等离激元增强的石墨烯光吸收

石墨烯中等离激元具有特殊的光电性质,其和入射光的强烈耦合可以引起光吸收的增强.本文基于时域有限差分法和多体自洽场理论研究了等离激元对处于光学谐振腔中的石墨烯光吸收的影响.由于石墨烯中等离激元与入射光动量和能量不匹配而不能直接相互作用,因此石墨烯上施加了金属光栅结构.研究发现光栅结构能够对入射光进行动量补偿并且能够引起其下石墨烯中的电场强度产生很大程度增强,从而导致在该石墨烯结构中太赫兹等离激元和入射光发生强烈耦合而产生太赫兹等离极化激元,同时引起石墨烯光吸收的增强.希望本文能够加深对石墨烯光电特性的理解以及可以为基于石墨烯的太赫兹光电装置提供一定的理论依据.     

滤波器增强的高灵敏度室温HEMT太赫兹探测器

制备了一种集成有太赫兹低通滤波器的高速、高灵敏度GaN/AlGaN高电子迁移率晶体管(HEMT)太赫兹探测器。实验研究表明,当在太赫兹天线与引线电极之间加入低通滤波器时,太赫兹耦合天线的谐振性能恢复,室温下器件的响应度达到了1.05×10~3 V/W;测试带宽为1Hz时,器件的噪声等效功率达到了4.7×10~(-11) W。利用该探测器单元对不同材料进行了快速扫描成像,结果表明,该探测器单元具有较好的成像分辨率,且器件的响应速度优于商用的气动探测器的和热释电探测器的。     

基于石墨烯的太赫兹器件研究进展

石墨烯是一种零带隙二维的半导体材料, 具有极高的载流子迁移率, 优异的机械、电学、热学和光学等性能. 在太赫兹辐射源、调制器和探测器件的研究中, 石墨烯材料具有独特的优势. 本文以石墨烯材料在太赫兹辐射源、调制器以及探测器等器件方面的应用为主, 综述了石墨烯太赫兹器件的最新研究进展.     

太赫兹表面极化激元

作为束缚于表面或界面的电磁波与极性元激发的耦合模量子,表面极化激元是克服衍射极限的核心物理.在紫外、可见以及近红外波段,表面等离子极化激元展现出了亚波长特性,具有高分辨成像等应用,并发展成为"表面等离子极化激元亚波长光学"学科;在中红外波段,表面声子极化激元发挥着同样的作用.太赫兹波段曾是人类认识的空白区域,近三十年来得以高速发展,其战略意义重大.具有克服衍射极限能力的太赫兹表面极化激元同样是小型化与集成化太赫兹器件,以及太赫兹超高分辨成像的重要物理基础.近几年来,对以石墨烯为代表的二维材料的研究突飞猛进,诞生了"石墨烯表面等离子极化激元亚波长光学"这门学科,并贡献于太赫兹领域.本文对可在太赫兹波段工作的人工超构材料、掺杂半导体、二维电子气、二维材料、拓扑绝缘体等结构材料的表面极化激元进行了较为全面的总结与介绍,为研制克服衍射极限的太赫兹集成光子学器件提供可资借鉴的物理基础.     

基于表面等离激元的长波QWIP光栅优化

为了提高长波量子阱红外探测器的灵敏度及探测率,采用表面等离激元效应来提高量子阱红外探测器中二维光栅的耦合效率。利用三维时域有限差分算法,分析表面等离激元作用下,长波量子阱红外探测器中二维金属薄膜光栅参数对入射光的调制作用。计算结果表明,对于8 m的入射光,当光栅周期P=2.8 m,孔直径D=1.4 m,光栅层厚度L=0.04 m时,X Y平面内Z方向电场值最大,光栅的耦合效率最高。     

黑砷磷室温太赫兹探测器

由于太赫兹波与众多物质之间存在着丰富的相互作用,太赫兹技术在众多领域均有应用需求。因此,基于独特物理机制和优异材料特性的高灵敏度、便携式太赫兹探测器的研制刻不容缓。黑砷磷是一种新型二维材料,其带隙和输运特性随化学组分可调,在光电探测领域被广泛关注。目前基于黑砷磷的研究集中在红外探测方面,而对于太赫兹探测的应用未见报道。本文介绍了一种基于黑砷磷的天线耦合太赫兹探测器。实验结果表明,在探测过程中存在两种不同的探测机制,并且两者之间存在竞争关系。通过改变黑砷磷的化学组分可以定制不同的探测机制,使其达到最优响应性能。在平衡材料带隙和载流子迁移率的情况下,探测器实现了室温下对0.37 THz电磁波的灵敏探测,其电压响应度和噪声等效功率分别为28.23 V/W和0.53 nW/Hz1/2。     

太赫兹表面等离激元共振传感器

对通过棱镜耦合的太赫兹表面等离激元共振传感器的工作特性进行了理论分析.此类器件在可见光波段工作时,在由样品折射率、金属膜层性质和厚度决定的共振角度下会出现一个反射极小峰;但工作在太赫兹频率时,表面等离激元共振现象表现为一个反射增强的尖峰,而且这一共振角度与棱镜和样品的折射率之间存在一个简单的对应关系,并不依赖于棱镜所镀...     

平面天线在场效应晶体管太赫兹探测器中的应用

为了提高场效应晶体管太赫兹探测器的响应度并降低噪声等效功率,需要对探测器集成平面天线的结构进行合理设计与优化,本文对集成平面天线结构的场效应晶体管太赫兹探测器的研究进行了深入调研。首先,对场效应晶体管太赫兹探测器的工作原理进行了分析,介绍了集成平面天线如何解决耦合太赫兹波效率低的问题。然后,介绍了一些常用的平面天线结构,包括偶极子天线、贴片天线、缝隙天线、grating-gate和其他类型的结构,比较了各种天线的性能以及引入后对太赫兹探测器响应度的影响。通过对比不同天线结构的探测器响应度和噪声等效功率等参数指标,发现:采用平面天线结构之后,场效应晶体管太赫兹探测器的响应度有了大幅度的提升,各种类型的天线对探测器响应度都有不同程度的提升。本文着重介绍了几种集成于场效应晶体管的平面天线结构,包括各种天线的性能和研究进展,最后分析了场效应晶体管太赫兹探测器存在的问题和发展趋势。     

THzQWP二维光栅耦合效率的理论分析研究

将二维金属光栅结构引入到探测器结构中,以提高太赫兹(THz)量子阱光电探测器的探测率。采用三维时域有限差分算法,建立了THz量子阱光电探测器的二维金属光栅仿真模型,详细分析了二维金属光栅参数对太赫兹量子阱光电探测器的电场强度的影响。仿真分析结果表明:当入射光频率为6.27 THz(相对应波长为47.847 m)、光栅周期P=10.5 m、占空比=0.55（金属块宽度w= 5.755 m）、光栅层厚度h=0.4 m时,器件中的Z方向上的电场值最大,光栅的耦合效率最高。     

太赫兹量子阱光电探测器光栅耦合的模拟与优化

光栅耦合是量子阱光电探测器探测正入射电磁辐射的常用耦合方法,本文采用模式展开法研究了一维金属光栅太赫兹量子阱光电探测器中的电磁场分布,并给出了器件有源区中的平均光强.研究结果表明,若一维光栅的周期与太赫兹波在器件材料中的波长相当,并且根据器件结构选取合理的光栅占空比,可使器件中的平均光场最强,光栅的光耦合效率最高,从而提高器件的响应率. 关键词： 太赫兹 量子阱光电探测器 光栅     

Plasmon-induced terahertz absorption and photoconductivity in a grid-gated double-quantum-well structure

The terahertz absorption spectra of plasmon modes in a grid-gated double-quantum-well field-effect transistor structure is analyzed theoretically and numerically using the scattering matrix approach and is shown to faithfully reproduce strong resonant features of recent experimental observations of terahertz photo-conductivity in such a structure.     

金属-介质-金属渔网超表面结构调控的荧光辐射：空间选择性激发和双增强

增强荧光辐射在生物成像、高灵敏探测、集成光源等方面都具有重要的应用价值.金属纳米颗粒的周围或者金属纳米结构的间隙都可以产生强的电磁场,相应的,这些结构附近的局域态密度也被极大地增强.虽然增强荧光辐射已经在多种金属纳米颗粒和颗粒对中被证明,但是利用金属纳米结构对荧光分子的吸收和辐射过程同时进行调制仍然是一个有挑战的问题.本文研究了金属-介质-金属超表面对荧光辐射的调控,其中局域表面等离激元(LSP)和磁等离激元(MPP)分別与于分子的吸收和辐射过程发中耦合相互作用.对于吸收过程,LSP的耦合作用使得可以通过旋转泵浦激光的偏振态来实现荧光分子的空间选择激发.此外,MPP模式的偏振依赖特性使得矩形渔网结构中的荧光分子的辐射波长和偏振态也受到调控.实验观测结果经过了时域有限差分模拟的验证.本文报道的纳米结构在光辐射器件和纳米尺度集成光源等方面都具有潜在的应用价值.     

Analysis of the modal energy distribution of an excited vibrating panel coupled with a heavy fluid cavity by a dual modal formulation

This paper describes the modal interaction between a panel and a heavy fluid cavity when the panel is excited by a broad band force in a given frequency band. The dual modal formulation (DMF) allows describing the fluid–structure coupling using the modes of each uncoupled subsystem. After having studied the convergence of the modal series on a test case, we estimate the modal energies and the total energy of each subsystem. An analysis of modal energy distribution is performed. It allows us to study the validity of SEA assumptions for this case. Added mass and added stiffness effects of the fluid are observed. These effects are related to the non-resonant acoustic modes below and above the frequency band of excitation. Moreover, the role of the spatial coupling of the resonant cavity modes with the non-resonant structure modes is also highlighted. As a result, the energy transmitted between the structure and the heavy fluid cavity generally cannot be deduced from the SEA relation established for a light fluid cavity.     

Polariton trap in microcavities with metallic mirrors

In planar microcavities with metallic mirrors the spectra of cavity polaritons may be strongly modified by the presence of a surface plasmon interacting with transverse-magnetic (TM)-polarized cavity modes. In particular, for certain parameters of the cavity, a minimum in the dispersion of the TM-polarized polariton may develop, which is located in the non-radiative part of the spectrum. This minimum may serve as a very effective trap for polariton population at high non-resonant excitation of the cavity.     

Thermally stimulated terahertz radiation of plasmon–phonon polaritons in GaAs

The thermally stimulated excitation of radiative modes of surface plasmon–phonon polaritons in GaAs followed by the high-power terahertz (THz) radiation selective emission is studied and experimentally observed. The selective high-power THz radiation emitters in the 7–8 and 10–15 THz frequency ranges based on the heated highly doped (n>5?10¹⁷ cm^?3) GaAs plates are proposed.     

Strong Purcell effect for InAs quantum boxes in high-Q wet-etched microdisks

We report on the fabrication of high-quality GaAs microdisks using a new two-step wet-etching fabrication process, and on their optical characterization, using the photoluminescence of InAs Quantum Boxes as an intracavity light source. We measure quality factors as high as 12 000 for the resonant whispering gallery modes, which highlights an excellent smoothness of the cavity sidewalls. Those small-volume/high-Q-confined modes are extremely attractive for performing CQED experiments on solid-state emitters. Using a novel experimental approach, we could in particular observe a record enhancement of the SE rate for emitters on-resonance with such modes (×18), in a cw PL experiment.     

Magnetotransport characterization of THz detectors based on plasma oscillations in submicron field-effect transistors

Magnetotransport characterization of field-effect transistors in view of their application as resonant detectors of THz radiation is presented. Three groups of different transistors based on GaAs/GaAlAs or GaInAs/AlGaAs heterostructures are investigated at liquid-helium temperatures and for magnetic fields of up to 14 T. The magnetic-field dependence of the transistor resistance is used for evaluation of the electron density and mobility in the transistor channel. The electron mobility and concentration determined from magnetotransport measurements are used for the interpretation of recently observed resonant detection of terahertz radiation in 0.15 μm gate length GaAs transistors and for the determination of the parameters of other field-effect transistors processed for resonant and voltage tunable detection of THz radiation. From Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 138–145. Original English Text Copyright ? 2004 by Lusakowski, Knap, Dyakonova, Kaminska, Piotrowska, Golaszewska, Shur, Smirnov, Gavrilenko, Antonov, Morozov. This article was submitted by the authors in English.     

Kinetics of Low-Temperature Microphotoluminescence of Exciton-Impurity Complexes in CdZnTe Single Crystals

Low-temperature (6.5 K) microphotoluminescence near the intrinsic absorption edge of CdZnTe alloy single crystals is studied under conditions of non-resonant and resonant excitation by picosecond pulses. Characteristic relaxation times for free excitons and exciton-impurity complexes of various types are determined. A significant (by a factor of 4–8) decrease in the photoluminescence signal decay time of exciton-impurity complexes on neutral donors during the transition to the resonant excitation mode is detected. The detected sharp decrease in the photoluminescence signal decay time can indicate the manifestation of collective effects in this system of emitters.     

Resonance and composition effects on the Raman scattering from silver-gold alloy clusters

Low-frequency Raman scattering experiments have been performed on thin films consisting of pure gold or gold-silver alloy clusters embedded in alumina matrix. It is clearly shown that the quadrupolar vibrational modes are observed by Raman scattering because of the effect of resonance with the excitation of the electronic surface dipolar plasmon. This is due to the strong coupling between the collective electronic dipolar excitation and the quadrupolar vibrational modes. This effect of resonance does not exist with the core electron excitations. The mixing of the conduction electron dipolar excitation (surface plasmon) with the core electrons leads to the quenching of the resonant Raman scattering. Received 16 November 2000