一个新的IEC61000-4-2标准ESD电流解析表达式

 分析了两个ESD标准电流波形表达式，并提出一个新的基于脉冲函数来描述ESD标准电流的解析表达式，该表达式符合最新的标准IEC61000-4-2，在零时刻的电流及其微分部为0，且波形与实际测量波形基本吻合。     

传输线长度对静电放电防护器件性能测试的影响

为了研究传输线长度对静电放电防护器件性能测试结果的影响,建立了静电放电模型和传输线脉冲模型两种试验系统,对某限压型防护器件进行了快沿电磁脉冲注入试验,并进行了理论分析。结果表明:传输线长度对静电放电防护器件性能测试结果具有极大影响,选用不当会导致错误结论;在对静电放电防护器件性能测试时,应优先采用传输线脉冲测试法;当采用静电放电脉冲测试法时,其传输线长度不应小于8 m。     

Human-to-metal electrostatic discharge current measurements – Notes on the ESD current waveform

The Electrostatic Discharge (ESD) phenomenon has been described through the IEC 61000-4-2. ESD current parameters' values, have been set in this Standard. The theoretical ESD current waveform defined in this standard, describing the conventional Contact discharge mode, needs to be re-evaluated on the basis of accurate experimental data. Even though the standard deals with commercial ESD generators, its goal is to simulate the natural phenomenon as good as possible. More and accurate data may contribute to the better simulation of the natural phenomenon. New values and better comprehension of the phenomenon demand new measurements based on high end measuring equipment. Such works and publications have been carried out the past years. Yet, the need to systematize and integrate this work remains. Larger and trust-worthy series of measurements need to be carried out and presented clearly.This paper deals with new ESD-current data, taken with broadband equipment. New and more detailed measurements like these, were never before taken at such a large number of individuals. The goal of this work is that the data acquired can serve as a basis for re-evaluating the conventional approach of the scientific community to the ESD event.In this paper, using a broadband measuring system, new parameters' values are measured and relations are presented, following standard statistical procedures. The results, which occur from measurements carried out on tenths of human individuals, are questioning the Standard in many points. A new way of approaching the standardization of the ESD current is proposed, as the excuse of the poor measuring equipment that sets barriers on the measuring accuracy, does not apply any more. The charging voltages of 500 V and 1000 V were also examined since such range of voltages are often met at ESD events and they are considered very harmful.     

基于TLP建模的系统级静电放电效应仿真

系统级静电放电(ESD)效应仿真可以在电子系统进行测试之前进行有效的静电放电效应防护,缩短研发周期。根据传输线脉冲测试(TLP)结果,对瞬态电压抑制(TVS)二极管和芯片引脚进行spice行为建模,结合ESD脉冲源的等效电路模型,PCB板的S参数模型,采用场路协同技术完成了系统级静电放电效应的仿真。针对一个典型的电子系统,在IEC 61000-4-2 ESD应力作用下,完成了一款开关芯片防护电路的仿真,并对电路进行了加工、放电测试,仿真与测试芯片引脚的电压波形吻合良好,验证了该仿真方法的有效性。     

Evaluation of ESD hardness of fingerprint sensor LSIs

We evaluated the electrostatic discharge (ESD) hardness of capacitive fingerprint sensor large scaled integrated circuits (LSIs) with two kinds of ESD test methods.We used three kinds of fingerprint sensor LSIs, i.e., a conventional planar sensor LSI, a sensor LSI with a grounded wall (GND wall) structure where each sensor plate was surrounded by a lattice-like wall, and a sensor where some of the sensor plates had been replaced with GNDs. In human body model (HBM)-based contact discharge tests, the sensor LSI with the GND wall structure and the one with the GNDs demonstrated a high ESD hardness compared with the planar sensor LSI. An air discharge test was also carried out in accordance with IEC61000-4-2 specifications because other ESD tests cannot be used to estimate over ±8 kV. The ESD hardness of the GND wall structure was ±20 kV, whereas that of the other sensor with the GND structure was below ±12 kV. It was evident from our findings that the ESD hardness of sensor LSIs obviously depends on the number of GNDs in the sensor region, their arrangement, and the GND structure, and that the sensor LSI with the GND wall had the highest ESD hardness.     

High power and high reliability GaN/InGaN flip-chip light-emitting diodes

High-power and high-reliability GaN/InGaN flip-chip light-emitting diodes (FCLEDs) have been demonstrated by employing a flip-chip design, and its fabrication process is developed. FCLED is composed of a LED die and a submount which is integrated with circuits to protect the LED from electrostatic discharge (ESD) damage. The LED die is flip-chip soldered to the submount, and light is extracted through the transparent sapphire substrate instead of an absorbing Ni/Au contact layer as in conventional GaN/InGaN LED epitaxial designs. The optical and electrical characteristics of the FCLED are presented. According to ESD IEC61000-4-2 standard (human body model), the FCLEDs tolerated at least 10\,kV ESD shock have ten times more capacity than conventional GaN/InGaN LEDs. It is shown that the light output from the FCLEDs at forward current 350mA with a forward voltage of 3.3\,V is 144.68\,mW, and 236.59\,mW at 1.0\,A of forward current. With employing an optimized contact scheme the FCLEDs can easily operate up to 1.0\,A without significant power degradation or failure. The life test of FCLEDs is performed at forward current of 200\,mA at room temperature. The degradation of the light output power is no more than 9\% after 1010.75\,h of life test, indicating the excellent reliability. FCLEDs can be used in practice where high power and high reliability are necessary, and allow designs with a reduced number of LEDs.     

强电磁脉冲的有效带宽、测量带宽及来自上升时间的影响

 从能量分布和测量有效性的观点出发，提出了强电磁脉冲的能量有效带宽和动态范围有效带宽的概念。针对IEC61000－4－4,MIL－STD－464,IEC61000－4－2,IEC61312－1等标准规定的核电磁脉冲(NEMP)、雷电电磁脉冲(LEMP)、静电放电电磁脉冲(ESDEMP)等强电磁脉冲，分别计算了它们的能量有效带宽和动态范围有效带宽。通过分析，得知在一定的范围内，上述强电磁脉冲上升时间的变化对两种有效带宽的影响并不明显，在此基础上，确定了它们的测量带宽。计算结果为NEMP，ESD EMP及LEMP的60 dB有效带宽分别是371，786，1 233 MHz与96 kHz；99%能量有效带宽分别是46，95，183 MHz与15 kHz；不失真测量所需的带宽分别是152，307，916 MHz和95 kHz。     

高空核爆电磁脉冲波形标准及特征分析

 目前，国际上已有美军标、国际电工委员会、Bell实验室及各种学术出版物等各种高空核爆电磁脉冲波形标准。综述了这些标准，并从时域参数、频谱、归一化累积能流谱、总的能量密度等几方面研究其异同性。比较后认为，IEC61000-2-9和MIL-STD-461E表述的新标准要比1976年出版物波形和Bell实验室波形的频谱范围宽，对电子系统的小孔缝耦合效应稍强，但对多数效应物尤其是线缆引入的传导耦合，损伤程度则相对弱化。最后，分析了由于HEMP波形表述形式变化，给EMP模拟器和效应研究带来的影响和新动态趋势。     

考虑参数不确定性的高空电磁脉冲E1分量环境计算及分析

高空电磁脉冲的早期分量幅值高、频谱宽、分布范围广,是高空核爆的电磁效应的重要组成部分。分析了国内外高空电磁脉冲早期分量仿真计算法的研究进展,并选取基于高频近似并考虑电子与电磁场自洽作用的EXEMP算法进行详细介绍,通过数值计算结果总结了高空电磁脉冲的时域波形和空间分布随场源当量、爆高等参数变化的规律,与IEC标准约定的波形时域和空间特征一致。针对HEMP计算中部分参数的不确定性,分析参数取值偏差和波动对电磁脉冲计算结果的影响,使用多项式混沌方法联合Sobol全局敏感度指标对其进行不确定量化,得到电磁脉冲关键值可能分布的上下界、分布的概率密度等信息,分析各参数在特定取值范围内对电磁脉冲特征参数的影响及联合影响。     

Comparison of ESD from metal sphere electrodes and tribocharged insulators of both polarities using two ESD probes

Electrostatic discharge (ESD) is an important source of accidental ignitions in process industries and damage to semiconductor electronic devices. There is a need to understand the time-varying ESD event and interaction between ESD probe and source in order to understand the important parameters in ESD measurements for evaluation of these phenomena.This paper compares measured peak current, waveform, risetime and charge transferred in ESD from charged isolated spherical conductors with and without a ground plane (spark), and triboelectrically charged polyethylene and polyamide samples (brush discharge). Measurements made using two recently developed ESD probes are compared.     

ESD qualification data used as the basis for building electrostatic discharge protected areas

ESD control programs that are based on the standards IEC61340-5-1 and ANSI/ESD S20.20 are targeted to provide safer handling of electronic parts now susceptible to damage by electrostatic discharge. However, ESD failures have occurred in EPA even when all standard control methods are met. To further improve EPAs, ESD control programs should be updated to cover all known common discharge scenarios, and multiple parallel ESD source parameters should be used to assess the level of ESD risks. In addition, a reliable ESD risk assessment should be based on discharge source circuit analysis and product sensitivity tests using the real discharge waveforms found in EPA.     

静电放电电磁脉冲模拟装置

 介绍了静电放电电磁脉冲（ESD EMP）的特性。研究了用ESD 模拟器产生ESD EMP的方法，并给出了ESD EMP的时域波形和频谱。在研究ESD模拟器的基础上，首次通过ESD模拟器和GTEM室的结合，在GTEM室内产生了均匀的、重复性和线性好的ESD EMP。实验表明，用这种装置能够实现对静电放电电磁脉冲的实验室模拟。实现了人们用GTEM室产生ESD EMP的梦想。     

静放电电磁脉冲模拟装置

介绍了静电放电电磁脉冲（ESD EMP）的特性，研究了用ESD模拟器产生ESD EMP的方法，并给出了ESD EMP的时域波形和频谱。在研究ESD模拟器的基础上，首次通过ESD模拟器和GTEM室的结合，在GTEM室内产生了均匀的，重复性和线性好的ESD EMP。实验表明，用这种能够实验对静电放电电磁脉冲的实验室模拟，实验了人们用GTEM室产生ESD EMP的梦想。     

ESD currents induced in a charged human body approaching a vehicle

The finite-difference time-domain (FDTD) method is used to calculate electrostatic discharge (ESD) currents induced in a charged human body approaching a vehicle. Maximum current densities induced in the human body are much higher than the threshold current density of 1 μA/cm² for the steady-state current flow cases, which may cause biological effects. It is found that the ESD current induced in the heart is smaller than the threshold current required to produce ventricular fibrillation in humans. The specific absorption (SA) induced in the human body is considerably smaller than the value of 28.8 J/kg regulated by the ANSI.     

Transfer impedance and effectiveness of SMA receptacle for wideband measurement of discharge current due to human ESD

In order to investigate the effectiveness of an SMA receptacle as wideband measurement electrode for human ESD, we derived the transfer impedance of a 50-Ω SMA receptacle, and measured its frequency characteristics from 300 kHz to 20 GHz. With a 12-GHz digital oscilloscope, measurement of discharge currents through a hand-held metal bar from a charged human was made, and thereby the injected currents on the SMA receptacle were reconstructed from the measured transfer impedance. The results show that at a charge voltage of 1500 V the reconstructed current waveform agrees well with the observed voltage waveform divided by 50 Ω.     

快前沿纳秒高压脉冲源的开发及实验研究

 针对国际电工委员会1996年制定的IEC61000-2-9和美国国防部1999年修定的MIL-STD-461E标准提出的高空核爆电磁脉冲波形，研制了一台新型纳秒高压脉冲源。其产生的双指数波脉冲前沿小于3ns，脉宽58ns，幅度可达4kV，此外还可产生前沿小于2ns、幅度最高为4kV的脉冲方波；两种脉冲均可实现单次和间歇可调输出。介绍了脉冲源的电路设计和调试结果，通过实验对比了MIL-STD-461E与MIL-STD-461D两种双指数波形条件下某测控系统模块的干扰耦合效应。     

隧道场效应晶体管静电放电冲击特性研究

随着器件尺寸的不断减小,集成度的逐步提高,功耗成为了制约集成电路产业界发展的主要问题之一.由于通过引入带带隧穿机理可以实现更小的亚阈值斜率,隧道场效应晶体管(TFET)器件已成为下一代集成电路的最具竞争力的备选器件之一.但是TFET器件更薄的栅氧化层、更短的沟道长度容易使器件局部产生高的电流密度、电场密度和热量,使得其更容易遭受静电放电(ESD)冲击损伤.此外,TFET器件基于带带隧穿机理的全新工作原理也使得其ESD保护设计面临更多挑战.本文采用传输线脉冲的ESD测试方法深入分析了基本TFET器件在ESD冲击下器件开启、维持、泄放和击穿等过程的电流特性和工作机理.在此基础之上,给出了一种改进型TFET抗ESD冲击器件,通过在源端增加N型高掺杂区,有效的调节接触势垒形状,降低隧穿结的宽度,从而获得更好的ESD设计窗口.     

A fitting procedure for palaeodose from old sandstone using IRSL

In the dating studies of old samples using the Infrared Stimulated Luminescence (IRSL), the validity of the curve-fitting employed is of critical importance. So, in this study, a new fitting procedure was suggested for obtaining the age of the old geological sample. IRSL technique was applied using multiple-aliquot procedure to feldspar isolated from sample. The paleodose results obtained, using linear and polynomial fitting, were (67.98±2) Gy, (30.49±2) Gy and 322.03 Gy from the suggested fitting procedure. After application of this procedure the age was found to be 551.4 ka. This work was supported by Karaelmas University under the project numbered 98-101-009-01.     

高空核电磁脉冲模拟波形的双指数函数拟合法

 许多标准和公开出版物中都用双指数函数描述高空核电磁脉冲典型波形。通过数值方法，研究了双指数函数一项重要的性质。根据该性质，详细讨论了高空核电磁脉冲模拟波形数值拟合中，双指数函数特征参数与脉冲峰值、前沿、后沿以及半宽等物理参数的关系，从而提出一种简单有效的脉冲参数计算方法。通过IEC标准中规定的高空核电磁脉冲参数的估计与一个实测高空核电磁脉冲模拟波形的数值拟合，验证了该方法的有效性和可靠性。该方法能够适应多种峰值、前沿和半宽的高宽核电磁脉冲模拟波形的数值拟合。     

基于柔性屏蔽材料混响室的设计与应用

利用柔性屏蔽材料不平整性使屏蔽腔内场环境易于满足各向同性、均匀分布、随机极化统计特征的特点,研究了三种不同柔性屏蔽材料搭建的模式搅拌混响室的可行性。在Z字形搅拌器的作用下通过测量得到低频场均匀性和高频归一化电场的概率密度函数,根据IEC 61000-4-21-2011标准和理想混响室模型验证了所搭建混响室的有效性。在此基础之上,通过实验测量分析了搅拌器转速、天线高度、天线位置对归一化电场概率密度函数(PDF)的影响,并利用所搭建混响室对加载开孔电大金属腔的电磁屏蔽效能进行了测试。研究结果表明利用柔性屏蔽材料搭建混响室具有较好的可行性。