多组元掺杂提升Cu_3SbSe_4基固溶体的热电性能

Cu_3SbSe_4是一种具有黄铜矿结构的三元p-型半导体材料,在热电领域颇受重视.本次工作采用在Cu_3SbSe_4中先掺杂Sn与S,然后再掺杂Ga2Te3这一多组元掺杂方式,通过能带及晶体结构计算,了解多组元掺杂后热电性能提升的结构因素.能带计算表明,共掺杂Sn与S后,禁带区域萌生出杂质带,导致材料的载流子浓度(n_H)和电学性能大幅提高.在691 K时,功率因子(PF)从本征的5.2μW·cm~(–1)·K~(–2)增大到13.0μW·cm~(–1)·K~(–2).虽然Ga占位在Sb或Te占位在Se位置对能带结构作用甚少,但四面体[Sb Se4]和[Se Cu3Sb]的键长和键角发生了改变,从而产生了明显的局部点阵畸变.因此,在691 K时,晶格热导率(k L)从1.23 W·K~(–1)·m~(–1)降低到0.81 W·K~(–1)·m~(–1),有效地抑制了总热导率(k)的提高.最终,材料的最大热电优值(ZT)为0.64,而本征Cu_3SbSe_4的ZT值为0.26.     

Sc掺杂Ti1–xNiSb半哈斯勒合金的制备与热电性能

采用高能球磨法制备了Ti_1-xNiSb(x=0,0.10,0.15,0.20,0.25)和Ti_1-x-ySc_yNiSb (x=0.10,0.15;y=0.03,0.05)样品,并系统地研究了Sc掺杂对Ti_1-xNiSb样品的物相、微结构以及电热输运性能的影响.实验结果表明,Sc掺杂能够有效降低载流子浓度,提高塞贝克系数,改善材料的电输运性能.此外,由于Sc掺杂能够提高原子间的结合能,从而有效减少了NiSb杂相.Ti_1-x-ySc_yNiSb的晶格热导率随Sc掺杂而上升,这可归因于化学键的增强以及电声散射作用的减弱.但是载流子浓度的急剧下降导致样品的电子热导率显著下降,从而Ti_1-x-ySc_yNiSb样品的总热,导率明显降低.最终,Ti_0.8Sc_0.05NiSb样品获得最佳的热电性能,其功率因子在973 K达到17.7μW·cm^-1·K^-2<...     

Mg_2Si_(0.3)Sn_(0.7)掺杂Ag和Li的热电性能对比

采用两步固相法合成了物相均匀的Mg_(2(1–x))Ag_(2x)Si_(0.3)Sn_(0.7)(x=0,0.01,0.02,0.03,0.04,0.05)和Mg_(2(1–y))Li_(2y)Si_(0.3)Sn_(0.7) (y=0, 0.02, 0.04, 0.06, 0.08)热电材料,测试了室温物理性能和室温至773 K的热电性能,研究了不同掺杂剂的固溶度、微观结构、载流子浓度、电性能和热输运. X射线衍射图谱和扫描电子显微镜图像显示掺杂Ag和Li的固溶度分别为x=0.03和y=0.06.根据单抛物线模型, p型的Mg_(2(1–x))Ag_(2x)Si_(0.3)Sn_(0.7)和Mg_(2(1–y))Li_(2y)Si_(0.3)Sn_(0.7)的有效质量为1.2m0.对比结果表明:掺杂Ag或Li的最大载流子浓度分别达到4.64×1019 cm~(–3)和15.1×1019 cm~(–3);掺杂Li元素的样品有较高的固溶度、较高的载流子浓度和较高的功率因子PF约为1.62×10~(–3) W·m~(–1)·K~(–2);掺杂Li元素样品中较高的载流子浓度能够有效抑制双极效应,显著降低双极热导率; Mg_(1.92)Li_(0.08)Si_(0.3)Sn_(0.7)的最大ZT值0.54,比Mg1.9Ag0.1Si0.3Sn0.7的最大ZT值0.34提高了大约58%.根据Callaway理论,由于质量场波动和应变场波动增强声子散射,掺杂Ag和Li元素样品的晶格热导率比未掺杂样品明显降低.     

微量Na元素掺杂对SnSe多晶材料热电性能的影响（英文）

熔炼方法制备微量掺杂多晶硒化锡NaxSn1-xSe(x=0.001-0.005)热电材料,并研究其热、电输运性质.研究结果表明:对硒化锡进行Na元素轻掺杂(x=0.003)时,掺杂样品的电导率有了两个数量级的提高,同时其热导率也有一定的降低;而且掺杂后的样品还拥有很高的Seebeck系数,Seebeck最大能达到300V/K左右.因此硒化锡掺钠多晶Na0.003Sn0.997Se的ZT值能达到1.2左右.     

Co1-xNixSb3-ySey热电输运中晶界和点缺陷的耦合散射效应

结合机械合金化与放电等离子烧结工艺制备了Ni和Se共掺的细晶方钴矿化合物Co1-x NixSb3-ySey,研究了晶界和点缺陷的耦合散射效应对CoSb3热电输运特性的影响.通过Ni掺杂优化载流子浓度提高功率因子.在x=0.1时,功率因子达到最大值1750μWm-1K-2(450℃),是没有掺Ni试样的两倍.晶界和点缺陷的耦合散射机理使晶格热导率急剧下降,其中Co0.9Ni0.1Sb2.85Se0.15的室温晶格热导率降低至1.67Wm-1K-1,接近目前单填充效应所能达到的最低值1.6Wm-1K-1,其热电优值ZT在450℃时达到最大值0.53.将Callaway-Von Baeyer点缺陷散射模型嵌入到Nan-Birringer有效介质理论模型,对晶界散射和点缺陷散射的耦合效应对热导率的影响进行了定量分析,模型计算与实验结果符合.理论模型计算表明,当晶粒尺寸下降到50nm同时掺杂引入点缺陷散射后,Co0.9Ni0.1Sb2.85Se0.15的晶格热导率下降到0.8Wm-1K-1.     

Ge掺杂n型Sn基VIII型单晶笼合物的制备及热电传输特性

采用Sn自熔剂法制备了具有n型传导的VIII型Ba8Ga16 xGexSn30(0 x 1.0)单晶笼合物,并对其结构和热电特性进行研究.研究结果表明:Ge在单晶中的实际含量较少,随着掺杂量的增加样品的晶格常数略有减小,Ge掺杂后样品的载流子浓度较掺杂前低,迁移率增加;所有样品的Seebeck系数均为负值,且绝对值较未掺杂样品低,但Ge掺杂后样品的电导率提高了62%;x=0.5的样品在500 K附近取得最大ZT值1.25.     

Cd掺杂p型Ge基Ba8Ga16CdxGe30-x Ⅰ型笼合物的结构及热电特性

以Cd作为掺杂元素,用熔融法结合放电等离子体烧结(SPS)技术制备了具有不同Cd含量的Ba8Ga16CdxGe30-x(x=0.95,1.00,1.05,1.10) Ⅰ型笼合物,研究了Cd掺杂对其结构及热电性能的影响.Rietveld结构解析表明所制备的Ba8Ga16CdxGe30-x化合物为空间群pm3n的Ⅰ型笼合物,Cd原子主要占据在框架6c和16i位置上且具有较大的原子位移参数(ADP).所有样品均表现为p型传导,样品的载流子散射机制由低温的杂质电离散射为主逐渐过渡到高温的声学波散射为主.随Cd掺杂量的增加,对应化合物电导率逐渐增加,Seebeck系数逐渐降低.由于Cd原子较大的ADP,从而导致较低的晶格热导率,在室温附近,Ba8Ga16Cd1.10Ge28.90化合物的晶格热导率与Ba8Ga16Ge30化合物相比约降低38%.Ba8Ga16Cd1.00Ge29.00化合物的最大ZT值在600 K时为0.173.     

Zn掺杂P型Ba8Ga16ZnxGe30-x笼合物的合成及热电性能

用熔融法结合放电等离子烧结方法合成了Zn掺杂单相p型Ge基Ⅰ型笼合物Ba8Ga16ZnxGe30-x(x=3,4,5,6),探索Zn取代Ge对其热电性能的影响规律,结果表明:所制备的Ba8Ga16ZnxGe30-x化合物为p型传导,随Zn取代量x的增加,化合物室温载流子浓度Np逐渐增加,室温载流子迁移率μH和电导率逐渐降低.在所有试样中,Ba8Ga16Zn3Ge27化合物的Seebeck系数α在300—870K内始终最大,温度为300K时Seebeck系数为234μV/K,在700K附近达295μV/K.化合物的热导率随Zn取代量x的增加而降低.Ba8Ga16Zn3Ge27化合物在806K最大ZT值达0.38.     

La0.7Ca0.3Mn1-xCrxO3 (0.01≤x≤0.60)的低温热导

测量了锰位掺Cr系列巨磁阻多晶样品La0 .7Ca0 .3Mn1-xCrxO3(0 .0 1≤x≤ 0 .6 0 )的热导 ,实验温区 77～ 30 0K .随着Cr掺杂浓度x的增加 ,热导率κ(T)在所测温区内受到的压制变大 ,但当x =0 .6 0时 ,热导值却有较大的回升 ,显示了Cr掺入对晶格结构局部涨落的影响 .随温度降低 ,低掺杂样品在MI(金属 绝缘体 )转变点附近热导率κ(T)由dκ/dT >0变成dκ/dT<0 ,而高掺杂样品无MI转变 ,热导率随温度降低而减小 ,即dκ/dT >0 ,我们认为这是由载流子处于局域或巡游状态时与晶格的相互作用不同而导致的 .     

Lu~(3+)掺杂对CdO陶瓷电、热输运性能的影响

利用传统固相烧结法制备了Cd1-xLuxO(x=0%,0.1%,0.5%,0.75%,1.0%,1.25%,1.5%,2%)陶瓷样品并研究了Lu3+掺杂对其电、热输运性能的影响.随着Lu3+掺杂浓度的增大,Cd1-xLuxO样品的室温载流子浓度持续增大而其迁移率表现出先增大后减小的趋势.在300—1000 K测试温度区间内,Cd1-xLuxO的电导率表现出金属电导行为且其电导率和热导率均随着Lu3+掺杂浓度的增大而升高;塞贝克系数在整个测试区间内均为负值,其随温度和载流子浓度的变化关系可用自由电子模型描述.     

Disruption of antiferromagnetic order in Zn-doped La2CuO4

The magnetic phase diagram of La₂(Cu_1−xZn_x)O₄ has been determined from zero-field muon-spin-rotation (ZF-μSR) data taken at LAMPF for 0 ≤ x ≤ 0.10. Antiferromagnetic onset temperatures follow T_N(x) from susceptibility measurements on the same samples. However, the order becomes long range, as evidenced by a well-defined internal magnetic field, only at temperatures well below T_N. Extrapolation of our results yields T_N → 0 K at x = 0.11 for a single (Cu_1−xZn_x)O₂ plane, and comparison with YBa₂(Cu_1−xZn_x)₃O₆ implies identical disruption of magnetism by Zn doping in the single- and double-plane systems.     

非等电子Sb替换Cu和Te后黄铜矿结构半导体Cu_3Ga_5Te_9的热电性能

热电材料是一类能够实现热与电相互转换的功能材料,在制冷和发电领域极具应用潜力.本文采用金属Sb元素非等电子替换Cu3Ga5Te9化学式中的Cu和Te,观察到材料Seebeck系数和电导率提升的现象.这些电学性能的改善与载流子浓度和有效质量的增大及迁移率基本维持不变有关.载流子浓度的提高是由于Sb原子占位在Te晶格位置后费米能级进入到价带所产生的空穴掺杂效应所致,同时也与Cu含量减少后铜空位(V-1Cu)浓度增大相关联.另外,非等电子替换后,阴离子(Te2-)移位导致了晶格结构缺陷参数u和η的改变,其改变量fiu和fiη与材料晶格热导率(κL)的变化密切相关.在766 K时,适量的Sb替换量使材料的最大热电优值(ZT)达到0.6,比Cu3Ga5Te9提高了近25%.因此,通过选择替换元素、被替换元素及替换量有效地调控了材料的电学及热学性能,在黄铜矿结构半导体中实现了非等电子元素替换改善热电性能的思想.     

Material design of new lithium ionic conductor, thio-LISICON, in the Li2S–P2S5 system

A new lithium ionic conductor of the thio-LISICON (LIthium SuperIonic CONductor) family was found in the binary Li₂S–P₂S₅ system; the new solid solution with the composition range 0.0≤x≤0.27 in Li_3+5xP_1−xS₄ was synthesized at 700 °C and characterized by X-ray diffraction measurements. Its electrical and electrochemical properties were studied by ac impedance and cyclic voltammetry measurements, respectively. The solid solution member at x=0.065 in Li_3+5xP_1−xS₄ showed the highest conductivity value of 1.5×10⁻⁴ S cm⁻¹ at 27 °C with negligible electronic conductivity and the activation energy of 22 kJ mol⁻¹ which is characteristic of high ionic conduction state. The extra lithium ions in Li₃PS₄ created by partial substitution of P⁵⁺ for Li⁺ led to the large increase in ionic conductivity. In the solid solution range examined, the minimum conductivity was obtained for the compositions, Li₃PS₄ (x=0.0 in Li_3+5xP_1−xS₄) and Li₄P_0.8S₄ (x=0.2 in Li_3+5xP_1−xS₄); this conductivity behavior is similar to other thio-LISICON family with the general formula, Li_xM_1−yM_y′S₄ (M=Si, Ge, and M′=P, Al, Zn, Ga, Sb). Conduction mechanism and the material design concepts are discussed based on the conduction behavior and the structure considerations.     

Ca2+掺杂对CdO多晶热电性能的影响

以CaCO₃作为Ca²⁺源, 利用传统固相烧结法制备了Cd_1-xCa_xO (x=0, 0.01, 0.03, 0.05) 多晶块体样品并研究了Ca²⁺掺杂对CdO高温热电性能的影响. CaCO₃的掺入会导致CdO多晶载流子浓度降低, 使Cd_1-xCa_xO的电阻率ρ和塞贝克系数的绝对值|S|增大、电子热导率κ_e减小. 同时, 在CdO中掺入CaCO₃会引入点缺陷和气孔并可抑制CdO晶粒长大、晶界增多, 从而增加了对声子的散射, 使样品的声子热导率κ_p减小. 由于总热导率的大幅降低, Cd_0.99Ca_0.01O多晶样品在1000 K时的热电优值ZT可达0.42, 比本征CdO提高了约27%, 为迄今n型氧化物热电材料报道的最好结果之一.     

Perovskite-like system (Sr,La)(Fe,Ga)O3−δ: structure and ionic transport under oxidizing conditions

The maximum solid solubility of gallium in the perovskite-type La_1−xSr_xFe_1−yGa_yO_3−δ (x=0.40–0.80; y=0–0.60) was found to vary in the approximate range y=0.25–0.45, decreasing when x increases. Crystal lattice of the perovskite phases, formed in atmospheric air, was studied by X-ray diffraction (XRD) and neutron diffraction and identified as cubic. Doping with Ga results in increasing unit cell volume, while the thermal expansion and total conductivity of (La,Sr)(Fe,Ga)O_3−δ in air decrease with gallium additions. The average thermal expansion coefficients (TECs) are in the range (11.7–16.0)×10⁻⁶ K⁻¹ at 300–800 K and (19.3–26.7)×10⁻⁶ K⁻¹ at 800–1100 K. At oxygen partial pressures close to atmospheric air, the oxygen permeation fluxes through La_1−xSr_xFe_1−yGa_yO_3−δ (x=0.7–0.8; y=0.2–0.4) membranes are determined by the bulk ambipolar conductivity; the limiting effect of the oxygen surface exchange was found negligible. Decreasing strontium and gallium concentrations leads to a greater role of the exchange processes. As for many other perovskite systems, the oxygen ionic conductivity of La_1−xSr_xFe_1−yGa_yO_3−δ increases with strontium content up to x=0.70 and decreases on further doping, probably due to association of oxygen vacancies. Incorporation of moderate amounts of gallium into the B sublattice results in increasing structural disorder, higher ionic conductivity at temperatures below 1170 K, and lower activation energy for the ionic transport.     

Doping effects in the Sr14Cu24O41-type structure: a Raman scattering study

Polarized micro-Raman spectra of different compounds belonging to the Sr₁₄Cu₂₄O₄₁-type structure were studied. In the spectra with parallel polarization along the plane crystal axes of the insulating samples Sr₉R₅Cu₂₄O₄₁ (R = La, Y) a broad peak near 3000 cm⁻¹, similar to the well-known two-magnon peak in the layered cuprates, was observed. In addition to the Raman lines characteristic for this structure, we observed only in the spectra with parallel to the chains numerous lines between 100 and 1200 cm⁻¹, probably originating from Raman-forbidden infrared-active only LO phonons and their combinations. In the spectra of the conducting compounds Sr_14−xCa_xCu₂₄O₄₁ (x = 0,7) these features were very weak or disappeared. We interpret these results as Raman evidence for hole doping of the Cu₂O₃ “spin-ladder” planes and for a redistribution of holes between chains and planes through Ca substitution in the case of the rare-earth-free samples.     

The relationship between crystal structure and electrical conductivity in the LaY1−xInxO3 (x=0.0–0.7) system

The electrical conductivity of the LaY_1−xIn_xO₃ (x=0.0–0.7) system has been studied from the viewpoint of crystal chemistry. The high temperature form of LaYO₃ (x=0.0) was ascertained to be the Sm₂O₃-type (B-type rare earth) structure, not perovskite-type one. The X-ray diffraction (XRD) experiments revealed that the samples with x=0.05 and 0.10 were the mixed phase of Sm₂O₃-type and perovskite-type structure, and changed to perovskite phase in the range of x0.20. From oxygen partial pressure dependence of the electrical conductivity, it was found that both the Sm₂O₃-type and the perovskite-type single phases showed hole conduction, but the mixed phase did oxide-ion one. The electrical conductivity of the LaY_1−xIn_xO₃ (x=0.0–0.7) system increased with increasing x, and showed the maximum value in the range of x=0.05–0.10, and then decreased with increasing x. The occurrence of oxide-ion conduction was discussed from the viewpoint of lattice distortion in the mixed phase.     

Mixed electronic and ionic conductivity of LaCo(M)O3 (M=Ga, Cr, Fe or Ni).: V. Oxygen permeability of Mg-doped La(Ga, Co)O3−δ perovskites

The LaGa_1−x−yCo_xMg_yO_3−δ solid solutions with rhombohedrally-distorted perovskite structure were ascertained to form in the concentration range of 0≤y≤0.10 at x=0.60 and 0≤y≤0.20 at x=0.35–0.40. Increasing cobalt content results in increasing electrical conductivity and thermal expansion of the perovskites. Thermal expansion coefficients of the LaGa_1−x−yCo_xMg_yO_3−δ ceramics were calculated from the dilatometric data to vary in the range of 12.4–19.8×10⁻⁶ K⁻¹ at 300–1100 K. Doping La(Ga,Co)O_3−δ solid solutions with magnesium leads to increasing oxygen nonstoichiometry, electronic and oxygen ionic conductivity. Oxygen permeation fluxes through LaGa_1−x−yCo_xMg_yO_3−δ membranes were found to be limited by the bulk ionic conduction and to increase with magnesium concentration, being essentially independent of cobalt content.     

钙钛矿锰氧化物(La_(1-x)Eu_x)_(4/3)Sr_(5/3)Mn_2O_7(x=0,0.15)的磁性和电性研究

通过传统固相反应法制备了钙钛矿锰氧化物(La1-xEux)4/3Sr5/3Mn2O7(x=0,0.15)多晶样品,并且对其磁性和电性进行了研究.磁性测量表明:随着温度的降低,样品经历了一个复杂的转变过程,在温度为T*时经历二维短程铁磁有序转变,在温度为TC时进入三维长程铁磁态.随着Eu的掺杂,T*和TC减小,并且样品(La0.85Eu0.15)4/3Sr5/3Mn2O7在低温区表现出自旋玻璃行为.电性质测量表明:在母体La4/3Sr5/3Mn2O7中La位掺杂Eu后电阻率明显变大,金属绝缘转变温度TMI降低,磁电阻峰值增大.这些影响归因于较小的Eu3+离子替代La3+离子导致平均离子半径减小,晶格发生畸变.此外,较小的Eu3+离子优先占据层间岩盐层的R-site,使La3+,Sr3+,Eu3+离子在(La0.85Eu0.15)4/3Sr5/3Mn2O7中的分布更加有序,所以x=0.15的样品的ρ-T曲线只有一个峰.     

The effect of gallium substitution on the superconductivity of the BiSrCaCuO system

Magnetic susceptibility, X-ray diffraction and resistivity measurements of the system Bi_1.4Pb_0.6Sr₂Ca_2−xGa_xCu₃O_y are reported for 0 x 2. The high-T_c 2223 phase with a T_c of 107 K for x = 0 exists for x 0.3. The low-T_c 2212 phase with a T_c of 75 K for x = 0 exists for the full range of x. The highest values of the critical temperature and the largest volume fraction of the low-T_c phase in compounds with Ga occur for x = 0.5 ± 0.1. The identification of CaO by X-ray diffraction for x 0.6 indicates that Ga replaces Ca in the compound.