生物分子膜门电极AlGaN/GaN高电子迁移率晶体管(HEMT)生物传感器研究

设计并制作了结构尺寸为毫米量级的AlGaN/GaN高电子迁移率晶体管(HEMT)生物传感器,采用数值分析的方法分析了器件传感区域长度与宽度比值及待测物调控二维电子气(2DEG)距离与感测信号之间的关系,给出了结构尺寸为毫米量级的AlGaN/GaN HEMT生物传感器的设计依据,以不同浓度的前列腺特异性抗原(PSA)为待测物,对制作的AlGaN/GaN HEMT生物传感器进行了初步测量,测试结果表明,在50 mV的电压下,毫米量级的AlGaN/GaN HEMT生物传感器的对PSA的探测极限低于0.1 pg/ml.实验表明毫米量级的AlGaN/GaN HEMT生物传感器具有灵敏度高,易于集成等优点,具备良好的应用前景.     

大粘度复合纳米材料面投影微立体光刻系统的分辨率研究

 基于数字微反射镜的动态掩膜面投影微立体光刻技术是一种基于快速原型制造思想的新型微细结构加工手段,其系统中常用树脂槽和涂覆装置使得其无法适用于粘度大的固化材料。为实现粘度大的复合纳米材料的固化制造,构建了新型的基于数字微反射镜技术的动态掩膜微立体光刻系统,该系统的加工横向分辨率由系统的光学分辨率与树脂特性共同决定。当单层树脂固化厚度超过临界值时,系统的横向分辨率将降低。根据实验中测量光学系统的分辨率以及树脂的工作曲线,得到本系统的最高横向分辨率可以达到14 μm。     

Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors

An optimized micro-gated terahertz detector with novel triple resonant antenna is presented.The novel resonant antenna operates at room temperature and shows more than a 700% increase in photocurrent response compared to the conventional bowtie antenna.In finite-difference-time-domain simulations,we found the performance of the self-mixing GaN/AlGaN high electron mobility transistor detector is mainly dependent on the parameters L gs(the gap between the gate and the source/drain antenna) and L w(the gap between the source and drain antenna).With the improved triple resonant antenna,an optimized micrometer-sized AlGaN/GaN high electron mobility transistor detector can achieve a high responsivity of 9.45×102 V/W at a frequency of 903 GHz at room temperature.     

低驱动、高调制X-Cut铌酸锂电光调制器的优化设计

利用定向耦合器代替Y形分支结构,在X-cut铌酸锂(LN)基底上设计了一款具有低驱动电压、高调制参数的马赫-曾德尔(M-Z)型电光调制器。采用有限元法对定向耦合器的原理及影响因素进行了详细分析和精确计算,并对电光调制器的关键结构参数进行了优化。结果表明:光波沿着定向耦合器传播时,能量在两波导中来回交替,呈正弦和余弦函数分布,并且耦合长度随着其间距的增大而快速增大。在调制臂长为3cm,光波长为1550nm的情况下,单臂调制所获得的半波电压Vπ为2.22V,调制参数S21为-51.13dB。通过对调制臂进行截面分析,给出了电场Ex分量、电位移矢量Dx分量和光模分布,并求得重叠积分因子为0.486。同时还表明脊形波导结构有利于提高电光作用效率。当脊高为1μm时,重叠积分因子为0.714,相较于平板波导,其电光重叠积分因子提高了46.91%。     

Polarization-Independent Guided-Mode Resonance Filters under Oblique Incidence

We present the dispersion relation of guided-mode resonances in planar periodic waveguides, both for s-polarized （TF, mode） and p-polarized （TM mode） incident waves. For a fixed homogeneous planar waveguide, dispersion curves of the TE eigenmode cannot cross that of the TM eigenmode at all. That is to say, at a certain wavelength, TE and TM modes cannot be excited with the same propagation constant. Due to Bragg reflection in the planar periodic waveguide, dispersion curves of the TE leaky mode may intersect with that of the TM leaky mode in the first Brillouin zone. We employ these intersections to achieve polarization-independent guided-mode resonance filters.