Impurity effects of the Λhyperon in the hypernuclear systems ${}_{{\rm{\Lambda }}}^{25}\mathrm{Mg}$ and ${}_{{\rm{\Lambda }}}^{29}\mathrm{Si}$

Based on the beyond-mean-field Skyrme–Hartree–Fock model, impurity effects of the Λhyperon in the hypernuclear systems ${}_{\,{\rm{\Lambda }}}^{25}$ Mg and ${}_{\,{\rm{\Lambda }}}^{29}$ Si are investigated, respectively. Four cases, in which the Λhyperon occupies the single-particle orbitals ${\rm{\Lambda }}$[000]${\tfrac{1}{2}}^{+}$, ${\rm{\Lambda }}$[110]${\tfrac{1}{2}}^{-}$, ${\rm{\Lambda }}$[101]${\tfrac{3}{2}}^{-}$ and ${\rm{\Lambda }}$[101]${\tfrac{1}{2}}^{-}$, are focused. In each case, the potential energy surface and the energy curves projected on certain angular momenta are employed to show the influence of the Λhyperon on the nuclear core. Beside the shrinkage effect that is induced by the Λhyperon occupying the s_Λ orbital, it is found that the Λhyperon on the p_Λ orbital, ${\rm{\Lambda }}$[110]${\tfrac{1}{2}}^{-}$, drives the nuclear core toward a prolate shape, while the ones on the other two p_Λ orbitals, ${\rm{\Lambda }}$[101]${\tfrac{3}{2}}^{-}$ and ${\rm{\Lambda }}$[101]${\tfrac{1}{2}}^{-}$, drive the nuclear core toward an oblate shape. The energy spectra and the corresponding intra-band E2 transition rates for the rotational bands are given as a prediction for future experiments.     

Ab initio calculations of the ionization spectrum of SO2

The ionization spectrum of sulfur dioxide has been successfully studied by using the symmetry-adapted-cluster configuration-interaction （SAC-CI） general-R and SD-R methods and the basis set correlation-consistent polarized valence triple-zeta （cc-pVTZ）. The SAC-CI general-R method reproduces the experimental spectrum well for both the main peaks and the satellite peaks of ionization spectrum of SO2. The sequence of ionic states corresponding to main peaks of SO2 has been re-determined according to the SAC-CI conclusions and it is reordered as X^2A1, A^2B2, B2A2, C^2B1,D^2A1, E^2B2 and F^2A1. Besides, the equilibrium structures and adiabatic ionization potentials （AIPs） of ionic states of main peaks of SO2 are calculated by using the SAC-CI SD-R method.     

Improved performance of MoS2 FET by in situ NH3 doping in ALD Al2O3 dielectric

Since defects such as traps and oxygen vacancies exist in dielectrics, it is difficult to fabricate a high-performance MoS$_{2}$ field-effect transistor (FET) using atomic layer deposition (ALD) Al$_{2}$O$_{3}$ as the gate dielectric layer. In this paper, NH$_{3}$ in situ doping, a process treatment approach during ALD growth of Al$_{2}$O$_{3}$, is used to decrease these defects for better device characteristics. MoS$_{2}$ FET has been well fabricated with this technique and the effect of different NH$_{3}$ in situ doping sequences in the growth cycle has been investigated in detail. Compared with counterparts, those devices with NH$_{3}$ in situ doping demonstrate obvious performance enhancements: $I_{\rm on}/I_{\rm off}$ is improved by one order of magnitude, from $1.33\times 10^{5}$ to $3.56\times 10^{6}$, the threshold voltage shifts from $-0.74 $ V to $-0.12$ V and a small subthreshold swing of 105 mV/dec is achieved. The improved MoS$_{2}$ FET performance is attributed to nitrogen doping by the introduction of NH$_{3}$ during the Al$_{2}$O$_{3}$ ALD growth process, which leads to a reduction in the surface roughness of the dielectric layer and the repair of oxygen vacancies in the Al$_{2}$O$_{3}$ layer. Furthermore, the MoS$_{2}$ FET processed by in situ NH$_{3}$ doping after the Al and O precursor filling cycles demonstrates the best performance; this may be because the final NH$_{3}$ doping after film growth restores more oxygen vacancies to screen more charge scattering in the MoS$_{2}$ channel. The reported method provides a promising way to reduce charge scattering in carrier transport for high-performance MoS$_{2 }$ devices.     

Co-Al-W基高温合金的团簇成分式

Co-Al-W基高温合金具有类似于Ni基高温合金的γ+γ'相组织结构.根据面心立方固溶体的团簇加连接原子结构模型,Ni基高温合金的成分式即最稳定的化学近程序结构单元可以描述为第一近邻配位多面体团簇加上次近邻的三个连接原子.本文应用类似方法,首次给出了Co-Al-W基高温合金的团簇成分式.利用原子半径和团簇共振模型,可计算出Co-Al-W三元合金的团簇成分通式,为[Al-Co_(12)](Co,Al,W)_3,即以Al为中心原子、Co为壳层原子的[Al-Co_(12)]团簇加上三个连接原子.对于多元合金,需要先将元素进行分类:溶剂元素——类Co元素Co (Co, Cr, Fe, Re, Ni,Ir,Ru)和溶质元素——类Al元素Al (Al,W,Mo, Ta,Ti,Nb,V等);进而根据合金元素的配分行为,将类Co元素分为Co~γ(Cr, Fe, Re)和Co~(γ')(Ni, Ir, Ru);根据混合焓,将类Al元素分为Al, W (W, Mo)和Ta (Ta, Ti, Nb, V等).由此,任何多元Co-Al-W基高温合金均可简化为Co-Al伪二元体系或者Co-Al-(W,Ta)伪三元体系,其团簇加连接原子成分式为[Al-Co_(12)](Co_(1.0)Al_(2.0))(或[Al-Co_(12)] Co_(1.0)Al_(0.5)(W,Ta)_(1.5)=Co_(81.250)Al_(9.375)(W,Ta)_(9.375) at.%).其中,γ与γ'相的团簇成分式分别为[Al-Co_(12)](Co_(1.5)Al_(1.5))(或[Al-Co_(12)] Co_(1.5)Al_(0.5)(W,Ta)_(1.0)=Co_(84.375)Al_(9.375)(W,Ta)_(6.250) at.%)和[Al-Co_(12)](Co_(0.5)Al_(2.5))(或[Al-Co_(12)] Co_(0.5)Al_(0.5)(W, Ta)_(2.0)=Co_(78.125)Al_(9.375)(W,Ta)_(12.500)at.%).例如,Co_(82)Al_9W_9合金的团簇成分式为[Al-Co_(12)]Co_(1.1)Al_(0.4)W_(1.4)(～[Al-Co_(12)]Co_(1.0)Al_(0.5)W_(1.5)),其中γ相的团簇成分式为[Al-Co_(12)]Co_(1.6)Al_(0.4)W_(1.0)(～[Al-Co_(12)]Co_(1.5)Al_(0.5)W_(1.0)),γ'相的团簇成分式为[Al-Co_(12)]Co_(0.3)Al_(0.5)W_(2.2)(～[AlCo_(12)]Co_(0.5)Al_(0.5)W_(2.0)).     

Guiding of 150 keV O6＋ ions through nanocapillaries in an uncoated Al2O3 membrane： special time dependence of the transmission profile width

<正>This paper reports that the transmission of O⁶⁺ ions with energy of 150keV through capillaries in an uncoated Al₂O₃ membrane was measured,and agreements with previously reported results in general angular distribution of the transmitted ions and the transmission fractions as a function of the tilt angle well fitted to Gaussian-like functions were observed.Due to using an uncoated capillary membrane,ourψ_c is larger than that using a gold-coated one with a smaller value of（?）,which suggests a larger equilibrium charge Q_∞in our experiment.The observed special width variation with time and a larger width than that using a smaller（?） were qualitatively explained by using mean-field classical transport theory based on a classical-trajectory Monte Carlo simulation.     

Effect of lithium-potassium mixed alkali on spectroscopic properties of Er^3＋-doped aluminophosphate glasses

Er^3＋-doped lithium-potassium mixed alkali aluminophosphate glasses belonging to the oxide system xK2O-（15-x）Li2O-4B2O3-11Al2O3-5BaO-65P2O5 are obtained in a semi-continuous melting quenching process. Spectroscopic properties of Er^3＋-doped glass matrix have been analysed by fitting the experimental data with the standard Judd-Ofelt theory. It is observed that Judd-Ofelt intensity parameters Ωt（t = 2, 4 and 6） of Er^3＋ change when the second alkali is introduced into glass matrix. The variation of line strength Sed[^4I13/2,^4I15/2] follows the same trend as that of the/26 parameter. The effect of mixed alkali on the spectroscopic properties of the aluminophosphate glasses, such as absorption cross-section, stimulated emission cross-section, spontaneous emission probability, branching ratio and the radiative lifetime, has also been investigated in this paper.     

Enhancement of magnetic and dielectric properties of low temperature sintered NiCuZn ferrite by Bi2O3-CuO additives

With a series of 1.0 wt%Bi$_{2}$O$_{3}$-$x$ wt% CuO ($x =0.0$, 0.2, 0.4, 0.6, and 0.8) serving as sintering additives, Ni$_{0.23}$Cu$_{0.32}$Zn$_{0.45}$Fe$_{2}$O$_{4}$ ferrites are successfully synthesized at a low temperature (900 $^\circ$C) by using the solid state reaction method. The effects of the additives on the phase formation, magnetic and dielectric properties as well as the structural and gyromagnetic properties are investigated. The x-ray diffraction (XRD) results indicate that the added Bi$_{2}$O$_{3}$-CuO can lower the synthesis temperature significantly without the appearing of the second phase. The scanning electron microscope (SEM) images confirm that Bi$_{2}$O$_{3}$ is an important factor that determines the sintering behaviors, while CuO affects the grain size and densification. With CuO content $x=0.4$ or 0.6, the sample shows high saturation magnetization, low coercivity, high real part of magnetic permeability, dielectric permittivity, and small ferromagnetic resonance linewidth ($\Delta H$). The NiCuZn ferrites are a promising new generation of high-performance microwave devices, such as phase shifters and isolators.     

Covalent hadronic molecules induced by shared light quarks

After examining Feynman diagrams corresponding to the ${\bar{D}}^{(* )}{{\rm{\Sigma }}}_{c}^{(* )}$, ${\bar{D}}^{(* )}{{\rm{\Lambda }}}_{c}$, ${D}^{(* )}{\bar{K}}^{* }$, and ${D}^{(* )}{\bar{D}}^{(* )}$ hadronic molecular states, we propose a possible binding mechanism induced by shared light quarks. This mechanism is similar to the covalent bond in chemical molecules induced by shared electrons. We use the method of QCD sum rules to calculate its corresponding light-quark-exchange diagrams, and the obtained results indicate a model-independent hypothesis: the light-quark-exchange interaction is attractive when the shared light quarks are totally antisymmetric so they obey the Pauli principle. We build a toy model with four parameters to formulize this picture and estimate binding energies of some possibly-existing covalent hadronic molecules. A unique feature of this picture is that the binding energies of the (I)J^P = (0)1⁺ $D{\bar{B}}^{* }/{D}^{* }\bar{B}$ hadronic molecules are much larger than those of the (I)J^P = (0)1⁺ ${{DD}}^{* }/\bar{B}{\bar{B}}^{* }$ ones, while the (I)J^P = (1/2)1/2⁺ $\bar{D}{{\rm{\Sigma }}}_{c}/\bar{D}{{\rm{\Sigma }}}_{b}/B{{\rm{\Sigma }}}_{c}/B{{\rm{\Sigma }}}_{b}$ hadronic molecules have similar binding energies.     

Fast proton conduction path in {\text{Ni}} - {\text{BaCe}}_{{0.8}} {\text{Y}}_{{0.2}} {\text{O}}_{{2.9 - \delta }} membrane

The effect of metal-to-oxide grain boundary layer in $ {\text{Ni}} - {\text{BaCe}}_{{0.8}} {\text{Y}}_{{0.2}} {\text{O}}_{{3 - \delta }} $ (BCY) cermet membrane on hydrogen permeation was studied by applying the different size of oxide grain on Ni-BCY membranes. Two types of cermet membranes having different grain size of oxide were prepared by using different starting particle size of oxide powder. The hydrogen flux of coarse-oxide-grain membrane showed higher flux than that of small-oxide-grain membrane. It was understood that the negative potential at metal-to-oxide grain boundary, reference to the bulk oxide ( $ \phi _{0} < \phi _{\infty } = 0 $ ), was developed, and the accumulation of the effectively positively charged protons may occur at the grain boundary layer (space charge layer), which may result in providing highly conductive proton path by shifting the charge neutrality condition from $ {\left[ {OH^{ \bullet }_{O} } \right]} = {\left[ {Y^{/}_{{Ce}} } \right]} $ to $ {\left[ {OH^{ \bullet }_{O} } \right]} = n $ .     

Quantum numbers of the pentaquark states ${{\rm{P}}}_{{\rm{c}}}^{+}$ via symmetry analysis

We investigate the quantum numbers of the pentaquark states ${{\rm{P}}}_{{\rm{c}}}^{+}$, which are composed of 4 (three flavors) quarks and an antiquark, by analyzing their inherent nodal structure in this paper. Assuming that the four quarks form a tetrahedron or a square, and the antiquark is at the ground state, we determine the nodeless structure of the states with orbital angular moment L≤3, and in turn, the accessible low-lying states. Since the inherent nodal structure depends only on the inherent geometric symmetry, we propose the quantum numbers J^P of the low-lying pentaquark states ${{\rm{P}}}_{c}^{+}$ may be ${\tfrac{3}{2}}^{-}$, ${\tfrac{5}{2}}^{-}$, ${\tfrac{3}{2}}^{+}$and ${\tfrac{5}{2}}^{+}$, independent of dynamical models.     

Magnetization and magnetic phase diagrams of a spin-1/2 ferrimagnetic diamond chain at low temperature

We used the Jordan–Wigner transform and the invariant eigenoperator method to study the magnetic phase diagram and the magnetization curve of the spin-1/2 alternating ferrimagnetic diamond chain in an external magnetic field at finite temperature. The magnetization versus external magnetic field curve exhibits a 1/3 magnetization plateau at absolute zero and finite temperatures, and the width of the 1/3 magnetization plateau was modulated by tuning the temperature and the exchange interactions. Three critical magnetic field intensities H_(CB), H_(CE) and H_(CS) were obtained, in which the H_(CB) and H_(CE) correspond to the appearance and disappearance of the 1/3 magnetization plateau, respectively, and the higher H_(CS) correspond to the appearance of fully polarized magnetization plateau of the system. The energies of elementary excitation ωσ,k(σ = 1, 2, 3) present the extrema of zero at the three critical magnetic fields at 0 K, i.e., [hω_(3,k)(HCB)]_(min)= 0, [hω_(2,k)(H_(CE))]_(max)= 0 and [hω _(2,k)(H_(CS))]_(min)= 0, and the magnetic phase diagram of magnetic field versus different exchange interactions at 0 K was established by the above relationships. According to the relationships between the system's magnetization curve at finite temperatures and the critical magnetic field intensities, the magnetic field-temperature phase diagram was drawn. It was observed that if the magnetic phase diagram shows a three-phase critical point, which is intersected by the ferrimagnetic phase, the ferrimagnetic plateau phase, and the Luttinger liquid phase, the disappearance of the1/3 magnetization plateau would inevitably occur. However, the 1/3 magnetization plateau would not disappear without the three-phase critical point. The appearance of the 1/3 magnetization plateau in the low temperature region is the macroscopic manifestations of quantum effect.     

Physical analysis of normally-off ALD Al2O3/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique

Based on the self-terminating thermal oxidation-assisted wet etching technique, two kinds of enhancement mode Al$_{2}$O$_{3}$/GaN MOSFETs (metal-oxide-semiconductor field-effect transistors) separately with sapphire substrate and Si substrate are prepared. It is found that the performance of sapphire substrate device is better than that of silicon substrate. Comparing these two devices, the maximum drain current of sapphire substrate device (401 mA/mm) is 1.76 times that of silicon substrate device (228 mA/mm), and the field-effect mobility ($\mu_{\rm FEmax}$) of sapphire substrate device (176 cm$^{2}$/V$\cdot$s) is 1.83 times that of silicon substrate device (96 cm$^{2}$/V$\cdot$s). The conductive resistance of silicon substrate device is 21.2 $\Omega {\cdot }$mm, while that of sapphire substrate device is only 15.2 $\Omega {\cdot }$mm, which is 61% that of silicon substrate device. The significant difference in performance between sapphire substrate and Si substrate is related to the differences in interface and border trap near Al$_{2}$O$_{3}$/GaN interface. Experimental studies show that (i) interface/border trap density in the sapphire substrate device is one order of magnitude lower than in the Si substrate device, (ii) Both the border traps in Al$_{2}$O$_{3}$ dielectric near Al$_{2}$O$_{3}$/GaN and the interface traps in Al$_{2}$O$_{3}$/GaN interface have a significantly effect on device channel mobility, and (iii) the properties of gallium nitride materials on different substrates are different due to wet etching. The research results in this work provide a reference for further optimizing the performances of silicon substrate devices.     

Ab initio calculation of the ground and first excited states of the lithium dimer

Based on a high level ab initio calculation which is carried out with the multireference configuration interaction method under the aug-cc-pVXZ (AVXZ) basis sets, X=T, Q, 5, the accurate potential energy curves (PECs) of the ground state ${\rm{X}}{}^{{\rm{1}}}{\rm{\Sigma }}_{g}^{+}$ and the first excited state ${\rm{A}}{}^{{\rm{1}}}{\rm{\Sigma }}_{u}^{+}$ of Li₂ are constructed. By fitting the ab initio potential energy points with the Murrell–Sorbie potential function, the analytic potential energy functions (APEFs) are obtained. The molecular bond length at the equilibrium (R_e), the potential well depth (D_e), and the spectroscopic constants (B_e, ω_e, α_e, and ω_eχ_e) for the ${\rm{X}}{}^{{\rm{1}}}{\rm{\Sigma }}_{g}^{+}$ state and the ${\rm{A}}{}^{{\rm{1}}}{\rm{\Sigma }}_{u}^{+}$ state are deduced from the APEFs. The vibrational energy levels of the two electronic states are obtained by solving the time-independent Schrödinger equation with the Fourier grid Hamiltonian method. All the spectroscopic constants and the vibrational levels agree well with the experimental results. The Franck–Condon factors (FCFs) corresponding to the transitions from the vibrational level (v′=0) of the ground state to the vibrational levels (v″=0–74) of the first excited state have been calculated. The FCF for the vibronic transition of ${\rm{A}}{}^{{\rm{1}}}{\rm{\Sigma }}_{u}^{+}$(v″=0) ←${\rm{X}}{}^{{\rm{1}}}{\rm{\Sigma }}_{g}^{+}$(v′=0) is the strongest. These PECs and corresponding spectroscopic constants provide reliable theoretical references to both the spectroscopic and the molecular dynamic studies of the Li₂ dimer.     

用H-W-ECR CVD系统实现氢化非晶硅薄膜在氢气环境下同时进行化学热退火和光诱导退火的研究

为了研究氢化非晶硅薄膜的稳定性，我们设计了一个在原子氢气氛中热退火的同时进行光诱导退火的实验(TLAH)。实验装置是由传统的微波电子回旋共振化学气相沉积系统改造而成为热丝辅助微波电子回旋共振化学气相沉积系统。为了对这一退火方法进行比较，对样品还进行了热退火、热退火同时进行光诱导退火。同时，为了定量地分析光电导衰退，我们假设光电导衰退遵循扩展指数规律：1/σph=1/σs-(1/σs-1/σ0)exp[-(t/τ)β]，这里扩展指数参数β 和时间常数 τ 可从与 lnt 的线性关系中截距和斜率得到, 式中光电导饱和值σs可以通过在对数坐标系中表示的光电导和光照时间关系进行高斯拟合得到。实验结果显示：TLAH 方法可以提高氢化非晶硅薄膜的稳定性、改善其微结构和光电特性，同时还发现，光学带隙明显减小、荧光光谱显著地朝着低能方向移动。     

Magnetocaloric properties and Griffiths phase of ferrimagnetic cobaltite CaBaCo4O7

We present a study on the magnetocaloric properties of a CaBaCo$_{4}$O$_{7}$ polycrystalline cobaltite along with research on the nature of magnetic phase transition. The magnetization as a function of temperature identifies the ferrimagnetic to paramagnetic transition at a Curie temperature of 60 K. Moreover, a Griffiths-like phase is confirmed in a temperature range above $T_{\rm C}$. The compound undergoes a crossover from the first to second-order ferrimagnetic transformation, as evidenced by the Arrott plots, scaling of the universal entropy curve, and field-dependent magnetic entropy change. The maximum of entropy change is 3 J/kg$\cdot$K for $\Delta H = 7$ T at ${T}_{\rm C}$, and a broadening of the entropy peak with increasing magnetic field indicates a field-induced transition above $T_{\rm C}$. The analysis of the magnetic entropy change using the Landau theory reveals the second-order phase transition and indicates that the magnetocaloric properties of CaBaCo$_{4}$O$_{7}$ are dominated by the magnetoelastic coupling and electron interaction. The corresponding values of refrigerant capacity and relative cooling power are estimated to be 33 J/kg and 42 J/kg, respectively.     

Improved analysis of the rare decay processes of Λ_b

It is noted that in the new Particle Data Group(PDG) version the rare decays of the Λ_b baryon have been revised with more accuracy. The new results show that most of the existing theoretical results on the process Λ_b→Λ_γ Lgbare larger than those of experiments. With the improved higher-order light-cone distribution amplitudes of the Λ baryon, we reanalyze the process in the framework of light-cone quantum chromodynamics sum rules and the branching ratio is estimated to be Br (Λ_b→Λ_γ)=(7.38_(-0.39)~(+0.40))×10~(16), which is consistent with the new experimental result. Furthermore, another process Λ_b→Λl~+l~- is also analyzed in the same frame. The final branching ratio is calculated to be Br (Λ_b→Λl~+l~-)=1.20×10~(-6), which is in good accordance with the data from the PDG and other theoretical predictions.     

激光冷却SH~–阴离子的理论研究

本文采用多组态相互作用及Davidson修正方法和全电子基组计算了SH~-阴离子的X~1∑~+,a~3∏和A~1∏态的势能曲线、电偶极矩和跃迁偶极矩.计算的光谱常数与实验值及已有的理论值符合得很好.在计算中考虑了自旋-轨道耦合效应.计算得到a~3∏_1(v'=0)?X~1∑_(0+)~+(v"=0)和A~1∏_1(v'=0)?X~1Σ_(0+)~+(v"=0)跃迁具有高对角分布的弗兰克-康登因子,分别为0.9990和0.9999;计算得到a~3∏_1和A~1∏_1态的自发辐射寿命分别为1.472和0.188 ms.A~1∏_1?X~1∑_(0+)~+跃迁存在中间态a~3∏_(0+)和a~3∏_1,但中间态对激光冷却SH~-阴离子的影响可以忽略.分别利用a~3∏_1(v'=0)? X~1∑_(0+)~+(v"=0)和A~1∏_1(v'=0)? X~1∑_(0+)~+(v"=0)跃迁构建了准闭合的能级系统,冷却所需的激光波长分别为492.27和478.57 nm.最后预测了激光冷却SH~-阴离子能达到的多普勒温度和反冲温度.这些结果为进一步实验提供了理论参数.     

A precise measurement of the tau lifetime

The tau lepton lifetime has been measured with the events collected by the DELPHI detector at LEP in the years 1991-1995. Three different methods have been exploited, using both one-prong and three-prong decay channels. Two measurements have been made using events in which both taus decay to a single charged particle. Combining these measurements gave . A third measurement using taus which decayed to three charged particles yielded These were combined with previous DELPHI results to measure the tau lifetime, using the full LEP1 data sample, to be .Received: 12 November 2003, Revised: 1 June 2004, Published online: 20 July 2004     

Isotopic effect of Cl2+ rovibronic spectra in the A-X system

This paper studies the isotopic effect of Cl2+ rovibronic spectra in the A2Πu(Ω=1/2) X 2Πg(Ω= 1/2) system.Based on the experimental results of the molecular constants of 35 Cl2+,it calculates the vibrational isotope shifts of the(2,7) and(3,7) band between the isotopic species 35 Cl+2,35 Cl 37 Cl+and 37 Cl2+,and estimates the rotational constants of both A 2 Π u and X 2 Π g states for the minor isotopic species 35 Cl 37 Cl+and 37 Cl2+.The experimental results of the spectrum of 35 Cl 37 Cl+(3,7) band proves the above mentioned theoretical calculation.The molecular constants and thus resultant rovibronic spectrum for 37 Cl2+ were predicted,which will be helpful for further experimental investigation.     

Two-electron and one-photon transitions in highly charged nickel-like ions

This paper calculates the transition wavelengths and probabilities of the two-electron and one-photon (TEOP) transition from the $(3{\rm s}^{-1}_{1/2}4{\rm d}_{j})_{J=1,2}$ to $(3{\rm p}^{-1}_{3/2}4{\rm s}_{1/2})_{J=1}$ and the $(3{\rm p}^{-1}_{1/2}4{\rm s}_{1/2})_{J=1}$ to $(3{\rm d}^{-1}_{j}4{\rm d}_{j'})_{J=1,2}$ for highly charged Ni-like ions with atomic number $Z$ in the range $47\leq Z\leq92$. In the calculations, the multi-configuration Dirac--Fock method and corresponding program packages GRASP92 and REOS99 were used, and the relativistic effects, correlation effects and relaxation effects were considered systematically. It is found that the TEOP transitions are very sensitive to the correlation of electrons, and the probabilities will be enhanced sharply in some special $Z$ regions along the isoelectronic sequence. The present TEOP transition wavelengths are compared with the available data from some previous publications, good agreement is obtained.