光折变晶体Ce:BaTiO3电光和压电系数的测量

用干涉仪的方法测量了Ce:BaTiO₃晶体的低频电光系数和压电系数．排除压电效应对光通过晶体引起相位的变化，得到低频下经极化的Ce:BaTiO₃单晶的电光系数r₄₂=1945±220pm/V和r₁₃=11.8±1pm/V．从而，为研究Ce:BaTiO₃晶体的光折变效应和理论计算提供了精确的线性电光系数 关键词：     

光纤马赫-曾德尔干涉法测量极化聚合物的电光系数

报道了用光纤马赫曾德尔干涉法测量极化聚合物电光系数的方法和原理。该方法不仅可以测量聚合物薄膜的电光系数而且可以测量聚合物波导的电光系数,并且该方法可以同时测量聚合物的电光系数张量元r13和r33。该方法最突出的优点是不必在聚合物薄膜的表面制备第二个电极,因此尤其适合于在电光聚合物试制阶段测试聚合物的电光系数。干涉仪的输出被反馈到参考臂中控制相位偏置点的压电陶瓷,从而实现对干涉仪相位偏置点的闭环控制,因此降低了对环境稳定性的要求并且提高了测量精度。实际测试了极化聚合物薄膜PMMA-DR1的电光系数张量,其测量值r13=8.3 pm/V,r33=25.7 pm/V。     

基于KH56O修饰的有机/无机杂化材料电光波导制备

利用溶胶-凝胶法制备了硅烷偶联剂KH560修饰的有机/无机杂化电光材料,分析了KH560的水解缩合的反应机理.对制备好的电光薄膜进行了表面形貌、折射率和电光特性的表征,并用反射法测量得出了该材料的电光系数为3.5pm/V.针对这种材料柔韧的特性,设计了上加载条形电光波导,并利用Opti-BPM软件模拟了二维和三维光场....     

基于KH560修饰的有机/无机杂化材料电光波导制备

利用溶胶-凝胶法制备了硅烷偶联剂KH560修饰的有机/无机杂化电光材料,分析了KH560的水解缩合的反应机理.对制备好的电光薄膜进行了表面形貌、折射率和电光特性的表征,并用反射法测量得出了该材料的电光系数为3.5pm/V.针对这种材料柔韧的特性,设计了上加载条形电光波导,并利用Opti-BPM软件模拟了二维和三维光场.摸索了其制备的加工工艺,制备了该结构的光波导,最后得到了这种波导的近场输出.     

低阈值极化电压玻璃光波导电光效应的研究(英文)

采用热极化技术对掺锗玻璃条形光波导进行极化,通过光纤连接(单模)的Mach ZehnderInterferometer系统测量条形波导内诱导出的电光效应,系统地研究了大气环境下极化条件(极化温度、极化时间、极化电压)对电光效应的影响.结果表明:在最佳极化条件下(406℃、-2.4kV、20min),波导内的电光系数为rTM=0.059±0.001pm/V,rTE=0.053±0.001pm/V,且波导结构中存在一个较低的阈值极化电压(100V)和阈值极化温度(80℃),此时在波导样品内仍能被激发出可观察的电光效应;实验还发现采用负极化诱导方式产生的电光系数较正极化提高15%左右.     

铁电单晶0.62Pb(Mg1/3Nb2/3)O3-0.38PbTiO3折射率的研究

用最小偏向角法在20℃下精确测量了0.62Pb(Mg1/3Nb2/3)O3-0.38PbTiO3(0.62PMN-0.38PT)单晶的折射率,给出了该温度下折射率色散的Sellmeier方程.研究了能带结构与折射率的关系,计算了样品的Sellmeier光学系数:对no,E0=5.50eV,λ0=0.226μm,S0=1.004×1014m-2,Ed=28.10eV;对ne,E0=5.57eV,λ0=0.223μm,S0=1.017×1014m-2,Ed=28.10eV.ABO3型钙钛矿材料中,BO6八面体基元决定了晶体的能带结构,对折射率产生重要影响.     

SiO2脊形条波导热极化引起的电光效应

通过理论模拟对具有上覆盖层的SiO2脊形条波导结构进行了优化,在此基础上利用微电子工艺制作了SiO2脊形波导Mach-Zehnder 型电光调制器,并进行热极化引起的电光和非线性效应的研究.热极化过程大幅增强了样品的电光及非线性效应,二次电光系数由热极化前的1.56×10-22(m/V)2提高到热极化后的8.50×10-22(m/V)2,极化后得到了0.093pm/V的线性电光系数,对热极化的物理机理进行了理论分析.     

铁电单晶0.62Pb(Mg1/3Nb2/3)O3-0.38PbTiO3折射率的研究

用最小偏向角法在20℃下精确测量了0.62Pb(Mg_1/3Nb_2/3)O_{3< /sub>-0.38PbTiO3( 0.62PMN-0.38PT)单晶的折射率，给出了该温度下折射率色散的Sellmeier方程.研究了能带 结构与折射率的关系，计算了样品的Sellmeier光学系数：对no，E0=5.50eV,λ0=0.2 26μm，Ｓ０=1.004×10¹⁴m^-2，Ed=28.1 0eV；对ne，Ｅ0=5.57eV,λ 0=0.223μm，S0=1.017×10¹⁴m^-2，Ed=28.10eV.A BO3型钙钛矿材料中，BO6八面体基元决定了晶体的能带结构，对折 射率产生重要影响. 关键词： PMNT单晶 折射率 Sellmeier光学系数}     

低阈值极化电压玻璃光波导电光效应的研究

采用热极化技术对掺锗玻璃条形光波导进行极化,通过光纤连接 (单模) 的Mach Zehnder Interferometer 系统测量条形波导内诱导出的电光效应,系统地研究了大气环境下极化条件(极化温度、极化时间、极化电压)对电光效应的影响.结果表明:在最佳极化条件下(406℃、-2.4 kV、20 min),波导内的电光系数为r_TM=0.059±0.001 pm/V, r_TE=0.053±0.001 pm/V,且波导结构中存在一个较低的阈值极化电压(100 V)和阈值极化温度(80℃),此时在波导样品内仍能被激发出可观察的电光效应;实验还发现采用负极化诱导方式产生的电光系数较正极化提高15%左右.     

一种具有高二阶非线性椭圆芯中空光纤

提出并制造一种新颖的椭圆芯中空光纤,采用热极化方法使其具有高二阶非线性,可用作相位调制器。该光纤在300℃温度、大于1×108 V/m强电场和9cm有效电极长度条件下热极化30min后,产生大的线性电光相移。基于双椭圆芯中空光纤构建一种纤内马赫-曾德尔干涉仪,通过观察干涉条纹的移动来评估相移,最终得到1.16pm/V的高二阶非线性系数和0.52pm/V的线性电光系数。该技术具有简单、灵活的特点,可以用来制作高电光系数器件,降低制作成本,并能进一步提高全光纤器件的集成度。     

Linear electro-optic properties of YCa4O(BO3)3

We have characterized the effective linear electro-optic coefficients of YCa4O(BO3)3 (YCOB) relative to KH2PO4 and KD2PO4 at 632.8 nm. We measured a maximum r(eff) value of 10.8 +/- 1.4 pm/V for YCOB in a transverse electric field configuration for propagation along the X or the alpha dielectric axis, with the electric field applied along the Z or the gamma dielectric axis. We also found effective coefficients of 10.7 +/- 1.0 and 3.4 +/- 0.4 pm/V for YCOB in longitudinal configurations. The remaining values of r(eff) for various transverse applied voltages were found to be less than 3 pm/V. The excellent thermomechanical properties of this crystal, coupled with moderate electro-optic coefficients, make YCOB and its isomorphs potential candidates for use as high-average-power electro-optic switches.     

Effective in-device r33 of 735 pm/V on electro-optic polymer infiltrated silicon photonic crystal slot waveguides

We design and fabricate a 320?nm slot for an electro-optic (E-O) polymer infiltrated silicon photonic crystal waveguide. Because of the large slot width, the poling efficiency of the infiltrated E-O polymer (AJCKL1/amorphous polycarbonate) is significantly improved. When coupled with the slow light effect from the silicon photonic crystal waveguide, an effective in-device r(33) of 735?pm/V, which to our knowledge is a record high, is demonstrated, which is ten times higher than the E-O coefficient achieved in thin film material. Because of this ultrahigh E-O efficiency, the V(π)L of the device is only 0.44?V?mm, which is to our knowledge the best result of all E-O polymer modulators.     

电光晶体研究究进进展及其对称性性研研究

由电场引起的晶体折射率的变化称为晶体的电光效应,具有电光效应的晶体称为电光晶体。利用电光效应可以制作电光Q开关等重要光电器件。晶体的电光效应及其有效利用,均与其对称性密切相关。本文在综述电光晶体研究进展的基础上,推导了不同晶系中各晶类电光效应类型及其特点,并以电光Q开关的要求为例讨论了晶体的电光效应及其对称性之间的关系。从讨论结果得出:立方晶系Td-ˉ43m,三方晶系C3v-3m,四方晶系D2d-4ˉ2m,D4v-4mm和六方晶系D3h-6ˉm2,C6v-6mm点群中相应电光系数的横向或纵向效应可能有实用价值。在考虑旋光性影响后,立方晶系T-23,三方晶系D3-32,四方晶系中S4-4ˉ,六方晶系中C3h-6ˉ等也有可能应用。但是,电光晶体的应用与许多因素相关,对称性只是其中一个基本条件。     

High-frequency response and acoustic phonon contribution of the linear electro-optic effect in DAST

We present a simple method to measure the contribution from acoustic phonons to the linear electro-optic effect. A step voltage with a short rise time (600 ps) is applied to the sample, and the electro-optic response is measured in the time domain. For the organic salt 4-N, N-dimethylamino-4(?)-N(?)-methyl-stilbazolium tosylate (DAST), we obtained a negative contribution of r(a)(111) = -1.0 +/- 0.1 pm/V to the overall electro-optic coefficient of r(111) = 48 +/- 5 pm/V (lambda = 1535 nm). The electro-optic response was limited only by the rise time of the applied voltage, which corresponds to a frequency of 1 GHz.     

Electro-optic characterization of tetragonal (1−x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 single crystals by a modified Sénarmont setup

The refractive indices of tetragonal (1−x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃ (PMN-xPT) single crystals were measured with a prism coupler and their linear electro-optic (EO) properties were investigated from 20 to 80 °C by the automated scanning Sénarmont system with an ac field. The composition and temperature effect on the EO coefficients were also discussed. It has been found that their EO coefficients are much larger than that of widely used LiNbO₃ single crystal and the calculated half-wave voltages are also much lower, which enable the operation at lower voltages and the smaller device dimensions. Since the excellent EO properties are very stable and such high quality single crystals with large-size have been obtained, the PMN-xPT single crystals are a very promising candidate for EO modulation applications. By linking to the polarization-related quadratic EO coefficients, we find that the linear EO properties are related with the spontaneous polarization and dielectric constants.     

Electro-Optic Coefficient Measurements for Zn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript> Te Single Crystals at 1550 nm Wavelength

Nonlinear optical materials of the type Zn _x Cd_1-x Te single crystals, where x = 0.0, 0.2, 0.4, 0.6, 0.7, 0.8, and 1.0, have been grown by the Bridgman method, using a vertical furnace. We have investigated the electro-optic (E-O) coefficient and refractive index of Zn _x Cd_1-x Te single crystals at optical communication wavelength (1550 nm). In the case of CdTe crystal, the E-O coefficient was 15.5 × 10^-12 m/V, which is the biggest among the E-O coefficients of Zn _x Cd_1-x Te crystals. The E-O modulation signal was very big in low frequency range (DC-100kHz), but the signal amplitude became smaller as we increased frequency above 100 kHz. We also found the acousto-optic modulation at CdTe single crystals.     

温度对铌酸锂电光相位调制特性的影响

利用折射率椭球基本理论对线性电光效应进行了分析,对单轴晶体铌酸锂电光相位调制器的温度特性进行了研究。通过计算机进行数值模拟计算,分析了加电场时光通过LiNbO3电光调制器后出射光的相位变化与温度间的关系,得出在横向和纵向调制中温度对相位改变的影响。研究发现,无论在横向还是在纵向调制下,入射光偏振方向不同但其各自受温度影响的相位变化趋势大体一致,即随着晶体中温度的增加而增大。计算结果表明,LiNbO3电光调制的最佳使用方案为：电场沿x主轴方向施加,入射光偏振方向为感应主轴x’方向,且LiNbO3电光调制器粟用横向相位调制方式。     

Index of refraction, optical activity and electro-optic coefficient of bismuth titanium oxide (Bi12TiO20)

12 TiO₂₀. The first two can be measured by simple and classical methods, but the coexistence of optical activity, electrogyration, field-induced linear birefringence, and piezoelectric and photoelastic effects in photorefractive materials such as Bi₁₂TiO₂₀ complicate the measurement of the electro-optic coefficient. For normal incidence of linearly polarized light we derive analytic expressions for the polarization of light that has passed through the crystal. The ellipticity of the polarization is a function of the electric-field-induced linear birefringence and hence of the electro-optic coefficient of the crystal. Therefore measurement of the ellipticity as a function of an electric field externally applied to the crystal leads to an electro-optic coefficient r₄₁ of 5.3±0.1 pm/V. Received: 22 December 1996/Revised version: 21 March 1997