整齐排列的氧化锌纳米针阵列的场发射性能

采用简单的热蒸发方法,不使用任何催化剂,在硅基底上制备出了两种垂直于基底、整齐排列的氧化锌纳米针阵列.它们具有均匀的分布以及一致的取向和高度.场发射性能研究表明它们同时具有较低的开启和阈值场强,稳定的发射电流和长时间维持发射的能力.较低的开启和阈值场强来源于它们较高的长径比和较细的尖端;稳定发射电流和长时间维持发射的能力来源于它们在基底上均匀一致的分布以及由于较粗的根部带来的与基底的良好接触.实验结果表明整齐的氧化锌针状纳米结构阵列是一种理想的平面场发射材料. 关键词： 氧化锌 热蒸发 阵列场发射 屏蔽效应     

基于图形化生长纳米氧化锌场致发射阴极阵列的研究

采用光刻技术在覆盖有氧化锌(ZnO)薄膜的ITO玻璃片衬底上实现图形化生长,结合水热法在衬底上制备出结构完整、排列一致的ZnO矩形和圆环型单元阵列。在图形化的基础上二次生长ZnO纳米锥阵列,锥长度最大可达到10μm,远大于一次生长的长度,并且发现锥顶有很多精细的类似针状的纳米量级微细结构。分析了非图形化、图形化一次以及图形化二次生长的ZnO纳米锥阵列的场致发射性能。使用图形化二次生长的ZnO纳米锥阴极阵列制作了12.7cm(5inch)的场发射显示器(FED),能实现全屏发光。实验结果表明,图形化二次生长的ZnO纳米锥阵列发射电流密度为最大,可达0.6mA/cm2,其开启场强为2.5V/μm。图形化生长ZnO纳米锥的方法是一种能较好改善材料场发射性能的好方法,为寻求良好场发射性能材料的制备提供了一条有效的实验途径。     

氧化锌纳米线的紫外光耦合增强场电子发射特性

本文采用热化学气相沉积方法制备氧化锌纳米线阵列, 研究氧化锌纳米线阵列在紫外光辐照下的场电子发射特性. 实验结果表明, 在紫外光辐照下, 氧化锌纳米线场发射开启电压降低, 发射电流明显增大. 机理分析认为, 氧化锌纳米线紫外光增强的场发射源自场电子发射与半导体耦合作用, 紫外光激发价带电子跃迁到导带和缺陷能级使发射电子数量增加, 同时, 光生电子发射降低了发射材料表面的有效功函数, 从而显著增强场电子发射性能. 氧化锌纳米线具有紫外光耦合增强场电子发射特性, 在光传感、冷阴极平板显示和场发射电子源等方面具有潜在的应用价值.     

一维有序ZnO纳米棒阵列的制备与表征

通过改进传统水热法的密闭、高压的条件,在非密闭、常压环境下在氧化铟锡玻璃衬底上自组装生长了取向高度一致并且分散性好的ZnO纳米棒阵列.首先将乙酸锌溶胶旋涂到氧化铟锡玻璃衬底上,经热处理得到致密的ZnO纳米晶薄膜,然后将其垂直放入前驱体溶液中通过化学溶液沉积生长得到ZnO纳米棒阵列.室温条件下,对样品进行了SEM和XRD的测试.表明生成的氧化锌纳米棒阵列沿c轴取向,实现了定向生长,且纳米棒结晶较好,为六方纤锌矿结构,直径约为40 nm,长度达到微米量级.室温下的吸收光谱表明,由此方法得到的纳米棒纯度较高,有强的紫外吸收.室温下,观测到了该有序ZnO纳米棒阵列在387 nm处强的窄带紫外发射,半高宽小于30 nm,在468 nm处还有一强度较弱的蓝光发射峰.     

ZnO纳米棒的低温溶液法制备、光电特性研究及其在有机/无机复合电致发光中的应用

利用水热法制备了垂直于衬底的定向生长的ZnO纳米棒,利用扫描电子显微镜及光致发光的方法对其形貌及光学特性进行了表征,利用场发射性能测试装置对ZnO纳米棒的场发射性能进行了测试.结果表明:利用水热法在较低的温度(95 ℃) 下生长了具有较好形貌和结构的ZnO纳米棒,并表现出了较好的场发射特性,当电流密度为1 μA/cm²时,开启电场是2.8 V/μm,当电场为6.4 V/μm时,电流密度可以达到0.67 mA/cm²,场增强因子为3360.稳定性测试表明,在5 h内,4.5 V/μm的电场下,其波动不超过25%.将制备的ZnO纳米棒应用到有机/无机电致发光中,其中ZnO纳米棒为电子传输层,m-MTDATA(4,4',4″-tris{N,(3-methylphenyl)-N-phenylamino}-triphenylamine) 为空穴传输层,得到了ZnO的342 nm的紫外电致发光,此发光较ZnO纳米棒光致发光的紫外发射有约40 nm的蓝移. 关键词： ZnO纳米棒 场发射 水热法 有机/无机复合电致发光     

取向和非取向In2O3纳米线的场发射研究

用自制的设备制备了取向和无取向氧化铟纳米线,并研究了In2O3纳米线的场发射性质,发现取向纳米线比非取向纳米线有着更好的场发射特性.取向纳米线的开启和阈值场强明显低于非取向纳米线,这可能是由于取向纳米线之间的场屏蔽效应较弱以及取向纳米线有较多的顶部发射端的缘故.     

利用胶体小球掩蔽刻蚀技术制备的半导体纳米阵列的场电子发射特性

利用胶体小球掩蔽刻蚀技术,制备了单晶硅纳米阵列,利用原子力显微镜观察了硅阵列的表面形貌,实验结果表明,硅柱阵列具有高密度和较好的均匀性。同时研究了单晶硅纳米阵列的场电子发射特性。为了提高样品的场发射性能,在所制备的单晶硅有序纳米阵列上生长了一层非晶碳薄膜。与单晶纳米硅柱阵列相比,覆盖有非晶碳膜的样品的场电子发射特性有了明显的改善,表现在场发射的开启电场下降,同时场发射增强因子得到增加。结果表明非晶碳膜确实能够降低电子发射的表面有效势垒,从而增强了场电子发射特性。     

生长温度对纳米氧化锌场发射性能的影响

采用锌粉和银粉为蒸发源,用热蒸发法不同温度下制备了四针状纳米氧化锌,并以单独的锌粉做对照。采用扫描电子显微镜(SEM)观察其形貌,X射线衍射(XRD)谱表征其晶体结构。采用丝网印刷方法将其制备为场致电子发射阴极,将阴极与印刷有荧光粉的阳极板组装成二极结构场致发射显示屏,并进行了场致电子发射特性对比实验。结果表明较高温度制备的氧化锌具有较好的场致发射性能;掺杂银粉的蒸发源制备的样品的发射性能明显优于没有掺杂银粉的样品。实验证明ZnO是一种优良的场致发射冷阴极材料,在真空电子方面具有广阔的应用前景。     

纳米金刚石掺混纳米氧化锌的场发射特性

利用水热法制备了菊花状的氧化锌纳米棒,并进行表征,将纳米氧化锌掺入纳米金刚石中配制成电泳液,超声分散后电泳沉积到钛衬底上,再经热处理后进行场发射特性的测试.结果表明:未掺混的金刚石阴极样品的开启电场为7.3V/μm,在20V/μm的电场下,场发射电流密度为81μA/cm2;掺混后阴极样品的场发射开启电场降低到4.7~6.0V/μm,在20V/μm电场下,场发射电流密度提高到140~158μA/cm2.原因是纳米ZnO掺入后,增强了涂层的电子输运能力、增加了有效发射体数目,提高了场增强因子β,而金刚石保证了热处理后涂层与衬底的良好键合,形成了欧姆接触,降低了场发射电流的热效应.场发射电流的稳定性随掺混ZnO量的增加而下降,要兼顾场发射电流密度及其稳定性,适量掺入ZnO可有效提高纳米金刚石的场发射性能.     

取向和非取向In2O3纳米线的场发射研究

用自制的设备制备了取向和无取向氧化铟纳米线，并研究了In₂O₃纳米线的场发射性质，发现取向纳米线比非取向纳米线有着更好的场发射特性.取向纳米线的开启和阈值场强明显低于非取向纳米线，这可能是由于取向纳米线之间的场屏蔽效应较弱以及取向纳米线有较多的顶部发射端的缘故. 关键词： 场发射 纳米线 取向 非取向     

Fabrication of needle-like ZnO nanorods arrays by a low-temperature seed-layer growth approach in solution

Uniform, large-scale, and well-aligned needle-like ZnO nanorods with good photoluminescence and photocatalysis properties on Zn substrates, have been successfully fabricated using a simple low-temperature seed-layer growth approach in solution (50 °C). The formation of ZnO seed-layer by the anodic oxidation technique (AOT) plays an important role in the subsequent growth of highly oriented ZnO nanorods arrays. Temperature also proved to be a significant factor in the growth of ZnO nanorods and had a great effect on their optical properties. X-ray diffraction (XRD) analysis, selected-area electron diffraction (SAED) pattern and high-resolution TEM (HRTEM) indicated that the needle-like ZnO nanorods were single crystal in nature and that they had grown up preferentially along the [0001] direction. The well-aligned ZnO nanorods arrays on Zn substrates exhibited strong UV emission at around 380 nm at room temperature. To investigate their potential as photocatalysts, degradation of pentachlorophenol (PCP) in aqueous solution was carried out using photocatalytic processes, with comparison to direct photolysis. After 1 h, the degradation efficiencies of PCP by direct photolysis and photocatalytic processes achieved 57% and 76% under given experimental conditions, respectively. This improved degradation efficiency of PCP illustrates that ZnO nanorods arrays on Zn substrates have good photocatalytic activity. This simple low-temperature seed-layer growth approach in solution resulted in the development of an effective and low-cost fabrication process for high-quality ZnO nanorods arrays with good optical and photocatalytic properties that can be applicable in many fields such as photocatalysis, photovoltaic cells, luminescent sensors, and photoconductive sensors. PACS 81.07.Bc; 81.10.Dn; 81.15.Pq; 82.50.Hp; 85.60.Jb     

Boundary layer-assisted chemical bath deposition of well-aligned ZnO rods on Si by a one-step method

ZnO seed layers and well-aligned ZnO single-crystalline micro/nanorods were synthesized on bare Si in one step without the assistance of catalysts by chemical bath deposition. Scanning electron microscopy (SEM) images and X-ray diffraction patterns show that the alignment of ZnO rods on Si(100) could be adjusted by varying the substrates’ angles of incline, the reaction temperature, and the precursor concentration. Transmission electron microscopy cross-sectional images demonstrate that a polycrystalline seed layer with (0002) preferred orientation was formed between the well-aligned rods and Si substrate placed vertically while a randomly oriented layer was formed between the randomly aligned rods and Si substrate placed horizontally. The formation of seed layers and alignment of as-synthesized ZnO rods were attributed to the assistance of boundary layers in a chemical bath deposition system.     

The effect of Al doping on the morphology and optical property of ZnO nanostructures prepared by hydrothermal process

The undoped and Al-doped ZnO nanostructures were fabricated on the ITO substrates pre-coated with ZnO seed layers using the hydrothermal method. The undoped well-aligned ZnO nanorods were synthesized. When introducing the Al dopant, ZnO shows various morphologies. The morphology of ZnO changes from aligned nanorods, tilted nanorods, nanotubes/nanorods to the nanosheets when the Al doping concentrations increase. The ZnO nanostructures were characterized by X-ray diffraction, field emission scanning electron microscopy, X-ray photoelectron spectroscopy, photoluminescence and Raman technology. The Al doping concentrations play an important role on the morphology and optical properties of ZnO nanostructures. The possible growth mechanism of the ZnO nanostructures was discussed.     

Controllable growth of well-aligned ZnO nanorod arrays by low-temperature wet chemical bath deposition method

Well-aligned ZnO nanorod arrays were synthesized by low-temperature wet chemical bath deposition (CBD) method on Si substrate under different conditions. Results illustrated that dense ZnO nanorods with hexagonal wurtzite structure were vertically well-aligned and uniformly distributed on the substrate. The effects of precursor concentration, growth temperature and time on nanorods morphology were investigated systematically. The mechanism for the effect of preparation parameters was elucidated based on the chemical process of CBD and basic nucleation theory. It is demonstrated that the controllable growth of well-aligned ZnO nanorods can be realized by readily adjusting the preparation parameters. Strong near-band edge ultraviolet (UV) emission were observed in room temperature photoluminescence (PL) spectra for the samples prepared under optimized parameters, yet the usually observed defect related deep level emissions were nearly undetectable, indicating high optical quality ZnO nanorod arrays could be achieved via this easy process chemical approach at low temperature.     

Field electron emission improvement of ZnO nanorod arrays after Ar plasma treatment

Vertically well-aligned single crystal ZnO nanorod arrays were synthesized and enhanced field electron emission was achieved after radio-frequency (rf) Ar plasma treatment. With Ar plasma treatment for 30 min, flat tops of the as-grown ZnO nanorods have been etched into sharp tips without damaging ZnO nanorod geometrical morphologies and crystallinity. After the Ar ion bombardment, the emission current density increases from 2 to 20 μA cm⁻² at 9.0 V μm⁻¹ with a decrease in turn-on voltage from 7.1 to 4.8 V μm⁻¹ at a current density of 1 μA cm⁻², which demonstrates that the field emission of the as-grown ZnO nanorods has been efficiently enhanced. The scanning electron microscopy (SEM) results, in conjunction with the results of transmission electron microscopy (TEM), Raman spectroscopy and photoluminescence observation, are used to investigate the mechanisms of the field emission enhancement. It is believed that the enhancements can be mainly attributed to the sharpening of rod tops, and the decrease of electrostatic screening effect.     

Lasing with guided modes in ZnO nanorods and nanowires

A vertically arranged nearly parallel array of ZnO nanorods and randomly oriented nanowires has been grown by low pressure chemical vapor deposition (CVD) on silica substrates and on stainless steel gauze woven from a wire with a diameter of 40 μm, respectively. The quality of the produced material is high enough to act as a gain medium for stimulated emission in the ultraviolet spectral region. Multiple sharp lasing peaks were realized from single hexagonal nanorods and arrays of hexagonal ZnO nanorods. The lasing peaks display successive onset and saturation with increasing excitation power density and fit well the expected resonance spectrum of guided modes in hexagonal nanorods. The behavior of lasing spectra from shot to shot of pumping in randomly oriented nanowires along with the independence of the lasing threshold on the excitation spot area suggest that the emission spectrum results from the superposition of lasing modes in individual nanowires, rather than from random lasing due to photon coherent scattering.     

Self-catalyst synthesis of aligned ZnO nanorods by pulsed laser deposition

High-density well-aligned ZnO nanorods were successfully synthesized on ZnO-buffer-layer coated indium phosphide (InP) (100) substrates by a pulsed laser deposition (PLD) method. Scanning electron microscopy images show that the ZnO buffer layer formed uniform drip-like structure and ZnO nanorods were well-oriented perpendicular to the substrate surface. The sharp diffraction peak observed at 34.46° in X-ray diffraction scanning pattern suggests that the ZnO nanorods exhibit a (002)-preferred orientation. The PL spectra of ZnO samples shows a strong near band edge emission centered at about 380 nm and a weak deep level emission centered at around 495 nm, and it demonstrates that the ZnO nanorods produced in this work have high optical quality, which sheds light on further applications for nanodevices. Supported by the National Natural Science Foundation of China (Grant No. 50532080), the Science & Technology Foundation for Key Laboratory of Liaoning Province (Grant No. 20060131), and the Doctoral Project by China Ministry of Education (Grant No. 20070141038)     

Observation of quantum confinement in ZnO nanorods fabricated using a two-temperature growth method

We observed a quantum confinement effect in vertically well-aligned ultrafine ZnO nanorods using polarized excitation photoluminescence measurements. Room-temperature and low-temperature photoluminescence spectra revealed that free excitons were confined in the nanorods. The magnitude of the energy shift due to the quantum confinement in the ultrafine ZnO nanorods was 6 meV at room temperature, which corresponded to the luminescence from ZnO nanorods 12.8 nm in diameter. The diameter estimated from the spectra was comparable to the value measured from SEM images.     

Fabrication and strain investigation of ZnO nanorods on Si composing sol–gel and chemical bath deposition method

High density vertically aligned ZnO nanorods arrays were prepared on Si substrate by the simple and facile sol–gel and chemical bath deposition combination technology. ZnO nanorods, preferentially oriented along the c-axis, were of the hexagonal wurzite structure. The lattice constants of ZnO nanorods a was shrunken by about 0.004 nm, which can result in about 1.29% mismatch between ZnO nanorods and Si substrate. The Raman spectrum was also analyzed in detail, and the result indicates that the stress between ZnO nanorods and Si substrate was about 0.227 GPa, which can be ascribed to the stress relaxation effect of the ZnO nanorods. The room temperature photoluminescence (PL) measurement result has shown a main deep level emission. The forming mechanism for ZnO nanorods was further analyzed.     

A template-free sol-gel technique for controlled growth of ZnO nanorod arrays

The growth of ZnO nanorod arrays via a template-free sol-gel process was investigated. The nanorod is single-crystalline wurtzite structure with [0 0 0 1] growth direction determined by the transmission electron microscope. The aligned ZnO arrays were obtained directly on the glass substrates by adjusting the temperatures and the withdrawal speeds, without seed-layer or template assistant. A thicker oriented ZnO nanorod arrays was obtained at proper experimental conditions by adding dip-coating layers. Room temperature photoluminescence spectrum exhibits an intensive UV emission with a weak broad green emission as well as a blue double-peak emission located at 451 and 468 nm, respectively. Further investigation results show that the difference in the alignment of nanorods ascribes to the different orientations of the nanoparticles-packed film formed prior to nanorods on the substrate. Well ordered ZnO nanorods are formed from this film with good c-axis orientation. Our study is expected to pave a way for direct growth of oriented nanorods by low-cost solution approaches.