Effect of strain on multisubband electron transport in GaAs/InxGa1-xAs coupled quantum well structures

We analyze the strain induced changes in the low temperature multisubband electron mobility mediated through the intersubband interactions in a pseudomorphic GaAs/In_xGa_1−xAs coupled double quantum well structure. We consider the non-phonon scattering mechanisms and study the effect of strain on them. We show that strain reduces the mobility due to ionized impurity (imp-) scattering μ^imp but enhances the mobility due to interface roughness (IR-) scattering μ^IR. For alloy disorder (AL-) scattering as long as the lowest subband is occupied, the effect of strain enhances the mobility μ^AL. However, once the second subband is occupied, there is almost no change, rather decrease in μ^AL for larger well widths. It is gratifying to note that for single subband occupancy, the effect of strain enhances the total mobility μ. On the other hand, for double subband occupancy, initially there is almost no change, but with increase in well width the total mobility reduces. We vary the In composition x from 0.15 to 0.2 and 0.25 and the barrier width between the two wells to analyze their effects on the mobility which shows interesting results. Our study of multisubband mobility can be utilized for the low temperature device applications.     

AlxGa1-x N/GaN调制掺杂异质结构的子带性质研究

通过低温和强磁场下的磁输运测量研究了Al_0.22Ga_0.78N/GaN调制掺杂异质结构中2DEG的子带占据性质和子带输运性质.在该异质结构的磁阻振荡中观察到了双子带占据现象，并发现2DEG的总浓度随第二子带浓度的变化呈线性关系.得到了该异质结构中第二子带被2DEG占据的阈值电子浓度为7.3×10¹²cm^-2.采用迁移率谱技术得到了不同样品的分别对应于第一和第二子带的输运迁移率.发现当样品产生应变弛豫时第一子带的电子迁移 关键词： AlGaN/GaN异质结 二维电子气 子带占据 输运迁移率     

Magnetotransport in modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterojunctions: in-plane effective mass,quantum and transport mobilities of 2D electrons

Shubnikov–de Haas (SdH) and Hall effect measurements, performed in the temperature range between 3.3 and 20 K and at magnetic fields up to 2.3 T, have been used to investigate the electronic transport properties of lattice-matched In_0.53Ga_0.47As/In_0.52Al_0.48As heterojunctions. The spacer layer thickness (t_S) in modulation-doped samples was in the range between 0 and 400 Å. SdH oscillations indicate that two subbands are already occupied for all samples except for that witht_S =  400 Å. The carrier density in each subband, Fermi energy and subband separation have been determined from the periods of the SdH oscillations. The in-plane effective mass (m ^* ) and the quantum lifetime (τ_q) of 2D electrons in each subband have been obtained from the temperature and magnetic field dependences of the amplitude of SdH oscillations, respectively. The 2D carrier density (N₁) in the first subband decreases rapidly with increasing spacer thickness, while that (N₂) in the second subband, which is much smaller thanN₁ , decreases slightly with increasing spacer thickness from 0 to 200 Å. The in-plane effective mass of 2D electrons is similar to that of electrons in bulk In_0.53Ga_0.47As and show no dependence on spacer thickness. The quantum mobility of 2D electrons is essentially independent of the thickness of the spacer layer in the range between 0 and 200 Å. It is, however, markedly higher for the samples with a 400 Å thick spacer layer. The quantum mobility of 2D electrons is substantially smaller than the transport mobility which is obtained from the Hall effect measurements at low magnetic fields. The transport mobility of 2D electrons in the first subband is substantially higher than that of electrons in the second subband for all samples with double subband occupancy. The results obtained for transport-to-quantum lifetime ratios suggest that the scattering of electrons in the first subband is, on average, forward displaced in momentum space, while the electrons in the second subband undergo mainly large-angle scattering.     

In0.53Ga0.47As/In0.52Al0.48As量子阱中的正磁电阻效应

在低温强磁场条件下,对In_0.53Ga_0.47As/In_0.52Al_0.48As量子阱中的二维电子气进行了磁输运测试.在低磁场范围内观察到正磁电阻效应,在高磁场下这一正磁电阻趋于饱和,分析表明这一现象与二维电子气中的电子占据两个子带有关.在考虑了两个子带之间的散射效应后,通过分析低磁场下的正磁电阻,得到了每个子带电子的迁移率,结果表明第二子带电子的迁移率高于第一子带电子的迁移率.进一步分析表明,这主要是由两个子带之间的 关键词： 二维电子气 正磁电阻 子带散射     

Beating patterns in the oscillatory magnetoresistance of an AlGaN/GaN heterostructure

Magneto-transport measurements have been carried out on a modulation-doped Al_0.22Ga_0.78N/GaN heterostructure in a temperature range between 1.5 and 25 K with a rather high carrier density, 1.1×10¹³ cm⁻². Striking beating patterns in magnetoresistance vs magnetic field are observed in the vicinity of a special temperature. Theoretical simulation is performed and the comparison between numerical simulations and the experimental data reveals that the beating patterns are due to the interference of the magneto-intersubband scattering and the SdH oscillator of first subband.     

Peculiarities in galvanomagnetic properties of granular YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7−δ</Subscript> high-temperature superconductors in very weak magnetic fields

The character of the evolution of a system of weak links in granular high-temperature superconductors under the action of an external magnetic field H _ext has been studied by measuring the current-voltage characteristics E(j)_{Hext = const}E{(j)_{{H_{ext}} = const}} of YBa₂Cu₃O_{7 − δ} (δ ≈ 0.05) ceramic samples. The measurements have been performed at T = 77.3 K in a range of very weak magnetic fields 0 < H _ext ≲ 0.5H _c2J, where H _c2J is the upper critical field of the Josephson weak links. The results have been used to construct the field dependences of the magnetoresistance Δρ(H _ext) of the superconducting ceramics. It has been established that the parameters of the power equation E = A(j − j _cJ)^ν and the magnetoresistance Δρ are nonmonotonic functions of the external magnetic field. The presence of extrema in the curves A(H _ext), j _cJ(H _ext), ν(H _ext), and Δρ(H _ext) indicates that different systems of weak links between grain boundaries, which are capable of forming extended Josephson contacts, undergo sequential transitions to a resistive state with an increase in H _ext.     

Contribution of superconducting grains and grain boundaries to the magnetoresistance of ceramic YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7 − δ</Subscript> high-temperature superconductors in weak magnetic fields

The current-voltage characteristics of granular YBa₂Cu₃O_6.95 high-temperature superconductor samples have been measured at a temperature of 77.3 K in external transverse magnetic fields H _ext with a strength of up to H _ext ≈ 500 Oe for low transport current densities (0.1 A/cm² ≤ j ≤ 0.6 A/cm²). The current-voltage characteristics obtained have been used to construct dependences of the magnetoresistance ρ on the quantities j (ρ(j) _Hext=const) and H _ext(ρ(H _ext) _{j = const}). It has been revealed that the current and field dependences of the magnetoresistance exhibit anomalies at H _ext ≥ H _c1g , where H _c1g is the lower critical field of superconducting grains. A comparative analysis of the dependences ρ(j)H _{ext = const} and ρ(H _ext) _{j = const} has made it possible to develop concepts regarding the influence of the processes of redistribution of the magnetic field between grain boundaries and superconducting grains on the transport and galvanomagnetic properties of granular high-temperature superconductors. It has been established that the field dependences of the magnetoresistance exhibit specific features associated with the beginning of penetration of Josephson vortices into grain boundaries in the magnetic field H _c1J and with the breaking of a continuous chain of Josephson junctions in the magnetic field H _c2J .     

Valence-band structure and optical absorption inp-type GaAs–Al0.3Ga0.7As multi-quantum-well infrared photodetectors under an electric field

Hole structure of a GaAs–Al_0.3Ga_0.7Asp-type multiple quantum well (MQW) subjected to an electric field parallel to the growth axis is studied using the envelope-function approximation and taking into account the valence subband mixing. The system considered in this work consists of five GaAs wells and six thick Al_0.3Ga_0.7As barriers. The valence subband structure and the optical-absorption coefficient are calculated as functions of the electric-field strength for various doping levels. The subband structure is shown to be nonparabolic and anisotropic in the plane of the layers with a four-fold symmetry. The spin splitting due to the lack of specular symmetry of quantum wells is a growing function of the electric-field strength. The calculated optical absorption is in good agreement with the experimental spectra.     

Selectively dopedn-AlxGa1−xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors

The transport properties of warm and hot electrons in selectively dopedn-Al _x Ga_1–x As/GaAs heterostructures created by electric fields up to 500 V/cm were studied by Hall effect, conductivity, and Shubnikov-de Haas measurements at lattice temperatures from 4.2 to 300 K. Hall measurements revealed a substantial decrease of electron mobility and also of sheet electron concentration at 77 K with enhanced electric field. The accelerated 2D electrons are partly scattered into the low-mobility first excited (E ₁) subband, and they are partly trapped in immobile states located in the Al_xGa_1–xAs near the interface. Consequently, two differentv(E) characteristics were obtained at 77 K. The 2D electrons populating only the lowest (E ₀) subband exhibit a velocity of v-2×10⁷ cm/s at 500 V/cm, while the averaged velocity due to all electrons reaches a value of v-1.5×10⁷cm/s at 500 V/cm. The analysis of the Shubnikov-de Haas oscillations and Fast Fourier transformation of the data manifested that the 2D electrons are very rapidly accelerated at 4.2 K and achieve electron temperatures much higher than the lattice temperature at electric fields as low as 1 V/cm. The major cooling process for these electrons is scattering into the low-mobilityE ₁ subband.     

Vibrational properties of the F A (Li+) center in alkali halides

Abstract

The on- or off-axis behavior and the vibrational properties of the F _A (Li⁺) center are investigated in several alkali halides by means of polarized resonant Raman scattering. The observed Raman modes are interpreted and classified according to their nature and frequency. A comparison between on- and off-axis systems and between the vibrational modes of the isolated Li⁺ and the F _A (Li⁺) center reveals a displacement of the Li⁺ equilibrium position parallel to the F _A (Li⁺) defect axis and, due to the small impurity size, away from the adjacent F center.     

赝形InxGa1-xAs/In0.52Al0.48As异质结构中二维电子气的回旋共振光谱研究

采用回旋共振光谱方法，同时获得了具有较高电子气浓度的赝形In_0.80Ga_0.20As/In_0.53Ga_0.47As/In_0.52Al_0.48AsHEMT结构中最低两个子能带的费密面附近电子有效质量、 散射时间和迁移率.观察到该系统中能带非抛物性和波函数穿透所导致的电子回旋有效质量的显著增大效应，以及合金无序势和电离杂质散射所引起的电子散射时间和迁移率明显的子带依赖性. 关键词：     

Subband transitions in AlxGa1−xN /GaN/ AlxGa1−xN and AlxGa1−xN /InN/ AlxGa1−xN single quantum wells

We have calculated the spectral regime of subband transitions in Al_xGa_1−xN/GaN and Al_xGa_1−xN/InN single quantum wells. We used a simplified model to account for the internal electric fields, which modify the shape of the quantum well. Some of the parameters for these materials have not yet been firmly established. Therefore, we carried out the analysis for the extremes of the reported values of conduction band discontinuities and band gaps (in the case of InN). This analysis shows that the spectral regime of interband transitions for 1–4 nm thick wells has wavelengths above 0.5 μm for AlGaN/InN and above 0.8 μm for AlGaN/GaN and both heterostructures cover several μm wavelengths. The spectral variation with alloy composition is less pronounced in the Al_xGa_1−xN/InN single quantum wells due to the higher electric field present across the InN quantum well as compared to GaN. The results of these calculations are in good agreement with more rigorous theoretical approaches and available experimental values for Al_xGa_1−xN/GaN.     

Magnetische Monopole und Quarks

We discuss the concept of Schwinger, which starts with the hypothesis of the existence of magnetical monopoles and results in a baryon model with magnetically charged constituents. Especially we analyse the mathematical consistency of such a theory. which admits a connection between some magnetically charged “quarks” and the homogeneous Maxwell-equations ?_v*F^μv(x^u) = 0, which, displaying a lack of symmetry with respect to the inhomogeneous one, ?_vF^μv(x^u) = 4?j^μ, are replaced by ?*j^μv. Here *j^μ(x^μ) means a conserved magnetic current which provides a monopole source for the magnetic field.     

Bianchi Type V magnetized string dust cosmological models with Petrov-type degenerate

Bianchi Type V massive string cosmological models with free gravitational field of Petrov Type degenerate in the presence of magnetic field with variable magnetic permeability are investigated. The magnetic field is due to an electric current produced along the x-axis. The F ₂₃ is the only non-vanishing component of electromagnetic field tensor F _ij . Maxwell’s equations F _[ij;k] = 0 and F _;j ^ij = 0 are satisfied by F ₂₃ = constant. The behaviour of the model in the presence and absence of magnetic field and other physical aspects are also discussed.      

Trapping of a magnetic flux in granular YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7 − δ</Subscript> high-temperature superconductors under the action of an external magnetic field and transport current

Magnetic flux trapping (MFT) in granular YBa₂Cu₃O_{7 − δ} high-temperature superconductors (HTSCs) is studied. At T = 77.36 K, the dependence of the hysteresis of the transverse magnetoresistance on transport current I and the maximum value of external magnetic field H _ext is found in the measurement cycle 0 → H _ext^max → 0. The dependences of the parameters characterizing MFT, namely, residual magnetoresistance, field H _min at which the magnetoresistance is minimal, and the magnetoresistance at H _ext = H _min, on I and H _ext^maxare determined. MFT is found to occur in HTSC granules under the action of an external magnetic field exceeding the lower critical field of superconducting granules H _c1A, and the transport current only weakly affects the magnitude of MFT.     

Transmission of 18 keV negative ions Cl through nanocapillariesin Al2O3 membrane

We investigate the angular distribution of the transmitted 18keV negative ions Cl^- through Al₂O₃ nanocapillaries of 50 nm in diameter and 10 μm in length. Elastic scattering ions and inelastic scattering ions are obtained simultaneously. The experimental result is partially consistent with the guiding effect. We can qualitatively explain our experimental result through a dynamic process.     

Broad-beam laser cladding of Al-Cu alloy coating on AZ91HP magnesium alloy

The resistance to wear and corrosion of AZ91HP Mg alloy was improved by laser cladding Al-Cu alloy. It was found that the clad layer was characterized by AlCu₄ and Mg₁₇Al₁₂ grains embedded in a AlMg matrix. The bonding zone exhibited a white-light planar crystal band with thickness of 10-13 μm. The heat-affected zone formed a eutectic structure due to the Mg diffusion. The microhardness and wear resistance of the coating were improved due to the formation of the hard phases AlCu₄ and Mg₁₇Al₁₂. Owing to the formation of dense Al₂O₃ oxide film, the coating exhibited better corrosion resistance in 3.5 wt.% NaCl solution.     

Strain-induced photoreflectance spectra in the vicinity of the E 0 transition in GaAs/Si and InP/Si heterostructures

A study is reported of the structure of photoreflectance (PR) spectra in the vicinity of the E ₀ transition from thin (d=1–5 μm) n-GaAs and n-InP films (n=10¹⁶–10¹⁷ cm⁻³) grown epitaxially on Si(001) substrates. A quantitative analysis of the spectra involving multi-component fitting shows that the electronic optical transition from the {3/2;±1/2} subband provides a dominant contribution to the intermediate-field electromodulation component in both systems. The splitting observed in the GaAS/Si PR spectra near the main peak are accounted for not by the strain-induced valence-band splitting but rather by a spectral superposition of the intermediate-field component due to the {3/2;±1/2} subband with a low-energy excitonic component. The analytically established transition energy E ₀ ^3/2;±1/2 is used to calculate biaxial strains in epitaxial films. Fiz. Tverd. Tela (St. Petersburg) 41, 725–731 (April 1999)     

Lifetimes of Excited Alkalilike Atoms Colliding by Van der Waals Forces with Inert Gas Atoms in the Groundstate

The influence of Van der Waals forces on the lifetime of coherently excited hyperfine-states |F_im_Fi〉 and |F_im_Fi〉 of alkalilike atoms i by collissions with inert gas atoms j in the groundstate |F_jm_Fi〉 has been examined. To do this the timedependent Schrödinger equation has been solved on taking into account a static magnetic field, a radiation field and a Van der Waals force. Introducing an impact parameter model for the colliding atoms with small scattering angles which form a quasimolecule |μ〉 = |F_im_FiF_jm_Fi 〉 an expression for the cross section σ_μμ has been derived which determines the halfwidth Γ _μμ of the coherently excited states. On making use of the irreducible tensor representation the calculation of the cross-section has been reduced to the calculation of multipole transitions. The result has been applied e. g. to the coherently excited 3d¹⁰4p²P_3/2-states of Cu I colliding by dipole-dipole interaction with inert gas atoms He I, and Ar I in the ground state. The values agree well with data which have been derived from zero-level-crossing experiments.     

In0.53Ga0.47As/In0.52Al0.48As量子阱中双子带占据的二维电子气的输运特性

研究了不同沟道厚度的In_0.53Ga_0.47As/In_0.52Al_0.48As量子阱中双子带占据的二维电子气的输运特性.在考虑了两个子带电子之间的磁致子带间散射效应后,通过分析Shubnikov-de Haas振荡一阶微分的快速傅里叶变换结果,获得了每个子带电子的浓度、输运散射时间、量子散射时间以及子带之间的散射时间.结果表明,对于所研究的样品,第一子带电子受到的小角散射更强,这与第一子带电子受到了更强的电离杂质散射有 关键词： 二维电子气 散射时间 自洽计算