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Direct visualization of the structural defects in two-dimensional (2D) semiconductors at a large scale plays a significant role in understanding their electrical/optical/magnetic properties, but is challenging. Although traditional atomic resolution imaging techniques, such as transmission electron microscopy and scanning tunneling microscopy, can directly image the structural defects, they provide only local-scale information and require complex setups. Here, we develop a simple, non-invasive wet etching method to directly visualize the structural defects in 2D semiconductors at a large scale, including both point defects and grain boundaries. Utilizing this method, we extract successfully the defects density in several different types of monolayer molybdenum disulfide samples, providing key insights into the device functions. Furthermore, the etching method we developed is anisotropic and tunable, opening up opportunities to obtain exotic edge states on demand. 相似文献
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The recent development of synthesis processes to assemble graphene sheets into porous three-dimensional (3D)macroscopic structures are reviewed, including our efforts on 3D graphene structures. Mechanisms for building 3D graphene architectures and their composite materials are also summarized. The functional systems based on 3D graphene architectures provide a significant enhancement in the efficacy due to their unique structures and properties. 相似文献
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在简单的金属/金属氧化物/金属三明治结构中,研究发现施加电压能够改变器件的电阻,而且这种改变是持久的且是可逆的。 相似文献
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Synthesis of nitrogen-doped single-walled carbon nanotubes and monitoring of doping by Raman spectroscopy 下载免费PDF全文
Nitrogen-doped single-walled carbon nanotubes (CNx-SWNTs) with tunable dopant concentrations were synthesized by chemical vapor deposition (CVD), and their structure and elemental composition were characterized by using transmission electron microscopy (TEM) in combination with electron energy loss spectroscopy (EELS). By comparing the Raman spectra of pristine and doped nanotubes, we observed the doping-induced Raman G band phonon stiffening and 2D band phonon softening, both of which reflect doping-induced renormalization of the electron and phonon energies in the nan- otubes and behave as expected in accord with the n-type doping effect. On the basis of first principles calculations of the distribution of delocalized carrier density in both the pristine and doped nanotubes, we show how the n-type doping occurs when nitrogen heteroatoms are substitutionally incorporated into the honeycomb tube-shell carbon lattice. 相似文献
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可控地构造具有一定功能的表面人工低维结构,并且总结、理解体系微观结构对其宏观性质影响的一般规律,不仅对探索低维基本物理以及其中的新奇量子现象至关重要,更是微电子工业保持持续发展的关键前提.这方面的研究包括发展新的生长技术实现对体系形成过程的精确控制,对获得的材料做高分辨率的表征;从理论上则要理解体系的生长过程,阐明热力学、动力学的作用机理,从而指导制备技术的发展.深入研究表面人工低维结构的性质更可能导致新物理现象与原理的发现,产生全新的器件概念,进一步反馈给体系功能的设计,推动基础研究与应用探索的发展.文章简要介绍了表面物理国家重点实验室近年来在表面人工低维结构的功能设计与构造方面的研究成果. 相似文献
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本文采用热化学气相沉积方法制备氧化锌纳米线阵列, 研究氧化锌纳米线阵列在紫外光辐照下的场电子发射特性. 实验结果表明, 在紫外光辐照下, 氧化锌纳米线场发射开启电压降低, 发射电流明显增大. 机理分析认为, 氧化锌纳米线紫外光增强的场发射源自场电子发射与半导体耦合作用, 紫外光激发价带电子跃迁到导带和缺陷能级使发射电子数量增加, 同时, 光生电子发射降低了发射材料表面的有效功函数, 从而显著增强场电子发射性能. 氧化锌纳米线具有紫外光耦合增强场电子发射特性, 在光传感、冷阴极平板显示和场发射电子源等方面具有潜在的应用价值. 相似文献
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以纯锌粉作为原料,用气相输运法在650℃合成了ZnO双晶纳米梳结构,并用高分辨透射电镜 及选区电子衍射等方法对其微观结构进行了研究.结果表明双晶纳米梳两侧的齿针呈一定角 度以孪晶方式对称生长,其孪晶面为(1 1-3),两侧齿针都垂直于孪晶界,其直径均匀分布 在50—100nm,每一侧梳背和齿针的生长方向均分别为〈0 1-1 0〉和〈0 0 0 1〉.由于孪晶 造成了晶体取向的变化,基于镜像对称的特征,ZnO双晶纳米梳两侧梳背的外缘可以均为Zn 终结的(0 0 0 1)面,因此都可以发生自催化作用并形成分支结构,这种纳米结构的生长过 程与王中林等人提出的极性生长机理相符合.
关键词:
氧化锌
纳米梳
双晶
极性生长 相似文献
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