三元混晶四层系统的表面和界面声子极化激元

运用改进的无规元素等位移模型和玻恩-黄近似,结合电磁场的麦克斯韦方程和边界条件,研究了真空/极性二元晶体薄膜/极性三元混晶薄膜/极性二元晶体衬底四层系统的表面和界面声子极化激元.以AlxGa1-xAs/GaAs和ZnxCd1-xSe/ZnSe为例,获得了表面和界面声子极化激元模的色散关系以及表面模和界面模的频率随混晶组分和薄膜厚度的变化关系.结果表明,三元混晶四层异质结系统中存在七支表面和界面声子极化激元模,且这七支表面模和界面模的频率随混晶组分和薄膜厚度呈非线性变化,三元混晶的"单模"和"双模"性也在色散曲线中得到了很好的体现.     

六方系InAlGaN晶体的长波长光学声子研究

利用拉曼散射实验方法对六方系InAlGaN晶体的光学声子进行了测量,同时利用修正随机元素同向位移模型对其光学声子与组分的关系进行了理论模拟。结果表明InAlGaN晶体的E₁与A₁光学声子分支都表现为单模行为,测量得到的In_xGa_0.45-xAl_0.55N晶体的A₁(LO)声子与计算结果一致。对In_xAl_0.42-xGa_0.58N晶体的A₁(LO)声子的计算结果与Cros的测量结果进行了对比,两者也相符。     

磷化物三元混晶中电子-声子相互作用的维度和体积效应

考虑电子-声子耦合强度因维度而异,导出了描述三维、二维和一维混晶中电子-声子相互作用的哈密顿量。考虑构成三元混晶的两种二元晶体的晶格失配会使混晶体积随元素组分比改变,在推导三维、二维和一维三元混晶中极化子自陷能量和重整化有效质量时计入了离子相对位移与二元晶体原胞体积的关系。结果表明:磷化物三元混晶中极化子自陷能量和重整化有效质量随元素组分的变化关系呈明显的非线性特征,对晶格适配明显、电子-声子耦合较强的材料,体积效应不可忽略。维度越低,非线性特征和体积效应越明显。     

纤锌矿MgxZn1-xO/Mg0.3Zn0.7O抛物量子阱中极化子能级

采用改进的Lee-Low-Pines(LLP)中间耦合方法研究纤锌矿Mg x Zn1-x O/Mg0.3Zn0.7O抛物量子阱材料中的极化子能级,给出极化子基态能量、跃迁能量(第一激发态到基态)和不同支长波光学声子对电子态能级的贡献随量子阱宽度d的变化规律。理论计算中考虑了纤锌矿Mg x Zn1-x O/Mg0.3Zn0.7O抛物量子阱材料中声子模的各向异性和介电常数、声子(类LO和类TO)频率等随空间坐标Z变化(SD)效应对极化子能量的影响。结果表明,Mg x Zn1-x O/Mg0.3Zn0.7O抛物量子阱中电子与长波光学声子相互作用对极化子能级的移动很大,使得极化子能量明显降低。阱宽较小时,半空间长波光学声子对极化子能量的贡献较大,而定域长波光学声子的贡献较小;阱宽较大时,情况则正好相反。在d的变化范围内,电子与长波光学声子相互作用对极化子能级的移动(约67~79 meV)比Al x Ga1-x As/Al0.3Ga0.7As抛物量子阱中的相应值(约1.8~3.2 meV)大得多。因此,讨论ZnO基量子阱中电子态问题时要考虑电子与长波光学声子的相互作用。     

GaxIn1—xP混晶的拉曼散射研究

本文报道了Ga_xIn_(1-x)P混晶的室温拉曼散射和X射线衍射的测试结果。所用的样品用MOCVD方法生长在<100>晶向的GaAs衬底上。混晶组分x值在0.54～0.95之间。实验结果表明,Ga_xIn_(1-x)P混晶的长波长光学声子谱呈现修正的双模行为,具有类GaP和类InP两个光学支。     

混晶GaAs1-xPx：N中Nx发光的声子伴线结构

本文采用荧光窄化技术,对低组分的GaAs1-xPx:N(x=0.76,0.65)混晶材料中Nx束缚激子的声子伴线进行了研究.在低温下,选择激发Nx带时,我们得到了与GaP:N低温发光谱中类似的声子伴线结构.根据实验结果,给出了混晶中各种声子的能量.另外,对组分为x=0.76的GaAs1-xPx:N混晶样品,我们还首次观察并分析了多声子重现光谱.     

声子色散和磁场对极性晶体中极化子自陷能的影响

利用线性组合算符和幺正变换相结合的方法,研究了声子色散和磁场对极性晶体中极化子振动频率和自陷能的影响.计及纵光学(LO)声子色散,在抛物近似下导出了极性晶体中极化子自陷能随电子-纵光学声子耦合常数、回旋共振频率和声子色散系数之间的变化关系.数值计算结果表明极化子自陷能随电子-纵光学声子耦合常数、回旋共振频率和声子色散系数的增大而增大.     

量子阱中极化子的声子平均数

采用有效质量近似下的变分法,考虑到电子同时与表面光学声子和体纵光学声子相互作用,研究了无限深量子阱中极化子的表面光学声子平均数,体纵光学声子平均数和光学声子平均数。讨论了电子与体纵光学声子耦合强度α,阱宽L和势垒材料Al_xGa_1-xAs中Al的含量x对上述光学声子平均数的影响。以GaAs/Al_xGa_1-xAs量子阱为例进行了数值计算。结果表明:量子阱中表面光学声子平均数随耦合强度α,阱宽L和Al含量x增大而增大。量子阱中体纵光学声子平均数随耦合强度α,阱宽L的增大而增大。光学声子平均数随耦合强度α,阱宽L和Al含量x的增大而增大。     

表面磁极化子的光学声子平均数

采用Tokuda改进的线性组合算符、Lagrange乘子和变分法,讨论了强、弱耦合表面磁极化子的性质。计算了极化子的基态能量和光学声子平均数。以AgCl和ZnS晶体为例进行了数值计算。讨论了表面磁极化子振 动频率、基态能量和光学声子平均数与磁场B和拉格朗日乘子u的关系。     

声子色散对极性晶体中磁极化子基态能量的影响

利用线性组合算符和幺正变换相结合的方法,研究了声子色散对极性晶体中磁极化子基态能量的影响.计及纵光学(LO)声子色散,在抛物近似下导出了极性晶体中磁极化子基态能量随电子-纵光学声子耦合常数、回旋共振频率和声子色散系数的变化关系.数值计算结果表明磁极化子基态能量随声子色散系数和电子-纵光学声子耦合常数的增大而减小,随回旋共振频率增大而增大.     

Low frequency phonon spectra of mixed crystal CdxHg1−xTe

Far infrared absorption spectra for the mixed crystal Cd_xHg_1?xTe with x=0.18 to 0.45 in the wavenumber region of 10 to 400cm^?1 and temperature region of 4.5 to 300K are reported. A low frequency absorption band has been found between 20 and 50 cm^?1 for all the samples which have been measured in addition to the two-phonon bands in both sides of the reststrahlen absorption bands of the material. By comparison with the phonon densities of states estimated from the phonon frequencies of CdTe, we have attributed this band to TA band modes induced by the disorder and “impurity” effects.     

Cd1-xMnxTe混晶的远红外吸收光谱

本文报道4.2—300K和20—400cm^-1范围内不同组份的Cd_1-xMn_xTe混晶远红外声子吸收光谱的研究结果。实验分辨了类CdTe,类MnTe剩余射线带及其TO-LO分裂,首次观察到位于混晶剩余射线吸收区内侧的低频吸收带、低x值情况下的准定域模吸收峰及其两侧的诸双声子吸收带。用缺陷晶格动力学理论估计了准定域模的出现及位置,讨论了其他吸收带的物理起源和判定。 关键词：     

Optical vibration modes and electron－phonon interaction in ternary mixed crystals of polar semiconductors

Optical vibrations of the lattice and the electron－phonon interaction in polar ternary mixed crystals are studied in the framework of the continuum model of Born and Huang and the random-element-isodisplacement model. A normal-coordinate system to describe the optical vibration in ternary mixed crystals is correctly adopted to derive a new Fr?hlich-like Hamiltonian for the electron－phonon interaction including the unit-cell volume variation influence. The numerical results for the phonon modes, the electron－phonon coupling constants and the polaronic energies for several typical materials are obtained. It is verified that the nonlinearity of the electron－phonon coupling effects with the composition is essential and the unit-cell volume effects cannot be neglected for most ternary mixed crystals.     

Research of band gap properties based on two-dimensional photonic crystal with mixed shapes of rods

Two new structures of photonic crystals were designed. The band gap properties of photonic crystals with square and circular dielectric rods mixed arrangement are researched. The band gap properties of mixed shapes rods photonic crystal are calculated and compared with the crystals with square rods or round rods by using plane wave expansion method. Simulation results show that for the square lattice, mixed shapes of rods make the higher-order bands of TM modes moving toward the low frequency range. The gap bands’ widths and locations are between the parameters of square and round rods photonic crystal. In triangle lattice, a significant band gap is presented in photonic crystal with mixed shapes of rods in TE mode, while it is almost not presented in square and round rods crystals. The phenomenon of bands moving toward the low frequency range is also found in the triangle lattice mixed shapes rods photonic crystal. The reasons of the results in the vision were analyzed.     

三元硅化物CaAlSi的电-声子耦合和超导电性研究

应用全势线性缀加平面波方法计算新超导体CaAlSi的电子能带结构,用带心冻结声子法计算了声子频率及电声子耦合常数,并讨论了它们的超导电性.考虑到Al,Si原子分布的无序性和完全等价性,我们采用了双层超格子原胞模型,并考虑了低频B1g1声子频率的非谐性效应.由此计算得到稳定的低频B1g1声子频率为110cm-1,对超导电性有较大的贡献的Cad态电子与B1g1振动模式间的电声子耦合常数为0.37.我们的结果与用虚晶近似的结果是一致的.并证明CaAlSi的超导电性可由中等耦合的BCS理论来解释.     

KTiOPO4晶体的太赫兹光学声子振荡特性研究

采用超快半导体光电导开关的宽带太赫兹时域频谱系统,研究了 KTiOPO4 晶体在0.5～2.0THz波段的光学声子振荡特性;在晶体z轴平行于THz波电场振动方向时发现了明显的吸收峰.利用晶体中晶格振动模式（光学声子）对光谱的选择性吸收特性和多洛仑兹振子伪谐振介电模型,很好地拟合了KTP晶体的复介电常量曲线,得到了对应晶格弱振动的光学声子的频谱参量值.研究结果表明,位于ω1 /2π=1.76 THz的吸收峰是KTP晶体中沿z轴排列的K+相对于PO4和TiO6晶格振动造成的光学外振动模.同时也说明THz波对于晶格弱振动非常敏感,对于微弱的光学声子吸收峰的频谱分析更加精准.     

KH_2PO_4晶体的太赫兹-紫外光谱

实验测量了室温下磷酸二氢钾KH2PO4(KDP)晶体0.2～1.6THz的时域光谱,以及50～4000cm-1范围内的远红外光谱,200～2000nm的紫外-可见-红外光谱。KDP晶体的禁带宽度是5.91eV。在测量范围内有一个很宽的声子吸收带。从0.2～205.5THz吸收系数在35～80cm-1,声子吸收的低频端小于0.2THz。最高的纵光学模声子的频率νLO大约是205.5THz,由此求出这支声子的H—O键的力常数为13.13N·cm-1。     

Infrared lattice absorption spectra of zinc selenide doped with beryllium

Infrared localized mode sidebands due to the combined excitation of the localized mode and the host lattice modes are observed for ZnSe:Be. Two bands are obtained in the acoustic band mode region. The band at 105 cm^-1 is assigned to a resonant mode and the band at 72 cm^-1 is attributed to the impurity activated TA(X) phonon.     

Photoluminescence and resonant Raman scattering in N-doped ZnO thin films

A combination of studies on photoluminescence and resonant Raman scattering in N-doped ZnO thin films were carried out at room temperature. In the photoluminescence spectra, a transformation of radiative recombination mechanism from free-exciton to donor-acceptor-pair transition was observed. An enhancement of resonant Raman scattering processes as well as longitudinal optical (LO) phonon overtones up to the sixth order were observed in the Raman spectra. Also, the nature of the 1LO phonon underwent a transformation from a pure A₁(LO) mode to a quasimode with mixed A₁ and E₁ symmetry. The underlying mechanisms accounting for the influences of N doping on the optical properties of ZnO were related to the incorporation of extrinsic defects in the crystal lattice.     

Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition

Mn-doped GaN epitaxial films were grown by metal organic chemical vapour deposition （MOCVD）. Microstructural properties of films are investigated using Raman scattering. It is found that with increasing Mn-dopants levels, longitudinal optical phonon mode A1 （LO） of films is broadened and shifted towards lower frequency. This phenomenon possibly derives from the difference in bonding strength between Ga-N pairs and Mn-N pairs in host lattice. In addition, optical properties of films are investigated using cathodoluminescence and absorption spectroscopy. Mn-related both emission band around 3.0eV and absorption bands around 1.5 and 2.95eV are observed. By studies on structural and optical properties of Mn-doped GaN, we find that Mn ions substitute for Ga sites in host lattice. However, carrier-mediated ferromagnetic exchange seems unlikely due to deep levels of Mn acceptors.