Effect of pyrene and acetophenone on photostability of poly(methylphenylsilane) films

We have used investigations of low-temperature photoluminescence and thermally stimulated luminescence to study the effect of acetophenone and pyrene dopants on the photochemical stability of poly(methylphenylsilane) (PMPS) films. We have established that pure PMPS films and acetophenone-doped PMPS films degrade on exposure to UV radiation due to breaking of Si-Si bonds followed by formation of crosslinks between the macromolecules. At the same time, pyrene inhibits degradation of PMPS to a significant extent. This proves that photoinduced breaking of the Si-Si bond can occur upon excitation of the macromolecule to the first triplet T₁(σσ*) state, since acetophenone sensitizes while pyrene quenches the intrinsic phosphorescence of PMPS. So the photochemical stability of PMPS can be improved by introducing a dopant which quenches triplet excitations of the macromolecule. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 3, pp. 315–320, May–June, 2007.     

Direct evidence for homonuclear bonds in amorphous SiC

The Raman Spectra of carbon-deficient sputtered amorphous SiC films contain an intense band centered at 1442 cm^?1. This band is attributed to the presence of C-C bonds. Similarly a peak at ～508 cm^?1 is attributed to Si-Si bonds. The depolarization spectrum was found to be constant at $\text{?(Δ}\text{v}\text{?}\text{) = 0.32 ± 0.03}$ for $\text{0 < Δ}\text{v}\text{?}\text{< 1800}\text{cm}{}^{\mathrm{?1}}$. Our results indicate a degree of compositional disorder which prevents an identification of the observed like-atom bonds with those predicted by a modified Polk model.     

Effects of the edge shape and the width on the structural and electronic properties of silicene nanoribbons

Under the generalized gradient approximation (GGA), the structural and electronic properties are studied for H-terminated silicene nanoribbons (SiNRs) with either zigzag edge (ZSiNRs) or armchair edge (ASiNRs) by using the first-principles projector-augmented wave potential within the density function theory (DFT) framework. The results show that the length of the Si-H bond is always 1.50 Å, but the edge Si-Si bonds are shorter than the inner ones with identical orientation, implying a contraction relaxation of edge Si atoms. An edge state appears at the Fermi level E_F in broader ZSiNRs, but does not appear in all ASiNRs due to their dimer Si-Si bond at edge. With increasing width of ASiNRs, the direct band gaps exhibit not only an oscillation behavior, but also a periodic feature of Δ_3n > Δ_3n+1 > Δ_3n+2 for a certain integer n. The charge density contours analysis shows that the Si-H bond is an ionic bond due to a relative larger electronegativity of H atom. However, all kinds of the Si-Si bonds display a typical covalent bonding feature, although their strength depends on not only the bond orientation but also the bond position. That is, the larger deviation of the Si-Si bond orientation from the nanoribbon axis as well as the closer of the Si-Si bond to the nanoribbon edge, the stronger strength of the Si-Si bond. Besides the contraction of the nanoribbon is mainly in its width direction especially near edge, the addition contribution from the terminated H atoms may be the other reason.     

Study of the atomic and electronic structures of amorphous silicon nitride and defects in it

The structure of amorphous silicon nitride obtained by cooling from a melt has been simulated by Car-Parinello molecular dynamics. Several types of Si-Si defect coordination have been revealed. It has been found that, in addition to normal Si-Si bonds, numerous double Si-Si bonds (Si-Si-Si defects) are present in the amorphous structure.     

Optical characteristics of porous silicon structures

Morphology, composition, and optical properties of porous silicon on single-crystal-silicon substrates and p-n junctions are studied. Substrate orientation, type of conduction, and composition of etching agent are varied to obtain nano-, meso-, and microporous silicon and multilayer porous structures. A correlation of the photoluminescence intensity and intensity of the IR absorption band peaking at 616 cm^?1 is related to the presence of Si-Si bonds.     

Iron nanoparticles in amorphous SiO<Subscript>2</Subscript>: X-ray emission and absorption spectra

The local structure of the chemical bond of iron ions implanted into SiO₂ glasses (implantation energy, 100 keV; fluence, 1 × 10¹⁶ cm^?2) is investigated using x-ray emission and absorption spectroscopy. The Fe L x-ray emission and absorption spectra are analyzed by comparing them with the corresponding spectra of reference samples. It is established that iron nanoparticles implanted into the SiO₂ vitreous matrix are in an oxidized state. The assumption is made that the most probable mechanism of transformation of iron nanoparticles into an oxidized state during implantation involves the breaking of Si-O-Si bonds with the formation of Si-Si and Fe-O bonds.     

Density functional calculations of dangling bonds for CN and SiN films

Hyperfine interaction constants (HFICs) of dangling bonds for CN and SiN films were calculated by density-functional theory. The averaged ¹⁴N isotropic HFICs for C dangling bonds are almost equal to those for Si dangling bonds. The anisotropic ¹⁴N HFICs calculated for C dangling bonds are larger than those for Si dangling bonds by a factor 2. The calculated results were compared with experimental results obtained by electron spin resonance and electron nuclear double resonance. It was indicated that the carbon dangling bonds are located such that they avoid N atoms in CN films.     

Influence of oxygen concentration on optical properties of semi-insulating polycrystalline silicon films

Optical properties of semi-insulating polycrystalline silicon (SIPOS) films were investigated over the wide region of wavelengths. The vibrational modes of Si-O-Si and Si-Si bonds were studied by IR and Raman spectroscopy. A pronounced effect of oxygen content on the measured spectra was observed. Optical constants of SIPOS films have been compared with those of amorphous silicon and glassy silicon dioxide and their values have been successfully interpreted in terms of the theory of effective medium. The results have shown that the amorphous character prevails in the as-deposited SIPOS films.     

Embedded structure of silicon monoxide in SiO2 films

The structure of SiO_x (x = 1.94) films has been investigated using both X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS). The SiO_x films were deposited by vacuum evaporation. XPS spectra show that SiO_1.94 films are composed of silicon suboxides and the SiO₂ matrix. Silicon clusters appeared only negligibly in the films in the XPS spectra. Si₃O⁺ ion species were found in the TOF-SIMS spectra with strong intensity. These results reveal the structure of the films to be silicon monoxide embedded in SiO₂, and this structure most likely exists as a predominant form of Si₃O₄. The existence of Si-Si structures in the SiO₂ matrix will give rise to dense parts in loose glass networks.     

Environment of the P b center at the Si(111)/oxide interface

We assess several models for the environment of the P _b center (Si dangling bond center) at the interface of Si(111) with its oxide. The comparison of hyperfine constants observed with those predicted using large cluster models favors a local structure in which there is an Si-Si bond within the oxide close to the Si dangling bond. Such Si-Si bonds are also suggested by a number of other experiments and are consistent with the reactive layer model proposed to rationalize a range of oxidation studies.     

Properties of diamondlike films obtained in a barrier discharge at atmospheric pressure

Diamondlike films are synthesized from gaseous hydrocarbons in a barrier discharge at atmospheric pressure. The films were investigated using transmission electron microscopy, electron diffraction, and infrared spectroscopy. A technique for determining the quantitative characteristics of the films (hydrogen content, ratio of different types of carbon-carbon bonds and hydrocarbon groups) using standard samples is described. The highest-quality films were obtained from methane (ratio of hydrogen to carbon atoms H/C=1.04, fraction of diamondlike to graphitelike bonds sp ³: sp ²=100%: 0%) and from a mixture of acetylene and hydrogen in the ratio 1:19 (H/C=0.73, sp ³: sp ²=68%: 32%). Zh. Tekh. Fiz. 67, 100–104 (August 1997)     

Preparation of super-hard coatings by pulsed laser deposition

Amorphous diamond-like carbon (DLC) films and nanocrystalline cubic boron nitride (c-BN) films were prepared by pulsed laser deposition. DLC films with 80 to 85% sp³ bonds prepared at a laser fluence above 6 J/cm² and a substrate temperature below 100 °C show high compressive stresses in the range of 8 to 10 GPa. Those stresses can be completely removed by means of pulsed laser annealing, allowing the preparation of DLC films with several-micrometre thickness. c-BN films were prepared with additional ion-beam bombardment at a substrate temperature of 250 °C. The properties of DLC and c-BN films deposited at high growth rates up to 100 nm/min are presented . PACS 81.15.Fg; 68.60.Bs: 62.40.+i     

Synthesis of carbon nitride films by direct current plasma assisted pulsed laser deposition

Carbon nitride films were deposited by pulsed laser ablation of a graphite target under a nitrogen atmosphere at room temperature. A direct current discharge apparatus was used to supply active nitrogen species during the deposition of carbon nitride films. The composition and bonding structure of carbon nitride films were determined by Fourier-transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy. The incorporation of nitrogen atoms in the films is greatly improved by the using of a dc glow discharge. The ratio N/C can reach 0.34 at the discharge voltage of 400 V. Six peaks centered at 1025 cm^-1, 1226 cm^-1, 1381 cm^-1, 1534 cm^-1, 1629 cm^-1, and 2200 cm^-1 can be clearly distinguished from the FTIR spectra of the deposited films, which indicates the existence of C–N, C=N, and C≡N bonds. The fraction of sp² C, C≡N bonds, and C=N bonds in the deposited films increases with increasing discharge voltage. Deconvolution results of C 1s and N 1s spectra also indicate that nitrogen atoms in the films are chemically bonded to sp¹ C, sp² C, and sp³ C atoms. Most of the nitrogen atoms are bonded to sp² C atoms. Increasing the discharge voltage leads to a decrease of the fraction of nitrogen atoms bonded to sp² C and the fraction of amorphous carbon; however, it leads to an increase of the fraction of nitrogen atoms bonded to sp³ C and the fraction of sp² C and sp³ C atoms bonded to nitrogen atoms. Received: 7 June 2000 / Accepted: 19 February 2001 / Published online: 27 June 2001     

Simultaneous interaction of methyl radicals and atomic hydrogen with amorphous hydrogenated carbon films, as investigated with optical in situ diagnostics

Methyl radicals (CH₃) and atomic hydrogen (H) are dominant radicals in low-temperature plasmas from methane. The surface reactions of these radicals are believed to be key steps leading to deposition of amorphous hydrogenated carbon (a-C:H) films or polycrystalline diamond in these discharges. The underlying growth mechanism is studied, by exposing an a-C:H film to quantified radical beams of H and CH₃. The deposition or etching rate is monitored via ellipsometry and the variation of the stoichiometry is monitored via isotope labeling and infrared spectroscopy. It was shown recently that, at 320 K, methyl radicals have a sticking coefficient of 10^-4 on a-C:H films, which rises to 10^-2 if an additional flux of atomic hydrogen is present. This represents a synergistic growth mechanism between H and CH₃. From the interpretation of the infrared data, a reaction scheme for this type of film growth is developed: atomic hydrogen creates dangling bonds by abstraction of bonded hydrogen within a surface layer corresponding to the range of H in a-C:H films. These dangling bonds serve at the physical surface as adsorption sites for incoming methyl radicals and beneath the surface as radicalic centers for polymerization reactions leading to carbon–carbon bonds and to the formation of a dense a-C:H film. Received: 18 July 2000 / Accepted: 12 December 2000 / Published online: 3 April 2001     

高温退火对非晶CNx薄膜场发射特性的影响

采用射频磁控溅射方法在纯N₂气氛中沉积了非晶CN_x薄膜样品，并 在真空中退火至900 ℃.对高温退火引起的CN_x薄膜化学成分、键合结构及其场发射特性方面的变 化进行研究.用傅里叶变换红外光谱和x射线光电子能谱分析样品的内部成分及键合结构的变化，其中sp²键及薄膜中N的含量与薄膜的场发射特性密切相关.退火实验的结果表明 高温退火可以导致CN_x薄膜中N含量大量损失，并在薄膜中形成大量sp^{2< 关键词： x薄膜')" href="#">CN_x薄膜 化学键合 退火温度 场致电子发射}     

Study of optical properties and biocompatibility of DLC films characterized by sp3 bonds

Optical and biomedical properties of diamond-like carbon (DLC) films of various sp², sp³ bonds were studied. The layers were prepared by pulsed laser deposition (PLD) for laser energy densities from 4 J?cm^?2 to 14 J?cm^?2. The percentage of sp² and sp³ bonds was calculated using X-ray photoelectron spectroscopy (XPS). In dependence on density the films contained up to 70 % of sp³ bonds. Optical properties were measured using spectroscopic ellipsometry in region from 250 nm to 1000 nm (n=2.6–2.7; k=0.07–0.25) and by transmission measurement (from 200 nm to 1100 nm). The adhesion and growth of human fibroblasts and keratinocytes of DLC films were tested in vitro.     

辉光放电等离子体辅助XeCl准分子激光溅射沉积碳氮薄膜

利用直流辉光放电等离子体辅助的脉冲激光沉积技术在Si衬底上生长了碳氮薄膜.通过扫描电子显微镜、X射线衍射、X射线光电子能谱、俄歇电子能谱等多种手段,对薄膜的形貌、成分、晶体结构、价键状态等特性进行了分析和确定.结果表明,沉积薄膜为含有非晶SiN和晶态氮化碳颗粒结构,晶态成分呈多晶态,主要为α-C₃N₄相、β-C₃N₄相,晶粒大小为40—60nm.碳氮之间主要以C-N非极性共价键形式相结合. 关键词： 脉冲激光沉积 直流辉光放电 碳氮薄膜     

Dependence of the sp3 bond fraction on the laser wavelength in thin carbon films prepared by pulsed laser deposition

3 bonds in the carbon films prepared by pulsed laser deposition of carbon obtained from graphite was investigated by electron energy loss spectroscopy (EELS) and X-ray photoelectron spectroscopy (XPS). The fraction of sp³ bonds increased with a decreasing laser wavelength. Energetic C⁺ ion species were effectively produced by using a short-wavelength laser. The sp³ bond fraction increased with an increasing amount of energetic C⁺ ion species. The fractions of sp³ bonds in the carbon film were 80%, 42%, 26% and 15% at wavelengths of 193, 248, 532 and 1064 nm, respectively. Received: 28 October 1997/Accepted:29 October 1997     

Effect of 50 MeV Li+3 and 80 MeV C+5 ions’ beam irradiation on the optical,structural, chemical and surface topographic properties of PMMA films*

The self-standing films of polymethyl methacrylate (PMMA) were irradiated under vacuum with 50?MeV lithium (Li³⁺) and 80?MeV carbon (C⁵⁺) ions to the fluences of 3?×?10¹⁴, 1?×?10¹⁵, 1?×?10¹⁶ and 1?×?10¹⁷ ions µm^?2. The pristine and irradiated samples of PMMA films were studied by using ultraviolet–visible (UV–Vis) spectrophotometry, Fourier transform infrared, X-ray diffractrometer and atomic force microscopy. With increasing ion fluence of swift heavy ion (SHI), PMMA suffers degradation, UV–Vis spectra show a shift in the absorption band from the UV towards visible, attributing the formation of the modified system of bonds. E_g and E_a decrease with increasing ion fluence. The size of crystallite and crystallinity percentage decreases with increasing ion fluence. With SHI irradiation, the intensity of IR bands and characteristic bands of different functional groups are found to shift drastically. The change in (E_g) and (N) in carbon cluster is calculated. Shifting of the absorption band from the UV towards visible along with optical activity and as a result of irradiation, some defects are created in the polymer causing the formation of conjugated bonds and carbon clusters in the polymer, which in turn lead to the modification in optical properties that could be useful in the fabrication of optoelectronic devices, gas sensing, electromagnetic shielding and drug delivery.     

Dynamics of hydrogen in hydrogenated amorphous silicon

The problem of hydrogen diffusion in hydrogenated amorphous silicon (a-Si:H) is studied semiclassically. It is found that the local hydrogen concentration fluctuations-induced extra potential wells, if intense enough, lead to the localized electronic states in a-Si:H. These localized states are metastable. The trapping of electrons and holes in these states leads to the electrical degradation of the material. These states also act as recombination centers for photo-generated carriers (electrons and holes) which in turn may excite a hydrogen atom from a nearby Si-H bond and breaks the weak (strained) Si-Si bond thereby apparently enhancing the hydrogen diffusion and increasing the light-induced dangling bonds.