Gam Pn和Gam P-n团簇结构及其光电子能谱的理论研究

采用密度泛函理论中B3LYP泛函方法,在6-31 G*水平上,对GamPn(m+n≤5)团簇及其阴离子的几何构型和振动光谱性质进行了研究.在相同水平下计算了GamP-n(m+n≤5)的垂直电离能和GamPn(m+n≤5)的绝热电子亲核势.结果表明:单线态稳定结构有较高的对称性,二重态的稳定结构对称性相对较低.     

第一性原理对GanPm小团簇的结构及稳定性的研究

利用密度泛函理论（DFT）对Ga_nP和Ga_nP₂ (n=1—7)团 簇的几何结构、电子态及稳定 性进行了研究. 在B3LYP/6-31G^*水平上进行了结构优化和频率分析，得到了Ga _nP和Ga_nP₂(n=1—7) 团簇的基态结构. 结果表明，n≤ 5团簇的几何结构基本上为平面结构，n ＞ 5的团簇均为立体结构；在Ga_nP₂ (n=1—6)团簇中，P-P比Ga-P容易 成键；在Ga_nP和G a_nP₂ (n=1—7) 团簇中，Ga₃P, Ga₄P, Ga P₂, Ga₂P₂ 和 Ga₄P₂的基态结构最稳定，在所研究的团簇中，稳定性随团簇总原 子数的增大而减小. 关键词： nP_m团簇')" href="#">Ga_nP_m团簇 密度泛函理论（DFT） 几何结构 电子态     

PdnPbm(n+m≤5)混合团簇的结构与光谱性质

在相对论有效原子实势(RECP)近似下，用密度泛函中的B3LYP/LANL2DZ方法，对纯Pb_n(n=2—5)团簇、Pd_nPb_m(n+m≤5)混合团簇的各种可能几何构型进行全优化计算，得到它们的基态结构和光谱性质；从结构和振动光谱两个方面分析了其形成规律；最后计算了团簇的能级分布和最高占据轨道(HOMO)与最低空轨道(LUMO)之间的能级间隙(HLG)，分析了团簇的化学活性. 关键词： 团簇 有效原子实势 密度泛函     

密度泛函理论研究Hg与Auqn(n=1—6, q=0,+1,-1) 团簇的相互作用

采用密度泛函理论中的广义梯度近似对Hg与小团簇Au ^q_n (n=1—6, q=0, +1, -1)的相互作用进行了系统研究. 结果表明,除Au₅^+,-团簇外,前线分子轨道理论可以成功预测大部分Au _n Hg ^q 复合物的最低能量结构. Au_n团簇对Hg的吸附受团簇尺寸大小和团簇所携带电荷的影 关键词： 密度泛函理论 汞 金团簇 吸附能     

GanN－m阴离子团簇的结构及稳定性的研究

利用密度泛函理论(DFT)对Ga_nN^-(n=2—8)和Ga_nN^-₂ (n=1—7)阴离子团簇的结构及稳定性进行了研究.在B3LYP/6-31G^*水平上进行了结构优化和频率分析，得到了Ga_nN^-(n=2—8)和Ga_nN^-₂(n=1—7)阴离子团簇的基态结构.在这些团簇中，原子总数小于等于6的团簇的几何结构为平面结构，原子总数大于6的团簇的几何结构为立体结构；在所研究的团簇中，Ga₄N^-，Ga₆N^-,Ga₄N^-₂和Ga₅N^-₂的基态结构较稳定. 关键词： nN^-_m团簇')" href="#">Ga_nN^-_m团簇 密度泛函理论(DFT) 几何结构     

WnNim(n+m=8)团簇结构与电子性质的理论研究

采用密度泛函理论(DFT)中的B3LYP方法,在Lanl2dz基组水平上对W_nNi_m(n+m=8)团簇的各种可能构型进行了几何参数全优化,得到了它们的基态构型;并对基态构型的平均结合能、Wiberg键级(WBI)、磁学性质、NBO进行了分析,结果表明:团簇随着W原子数的增多,稳定性增强,n≥5时,结构中都含有纯钨团簇的结构基元;W-W键级高于W-Ni键和Ni-Ni键;W₅Ni₃,W₆Ni₂团簇发生了"磁矩猝灭"的现象;在W,Ni原子内部,轨道电荷发生了转移,产生了"轨道杂化"现象,W,Ni原子之间也发生了电荷转移形成了较强的化学键. 关键词： nNi_m(n+m=8)团簇')" href="#">W_nNi_m(n+m=8)团簇 几何结构 电子性质 密度泛函理论     

MgmBn(m=1,2;n=1—4)团簇结构与性质的密度泛函理论研究

用密度泛函理论(DFT)的杂化密度泛函B3LYP方法在6-31G基组水平上对Mg_mB_n(m=1,2;n=1-4)团簇各种可能的构型进行几何结构优化，预测了各团簇的最稳定结构.并对最稳定结构的振动特性、电离势、成键特性、极化率和超极化率等性质进行了理论研究.结果表明，团簇的最稳定结构大多是平面结构，团簇的稳定结构中通常是几个呈负电性的B原子形成一个负电中心，而其他B原子和Mg原子通常处在端位，且显正电性；团簇中通常是B-B键和B-Mg键共存，极少出现Mg-Mg键， 关键词： mB_n(m=1')" href="#">Mg_mB_n(m=1 n=1-4)团簇 密度泛函理论 结构与性质     

SimCn （m+n≤7）团簇的密度泛函研究

使用密度泛函理论（DFT）的杂化密度泛函B3LYP方法在6-31G*基组水平上对Si_mC_n（m+n≤7）团簇各种可能的构型进行几何结构优化,预测了各团簇的最稳定结构. 并对最稳定结构的平均结合能（E_b）,二阶能量差分（Δ₂E）和能隙（E_g）等进行了理论研究. 结果表明,随着原子个数的增加,SiC二元团 关键词： mC_n （m+n≤7）团簇')" href="#">Si_mC_n （m+n≤7）团簇 密度泛函理论 结构与性质     

［Mg(NH2)2］n(n=1—5)团簇的密度泛函理论研究

用密度泛函理论的杂化密度泛函B3LYP方法在6-31G^*基组水平上对［Mg(NH₂)₂］_n(n=1—5)团簇各种可能的构型进行几何结构优化,预测了各团簇的最稳定结构.对最稳定结构的振动特性、成键特性、电荷特性等进行了理论研究.结果表明：团簇易形成链状结构,Mg—N键长为0.190—0.234 nm,N—H键长为0.101—0.103 nm,H—N—H键角为100.2°—107.5°;团簇中M 关键词： 2)₂］_n(n=1—5)团簇')" href="#">［Mg(NH₂)₂］_n(n=1—5)团簇 密度泛函理论 结构与性质 储氢材料     

FeBN(N≤6)团簇的结构与磁性

利用密度泛函理论中的广义梯度近似(GGA)，在考虑自旋多重度后，预测了FeB_N(N≤6)团簇的基态结构.结果表明基态团簇的自旋多重度分别为4，3，2，1，2和1，其中FeB₄团簇比较稳定.同时对FeB_N(N≤6)基态团簇的磁性做了系统地研究，发现除了FeB₅团簇外，FeB_N(N≤6)团簇的总磁矩和Fe原子磁矩随团簇尺寸的增大而减小. 关键词： N团簇')" href="#">FeB_N团簇 自旋多重度 磁矩     

平面结构Ga5N5团簇电子结构的第一性原理计算研究=

用基于密度泛函理论的第一性原理、全电子、从头算法研究了Ga5N5团簇的一个奇异的稳定平面结构，给出其电子结构、电子亲和势、电离能和结合能。计算结果显示Ga5N5团簇的该平面结构是稳定的，没有自旋磁矩。计算发现在团簇的N3基团中的结合在一起的三个氮原子间有大的电荷转移，尽管没有自由的N3分子能存在。这也许对Ga5N5团簇的具有最低基态能量的该平面结构的稳定性是重要的。     

WnNim(n+m=8)团簇的极性和光谱性质的理论研究

采用密度泛函理论(DFT)中的B3LYP方法,在LANL2DZ基组水平上对WnNim(n+m=8)团簇的各种可能构型进行了几何参数全优化,得到了它们的基态构型;并对基态构型的偶极距、极化率、红外光谱和拉曼光谱性质进行了分析,结果表明:团簇WnNim(n+m=8)都具有极性,富W团簇非线性光学效应强,容易被外加场极化;振动频率主要分布在0-350 cm-1范围内,团簇W4Ni4因其振动方式的特殊性,红外光谱和拉曼光谱在频率421.971 cm-1处,都有明显强峰;团簇W5Ni3因其结构的高对称性在振动光谱中出现多处共振现象.     

DFT study on the structure and spectra of GasP5 cluster

In this paper, possible structures of GasP5 cluster were optimized by using density functional method with generalized gradient correction （B3LYP）. The electronic structure of the isomers with lower energy was studied. The most stable structure obtained for GasP5 is a distorted pentaprism. The Ga-P bond formed in the cluster is strongly ionic. Based on NBO analysis, an average value of 0.59 electron transfers from Gallium to Phosphorus. The bond length 2.33-2.43 is around the value in bulk GaP. The HOMO-LUMO gap is about 2.2 eV. The dipole moment and polarizability are calculated, and the IR and Raman spectra are also presented.     

0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP1-y buffers

Single-junction,lattice-mismatched In0.69Ga0.31As thermophotovoltaic(TPV) devices each with a bandgap of 0.6 eV are grown on InP substrate by metal-organic chemical vapour deposition(MOCVD).Compositionally undulating stepgraded InAsyP1-y buffer layers with a lattice mismatch of ～1.2% are used to mitigate the effect of lattice mismatch between the device layers and the InP substrate.With an optimized buffer thickness,the In0.69Ga0.31As active layers grown on the buffer display a high crystal quality with no measurable tetragonal distortion.High-performance single-junction devices are demonstrated,with an open-circuit voltage of 0.215 V and a photovoltaic conversion efficiency of 6.9% at a short-circuit current density of 47.6 mA/cm2,which are measured under the standard solar simulator of air mass 1.5-global(AM 1.5 G).     

Geometries, stabilities and electronic properties of small Nb-doped gallium clusters: A density functional theory study

The host Ga_n+1 and doped Ga_nNb (n=1-9) clusters with several spin configurations have been systematically investigated by a relativistic density functional theory (DFT) with the generalized gradient approximation. The optimized equilibrium geometries tend to prefer the close-packed configurations for small Nb-doped gallium clusters up to n=9. The average binding energies per atom (E_b/atom), second-order differences of total energies (Δ₂E), fragmentation energies (E_f) and HOMO-LUMO gaps of Ga_n+1 and Ga_nNb (n=1-9) clusters are studied. The results indicate the doping of Nb atom in gallium clusters improves the chemical activities. In particular, the clusters with sizes of Ga₄Nb and Ga₇Nb are found to be more stable with respect to their respective neighbors. Our calculated vertical ionization potentials (VIPs) exhibit an obvious oscillating behavior with the cluster size increasing, except for Ga₃ and Ga₄Nb, suggesting the Ga₃, Ga₅, Ga₇, GaNb, Ga₃Nb, Ga₆Nb and Ga₈Nb clusters corresponding to the high VIPs. In the case of vertical electron affinities (VEAs) and chemical hardness η, VEAs are slightly increasing whereas chemical hardness η decreasing as Ga_nNb cluster size increases. Besides, the doping of Nb atom also brings the decrease as the cluster sizes increases for atomic spin magnetic moments (μ_b).     

Spin-polarised DFT study of cobalt-doped gallium clusters

The structural, electronic and magnetic properties of small gallium clusters doped with Cobalt have been studied using spin-polarised density functional theory. The binding energy per atom, second-order differences of total energies and fragmentation energies of equilibrium geometries of the host Ga_n+1 and doped Ga_nCo (n = 1–12) clusters are computed. Doped clusters are found to be more stable than pure Ga clusters; Ga₃Co, Ga₅Co and Ga₈Co clusters are exceptionally stable. Doping with Co changes the highest occupied molecular orbital-lowest unoccupied molecular orbital (HOMO–LUMO) gap, and also affects the magnetic moments of clusters.     

Synthesis and properties of colloidal ternary ZnGa2O4:Eu nanocrystals

A nonhydrolytic hot solution synthesis technique was used to grow monodisperse ternary oxide nanocrystals of ZnGa₂O₄:Eu³⁺. The shape of ZnGa₂O₄:Eu³⁺ nanocrystals was a function of the type of precursor, and their size was controlled by changing the concentration ratio of Zn precursor to surfactant. The crystal structure of synthesized ZnGa₂O₄ nanocrystals was a cubic spinel with no detectable secondary phases. Photoluminescence of red-emitting ZnGa₂O₄:Eu³⁺ nanocrystals resulted in a high (⁵D₀-⁷F₂)/(⁵D₀-⁷F₁) intensity ratio, suggesting that the Eu³⁺ ions occupy tetrahedral Zn²⁺ sites or distorted octahedral Ga³⁺ sites with no inversion symmetry in ZnGa₂O₄ nanocrystals.     

Gd3Ga5O12:Ag薄膜电致发光材料的制备及其发光性质

研究了Gd₃Ga₅O₁₂:Ag材料的制备及其发光性质.Gd₃Ga₅O₁₂:Ag材料通过固相反应法制得,采用X射线衍射法分 析了材料的结晶度及成分.用电子束蒸发将该材料制备成交流的薄膜电致发光器件,得到了 较好的蓝紫色发光,发光峰分别位于397和467nm.通过对材料的光致发光和激发光谱的研究 和比较,得出397和467nm分别来自于氧空位和Ag⁺的发光.     

Magnetic properties of TbMn6Sn6-xGax (x=0.0－1.2) compounds

Effects of Ga substitution for Sn on the structure and magnetic properties of TbMn₆Sn_6-xGa_x (x=0.0－1.2) compounds have been investigated by means of x-ray diffraction, magnetization measurement and ¹¹⁹Sn M?ssbauer spectroscopy. The substitution of Ga for Sn results in a decrease in lattice constants and unit-cell volumes. The magnetic ordering temperature decreases monotonically with increasing Ga content from 423 K for x=0.0 to 390 K for x=1.2. At room temperature, the easy magnetization direction changes from the c-axis to the ab-plane. This variation implies that the substitution of Ga for Sn leads to a decrease in the c-axis anisotropy of the Tb sublattice. An increase in the non-magnetic Ga concentration results in a monotonic decrease of the spontaneous magnetization M_s at room temperature. Since there are three non-equivalent Sn sites, 2c (0.33, 0.67,0), 2d (0.33, 0.67,0.5) and 2e (0,0,0.34) in the TbMn₆Sn_6-xGa_x compounds, the ¹¹⁹Sn M?ssbauer spectra of the TbMn₆Sn₆ and TbMn₆Sn_5.4Ga_0.6 compounds can be fitted by three sextets. The hyperfine fields (HFs) decrease in the order of HF(2d)>HF(2e)>HF(2c), which is in agreement with the magnetic structure.     

Ga2O3组分对Tm3+掺杂GeO2-Ga2O3-Li2O-BaO-La2O3玻璃的光谱性能影响

制备了Tm³⁺(8.0mol%)掺杂(77-x)GeO₂-xGa₂O₃-8Li₂O-10BaO-5La₂O₃(x=4,8,12,16)系列玻璃.系统地研究了Ga₂O₃从4mol%变化到16mol%时,玻璃的光谱性质与热学性质的变化规律.差热分析表明,随着Ga₂O₃含量的增加,锗酸盐玻璃的热稳定性增加.运用Judd-Ofelt(J_O)理论计算得到了Tm³⁺在不同Ga₂O₃含量的GeO₂-Ga₂O₃-Li₂O-BaO-La₂O₃玻璃中的J-O强度参数(Ω₂,Ω₄,Ω₆)及Tm³⁺各激发能级的自发跃迁概率、荧光分支比以及辐射寿命等光谱参量.在808nm激光二极管的激发下,测试并分析了Ga₂O₃对Tm³⁺荧光光谱特性的影响.随着Ga₂O₃从4mol%增加到16mol%,Tm³⁺在1.8μm处的荧光强度呈现先减弱后增强的特性.当Ga₂O₃含量大约在12mol%时,Tm³⁺在1.8μm处的荧光强度最弱,受激发射截面达到最小.还初步讨论了Ga₂O₃对玻璃结构与光谱参数的影响规律. 关键词： 3+掺杂锗酸盐玻璃')" href="#">Tm³⁺掺杂锗酸盐玻璃 光谱性能 Judd-Ofelt参数 热稳定性