Investigation of Absorption Spectra of(Cr~(4 ),Yb~(3 )):YAG Crystal

1lntroductionThsaturableabsotherswhichhavebeensucceSSfullyusedforpassiveQswitched1asersincludedye['],Lffi:F2colDcenterCrytals['],Cr -doPedcrysds['~'],etc.Amngthem,Cr -doPedCryStalsdevtheedinrecentyearssuchasCr :YAG,Cr :GSGG,andCr :WeSnyandsoon,havetheadVanageSofgoodphoto-chedcalandthermalstabillty,largabsorptbocross-section,besaturableintensityandhighdaInaethreshod.Inaddition,Cr canbedoPedintOgainmediumtoformselfQ-switchedl..,['J.Cr -dopedcrystalsbecomethemostprotalsingsatIJrable…     

YAG晶体中Cr4+和Yb3+的光谱和荧光特性研究

报道了（Ｃｒ＾４＋,Ｙｂ＾３＋）：ＹＡＧ晶体的吸收光谱和荧光光谱特性。在室温下,（Ｃｒ＾４＋,Ｙｂ＾３＋）：ＹＡＧ晶体在９３７ｎｍ和９６８ｎｍ处存在两个吸收带,能与ＩｎＧａＡｓ激光二级管有效耦合：而且在１０３０ｎｍ处有一Ｃｒ＾４＋吸收峰,可以实现对Ｙｂ＾３＋的自调Ｑ激光输出。（Ｃｒ＾＋,Ｙｂ＾３＋）：ＹＡＧ 荧光光谱与Ｙｂ＾３＋：ＹＡＧ晶体一样,发光中心也是位于１０２９ｎｍ,但其强度比Ｙｂ＾３＋：     

Study of the effects of Cr ions on Yb in Cr,Yb:YAG crystal

The absorption and fluorescence spectra of Cr,Yb:YAG crystal were measured. There are two absorption bands at 940 nm and 968 nm although the absorption coefficient is lower than that of the absorption peak of Yb:YAG superimposed in Cr:YAG absorption peak. The emission peak intensity is 4 times lower than that of Yb:YAG, which may be caused by the existence of the ground state absorption of Cr⁴⁺ which quenches the Yb³⁺ emission intensity. Although the emission peak of Cr,Yb:YAG is lower than that of Yb:YAG, there is an advantage of this crystal which combines the saturable absorber and gain medium into one and can be a self-Q switching laser crystal if Cr,Yb:YAG crystal is pumped with high energy power.     

Investigation of the Emission Cross-sections and the Spectra of (Cr~(4 ), Yb~(3 ) ): YAG Crystal

l introductionIn recent years, Cr4 --doped crystals have attracted a great deal of attention aspassive Q--,wit,h.,[l~4]. These Cr4 --dOPed crystals include Cr4 : YAG[l'21 ) Cr4 :GSGG[s], Cr4 : YSO['] etc. They have a large absorption cross section and lOwsaturable intensity at the laser wavelength. In comparison with previously usedsaturable absorbers such as dyes['] and LiF: FZ-- [6] cOlor center crystals, Cr4 -dopedcrystals are more photO--chemically and thermally stable and h…     

Investigation of the Emission Cross-sections and the Spectra of (Cr4+, Yb3+): YAG Crystal

The emission and the lifetime data of Cr, Yb: YAG and Yb: YAG were reported. The effective peak stimulated-emission cross section of chromium and ytterbium-co-doped yttrium-aluminum garnets (Cr, Yb: YAG) has been determined to be 8.98 × 10-20 cm2 at room temperature. The luminescence spectrum of Cr, Yb: YAG is the same as that of Yb: YAG. The luminescence lifetime of Cr, Yb: YAG at room temperature is 0.3 ms (Yb: YAG, 1.48 ms ). The causes of the differences in the fluorescence spectra and the stimulated emission cross-section between Yb: YAG and Cr, Yb: YAG crystals were discussed. Also the potential of Cr, Yb: YAG as a self Q- switched laser crystal was discussed.     

LD端面泵浦腔内倍频Yb:YAG绿光激光器

报道了一种激光二极管(LD)端面泵浦10at%掺杂Yb:YAG激光晶体(4×4×1mm)和Ⅰ类临界相位匹配LBO的腔内倍频全固态绿光激光器.为了克服"绿光问题",采用了两个激光二极管偏振耦合系统.在双路泵浦功率为1.2W时,获得最高功率为40mW525nm的连续基模激光输出.在腔内插入Cr4+:YAG饱和吸收体被动调Q,在泵浦功率为1.2W时,可以获得平均功率为5.2mW,脉冲重复频率为2.44kHz,脉冲宽度为51.5ns,峰值功率为41.7W的515nm脉冲激光输出.输出波长发生变化,而且515nm脉冲激光输出的阈值仅为728mW.     

Laser-diode pumped self-Q-switched microchip lasers

Optical properties of Cr,Yb:YAG, Cr,Nd:YAG crystals, and composite Yb:YAG/Cr:YAG ceramics self-Q-switched solid-state laser materials are presented. The merits of these self-Q-switched laser materials are given and the potentials of such lasers can be chosen by the applications. Cr,Yb:YAG and composite Yb:YAG/Cr:YAG ceramics self-Q-switched laser are conducted. Although several tens of kW peak power can be obtained with a monolithic microchip Cr,Yb:YAG laser, the experimental results show that the performance of this laser is limited by the absorption of Cr⁴⁺ ions at a pump wavelength of 940 nm and strong fluorescence quenching at high Cr concentration. Composite Yb:YAG/Cr:YAG ceramics are more suitable to realize high pulse energy and peak power (up to MW level) with optimized lasing and Q-switching parts. In addition, the instabilities induced by the multi-longitudinal mode competition in Cr,Nd:YAG and Cr,Yb:YAG microchip lasers are addressed. The different gain bandwidths of Yb:YAG and Nd:YAG play an important role in the instability of the output laser pulse trains. Stable laser pulses from the Cr,Yb:YAG microchip laser were obtained due to the antiphase dynamics. For the Cr,Nd:YAG microchip laser, the instability caused by the multi-longitudinal mode competition is an intrinsic property. Different transverse patterns were observed in Cr,Nd:YAG microchip lasers when a pump beam with larger diameter was used. Saturated inversion population distribution inside the gain medium plays an important role in the transverse pattern formation. Different transverse patterns were reconstructed by combining different sets of the Hermite-Gaussian modes.     

Comparison of spectroscopic properties of Yb:YAP and Yb:YAG crystals

The Yb:YAG and Yb:YAP crystals have been grown by Czochralski method. The absorption spectra and the fluorescence spectra of Yb:YAG and Yb:YAP crystals have been investigated. It is shown that the Yb:YAG crystal has better laser properties and smaller threshold power than Yb:YAP crystal. In addition, the absorption cross-section of the Yb:YAP crystal is 2.16 times of that of the Yb:YAG crystal,so laser diode pumped Yb:YAG lasing can be easily realized. Because YAP single crystal is anisotropic, it is provided with polarization characteristics.     

LD端面泵浦腔内倍频Yb∶YAG绿光激光器

报道了一种激光二极管（LD）端面泵浦10at％掺杂Yb∶YAG激光晶体（4×4×1 mm）和Ⅰ类临界相位匹配LBO的腔内倍频全固态绿光激光器.为了克服“绿光问题”,采用了两个激光二极管偏振耦合系统.在双路泵浦功率为1.2 W时,获得最高功率为40 mW 525 nm的连续基模激光输出.在腔内插入Cr4＋:YAG饱和吸收体被动调Q,在泵浦功率为1.2 W时,可以获得平均功率为5.2 mW,脉冲重复频率为2.44 kHz,脉冲宽度为51.5 ns,峰值功率为41.7 W的515 nm脉冲激光输出.输出波长发生变化,而且515 nm脉冲激光输出的阈值仅为728 mW.     

钛宝石泵浦的Yb:YAG晶体的激光性能

测量了Yb:YAG晶体的光谱特性,用Ar⁺离子泵浦钛宝石激光器作为泵浦源泵浦Yb:YAG晶体,采用平平腔设计,当输出耦合镜T_1.053μm=4.26%,泵浦功率为1410mW时,得到320mW1.053μm的高效CW激光输出,斜率效率为54%,外推阈值功率为203mW。     

A passively Q-switched diode pumped Yb:YAG microchip laser

A passively Q-switched diode pumped Yb:YAG microchip laser with Cr4+:YAG saturable absorber mirror is reported. The TEMoo laser pulses are obtained with 1,7-uJ pulse energy, 15-ns pulse width, 0.11-kW peak power, and a repetition rate of 2.2 kHz at 1049 nm. The doped concentration and dimension of Yb:YAG microchip crystal are 10 at.-% and 5×0.6 mm2, respectively.     

LD side-pumped passively Q-switched Yb:YAG slab laser

A quasi-continuous wave laser diode side-pumped passively Q-switched Yb:YAG slab laser with Cr⁴⁺:YAG saturable absorber has been demonstrated in order to understand the pulse properties of Yb:YAG crystal. To our knowledge the maximum 69% extraction efficiency is achieved by the system. 44 μJ pulse energy and 1.64 KW peak power with near diffraction-limited beam quality are presented at 25 Hz repetition rate. The build-up time of the Q-giant in the passively Q-switched laser is shown.     

Theoretical and experimental investigations of quasi-continuous wave diode array side-pumped Yb＇YAG slab laser

An analytical model of quasi-continuous wave (quasi-CW) diode array side-pumped slab laser for Yb:YAG oscillator in long-pulse free-running has been developed based on the CW model. In this model we first introduce a new parameter, pump pulse width, and make the model available for use in the quasi-CW model. We also give an analytical equation of laser delay time to calculate the laser pulse width. A detailed model is also presented for a new structure laser design, taking account of the geometry of Yb:YAG slab. A quasi-CW diode array side-pumped Yb:YAG slab laser is investigated theoretically and experimentally. Experiments yield a quasi-CW output energy up to 20.36 mJ with the laser pulse width of 654.55 μs at 1049 nm when the diode arrays operate at 25 Hz and 1 ms pulse width. The crystal dimensions are 3 mm×8 mm×1 mm and the doping density is 10 at.%. The experimental results are in good agreement with the predictions of the theoretical model.     

LD end-pumped intracavity frequency doubled Yb:YAG laser

A laser diode end-pumped 10 at.% doped Yb:YAG microchip crystal intracavity frequency doubled all solid-stated green laser is reported in this paper. Using one plano-concave resonator, with the pump power of 1.2 W, 44.2 mW TEM₀₀ continuous wave (CW) laser at 525 nm was obtained, the optical conversion efficiency was about 3.7%. When a Cr:YAG crystal with initial transmission of 95.5% inserted in the resonator, the maximum output power of 6.4 mW, pulse duration width of 49.1 ns, pulse repetition rate of 2.45 kHz, and peak power of 53.1 W at 515 nm were achieved when the pump power was 1.2 W. The wavelength changed from 525 nm to 515 nm and the threshold was only 725 mW.     

Efficient CW Yb:YAG laser at 1048 nm under 968 nm diode laser pumping

We describe the output performances of the 1048 nm transition in Yb:YAG under in-band pumping with diode laser at the 968 nm wavelength. An end-pumped Yb:YAG crystal yielded 787 mW of continuous-wave (CW) output power for 9.1 W of absorbed pump power. Furthermore, 104 mW 524 nm green light was acquired by frequency doubling. Comparative results obtained for the pump with diode laser at 940 nm are given in order to prove the advantages of the in-band pumping.     

熔盐法生长Nd:KGW多波长激光晶体结构及光谱性能的研究

采用熔盐法,以K2W2O7为助溶剂,优化了晶体生长的工艺参数,生长出了新型稀土激光晶体Nd∶KGW。采用XRD及X射线荧光分析,确认了所得到的晶体为β Nd∶KGW晶体。通过TG DTA分析和测量,得到了其熔点及相变温度分别为1086℃和1021℃。利用红外光谱和Raman光谱确定了其分子基团的振动归属。通过测量其吸收光谱,该晶体在波长为808nm处有强吸收峰,可以与激光二极管有效地耦合。通过计算,获得了其峰值吸收截面积。测试了该晶体的荧光光谱,所得到的晶体发射波长为1.06μm和1.35μm。     

激光二极管端面抽运的棒状Yb：YAG激光器

分析了影响激光二极管抽运Yb：YAG激光器调Q效率的参量，推导了激光二极管端面脉冲抽运Yb：YAG晶体的速率方程，解出了双程抽运情况下的净抽运量子产率。利用数值计算方法，模拟了净抽运量子产率与晶体长度，抽运光脉冲宽度等关系，得出晶体长度的优化可以提高Yb：YAG激光器输出效率。计算了词Q Yb：YAG激光器的最大增益、最大储能，分析了放大自发辐射对于Yb：YAG能量存储的影响。同时给出了激光二极管端面抽运调Q Yb：YAG优化设计方法。这些分析和计算为实际器件的研制提供参考。     

Annealing effect on Cr,Yb:YAG laser crystal

The absorption spectra, fluorescence spectra, and lifetimes of as-grown and annealed Cr,Yb:YAG crystal grown by Czochralski technique have been measured. The broad absorption bands in the visible region increase in intensity and shift to long wavelength after annealing, and the additional absorption around 482 nm may be possibly due to new octahedral Cr4+ center in the crystal, and the increase in the infrared (IR) region is due to the increase of Cra+. The increase of Cr4+ also results in the groud state absorption and the concentration quenching of Ybs+ in Cr,Yb:YAG crystal after annealing, the fluorescence intensity is reduced to 75% and the emission lifetime is shortened from 1.40 to 0.44 ms.     

Growth and optical properties of a new self-Q-switched laser crystal: Cr:Yb3Al5O12

Cr⁴⁺:YbAG (Cr⁴⁺:Yb₃Al₅O₁₂) crystal with a size up to Φ24 mm×30 mm was grown by the Czochralski method. In the absorption spectrum, there are two absorption bands at 939 and 969 nm, respectively, which are suitable for InGaAs diode laser pumping, and there is an absorption band at 1030 nm, which is suitable for passive Q-switched laser output at 1.03 μm. A broad emission spectrum from 970 to 1100 nm was exhibited from 940 nm wavelength pumping. This crystal is promising as a self-Q-switched laser crystal used for compact, efficient, highly stable, passive self-Q-switched thin chip solid-state lasers.     

Crystal growth, spectral and laser properties of Yb3+:NaGd(WO4)2 crystal

Yb³⁺-doped NaGd(WO₄)₂ (Yb:NGW) crystal has been successfully grown by Czochralski method. The rocking curves from (400) plane of as-grown Yb:NGW crystal was measured and the full-width values at half-maximum was 21″. The polarized absorption spectra, the fluorescence spectra and the fluorescence decay lifetime of Yb:NGW crystal were measured at room temperature. The spectroscopic parameters of Yb:NGW crystal are calculated and compared, with those of Yb:YAG crystal. A continuous wave output power of 3.01 W at 1048 nm was obtained with a slope efficiency of 71% by use of diode pumping.