源和调制器的主要瓶颈。未来的研究重点将围绕高品质因子等离激元谐振腔的构筑,包括固态等离激元物理、等离激元谐振腔边界的调控、新型室温高迁移率二维电子材料的运用和高品质太赫兹谐振腔与等离激元器件的集成等。     

Tunable ultra-wideband terahertz filter based on three-dimensional arrays of H-shaped plasmonic crystals

A face-to-face system of double-layer three-dimensional arrays of H-shaped plasmonic crystals is proposed, and its transmission and filtering properties are investigated in the terahertz regime. Simulation results show that our design has excellent filtering properties. It has an ultra-wide bandgap and passband with steep band-edges, and the transmittance of the passband and the forbidden band are very close to 1 and 0, respectively. As the distance between the two face-to-face plates increases, the resonance frequency exhibits a gradual blueshift from 0.88 THz to 1.30 THz. Therefore, we can dynamically control the bandwidths of bandgap and passband by adding a piezoelectric ceramic plate between the two crystal plates. Furthermore, the dispersion relations of modes and electric field distributions are presented to analyze the generation mechanisms of bandgaps and to explain the location of bandgaps and the frequency shift phenomenon. Due to the fact that our design can provide many resonant modes, the bandwidth of the bandgaps can be greatly broadened. This paper can serve as a valuable reference for the design of terahertz functional devices and three-dimensional terahertz metamaterials.     

Broadly tunable one-way terahertz plasmonic waveguide based on nonreciprocal surface magneto plasmons

One-way-propagating broadly tunable terahertz plasmonic waveguide at a subwavelength scale is proposed based on a metal-dielectric-semiconductor structure. Unlike other one-way plasmonic devices that are based on interference effects of surface plasmons, the proposed one-way device is based on nonreciprocal surface magneto plasmons under an external magnetic field. Theoretical and simulation results demonstrate that the one-way-propagating frequency band can be broadly tuned by the external magnetic fields. The proposed concept can be used to realize various high performance tunable plasmonic devices such as isolators, switches and splitters for ultracompact integrated plasmonic circuits.     

Optical absorption in asymmetric double quantum wells driven by two intense terahertz fields

Optical absorption is investigated for asymmetric double quantum wells driven by a resonant terahertz field and a varied terahertz field both polarized along the growth direction. Rich nonlinear dynamics of the replica peak and the Autler-Townes splitting of various dressed states are systematically studied in undoped asymmetric double quantum wells by taking account of multiple factors, such as the frequency of the varied terahertz field and the strength of the resonant terahertz field. Each electron subband splits into two dressed states when the resonant terahertz field is applied in the absence of the varied terahertz field, the optical absorption spectrum shows the first order Autler-Townes splitting of the electron subbands. When a varied terahertz field is added into the resonant system, the replica peak and the second order Autler-Townes splitting of the dressed states near the band edge respectively emerge when the varied terahertz field is non-resonant and resonant with these dressed states. When the strength of the resonant terahertz field is increased, the first order Autler-Townes double peaks and the replica peak in the optical absorption spectrum shift with the shifts of the dressed states. The presented results have potential applications in electro-optical devices.     

Ultra-compact graphene plasmonic filter integrated in a waveguide

Graphene plasmons have become promising candidates for deep-subwavelength nanoscale optical devices due to their strong field confinement and low damping. Among these nanoscale optical devices, band-pass filter for wavelength selection and noise filtering are key devices in an integrated optical circuit. However, plasmonic filters are still oversized because large resonant cavities are needed to perform frequency selection. Here, an ultra-compact filter integrated in a graphene plasmonic waveguide was designed, where a rectangular resonant cavity is inside a graphene nanoribbon waveguide. The properties of the filter were studied using the finite-difference time-domain method and demonstrated using the analytical model. The results demonstrate the band-pass filter has a high quality factor(20.36) and electrically tunable frequency response. The working frequency of the filter could also be tuned by modifying the cavity size. Our work provides a feasible structure for a graphene plasmonic nano-filter for future use in integrated optical circuits.     

Surface plasmon polariton waveguides with subwavelength confinement

Surface plasmon polaritons(SPPs) are evanescent waves propagating along metal-dielectric interfaces, which provide an effective way to realize optical wave guiding with subwavelength confinement. Metallic nanostructures supporting SPPs,that is, plasmonic waveguides, are considered as required components to construct nanophotonic devices and circuits with a high degree of miniaturization and integration. In this paper, various types of plasmonic waveguides operating in the visible, infrared, and terahertz regions are reviewed, and the status of the research on their fundamentals, fabrications,and applications is provided as well. First, we discuss the mechanisms of SPPs beyond the diffraction limit, and their launching methods. Then, the characteristics of SPPs on various plasmonic waveguides are reviewed, including top-down and bottom-up fabricated types. Considering applications, certain prototypes of plasmonic devices and circuits constructed by plasmonic waveguides for bio/chemo sensing, router, and light modulation are demonstrated. Finally, a summary and future outlook of plasmonic waveguides are given.     

Induced transparency in nanoscale plasmonic resonator systems

An optical effect analogous to electromagnetically induced transparency (EIT) is observed in nanoscale plasmonic resonator systems. The system consists of a slot cavity as well as plasmonic bus and resonant waveguides, where the phase-matching condition of the resonant waveguide is tunable for the generation of an obvious EIT-like coupled resonator-induced transparency effect. A dynamic theory is utilized to exactly analyze the influence of physical parameters on transmission characteristics. The transparency effect induced by coupled resonance may have potential applications for nanoscale optical switching, nanolaser, and slow-light devices in highly integrated optical circuits.     

Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors

An optimized micro-gated terahertz detector with novel triple resonant antenna is presented.The novel resonant antenna operates at room temperature and shows more than a 700% increase in photocurrent response compared to the conventional bowtie antenna.In finite-difference-time-domain simulations,we found the performance of the self-mixing GaN/AlGaN high electron mobility transistor detector is mainly dependent on the parameters L gs(the gap between the gate and the source/drain antenna) and L w(the gap between the source and drain antenna).With the improved triple resonant antenna,an optimized micrometer-sized AlGaN/GaN high electron mobility transistor detector can achieve a high responsivity of 9.45×102 V/W at a frequency of 903 GHz at room temperature.     

Active plasmonics: current status

Techniques for active modulation and control of plasmonic signals in future highly‐integrated nanophotonic devices have advanced rapidly in recent years, with recent innovations extending performance into the terahertz frequency and femtojoule‐per‐bit switching energy domains. As thoughts turn towards the development of practical device structures, key technologies are compared in this review and prospects are assessed for the future development of the field.     

Tailoring terahertz near-field enhancement via two-dimensional plasmons

We suggest a novel possibility for electrically tunable terahertz near-field enhancement in flatland electronic materials supporting two-dimensional plasmons, including recently discovered graphene. We employ electric-field effect modulation of electron density in such materials and induce a periodic plasmonic lattice with a defect cavity. We demonstrate that the plasmons resonantly excited in such a periodic plasmonic lattice by an incident terahertz radiation can strongly pump the cavity plasmon modes leading to a deep subwavelength concentration of terahertz energy, beyond λ/1000, with giant electric-field enhancement factors up to 10(4), which is 2 orders of magnitude higher than achieved previously in metal-based terahertz field concentrators.     

Surface-enhanced Raman spectroscopy of semiconductor nanostructures

We review our recent results concerning surface-enhanced Raman scattering (SERS) by confined optical and surface optical phonons in semiconductor nanostructures including CdS, CuS, GaN, and ZnO nanocrystals, GaN and ZnO nanorods, and AlN nanowires. Enhancement of Raman scattering by confined optical phonons as well as appearance of new Raman modes with the frequencies different from those in ZnO bulk attributed to surface optical modes is observed in a series of nanostructures having different morphology located in the vicinity of metal nanoclusters (Ag, Au, and Pt). Assignment of surface optical modes is based on calculations performed in the frame of the dielectric continuum model. It is established that SERS by phonons has a resonant character. A maximal enhancement by optical phonons as high as 730 is achieved for CdS nanocrystals in double resonant conditions at the coincidence of laser energy with that of electronic transitions in semiconductor nanocrystals and localized surface plasmon resonance in metal nanoclusters. Even a higher enhancement is observed for SERS by surface optical modes in ZnO nanocrystals (above 10⁴). Surface enhanced Raman scattering is used for studying phonon spectrum in nanocrystal ensembles with an ultra-low areal density on metal plasmonic nanostructures.     

Energy Levels of Coupled Plasmonic Cavities

We demonstrate the hybridization of the plasmonic modes in directly coupled whispering gallery cavities fabricated on silver films and present the mode patterns and energy levels using cathodoluminescence spectroscopy.Although the energy of the most antisymmetrically coupled modes is higher than that of the corresponding symmetrically coupled ones,the contrary cases happen for small quantum number modes.We attribute the phenomenon to the different surface plasmon polariton paths between the symmetrically and antisymmetrically coupled modes.These results provide an understanding of the resonant properties in coupled plasmonic cavities,which have potential applications in nanophotonic devices.     

太赫兹频段开口环谐振器的可调谐振模式转换

在硅衬底上设计了一种单开口环谐振器，对其太赫兹频段内的透射性质进行了研究。假定通过光注入方式改变衬底硅的电导率，实现了谐振环的双谐振透射率可调。将砷化镓材料生长于该谐振环的开口处，通过光注入方式改变砷化镓材料的电导率，可以实现谐振环的双频LC共振和偶极子共振模式与单频闭合环共振模式之间的转换。这种通过光注入改变半导体材料电导率的方法，可以在不破坏原来谐振器件物理结构的前提下，实现谐振环谐振模式的可逆转换。     

频率色散表面阻抗对真空电子太赫兹源的影响

为了研究欧姆损耗对高频真空电子器件工作特性的影响,首先推导频率色散表面阻抗边界在三维共形粒子模拟软件UNIPIC-3D中的实现原理,并通过对有耗边界矩形谐振腔和圆波导进行模拟验证了该阻抗边界算法的正确性.采用有耗共形UNIPIC-3D模拟相对论太赫兹表面波振荡器和低电压平板格栅返波振荡器.模拟结果表明,对于表面波振荡器和平板BWO这种电磁场集中在金属慢波结构附近的太赫兹真空电子器件,欧姆损耗会对器件的运行带来极大影响,对于采用铜材料的器件,输出功率会下降一半左右,器件起振时间出现延迟,但器件工作频率几乎不变.为了提高相对论太赫兹表面波振荡器的效率,在二极管和慢波结构之间增加了反射腔,模拟结果表明,在考虑器件表面损耗的条件下,器件的工作频率保持不变,输出功率由41 MW提高到60 MW.     

Selective excitation of multipolar surface plasmon in a graphene-coated dielectric particle by Laguerre Gaussian beam

Localized surface plasmonic resonance has attracted extensive attention since it allows for great enhancement of local field intensity on the nanoparticle surface. In this paper, we make a systematic study on the excitation of localized surface plasmons of a graphene coated dielectric particle. Theoretical results show that both the intensity and frequency of the plasmonic resonant peak can be tuned effectively through modifying the graphene layer. Furthermore, high order localized surface plasmons could be excited and tuned selectively by the Laguerre Gaussian beam, which is induced by the optical angular orbital momentum transfer through the mutual interaction between the particle and the helical wavefront.Moreover, the profiles of the multipolar localized surface plasmons are illustrated in detail. The study provides rich potential applications in the plasmonic devices and the wavefront engineering nano-optics.     

Extraordinary terahertz transmission through subwavelength spindle-like apertures in NbN film

We studied numerically the temperature dependent extraordinary terahertz transmission through niobium nitride(NbN) film perforated with subwavelength spindle-like apertures. Both the resonant frequency and intensity of extraordinary terahertz transmission peaks can be greatly modified by the transition of NbN film from the normal state to the superconducting state. An enhancement of the(±1, 0) NbN/magnesium oxide(MgO) peak intensity as high as 200% is demonstrated due to the combined contribution of both the superconducting transition and the excitation of localized surface plasmons(LSPs) around the apertures. The extraordinary terahertz transmission through spindle-like hole arrays patterned on the NbN film can pave the way for us to explore novel active tuning devices.     

Plasmon-enhanced light emission based on lattice resonances of silver nanocylinder arrays

Diffractive arrays of silver nanocylinders are used to increase the radiative efficiency of InGaN/GaN quantum wells emitting at near-green wavelengths. Large enhancements in luminescence intensity (up to a factor of nearly 5) are measured when the array period exceeds the emission wavelength in the semiconductor material. The experimental results and related numerical simulations indicate that the underlying mechanism is a strong resonant coupling between the light-emitting excitons in the quantum wells and the plasmonic lattice resonances of the arrays. These excitations are particularly well suited to light-emission-efficiency enhancement, compared to localized surface plasmon resonances at similar wavelengths, due to their larger scattering efficiency and larger spatial extension across the sample area.     

Interaction of terahertz radiation with surface and interface plasmon–phonons in AlGaAs/GaAs and GaN/Al2O3 heterostructures

Surface phonon and plasmon–phonon polariton characteristics of GaAs, Al _x Ga_1?x As/GaAs, and GaN/Al₂O₃ layered structures are investigated by means of terahertz radiation reflection spectroscopy. The strong resonant absorption peaks and selective emission of the THz radiation dependent upon the lattice composition and free electron density in these layered structures are experimentally observed and analyzed.     

Fabrication of multilayer metamaterials by femtosecond laser‐induced forward‐transfer technique

A novel method based on femtosecond laser‐induced forward transfer for high‐throughput and efficient fabrication of periodic multilayer plasmonic metamaterials is demonstrated. With precisely controlling laser raster path applied on sputtered multilayer thin films, the laser‐ablated materials can be transferred to another substrate leaving the fabricated multilayer structure on the original substrate. Subsequently, three‐dimensional metamaterials can be made by multilayer structuring. Moreover, all the experimental results show that to create such multilayer split resonant rings (SRRs) with uniform profile, the laser fluence should be fine controlled under proper conditions. The optical property of fabricated multilayer SRR array is investigated by optical measurements and finite‐difference time‐domain simulations, showing various resonant modes in the middle‐IR region. The calculated induced current distributions exhibit rich resonance properties of the structures as well. This work markedly extends the laser direct writing technique to a wide application in fabricating complicated metamaterials and plasmonic devices efficiently.