Photonic band structures of quadrangular multiconnected networks

By means of the network equation and generalized dimensionless Floquet-Bloch theorem,this paper investigates the properties of the band number and width for quadrangular multiconnected networks (QMNs) with a different number of connected waveguide segments (NCWSs) and various matching ratio of waveguide length (MRWL).It is found that all photonic bands are wide bands when the MRWL is integer.If the integer attribute of MRWL is broken,narrow bands will be created from the wide band near the centre of band structure.For two-segment-connected networks and three-segment-connected networks,it obtains a series of formulae of the band number and width.On the other hand,it proposes a so-called concept of two-segment-connected quantum subsystem and uses it to discuss the complexity of the band structures of QMNs.Based on these formulae,one can dominate the number,width and position of photonic bands within designed frequencies by adjusting the NCWS and MRWL.There would be potential applications for designing optical switches,optical narrow-band filters,dense wavelength-division-multiplexing devices and other correlative waveguide network devices.     

Design and fabrication of a high-performance evanescently coupled waveguide photodetector

In this paper, we present the design, fabrication, and measurement of an evanescently coupled waveguide photode- tector operating at 1.55 gm, which mainly comprises a diluted waveguide, a single-mode rib waveguide and a p-i-n photodiode with an extended optical matching layer. The optical characteristics of this structure are studied by using a three-dimensional finite-difference time-domain （3D FDTD） method. The photodetector exhibits a high 3-dB bandwidth of more than 35 GHz and a responsivity of 0.291 A/W at 1550 nm directly coupled with a cleaved fiber. Moreover, a linear response of more than 72-mW optical power is achieved, where a photocurrent of more than 21 mA is obtained at a reverse bias voltage of 3 V.     

Novel wavelength-accurate InP-based arrayed waveguide grating

A 13-channel, InP-based arrayed waveguide grating （AWG） is designed and fabricated in which the on-chip loss of the central channel is about -5 dB and the crosstalk is less than -23 dB in the center of the spectrum response. However, the central wavelength and channel spacing are deviated from the design values. To improve their accuracy, an optimized design is adopted to compensate the process error. As a result, the central wavelength 1549.9 nm and channel spacing 1.59 nm are obtained in the experiment, while their design values are 1549.32 nm and 1.6 nm, respectively. The route capability and thermo-optic characteristic of the AWG are also discussed in detail.     

Simulation and experiments for the Qext of a cavity beam position monitor

The external Q （Qext） of the dipole mode is a key parameter of the Cavity Beam Position Monitor （CBPM）. It determines the amplitude and length of the dipole mode signal. In this paper, Qext of a CBPM whose waveguides were open to the air was simulated and measured, and the results agreed with each other. Then four waveguide-to-coaxial cable adpaters were adjusted and assembled to the CBPM, and Qext remained unchanged. This progress provides a reliable method to evaluate Qext in the physics design without simulating the structurally complex adapters.     

Frequency-selective microwave polarization rotator using substrate-integrated waveguide cavities

A frequency selective polarization rotator that can rotate the polarization angle of an incident electromagnetic wave at the microwave frequency by 45 is presented. The polarization rotator is based on a two-dimensional periodic array of substrate integrated waveguide cavities, realizing the polarization rotation by coupling the input signal to the output wave through three metallic slots. Two layers of frequency selective surfaces are cascaded by substrate and form the polarization rotator. A vertical slot on the top layer is used to select the horizontal polarization from the incident wave, the vertical and the horizontal slots on the bottom layer are, respectively, used to obtain horizontally and vertically polarized outgoing waves. The two orthogonal outgoing waves are combined to result in the 45~ polarized wave. Both full wave simulation and experimental measurement are carried out, together validating the proposed method.     

Metallic nanowires for subwavelength waveguiding and nanophotonic devices

Plasmonics is a rapidly developing field concerning light manipulation at the nanoscale with many potential applications, of which plasmonic circuits are promising for future information technology. Plasmonic waveguides are fundamental elements for constructing plasmonic integrated circuits. Among the proposed different plasmonic waveguides, metallic nanowires have drawn much attention due to the highly confined electromagnetic waves and relatively low propagation loss. Here we review the recent research progress in the waveguiding characteristics of metallic nanowires and nanowire-based nanophotonic devices. Plasmon modes of both cylindrical and pentagonal metallic nanowires with and without substrate are discussed. Typical methods for exciting and detecting the plasmons in metallic nanowires are briefly summarized. Because of the multimode characteristic, the plasmon propagation and emission in the nanowire have many unique properties, benefiting the design of plasmonic devices. A few nanowire-based devices are highlighted, including quarter-wave plate, Fabry-Prot resonator, router and logic gates.     

Hybrid plasmon waveguides with metamaterial substrate and dielectric substrate:A contrastive study

Hybrid plasmon waveguides, respectively, with metamaterial substrate and dielectric substrate are investigated and analyzed contrastively with a numerical finite element method. Basic properties, including propagation length Lp, effective mode area Aeff, and energy distribution, are obtained and compared with waveguide geometric parameters at 1.55 gin. For the waveguide with metamaterial substrate, propagation length Lp increases to several tens of microns and effective mode area Aeff is reduced by more than 3 times. Moreover, the near field region is expanded, leading to potential applications in nanophotonics. Therefore, it could be very helpful for improving the integration density in optical chips and developing functional components on a nanometer scale for all optical integrated circuits.     

Transferring and Bounding Single Photon in Waveguide Controlled by Quantum Node Based on Atomic Ensemble

We study the scattering process of photons confined in a one-dimensional optical waveguide by a laser controlled atomic ensemble. The investigation leads to an alternative setup of quantum node controlling the coherent transfer of single photon in such one dimensional continuum. To exactly solve the effective scattering equations by using the discrete coordinate approach, we simulate the linear waveguide as a coupled resonator array at the high energy limit. We generally calculate the transmission eoet~cients and its vanishing at resonance reflects the good controllability of our scheme. We also show that there exist two bound states to describe the localize photons around the cavity.     

Preparation and characterization of nanosized GdxBi0.95-xVO4：0.05Eu3＋ solid solution as red phosphor

A complete solid solutions with monophasic zircon-type structure of vanadates of formula GdxBio.95-xVO4：0.05Eu3＋ （x = 04）.95） are synthesized by combined method of co-precipitation and hydrothermal synthesis. Their microstructures and morphologies are characterized by X-ray powder diffraction and transmission electronic microscope, and the results show that each of all the samples has a monophasic zircon-type structure. The absorption spectrum of the prepared phosphor shows a blue-shift of the fundamental absorption band edge with increasing the gadolinium content. Under UV-light and visible-light excitation, all the prepared phosphors show the typical luminescence properties of Eu3＋ in the zircon-type structure. The emission intensity of GdxBi0.95-xVO4：0.05Eu3＋ （x = 0.55） is strongest in all samples under UV-light and visible-light excitations. Finally, the mechanisms of luminescence of Eu3＋ in the GdxBi0.95-xVO4：0.05Eu3＋ （x = 0-0.95） solid solutions are analyzed and discussed.     

Electronic and Optical Properties of Rock-Salt AIN under High Pressure via First-Principles Analysis

Electronic and optical properties of rock-salt AIN under high pressure are investigated by first -principles method based on the plane-wave basis set. Analysis of band structures suggests that the rock-salt AIN has an indirect gap of 4.53 eV, which is in good agreement with other results. By investigating the effects of pressure on the energy gap, the different movement of conduction band at X point below and above 22.5 GPa is predicted. The optical properties including dielectric function, absorption, reflectivity, and refractive index are also calculated and analyzed. It is found that the rock-salt AIN is transparent from the partially ultra-violet to the visible light area and hardly does the transparence affected by the pressure. Furthermore, the curve of optical spectrum will shift to high energy area （blue shift） with increasing pressure.     

Analysis of flatband voltage shift of metallhigh-k/Si02/Si stack based on energy band alignment of entire gate stack

A theoretical model of flatband voltage （VFB） of metal/high-k/Si02/Si stack is proposed based on band alignment of entire gate stack, i.e., the VFB is obtained by simultaneously considering band alignments of metal/high-k, high-k/SiO2 and SiO2/Si interfaces, and their interactions. Then the VFB of TiN/HfO2/SiO2/Si stack is experimentally obtained and theoretically investigated by this model. The theoretical calculations are in good agreement with the experimental results. Furthermore, both positive VFB shift of TiN/HfO2/SiO2/Si stack and Fermi level pinning are successfully interpreted and attributed to the dielectric contact induced gap states at TiN/HfO2 and HfO2/SiO2 interfaces.     

Influence of different oxidants on the band alignment of HfO2 films deposited by atomic layer deposition

Based on X-ray photoelectron spectroscopy （XPS）, influences of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition （ALD） are investigated in this paper. The measured valence band offset （VBO） value for H2O-based HfO2 increases from 3.17 eV to 3.32 eV after annealing, whereas the VBO value for O3-based HfO2 decreases from 3.57 eV to 3.46 eV. The research results indicate that the silicate layer changes in different ways for H2O-based and O3-based HfO2 films after the annealing process, which plays a key role in generating the internal electric field formed by the dipoles. The variations of the dipoles at the interface between the HfO2 and SiO2 after annealing may lewd the VBO values of H2O-based and O3-based HfO2 to vary in different ways, which fits with the variation of fiat band （VFB） voltage.     

First-principles study of orbital ordering in cubic fluoride KCrF_3

Comprehensive first-principles calculations are performed to provide insight into the intriguing physical properties of the ternary cubic fluoride KCrF3. The electronic structures exhibit a prominent dependence on the effective local Coulomb interaction parameter Ueff. The ground state of the cubic phase is a ferromagnetic （FM） half-metal with Ueff equal to 0, 2, and 4 eV, whereas the insulating A-type antiferromagnetic （A-AFM） state with concomitant homogeneous orbital ordering is more robust than the FM state for Ueff exceeding 4 eV. We propose that the origin of the orbital ordering is purely electronic when the cooperative Jahn-Teller distortions are absent in cubic KCrF3.     

Energy band structure in optical of spin-1 condensates lattices

The energy band structure of spin-1 condensates with repulsive spimindependent and either ferromagnetic or antiferromagnetic spin-dependent interactions in one-dimensional （1D） periodic optical lattices is discussed. Within the two-mode approximation, Bloch bands of spin-1 condensates are presented. The results show that the Bloch bands exhibit a complex structure as the atom density of mF = 0 hyperfine state increases： bands splitting, reversion, intersection and loop structure are excited subsequently. The complex band structure should be related to the tunneling and spin-mixing dynamics.     

Effect of post-thermal and optical properties annealing on the structural of ZnO thin films prepared from a polymer precursor

ZnO thin films were synthesised by a new method which uses polyvinyl alcohol （PVA） as the polymer precursor. The films are annealed at different temperatures and for different annealing times. The structural parameters, like grain size, lattice constants, optical band gap, and Urbach energy, depend on the annealing temperature and time. All the films possess tensile strain, which relaxes as the annealing temperature and time increase. The photoluminescence （PL） spectra contain only ultraviolet （UV） peaks at low temperature, but as the annealing temperature and time increase, we observe peaks at the blue and green regions with a variation in the intensities of these peaks with annealing temperature and time.     

Co-evolution of the brand effect and competitiveness in evolving networks

The principle that ‘the brand effect is attractive’ underlies the preferential attachment. Here we show that the brand effect is just one dimension of attractiveness. Another dimension is competitiveness. We firstly introduce a general framework that allows us to investigate the competitive aspect of real networks, instead of simply preferring popular nodes. Our model accurately describes the evolution of social and technological networks. The phenomenon that more competitive nodes become richer can help us to understand the evolution of many competitive systems in nature and society. In general,the paper provides an explicit analytical expression of degree distributions of the network. In particular, the model yields a nontrivial time evolution of nodes’ properties and the scale-free behavior with exponents depending on the microscopic parameters characterizing the competition rules. Secondly, through theoretical analyses and numerical simulations, we reveal that our model has not only the universality for the homogeneous weighted network, but also the character for the heterogeneous weighted network. Thirdly, we also develop a model based on the profit-driven mechanism. It can better describe the observed phenomenon in enterprise cooperation networks. We show that the standard preferential attachment,the growing random graph, the initial attractiveness model, the fitness model, and weighted networks can all be seen as degenerate cases of our model.     

Stacking stability of MoS_2 bilayer: An ab initio study

The study of the stacking stability of bilayer MoS2 is essential since a bilayer has exhibited advantages over single layer MoS2 in many aspects for nanoelectronic applications. We explored the relative stability, optimal sliding path between different stacking orders of bilayer MoS2, and （especially） the effect of inter-layer stress, by combining first-principles density functional total energy calculations and the climbing-image nudge-elastic-band （CI-NEB） method. Among five typical stacking orders, which can be categorized into two kinds （I： AA＇, AB and II： AA＇, AB＇, A＇B）, we found that stacking orders with Mo and S superposing from both layers, such as AA＇ and AB, is more stable than the others. With smaller computational efforts than potential energy profile searching, we can study the effect of inter-layer stress on the stacking stability. Under isobaric condition, the sliding barrier increases by a few eV/（uc.GPa） from AA＇ to ABt, compared to 0.1 eV/（uc.GPa） from AB to [AB]. Moreover, we found that interlayer compressive stress can help enhance the transport properties of AA＇. This study can help understand why inter-layer stress by dielectric gating materials can be an effective means to improving MoS2 on nanoelectronic applications.     

Particle-number conserving analysis of the high-K multi-quasiparticle bands in 179Re

The experimentally observed ten rotational bands in 179Re are analyzed with the particle-number conserving method for treating the cranked shell model with pairing interaction, in which the blocking effects are taken into account exactly. The experimental moments of inertia of these bands are reproduced quite well by our calculations with no free parameter and the deformation driving effects are discussed. The bandhead energies and the variation in the occupation probability of each cranked orbital are also analyzed.     

Physical Properties of III-Antiminodes -- a First Principles Study

A comprehensive first principles study of III-Antimonide binary compounds is hardly found in literature. We report a broad study of structural and electronic properties of boron antimonide （BSb）, aluminium antimonide （AlSb）, gallium antimonide （GaSb） and indium antimonide （InSb） in zineblende phase based on density functional theory （DFT）. Our calculations are based on Full-PotentiM Lineaxized Augmented Plane wave plus local orbitals （FP- L（APWq-lo）） method. Different forms of exchange-correlation energy functional and corresponding potential are employed for structural and electronic properties. Our computed results for lattice parameters, bulk moduli, their pressure derivatives, and cohesive energy are consistent with the available experimental data. Boron antimonide is found to be the hardest compound of this group. For band structure calculations, in addition to LDA and GGA, we used GGA-EV, an approximation employed by Engel and Vosko. The band gap results with GGA-EV are of significant improvement over the earlier work.     

Suppression of Anti-resonant Effect in Presence of Band Overlap

By exact resolution of coupled ideal chains connecting an extra side site, we show that the so-called ＂anti-resonant effect＂ is suppressed when the electron energy is inside the overlap region of extended bands of the ideal tight-binding chains. When the electronic energy is outside the band overlap region, the existence of ＂anti-resonant effect＂ is tuned by details of local connectivity around the extra side site and can be suppressed by introduction of magnetic flux.