Pb（Sc1／2Nb1／2）O3中有序一无序转变和铁电相变的Raman光谱研究

采用wolframite前驱物法制备了Pb（Sc1／2Nb1／2）O3陶瓷。通过调节陶瓷烧结工艺，获得了三种具有不同B位离子有序度的PSN陶瓷。测量了三种陶瓷样品在室温至160℃范围内的Raman光谱随温度变化。结果表明，随着温度的升高，三种不同B位有序度的陶瓷样品中，Raman光谱中位于530cm^-1。的F2g模的峰位和半峰宽分别在100℃，85℃和80℃发生了突变，表明陶瓷分别在100℃，85℃和80℃三个温度点发生了铁电-顺电相变。上述结论得到了介电温度谱测量数据的支持。     

KNb_(1-x)Ti_xO_(3-δ)固溶体的合成与表征

利用高温高压法首次合成了KNb1 -xTixO3-δ(x =0～ 0 .4)系列固溶体 ,并使用X射线衍射、TG DTA、Raman谱和交流阻抗谱等对样品的结构、热稳定性和导电性进行了表征。XRD结果表明 ,随掺杂量的增加 ,晶胞体积减小 ;Ti掺杂引起了固溶体结构的转变 ,x <0 .1 5的样品为正交钙钛矿结构 ,而x≥ 0 .1 5的样品几乎为纯四方相结构。Raman谱和DTA结果显示 ,Ti掺杂使四方相区宽化 ,并且随掺杂量的增加 ,相变温度逐渐下降。阻抗谱测量表明 ,所有样品均以离子导电为主 ,其中KNb0 .85Ti0 .1 5O2 .92 5的氧离子导电率最高 ,在 80 0℃时达到 5 .6× 1 0 - 3S·cm- 1 ,在测量温度范围内 ,电导率可以拟合成两条直线 ,低温活化能小于高温活化能     

钙钛矿型氧离子导体KNb1-xMgxO3-δ的制备和表征

在高温高压 ( 4 0GPa ,870℃ )下合成了具有正交钙钛矿结构的KNb1 -xMgxO3-δ(x =0 0— 0 3 )系列固体电解质 ,并系统地研究了Mg掺杂对其结构相变和导电性的影响 .变温拉曼谱和DTA测量结果表明 ,随着温度的升高 ,KNb1 -xMgxO3-δ发生了结构相变 ,由铁电正交、四方相转变为顺电立方相 .由于Mg掺杂削弱了B位离子对自发极化的贡献以及A位离子与BO6 八面体间的耦合作用导致了居里温度下降 .其中KNb0 85Mg0 1 5O2 775的居里点大约下降 40℃ ,为 3 92℃ .阻抗谱测量表明 ,所有样品都具有离子导电特征 ,但晶界效应较强 ,电导主要由晶界决定 .通过掺杂 ,提高了样品的电导率 ,其中KNb0 9Mg0 1 O2 85的氧离子电导率最高 ,70 0℃时达到 1.2× 10 - 3S cm .     

高温无铅BaTiO_3-(Bi_(1/2)Na_(1/2))TiO_3正温度系数电阻陶瓷阻抗和介电谱分析

采用固相反应法制备了Y2O3施主掺杂的92 mol%BaTiO3-8 mol%(Bi1/2Na1/2)TiO3(BBNT8)高温无铅正温度系数电阻(positive temperature coe?cient resistivity,PTCR)陶瓷.利用透射电镜观察材料的显微结构,发现陶瓷的显微结构主要包括晶粒和晶界两部分,观察不到明显的壳层结构.进一步利用交流阻抗谱研究了陶瓷的宏观电学性能,发现陶瓷的总电阻是晶粒和晶界两部分的贡献,而晶粒电阻很小,在居里温度以上变化不大,材料的PTCR效应主要是晶界部分的贡献.当温度高于居里温度时,随着温度的升高,晶界介电常数逐渐减小,导致势垒增加,晶界电阻增大,从而产生正温度系数效应.最后,通过测试材料的介电频谱特性,研究计算了陶瓷的室温电阻率.     

(RbBi)1/2MoO4陶瓷微波介电性能的远红外反射谱研究

采用固相反应法制备了(RbBi)1/2MoO4陶瓷样品。室温下测量了(RbBi)1/2MoO4的红外反射谱,观察到15个振动模式;利用Kramers-Kronig(K-K)关系对样品的红外反射谱进行数据处理,获得材料的光频介电常数ε∞=2.17,微波频段的外推值为20.56,略小于实际测量值21.4;获得材料的本征品质因数Q×f为11 790GHz,高于实际测量值6 200GHz,说明陶瓷材料的品质因数还有较大提升空间。     

(Ta_2O_5)_(1-x)(TiO_2)_x陶瓷结构相变研究

采用固相反应技术制备了x分别为 0 0 5、0 0 8和 0 1 1的 (Ta2 O5) 1-x(TiO2 ) x 陶瓷 ;在室温至 6 0 0℃范围内 ,测量了这些陶瓷样品的拉曼光谱随温度的变化。随着温度的升高 ,拉曼光谱中位于 35～38cm- 1的最低频移的声子模发生软化 ,并随之发生结构相变。拉曼光谱和实验结果都表明 :组分x分别为0 0 5、0 0 8和 0 1 1的 (Ta2 O5) 1-x(TiO2 ) x 陶瓷分别在 36 0、4 5 0和 5 4 0℃发生了由三斜至单斜相的结构相变。上述结论得到了 (Ta2 O5) 0 92 (TiO2 ) 0 0 8单晶热膨胀系数测量数据的支持。     

二氧化碲(TeO2)晶体的Raman光谱研究

利用激光显微高温Raman光谱仪 ,测定了TeO2 晶体的常温Raman光谱及高温熔体法生长TeO2 晶体固 液边界层的高温Raman光谱。通过分析 ,指认了TeO2 晶体的常温Raman谱图 2 0 0～ 80 0cm- 1 谱峰的振动模式 ,解析了高温Raman谱图各谱峰的展宽、频移 ,提出了熔体可能的结构基团 ,从而为研究功能性晶体材料生长机理提供了一定依据。     

2-三苯基锗基乙基苯基酮、4-三氯锗基-4-甲基-2-戊酮及其类似物Raman及IR光谱

我们合成有机锗化合物的重要中间体 4-三氯锗基 - 4-甲基 - 2 -戊酮 ( A)、3-三氯锗基 -3,5,5-三甲基环己酮 ( B)、2 -三氯锗基 - 2 -苯基乙基苯基酮 ( C)、2 -三苯基锗基乙基苯基酮 ( D) ,测量了他们的 Raman和 IR光谱并进行了讨论。在化合物 A- D的 Raman和 IR光谱 ,苯环中的 C- H伸缩振动 ,饱和 C- H伸缩振动 ,饱和 Ge- C伸缩振动等特征数据基本一致。C=O伸缩振动在 Raman和 IR光谱中位置基本一致 ,但在红外光谱中均为强吸收带 ,而在 Raman光谱中的峰强度差别则非常大 ,化合物 A、D的峰非常弱 ,而 C的峰则很强 ,化合物 A- C的 Ge- Cl振动均在 390 cm- 1附近出现强峰。     

浸渍法制备Al2O3：Ni2+及其EPR研究

使用浸渍法制备了Al2O3：Ni2+晶体,并对不同温度400°C-1000°C焙烧的7种样品进行了分析,采用日本岛津电子公司生产的JES-FA200电子顺磁共振谱仪测试了样品的电子顺磁共振谱,分析了EPR信号对应的离子归属,对今后使用电子顺磁共振研究Al2O3：Ni2+提供了借鉴参考依据.     

Al2O3-Y2O3-ZrO2三相复合陶瓷的介电谱研究

采用传统的固相反应法,在1400–1500 ℃下烧结,制备得到Al₂O₃-Y₂O₃-ZrO₂三相复合陶瓷.样品的结构、形貌和电性能分别用X射线衍射(XRD)、扫描电子显微镜(SEM)及介电谱表征.XRD表明此三相复合体系无其他杂相,加入Y₂O₃及ZrO₂后使得Al₂O₃成瓷温度降低;SEM表明此体系晶粒直径为200–500 nm,并且样品随烧结温度的升高而变得更加致密,晶界更加清晰;介电损耗谱中出现峰值弛豫现象,根据Cole-Cole复阻抗谱得出其为非德拜弛豫. 关键词： 2O₃-Y₂O₃-ZrO₂三相陶瓷')" href="#">Al₂O₃-Y₂O₃-ZrO₂三相陶瓷 介电弛豫 阻抗谱 热导率     

Perovskite Pb(Sc1/2Nb1/2)O3 nanopowders synthesized by surfactant-modulated precipitation

A novel surfactant-modulated precipitation method is proposed to produce pure perovskite Pb(Sc_1/2Nb_1/2)O₃ (PSN) nanopowders at a low temperature of 700 °C. The samples were characterized by XRD, SEM, TEM, and HRTEM, respectively. The results indicate that the powders exhibit a granular shape of 80 nm in diameter. It is believed that the nanosize of as-prepared PSN powders is dependent on the well-dispersed performance, which arouse from the combined effects of both precipitant TMAH and surfactant CTAB. The mechanism of the formation of the pure perovskite PSN nanopowders is discussed in detail. Our method is expected to create a new, low-cost route to produce the promising nanopowders of multi-component perovskite systems.     

Origin of the relaxor state in Pb(B{x}B{1-x}{'})O(3) perovskites

Molecular dynamics simulations of first-principles-based effective Hamiltonians for Pb(Sc{1/2}Nb{1/2})O(3) under hydrostatic pressure and for Pb(Mg{1/3}Nb{2/3})O(3) at ambient pressure show clear evidence of a relaxor state in both systems. The Burns temperature is identified as the temperature below which dynamic nanoscale polar clusters form, pinned to regions of quenched chemical short-range order. The effect of pressure in Pb(Sc{1/2}Nb{1/2})O(3) demonstrates that the stability of the relaxor state depends on a delicate balance between the energetics that stabilize normal ferroelectricity and the average strength of random local fields which promote the relaxor state.     

Successive phase transitions in the highly ordered complex perovskite PbLu1/2Nb1/2O3

The structural phase transitions and the electrical behaviour of the complex perovskite PbLu_1/2Nb_1/2O₃ have been investigated using X-ray powder diffraction, dielectric constant measurements, differential scanning calorimetry and measurement of the polarisation as a function of applied electric field. The high-temperature paraelectric phase is highly ordered. A first-order paraelectric-antiferroelectric phase transition occurs at 270°C and an antiferroelectric-ferroelectric phase transition, characterised by dispersion in the curves of dielectric constant as a function of temperature, occurs at ≈ 30°C. The antiferroelectric phase is isostructural with the orthorhombic form of PbYb1/₂Nb1/₂O₃. The low-temperature ferroelectric phase also has an orthorhombic crystal structure.     

Strong visible‐light photovoltaic effect in multiferroic Pb(Fe1/2V1/2)O3 bulk ceramics

The multiferroic Pb(Fe_1/2V_1/2)O₃ (PFV) bulk ceramic was fabricated by a conventional ceramic sintering method. The strong visible‐light photovoltaic effect in Sn‐doped‐In₂O₃(ITO)/PFV/ITO structure capacitor was observed. The open‐circuit voltage was up to ～0.7 V, which was much higher than the value (～0.3 V) in BiFeO₃ film. The photo‐excited electric current is almost proportional to the incident light illumination intensity. The good visible‐light photovoltaic makes PFV ceramic a potential candidate for practical application in solar cell devices.

     

Wide band gap and p‐type conductive Cu–Nb–O films

Cu–Nb–O films with a thickness of ca. 150 nm were prepared on borosilicate glass substrates using CuNbO₃ ceramic target at substrate temperature of 500 °C by pulsed laser deposition. The X‐ray diffraction patterns showed that the Cu–Nb–O films were amorphous or an aggregation of fine crystals. The post‐annealed film at 300 °C in N₂ gas showed 80% transmission in visible light (band gap = 2.6 eV) and high p‐type conductivity of 21 S cm^–1. The Cu–Nb–O film with a thickness of 100 nm, fabricated from the target with a composition of Cu/Nb = 0.9, showed the highest p‐type conductivity of 116 S cm^–1. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Control of the degree of long-range compositional order in ceramics of the compound perovskites Pb(B′1/2B″1/2)O3 using recrystallization

It is established that an ordered state forms in Pb(Yb_1/2Nb_1/2)O₃ at fairly low temperatures (650–800°C). Subsequent high-temperature heat treatment of the ceramic without additives (sintering or additional annealing) does not produce any significant change in the degree of long-range compositional order s because of the low diffusion rate of the Yb and Nb ions. The addition of Li₂CO₃, which forms a liquid phase, creates conditions for the dissolution of grains with a high value of s, the nucleation of new crystallization centers, and the growth of grains with a new equilibrium value of s at the sintering (annealing) temperature. Zh. Tekh. Fiz. 69, 24–30 (March 1999)     

Induced Phase Transition in PbMg1/3Nb2/3O3–xPb(Zr0.53Ti0.47)O3 Transparent Ceramics

Physics of the Solid State - Time dependences of permittivity and optical transmission in the Pb(Mg1/3Nb2/3)O3–xPb(Zr0.53Ti0.47)O3 (x = 16, 23, and 33%) transparent ferroelectric ceramics are...     

Specific-heat anomaly caused by ferroelectric nanoregions in Pb(Mg(1/3)Nb(2/3))O3 and Pb(Mg(1/3)Ta(2/3))O3 relaxors

The specific heat of typical relaxors, Pb(Mg(1/3)Nb(2/3))O3 (PMN) and Pb(Mg(1/3)Ta(2/3))O3 (PMT), was measured by adiabatic and relaxation methods between 2 and 420 K. A broad anomaly was found in the specific heat curve over the wide temperature range between 150 and 500 K for PMN, and between 50 and 400 K for PMT, which provides evidence for the formation of ferroelectric nanoregions (FNR) in the paraelectric matrix. The entropy of the anomaly was estimated as 3.3 J K(-1) mol(-1) and 2.9 J K(-1) mol(-1) for PMN and PMT, respectively, which implies an order-disorder-type mechanism for the formation of FNR.     

Ionic conductivity of double sodium-scandium and cesium-zirconium molybdates

The electrical properties of the Na₃Sc(MoO₄)₃ and Cs₂Zr(MoO₄)₃ compounds are investigated using impedance spectroscopy (1–10⁶ Hz) in the temperature range 100–650°C. Double molybdates in the form of a fine-crystalline powder are obtained by solid-phase synthesis in air at 450–600°C for 20–50 h. It is found that the temperature dependence of the ionic conductivity of ceramic samples exhibits anomalies at temperatures of 605 ± 5°C for Na₃Sc(MoO₄)₃ and 425 ± 15°C for Cs₂Zr(MoO₄)₃ due to the phase transitions, which are confirmed by the data of thermal analysis. Above the superionic transitions, the ionic conductivity reaches 0.084 S/cm (650°C) for Na₃Sc(MoO₄)₃ and 0.002 S/cm (462°C) for Cs₂Zr(MoO₄)₃.