钛碳化物改性碳纳米管的场发射性能

通过在碳纳米管(CNTs)表面沉积钛薄膜并经过高温真空退火处理,在CNTs表面形成了低功函数的钛碳化物.研究了钛碳化物改性CNTs的场发射性能,并利用X射线光电子能谱(XPS)对改性碳管进行了结构表征.实验结果表明,高温真空退火可使沉积在CNTs表面的钛原子与碳原子发生化学反应生成钛碳化物;经钛碳化物改性处理的CNTs的场发射性能明显改善,开启电场由改性前的121降低到104V/μm,当电场强度为234V/μm时,场发射电流密度由改性前的23增大到改性后的13.5mA/cm²,同时,CNTs的表面抗离子轰击能力增强,发射稳定性改善.对钛碳化物改性增强CNTs薄膜场发射性能的机理进行了分析. 关键词： 碳纳米管 钛碳化物 场发射 结构表征     

多壁碳纳米管/聚丙烯复合材料热导率研究

用Pt细丝代替已有3ω方法中的薄膜热线,并设计了基于Labview程序的虚拟测量系统,准确、方便地测量了聚丙烯复合材料的热导率. 测量结果发现,多壁碳纳米管/丁苯橡胶/聚丙烯三元复合材料的热导率随着多壁碳纳米管/丁苯橡胶粉末含量的增加变化不大;多壁碳纳米管/聚丙烯复合材料的热导率随着多壁碳纳米管含量增加而增大;复合材料热导率远小于简单混合规则预测的结果,而与有效介质理论符合很好. 关键词： ω法')" href="#">3ω法 多壁碳纳米管 聚丙烯复合材料 热导率     

排列形状及阵列数目对纳米导线阵列场发射性能的影响

为了进一步研究纳米导线阵列的排列形状以及阵列数目对其场发射行为的影响，利用镜像悬浮球模型对正方形以及六边形排列的纳米导线阵列的场发射行为进行计算与模拟，近似的得到纳米导线阵列的场发射增强因子满足如下的变化趋势：β=h/ρ(1/1+W)+1/2(1/1+W)²+3,其中h为纳米导线的高度，ρ为纳米导线的半径，W是以R为自变量的函数，R为纳米导线阵列的间距.结果显示纳米导线阵列的排列形状对其场发射性能的影响较小，而阵列间距则是影响场发射性能的关键因素：当R<R₀时，场发射增强因子随着阵列间距的减小而急剧减小；当R>R₀时，场发射增强因子基本不变，其中R₀为导线阵列场发射的最佳间距.进一步研究表明改变纳米导线阵列的数目基本不会改变阵列的场发射性能随间距的变化趋势，但是随着阵列数目的增加，R₀会有一定程度的减小，场发射增强因子也会降低. 关键词： 纳米导线 场发射 增强因子 阵列数目     

栅极调制纳米线的场增强因子计算

利用悬浮球模型和镜像电荷法计算了栅极调制纳米线的顶端表面电场,给出了场发射增强因子表达式β=1/2（3.5+L/r₀+W）,式中L与r₀分别是纳米线长度与顶端表面曲率半径,W是由栅孔半径R、阴极与栅极间距d以及纳米线自身几何参数所决定的函数．结果表明,纳米线长径比对场增强因子的影响很显著;当阴极与栅极间距较近时,场增强因子随d的增加而减小 关键词： 栅极调制纳米线 场增强因子 悬浮球     

LPCVD法制备碳纳米管薄膜及其场发射性能的研究

采用低压化学气相沉积法(LPCVD)在镍片上直接制备碳纳米管(CNTs)薄膜,系统地研究了生长温度(500~800℃)对碳纳米管薄膜形貌、结构及场发射性能的影响,并对此方法的生长机理进行了分析。当温度从500℃升高到650℃时,碳纳米管的生长速率随着温度升高而增大,而温度继续上升,速率则明显减小。利用扫描电镜(SEM)和拉曼光谱仪表征和检测了碳纳米管薄膜的形貌和结构。碳纳米管的管径、长度、一致性和晶化程度随温度都有明显的变化。同时还对碳纳米管薄膜的场发射特性进行了测试,对其场发射机理进行了深入地探讨,表明温度对碳纳米管的性能有很大影响,并存在最优化的温度条件。实验结果表明碳纳米管薄膜的形貌、结构及其场发射性能可通过生长温度进行一定范围的控制。     

多晶薄膜表面粗化与生长方式转变

采用原子力显微镜研究了磁控溅射多晶薄膜表面粗化行为对归一化沉积温度T_s/T_m(T_s是沉积温度，T_m是材料熔点)的依赖性与薄膜生长方式转变行为.随着T_s/T_m增加，薄膜表面粗糙度增加，而表征粗糙度随时间演化特征的生长指数β历经了先减小再增加的过程.β对T_s/T_m的依赖关系反映了薄膜生长方式的转变行为，即薄膜生长依次由随机生长方式向表面扩散驱动生长方式与异常标度行为生长方式转变.在低于体扩散控制薄膜生长的温度时，晶界扩散机理导致多晶薄膜的表面粗化的异常标度行为. 关键词： 多晶薄膜 表面粗化 温度 生长     

椭圆偏振技术研究VHF-PECVD高速沉积微晶硅薄膜的异常标度行为

采用VHF-PECVD技术高速沉积了不同生长阶段的微晶硅薄膜,通过椭圆偏振技术研究了生长过程中微晶硅薄膜表面粗糙度的演化.实验结果表明,沉积气压P_g=300 Pa时,β=0.81,其超出标度理论中β最大值为0.5范围,出现异常标度行为.这表明微晶硅薄膜高速生长中还存在其他粗糙化增加的因素,此粗糙化增加的因素与阴影作用有关. 关键词： 微晶硅薄膜 椭偏光谱法 生长机制 表面粗糙度     

170keV质子辐照对多壁碳纳米管薄膜微观结构与导电性能的影响

碳纳米管具有优异的导电性, 是未来电子元器件的理想候选材料, 应用前景广阔. 针对碳纳米管在空间电子元器件的应用需求, 本文研究了170 keV质子辐照对多壁碳纳米管薄膜微观结构与导电性能的影响. 采用扫描电子显微镜(SEM)、拉曼光谱仪(Raman)、X射线光电子能谱仪(XPS)及电子顺磁共振谱仪(EPR)对辐照前后碳纳米管试样的表面形貌和微观结构进行分析; 利用四探针测试仪对碳纳米管薄膜进行导电性能分析. SEM分析表明, 170 keV质子辐照条件下, 当辐照注量高于5×10¹⁵ p/cm² (protons/cm²)时, 碳纳米管薄膜表面变得粗糙疏松, 纳米管发生明显弯曲、收缩及相互缠结现象. 目前, 质子辐照纳米管发生的收缩现象被首次发现. 基于Raman和XPS分析表明, 170 keV质子辐照后碳纳米管的有序结构得到改善, 且随辐照注量增加, 碳纳米管的有序结构改善明显. 结构的改善主要是由于170 keV质子辐照碳纳米管所产生的位移效应导致缺陷重组. EPR分析表明, 随着辐照注量的增加, 碳纳米管薄膜内的非局域化电子减少. 利用四探针测试分析表明, 碳纳米管薄膜的导电性能变差, 这是由于170 keV质子辐照导致碳纳米管薄膜中的电子特性及形态发生改变. 本文研究结果有助于利用质子辐照对碳纳米管膜结构和性能进行调整, 从而制备出抗辐射的纳米电子器件.     

交叉色关联噪声驱动的单模激光系统统计性质研究

采用交叉色关联的加性色噪声和乘性色噪声驱动的单模激光立方模型,通过诺维科夫理论和福克斯近似以及斯特拉托诺维奇近似,得到反映激光统计性质的强度关联函数C的表达式;研究关联时间τ、净增益系数a₀和交叉关联强度λ对强度关联函数C的影响.数值模拟发现,在阈值以上（a₀>0）时,关联函数C随关联时间τ的增大而增大;在阈值以下（a₀<0）时,关联函数C随关联时间τ的增大而减小.无论在阈值以上还是阈值以下,关联函数C均随交叉关联强度λ的增大而减小.在C-a₀曲线上存在单峰. 关键词： 单模激光 交叉关联 强度涨落 强度关联函数     

含氮氟化类金刚石(FN-DLC)薄膜的研究：(Ⅲ)疏水性能分析

不同沉积条件下，在单晶硅基底上沉积了含氮氟化类金刚石(FN-DLC)薄膜，用静滴接触角/表面张力测量仪测量了水与FN-DLC膜表面的接触角.用X射线光电子能谱、Raman光谱和傅里叶变换吸收红外光谱(FTIR)分析了薄膜的组分和结构.用原子力显微镜观测了薄膜的表面形貌.结果表明，FN-DLC薄膜疏水性能主要取决于薄膜表面的化学结构、薄膜表面极化强度的强弱、以及薄膜的表面粗糙度的大小.sp³/sp²的比值减小，CF₂基团含量增加，薄膜粗糙度增加，接触角增大；反之，则接触角减小.在工艺上，沉积温度和功率的减小，气体流量比r(r=CF4/［CF₄+CH₄］)的增加，都会使水的浸润性变差，接触角增大. 关键词： 氟化类金刚石膜 疏水性 接触角     

Effect of sputtered Cu film’s diffusion barrier on the growth and field emission properties of carbon nanotubes by chemical vapor deposition

Growth of carbon nanotube (CNT) films with good field emission properties on glass is very important for low cost field emission display (FED) applications. In addition to Ni, Co and Fe, Cu can be a good catalyst for CNT growth on glass, but due to diffusion into SiO₂ it is difficult to control the CNTs density and uniformity. In this paper, four metal barrier layers (W, Ni, Cr, Ti) were deposited by dc magnetron sputtering on glass to reduce the Cu diffusion. As-grown CNT films showed various morphologies with the use of different barrier metals. CNTs with uniform distribution and better crystallinity can be synthesized only on Ti/Cu and W/Cu. Voltage current measurements indicate that better field emission properties of CNT films can be obtained on titanium and tungsten barriered Cu, while chromium and nickel are not suitable barrier candidates for copper in CNT-FED applications because of the reduced emission performance. PACS 81.05.Uw; 61.46.Fg; 85.45.Db; 66.30.-h     

Laser surface treatment of screen-printed carbon nanotube emitters for enhanced field emission

This paper investigates the surface treatment of screen-printed carbon nanotube (CNT) emitters using a 248 nm (KrF) excimer laser. The field emission characteristics of the CNT emitters are measured following irradiation using laser fluences ranging from 80 to 400 mJ/cm². The results show that the turn-on electric field, the current density, and the distribution of the emission sites are highly dependent on the value of the laser fluence and are optimized at a fluence of 150 mJ/cm². Two distinct laser fluence regimes are identified. In the low fluence regime, i.e. 80-150 mJ/cm², the surface treatment process is dominated by a photo ablation mechanism, which results in the gradual removal of the binding material from the cathode surface and leads to an improvement in the emission characteristics of the CNT cathodes with an increasing fluence. However, in the high fluence regime, i.e. 150-400 mJ/cm², the thermal ablation mechanism dominates; resulting in a removal of the CNTs from the cathode surface and a subsequent degradation in the emission characteristics.     

An improved planar-gate triode with CNTs field emitters by electrophoretic deposition

An improved planar-gate triode with carbon nanotubes (CNTs) field emitters has been successfully fabricated by conventional photolithography, screen printing and electrophoretic deposition (EPD). In this structure, cathode electrodes and ITO arrays linked with gate electrodes were interdigitated and paralleled on the same plane although the gate electrodes and cathode electrodes were isolated by dielectric layer, a so-called improved planar-gate triode structure. An electrophoretic process was developed to selectively deposit CNTs field emitters onto cathode electrodes in the CNTs suspension by an applied voltage between the gate electrodes and cathode electrodes. The optical microscopy and FESEM image showed that the CNTs emitters with the uniform packing density were selectively defined onto the cathode electrodes. In addition, field emission characteristics of an improved planar-gate triode with CNTs field emitters were investigated. The experiment results indicated that the turn-on voltage of this triode structure at current density of 1 μA/cm² was approximately 55 V. The anode current and gate current came to 396 μA and 325 μA, at gate voltage and anode voltage of 100 V and 4000 V, respectively and at the anode-cathode spacing of 2000 μm. The emission image became brighter and the luminous image with dot matrix on the anode plate obviously increased with the increase of the gate voltage. Moreover, the emission current fluctuation was smaller than 5% for 11 h, which indicated that the improved planar-gate triode has a good field emission performance and long lifetime.     

Improving the field-emission properties of carbon nanotubes by magnetically controlled nickel-electroplating treatment

A novel magnetically controlled Ni-plating method has been developed to improve the field-emission properties of carbon nanotubes (CNTs). The effect of the magnetic field and Ni-electroplating on CNT field-emission properties was investigated, and the results are demonstrated using scanning electron microscopy, J-E and the duration test. After treatment, the turn-on electric field declines from 1.55 to 0.91 V/μm at an emission current density of 100 μA/cm², and the emission current density increases from 0.011 to 0.34 mA/cm² at an electric field of 1.0 V/μm. Both the brightness and uniformity of the CNT emission performance are improved after treatment.     

Titanium buffer layer for improved field emission of CNT based cold cathode

Carbon nanotube (CNT) based cold cathodes are considered to be the most promising material for fabrication of next generation high-performance flat panel displays and vacuum microelectronic devices. Adhesion of CNTs with the substrate and the contact resistance between them are two of the important issues to be addressed in CNT based field emission (FE) devices. Here in this work, a buffer layer of titanium (Ti) is deposited prior to the catalyst deposition and the growth was carried out using chemical vapor deposition (CVD) technique. There was significant increase in emission current density from 10 mA/cm² to 30 mA/cm² at the field of 4 V/μm by the use of titanium buffer layer due to much less dense growth of CNTs of smaller diameter. Field emission results suggest that the adhesion of the CNTs to the substrate has improved. The titanium buffer layer has also lowered the contact resistance between the CNTs and the substrate because of which a stable emission of 30 mA for a longer duration was obtained.     

Carbon nanotube field emission cathodes fabricated with chemical displacement plating

A new approach for making field emission cathodes consisting of carbon nanotubes (CNTs) is discussed. The authors used a chemical displacement technique to fabricate field emission cathodes by co-depositing CNTs/nickel composite onto the surface of a zinc-coated soda-lime glass. There are several advantages of this displacement method for preparing field emission cathodes such as the uniform distribution of CNTs in the composite cathodes, low cost of consumed CNTs, low cost of instrument and equipment, feasibility of large-area mass production, and stability of plating solution, which can be used for many times and still remain useful after a long-time storage. The results show that, after the CNT purification and dispersion processes, a CNT content of 1.0 g/L, a pH value of 7.0, and a temperature of 50 ± 3 °C are the optimal process conditions which give better CNT distribution in the CNTs/Ni composite emitter and better field emission performance. The CNTs/Ni composite deposited with a plating solution which has been used for tens of times has an emission effect similar to those deposited with a new solution.     

Improved emission uniformity and stability of printed carbon nanotubes in electrolyte

In this paper, we studied the effect of NaCl electrolyte as a surface treatment on improving the uniformity and stability of field emission of screen-printed carbon nanotubes (CNTs). A short period of the electrolyte treatment of CNT films remarkably increase emission uniformity and stability. Furthermore, the field emission characteristics of screen-printed carbon nanotubes (CNTs) such as low turn-on field, high emission current density and strong adhesion of the CNT film on the substrate were also reinforced after post-treated. SEM, TEM and Raman spectrum study revealed that uniformity and stability of field emission is enhanced by two factors. Firstly, the electrolyte treatment appeared to render the CNT surfaces more actively by exposing more CNTs form the CNT paste, which dominates initial uniformity and stability of field emission. Secondly, the number of opened CNTs and defects CNTs of CNT film were increased by electrical current energy.     

A novel approach to improve the field emission characteristics of printed CNT films

A novel post-treatment method, including hard hairbrush and electrical treatment, is performed intentionally to improve the field emission capability and stability of screen-printed carbon nanotubes （CNTs）. Compared with untreated films, the field emission properties of the treated ones are greatly enhanced. Scanning electron microscopy （SEM） and Raman spectrum studies reveal that field emission properties are enhanced by two factors. Firstly, the improved field emission properties of CNT films can be attributed to the more active CNT surface by removing the organic material cover on the CNTs. Secondly, the gener- ation of a high density of structural defects and the lower resistance contact to the topside CNT emitters after treatment are all helpful to improving the field emission properties of the treated CNTs.     

Effect of micro and nanoparticle inorganic fillers on the field emission characteristics of photosensitive carbon nanotube pastes

We successfully fabricated field emitter arrays of carbon nanotube (CNT) dots of 10 μm diameter with excellent field emission properties by using photosensitive CNT paste. The CNT paste was investigated in terms of morphologies, current-voltage properties, and luminous uniformities by varying the mixing ratios of micro and nanoparticle inorganic fillers and the amount of CNTs added into the paste. The 3:1 mixing of micro and nanoparticle fillers and the addition of 5% CNTs in the paste brought about the best field emission characteristics of dot-patterned CNT field emitter arrays.