Influence of radiofrequency power on compositional, structural and optical properties of amorphous silicon carbonitride films

The silicon carbonitride (SiCN) films were deposited on n-type Si (1 0 0) and glass substrates by the radiofrequency (RF) reactive magnetron sputtering of polycrystalline silicon target under mixed reactive gases of acetylene and nitrogen. The films have been characterized by energy dispersive spectrometer (EDS), atomic force microscope (AFM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and ultraviolet-visible spectrophotometer (UVS). The influence of RF power on the compositional, morphological, structural and optical properties of the SiCN films was investigated. The SiCN films deposited at room temperature are amorphous, and the C, Si and O compositions except N in the films are sensitive to the RF power. The surface roughness and optical band gap decrease as the RF power increases. The main bonds in the SiCN films are C-N, N-H_n, C-H_n, C-C, CN, Si-H and Si-C, and the intensities of the CN, Si-H and C-H_n bonds increase with increment of the RF power. The mechanisms of the influence of RF power on the characteristics of the films are discussed in detail.     

Doping and STM tip-induced changes to single dangling bonds on Si(0 0 1)

We have studied single Si dangling bonds on the Si(0 0 1) surface using scanning tunnelling microscopy (STM) and density functional theory (DFT) calculations. The Si dangling bonds are created by the chemisorption of single hydrogen atoms forming a Si-Si-H hemihydride. At room temperature, the hemihydride induces static buckling on adjacent Si-Si dimers. In the STM measurements, we observe that the orientation of the static buckling pattern can be reversed with tip-sample bias and influenced by the substrate doping. Our DFT calculations yield a correlation between the electron occupancy of the hemihydride Si dangling bond and the buckling orientation around it.     

The structural and electronic properties of silicon nanoribbons on Ag(110): A first principles study

We have investigated the structures of silicon nanoribbons on Ag(110) using first principles calculations. The armchair silicon nanoribbons (ASiNRs) and zigzag silicon nanoribbons (ZSiNRs) with different widths are analyzed. The formation energy study shows that the ASiNRs with the width of 16 Å are the most stable structures. These ASiNRs have the structural parameters same as experimental ones. The simulated scanning tunneling microscope (STM) images of these ASiNRs also agree well with the experimental results. Thus, these ASiNRs are supposed to be the nanoribbons grown in experiment. The electronic structures shows that the ASiNRs are metallic, which is in agreement with the experiments.     

Hydrocarbon film growth by energetic CH3 molecule impact on SiC (0 0 1) surface

Classic molecular dynamics (MD) calculations were performed to investigate the deposition of thin hydrocarbon film. SiC (1 0 0) surfaces were bombarded with energetic CH₃ molecules at impact energies ranging from 50 to 150 eV. The simulated results show that the deposition yield of H atoms decreases with increasing incident energy, which is in good agreement with experiments. During the initial stages, with breaking Si-C bonds in SiC by CH₃ impacting, H atoms preferentially reacts with resulting Si to form Si-H bond. The C/H ratio in the grown films increases with increasing incident energy. In the grown films, CH species are dominant. For 50 eV, H-Csp3 bond is dominant. With increasing energy to 200 eV, the atomic density of H-Csp2 bond increases.     

Photoinduced effect in Ga-Ge-S based thin films

Glassy films of Ga₁₀Ge₂₅S₆₅ with 4 μm thickness were deposited on quartz substrates by electron beam evaporation. Photoexpansion (PE) (photoinduced increase in volume) and photobleaching (PB) (blue shift of the bandgap) effects have been examined. The exposed areas have been analyzed using perfilometer and an expansion of 1.7 μm (ΔV/V ≈ 30%) is observed for composition Ga₁₀Ge₂₅S₆₅ exposed during 180 min and 3 mW/cm² power density. The optical absorption edge measured for the film Ge₂₅Ga₁₀S₆₅ above and below the bandgap show that the blue shift of the gap by below bandgap photon illumination is considerable higher (ΔE_g = 440 meV) than ΔE_g induced by above bandgap illumination (ΔE_g = 190 meV). The distribution of the refraction index profile showed a negative change of the refraction index in the irradiated samples (Δn = −0.6). The morphology was examined using a scanning electron microscopy (SEM). The chemical compositions measured using an energy dispersive analyzer (EDX) indicate an increase of the oxygen atoms into the irradiated area. Using a Lloyd's mirror setup for continuous wave holography it was possible to record holographic gratings using the photoinduced effects that occur in them. Diffraction efficiency up to 25% was achieved for the recorded gratings and atomic force microscopy images are presented.     

Dielectric relaxation study of poly(ethylene glycols) using TDR technique

Temperature dependent dielectric relaxation and thermodynamic properties of polyethylene glycols HO[CH₂CH₂O)_nH with number average molecular weight 200 (n = 4), 300 (n = 7), 400 (n = 9) and 600 (n = 14) g mol^− 1 have been studied using Time Domain Reflectometry (TDR) in the frequency range 10 MHz to 20 GHz. The frequency dependence of the complex dielectric permittivity is analyzed by the Havriliak-Negami expression. The static permittivity ε₀, high frequency limiting static permittivity ε_∞, average relaxation time τ₀ and thermodynamic energy parameters such as free energy, enthalpy of activation and entropy of activation have been determined. The average free energy of activation ΔF_τ for PEG molecules was found to be in the range 4-5 kcal mol^− 1. The values of entropy ΔS_τ for PEG-200, PEG-400 and PEG-600 molecules were found to be positive while entropy ΔS_τ for PEG-300 molecules was found negative, which confirms that the configuration of PEG-300 involved in the dipolar orientation has an activated state, which is more ordered than the normal state compared to PEG-200, PEG-400 and PEG-600 molecules.     

Pulsed laser deposited Er,Yb:YVO4 waveguiding films on MgO/Si substrates

Erbium, and erbium and ytterbium co-doped YVO₄ waveguiding films were deposited on MgO/Si substrates by PLD. The samples were post-annealed at two different temperatures in air atmosphere. The influence on the crystalline structure and waveguiding properties of the films at these annealing temperatures for two dopant concentrations was investigated. Layers annealed up to 900 °C are polycrystalline. The dominant fraction of YVO₄ crystallites exhibited preferred orientation of the (0 0 1) zone axes parallel to the substrate surface. The polycrystalline samples show difference in the refractive indexes Δn (Δn = n_TE − n_TM) for TE and TM polarizations.     

Textural and electronic characteristics of mechanochemically activated composites with nanosilica and activated carbon

Nanosilicas (A-50, A-300, A-500)/activated carbon (AC, S_BET = 1520 m²/g) composites were prepared using short-term (5 min) mechanochemical activation (MCA) of powder mixtures in a microbreaker. Smaller silica nanoparticles of A-500 (average diameter d_av = 5.5 nm) can more easily penetrate into broad mesopores and macropores of AC microparticles than larger nanoparticles of A-50 (d_av = 52.4 nm) or A-300 (d_av = 8.1 nm). After MCA of silica/AC, nanopores of non-broken AC nanoparticles remained accessible for adsorbed N₂ molecules. According to ultra-soft X-ray emission spectra (USXES), MCA of silica/AC caused formation of chemical bonds Si-O-C; however, Si-C and Si-Si bonds were practically not formed. A decrease in intensity of OK_α band in respect to CK_α band of silica/AC composites with diminishing sizes of silica nanoparticles is due to both changes in the surface structure of particles and penetration of a greater number of silica nanoparticles into broad pores of AC microparticles and restriction of penetration depth of exciting electron beam into the AC particles.     

Structural and optical properties of the SiCN thin films prepared by reactive magnetron sputtering

Silicon carbonitride (SiCN) thin films were deposited on n-type Si (1 0 0) and glass substrates by reactive magnetron sputtering of a polycrystalline silicon target in a mixture of argon (Ar), nitrogen (N₂) and acetylene (C₂H₂). The properties of the films were characterized by scanning electron microscope with an energy dispersive spectrometer, X-ray diffraction, Fourier transform infrared spectroscopy, X-ray photoelectron spectrometry and ultraviolet-visible spectrophotometer. The results show that the C₂H₂ flow rate plays an important role in the composition, structural and optical properties of the films. The films have an even surface and an amorphous structure. With the increase of C₂H₂ flow rate, the C content gradually increases while Si and N contents have a tendency to decrease in the SiCN films, and the optical band gap of the films monotonically decreases. The main bonds are Si-O, N-H_n, C-C, C-N, Si-N, Si-C and Si-H in the SiCN films while the chemical bonding network of Si-O, C-C, C-O, C-N, N-Si and CN is formed in the surface of the SiCN films.     

Electronic structures of zigzag AlN, GaN nanoribbons and AlxGa1−xN nanoribbon heterojunctions: First-principles study

The electronic and structural properties of zigzag aluminum nitride (AlN), gallium nitride (GaN) nanoribbons and Al_xGa_1−xN nanoribbon heterojunctions are investigated using the first-principles calculations. Both AlN and GaN ribbons are found to be semiconductor with an indirect band gap, which decreases monotonically with the increased ribbon width, and approaching to the gaps of their infinite two dimensional graphitic-like monolayer structures, respectively. Furthermore, the band gap of Al_xGa_1−xN nanoribbon heterojunctions is closely related to Al (and/or Ga) concentrations. The Al_xGa_1−xN nanoribbon of width n=8 shows a continuously band gap varying from about 2.2 eV-3.1 eV as x increases from 0 to 1. The large ranged tunable band gaps in such a quasi one dimension structure may open up new opportunities for these AlN/GaN based materials in future optoelectronic devices.     

Study on the interaction between promethazine hydrochloride and bovine serum albumin by fluorescence spectroscopy

The interaction between promethazine hydrochloride (PMT) and bovine serum albumin (BSA) in vitro was investigated by means of fluorescence spectroscopy and absorption spectroscopy. The fluorescence of BSA was quenched remarkably by PMT and the quenching mechanism was considered as static quenching by forming a complex. The association constants K_a and the number of binding sites n were calculated at different temperatures. The BSA-PMT binding distance was determined to be less than 8 nm, suggesting that energy transfer from BSA to PMT may occur. The thermodynamic parameters of the interaction between PMT and BSA were measured according to the van’t Hoff equation. The enthalpy change (ΔH) and entropy change (ΔS) were calculated to be −23.62 kJ mol⁻¹ and −0.10 J mol⁻¹ K⁻¹, respectively, which indicated that the interaction of PMT with BSA was driven mainly by van der Waals forces and hydrogen bonds. The binding process was a spontaneous process in which Gibbs free energy change (ΔG) was negative. In addition, the results of synchronous fluorescence spectra and three-dimensional fluorescence spectra showed that binding of PMT with BSA can induce conformational changes in BSA.     

First-principles studies on initial growth of Ni on MgO(0 0 1) surface

To elucidate the initial growth of metal on oxide surface, we studied adsorption of small nickel clusters, Ni_n (n = 1-5), on MgO(0 0 1) surface using first-principles method based on density-functional theory. It was found that the preferential adsorption site for an isolated Ni atom is directly above the surface oxygen atom. A strong covalent bond with partial ionic character is formed between the Ni adatom and the surface oxygen atom. Various structures were considered for the Ni_n isomers and 3D structures were found to be energetically more stable than 2D structures for clusters of more than two atoms. For the 2D clusters, metal-metal bonds prevail over metal-substrate bonds with increasing Ni coverage. The calculated work function and ionization energy were found to vary with Ni coverage which is attributed to the change of the surface dipole moment upon metal adsorption, while the evolution of Schottky barrier height at the initial growth stage is dominated by the adatom-induced gap states.     

Ab initio studies of electronic spectra of the linear aluminum-bearing carbon chains AlC2nH (n = 1-5)

Geometries and stabilities of the linear aluminum-bearing carbon chains AlC_2nH (n = 1-5) in their ground states have been explored by the DFT-B3LYP and RCCSD(T) methods. Structures of the X¹Σ⁺ and 1¹Π electronic states have also been optimized by the CASSCF approach. The studies indicate that these species have single-triple bond alternate pattern, AlCCCC?CCH, and the electronic excitation from X¹Σ⁺ to 1¹Π leads to the shortening of the AlC bonds. The vertical excitation energies of the 1¹Π ← X¹Σ⁺ and 2¹Π ← X¹Σ⁺ transitions for AlC_2nH (n = 1-5) have been investigated by the CASPT2, EOM-CCSD, and TD-B3LYP levels of theory with the cc-pVTZ basis set, respectively. CASPT2-predicted 1¹Π ← X¹Σ⁺ transition energies are 3.57, 3.44, 3.33, 3.26, and 3.21 eV, respectively. For AlC₂H, our estimate agrees very well with the experimental value of 3.57 eV. In addition, the AlC bond dissociation energies and the exponential-decay curves for these vertical excitation energies are also discussed.     

Beyond the pulse-area theorem: Role of the absorption and the dispersion in the propagation of weak ultrashort resonant pulses

We present here some fundamental but yet underlooked features of the propagation of weak ultrashort pulses (with Δ_dτ << 1, where Δ_d is the Doppler width and τ is the pulse duration) in resonant atomic media. We show that the pulse area behaviour and the pulse spectrum at resonance are governed by the usual optical depth (α₀L, where α₀ is the absorption coefficient at resonance and L the length of the medium), whereas the pertinent parameter that governs the severity of the dispersion effects and the distortion of the pulse is the dispersion parameter e_disp = (α₀L)Δ_dτ that we introduce. Paradoxical effect such as distortionless propagation (e.g. e_disp << 1) with vanishing pulse area (when α₀L >> 1) can then explained within this formalism.     

Periodicity and orientation dependence of electrical properties of [(Pb0.90La0.10)Ti0.975O3/PbTiO3]n (n = 1-6) multilayer thin films

The [(Pb_0.90La_0.10)Ti_0.975O₃/PbTiO₃]_n (PLT/PT)_n (n = 1-6) multilayer thin films were deposited on the PbO_x(1 0 0)/Pt/Ti/SiO₂/Si substrates by RF magnetron sputtering method. The layer thickness of PbTiO₃ in one periodicity kept unchanged, and the layer thickness of (Pb_0.90La_0.10)Ti_0.975O₃ is varied. The electrical properties of the (PLT/PT)_n multilayer thin films were investigated as a function of the periodicity (n) and the orientation. The studied results show that the PbO_x buffer layer results in the (PLT/PT)_n films’ (1 0 0) orientation, and the (1 0 0)-oriented (PLT/PT)_n multilayer thin films with n = 2 exhibit better pyroelectric properties and ferroelectric behavior than those of (PLT/PT)_n films with other periodicities and orientations. The underlying physical mechanism for the enhanced electrical properties of (PLT/PT)_n multilayer thin films was carefully discussed in terms of the periodicities and orientations.     

Formation of p-type ZnMgO thin films by In-N codoping method

In-N codoped ZnMgO films have been prepared on glass substrates by direct current reactive magnetron sputtering. The p-type conduction could be obtained in ZnMgO films by adjusting the N₂O partial pressures. The lowest resistivity was found to be 4.6 Ω cm for the p-type ZnMgO film deposited under an optimized N₂O partial pressure of 2.3 mTorr, with a Hall mobility of 1.4 cm²/V s and a hole concentration of 9.6 × 10¹⁷ cm⁻³ at room temperature. The films were of good crystal quality with a high c-axis orientation of wurtzite ZnO structure. The presence of In-N bonds was identified by X-ray photoelectron spectroscopy, which may enhance the nitrogen incorporation and respond for the realization of good p-type behavior in In-N codoped ZnMgO films. Furthermore, the ZnMgO-based p-n homojunction was fabricated by deposition of an In-doped n-type ZnMgO layer on an In-N codoped p-type ZnMgO layer. The p-n homostructural diode exhibits electrical rectification behavior of a typical p-n junction.     

Molecular dynamics study of interfacial bonding strength of self-assembled monolayer-coated Au-epoxy and Au-Au systems

Interfacial adhesion between metals and organic polymers plays a crucial role in the mechanical properties and reliability performance of multiplayer thin film structures. To improve their interfacial bonding strength and so the reliability, the self-assembled monolayer (SAM) method is considered as an effective means. The present study is devoted to studying the effects of SAM coating on the interfacial bonding strength of the Au-epoxy and the Au-Au bonding structures through molecular dynamics (MD) simulation. Three different types of functionalized alkanethiol SAMs (SH(CH₂)_nX, X = CH₃, OH, NH₂) chemisorbed onto two different Au crystal planes, i.e., (1 0 0) and (1 1 1), are considered. The study starts from the characterization of the interfacial bonding strength of both the SAM-coated Au-epoxy and Au-Au systems, followed by the investigation of the dependence of the interfacial bonding strength on the chain lengths and tail groups of the n-alkanethiolates. A comparative study of the effects of the crystal orientation of Au substrate on the bonding strength is reported, and the elastic moduli of these SAMs through uniaxial tensile simulation are also examined. The calculated results are compared with the published experimental data, and also with each other to identify the optimal SAM candidate.Results show that the interfacial bonding strength of the SAM-coated Au-epoxy and Au-Au systems exhibits a strong dependency on the crystal orientation of Au substrate and also on the chain length of the monolayer where it tends to increase with an increasing SAM chain length. In specific, the interfacial bonding strength of the SH(CH₂)_nCH₃ SAM-coated Au-Au joint would reach a maximal value at the chain length n = 8 while that of the SAM/epoxy interface in the SH(CH₂)_nCH₃ SAM-coated Au-epoxy system attains a minimal value at n = 4 and becomes the maximum at n = 10, regardless of the crystal orientation of the Au substrates. Besides, the Au substrate with (1 1 1) crystal orientation would outperform the Au(1 0 0) substrate in the SAM/epoxy interfacial bonding strength of the SAM-coated Au-epoxy system while there is a totally opposite result for that of the SAM-coated Au-Au joint.     

Controlling surface states and photoluminescence of porous silicon by low-energy-ion irradiation

Porous silicon (PS) was irradiated by three kinds of low-energy ions with different chemical activity, namely argon ions, nitrogen ions and oxygen ions. The chemical activity of ions has significant effect on the surface states and photoluminescence (PL) properties of PS, The photoluminescence quenching after argon ions and nitrogen ions irradiation is ascribed to the broken Si-Si bonds, while the PL recovery is attributed to the oxidation of Si-H back bonds. Oxygen ions irradiation leads to the formation of a SiO_x layer with oxygen defects and PS shows different PL evolution than PS irradiated by argon ions and nitrogen ions.     

Lithium and antimony adsorbed on graphene studied by first-principles calculations

We have investigated the Sb and Sb₂ doping of graphene and the effect of Li_n (n = 2-4) atoms in detail. We find chemisorption only when we replace C with Sb and Sb₂ and distort the lattice. The additional adsorption of Li atoms changes the electronic band structure of the system.     

Large negative refractive index modification induced by irradiation of femtosecond laser inside optical glasses

We report on the refractive index modification (Δn) and its cross sectional profile of the created lines inside the different types of optical glasses, containing BaO, TiO₂, or La₂O₃ as a metal oxide. The lines were fabricated by scanning a stage and focusing the femtosecond laser pulses, 800 nm wavelength, a 250 kHz repetition rate and 200 fs pulse duration, from the Ti:sapphire regenerative amplifier system. The Δn measurements were performed with the qualitative phase microscopy technique. As a result, it was found that the Δn and its sign are different depending on glass types. For example, in the glasses containing TiO₂, the Δn became smaller in the modified region and some of them showed relatively large decrease of the Δn, Δn < −0.01, with about 10 μm width. Such a glass material could be useful for the compact optics and optical devices.