金刚石薄膜的蓝光发射

利用氮化铝陶瓷作为衬底，在不同甲烷与氢气的配比流量下，利用热丝ＣＶＤ方法制备了一个系列的金刚石薄膜，通过测量样品在４３０ｎｍ处的光致荧光（ＰＬ）谱及其Ｒａｍａｎ光谱，给出了金刚石薄膜的结构与生长信息，薄膜ＰＬ强度随甲烷浓度增加到３％时达到最大，继续增加了甲烷浓度ＰＬ强度下降。     

多孔氧化铝膜的荧光研究

采用电化学方法在草酸溶液中制备铝基多孔阳极氧化铝膜,用原子力显微镜观察其形貌,得到平均孔径为 38 nm的有序排列.用F-4500型荧光分光光度计测量其三维荧光谱,与未经氧化的铝片作对比,发现前者的激发谱在280 nm~340 nm有一个较宽的谱带,并且在253.8 nm附近有一个肩峰,发射谱有一个以417.4 nm为峰值的较宽谱带,而后者却无任何明显的发射峰和激发峰.再分别用波长为248 nm的准分子激光器和波长355 nm的三倍频YAG激光器激发,得到明亮的蓝光光谱,在同样条件下激发未经阳极氧化的高纯铝片,将二者的光致发光谱进行对比处理.实验认为,这种发光机理可能是来源于薄膜中与氧空位有关的缺陷态,而且,在成膜过程中伴随着草酸根离子的介入,导致多孔阳极氧化铝膜中亦有与草酸根离子相关的发光中心,同时,量子限域效应也使氧化铝薄膜的光学性质发生了变化.     

超声射流冷却PH2自由基的激光诱导荧光谱

在４９０－５００ｎｍ波长范围内观测了超声射流冷却ＰＨ２自由基的激光诱导荧光激发谱，得到了在转动Ｋ的情况下ＰＨ２Ａ＾２Ａ１←Ｘ２Ｂ１适中（０，０，０）←（０，０，０），（０，１，０）←（０，０，０）和（０，２，０）←（０，０，０）三个振动谱带的转动分辨光谱，对这三个谱带中的约２２０条转动谱线进行了归属，其中５２条谱线是我们新标识的。从转动结构，我们获得了气相ＰＨ２自由基的全部分子常数，其中εｂｂ，ε     

双光路同向起偏测量含金属阳极氧化铝膜的消光比

用阳极氧化的方法制备了阳极氧化铝膜,向其孔中分别镀入了铜和银,利用UV-3101型分光光度计测试了其透射光谱和偏振光谱,并研究了样品的偏振特性与入射角的关系.实验结果表明,这种含金属阳极氧化铝膜在近红外波段表现出良好的消光比,且入射角的大小对其消光比有着明显的影响.     

YAG晶体中Cr4+和Yb3+的光谱和荧光特性研究

报道了（Ｃｒ＾４＋,Ｙｂ＾３＋）：ＹＡＧ晶体的吸收光谱和荧光光谱特性。在室温下,（Ｃｒ＾４＋,Ｙｂ＾３＋）：ＹＡＧ晶体在９３７ｎｍ和９６８ｎｍ处存在两个吸收带,能与ＩｎＧａＡｓ激光二级管有效耦合：而且在１０３０ｎｍ处有一Ｃｒ＾４＋吸收峰,可以实现对Ｙｂ＾３＋的自调Ｑ激光输出。（Ｃｒ＾＋,Ｙｂ＾３＋）：ＹＡＧ 荧光光谱与Ｙｂ＾３＋：ＹＡＧ晶体一样,发光中心也是位于１０２９ｎｍ,但其强度比Ｙｂ＾３＋：     

多孔铝激光染料镶嵌膜的荧光光谱研究

以多孔阳极氧化铝为基底,将激光染料分子RhB有效地嵌入多孔铝的孔中,获得多孔铝激光染料镶嵌膜。镶嵌膜的荧光光谱类似于低浓度液相染料的荧光光谱,但光谱线型更趋于对称。通过改变多孔铝孔的直径和深度及染料溶液深度,研究光谱的变化关系,初步提出了多也铝镶嵌染料膜的理想模型。     

有机纳米分子聚集体PIC-I的Raman光谱研究

本文从分子聚集体ＰＩＣ－Ｉ的吸收光谱可观测到Ｊ－带的红移和窄化,并可算出１３６８ｃｍ－１振模,以及本实验条件下聚集体单体数目为Ｎ≈３链长为３×０．３ｎｍ＝０．９ｎｍ。测量了ＰＩＣ－Ｉ聚集体的荧光光谱,将它与吸收光谱相比较可以看出,聚集体吸收带（５７２．５ｎｍ）和荧光发射带（５７２．５ｎｍ）是共振的。系统地研究了ＰＩＣ－Ｉ聚集体的喇曼光谱（１００～１８００ｃｍ－１）,验证了振动模 １３６８ｃｍ－１的存在。     

有机抽提对泥炭中的木栓质体荧光光谱特性的影响

对泥炭中的木栓质体及泥炭有机抽提残渣中的木栓质进行了荧光（光谱）对比研究，研究发现有机抽提对泥炭中的木栓质体的荧光（光谱）性影响很大，有机抽提前泥炭中的木栓质体发鲜艳的黄绿至绿色荧光：λｍａｘ＝４７０～５２０ｎｍ；Ｑ６５０／５００＝０．１０～０．５４。有机抽提后泥炭中的木栓质体则发暗黄色橙黄色荧光：λｍａｘ＝６０５～６６０ｎｍ，Ｑ６５０／５００＝１．８５～４．０９，有机抽提使木栓质体的荧光强度（Ｉ     

NO2分子589.3～594.0 nm荧光激发谱转动分析

本文报道了实验测定的ＮＯ２分子在５８９．３￣５９４．０ｎｍ范围的高分辨荧光激发谱,对其中１１个振动带较完整的转动分析表明,荧光谱线主要来自＾２Ｂ２（Ｋ＝０）→＾２Ａ１（Ｋ＝０）的平行跃迁,得到了各带光谱数,并对光谱结构复杂性进行了讨论。     

LB膜中混合聚集体的光致荧光特性研究

研究了不同活性分子（半花菁和氐盐）混合聚集体的形成以及紫外光照射对ＬＢ交替多层膜光致荧光（ＰＬ）特性的影响。在半花菁和氐盐混合的ＬＢ膜中,由于不同分子间较强的相互作用使混合膜的荧光光谱较纯半花菁和氐盐分子膜分别发生了蓝移和红移。利用紫外光照射可以使分子的聚集体部分分解甚至破坏分子的结构,导致光致荧光强度明显减弱。     

The investigation of photoluminescence centers in porous alumina membranes

To investigate the origin of blue photoluminescence (PL) in porous alumina membrane, we have prepared an anodic aluminum oxide film with a pore diameter of 40 nm in oxalic acid solution by a two-step anodization process. Our results show that the as-prepared alumina membrane is amorphous and exhibits a broad emission band peaking at around 452 nm with two sub-peaks located at 443 nm and 470 nm. As indicated by the PL excitation spectra, there are two excitation peaks which can account for the sub-peaks observed in the PL emission band. We have proposed that the broad emission band with two sub-peaks can be attributed to two luminescence centers in porous alumina membranes, namely, oxygen defects and oxalic impurities. Furthermore, we have rationalized that the two emission centers show similar influence on the PL band in the blue region based on a simple model. PACS 81.07.-b; 81.16.Dn; 79.60.Jv     

石英衬底阳极氧化铝膜的制备及其光致发光的研究

报道了用15wt％H2SO4为电解液,在恒温0℃,40V电压条件下制备阳极氧化铝膜,用原子力显微镜观察其形貌,表明在简单条件下在石英衬底上制备了致密的氧化铝微晶膜。研究了不同电压条件下制备的氧化铝膜的常温光致发光,并监测了其激发光谱,发现其常温光致发光相对强度和发射峰位置与阳极氧化电压关系密切,有相对强度变小和发射峰位置红移的趋势,在40V电压条件下出现了356nm新的发射峰,而其不同的发射峰激发光谱都为210nm,说明其来源存在关联。详细分析了40V电压下的阳极氧化铝膜中出现的356,386nm近紫外发射,并认为其发光来源于与F心和F^ 心有关的氧缺陷。     

Influence of excitation light wavelength on the photoluminescence properties for ZnO films prepared by magnetron sputtering

Highly orientated polycrystalline ZnO films were deposited on sapphire, silicon and quartz substrates at room temperature by r.f. magnetron sputtering. Different photoluminescence (PL) spectra were observed when excited with different wavelength light. A UV emission peak (356 nm) and a blue peak (446 nm) were generated for the films on sapphire, silicon and quartz substrates, and only the 446 nm blue emission appeared for the films on glass substrates when the wavelength of the excitation light was 270 nm. With increasing the wavelength of the excitation light up to 300 and 320 nm, the UV emission disappeared for films on various substrates and the wavelength of the PL peaks increased up to 488 and 516 nm, respectively. When the wavelength of the excitation light increased to 398 nm, the PL spectrum becomes a wide band that is consistent with three emission peaks.     

不同退火条件对纳米多孔氧化铝薄膜光致发光的影响

以草酸为电解液,采用二次阳极氧化法制备出了纳米多孔氧化铝薄膜,经不同退火温度和退火气氛处理氧化铝薄膜后,通过分析其光致发光光谱得出：相同的退火气氛中, 退火温度T≤600 ℃ 时,T=500 ℃具有最大的光致发光强度;退火温度T≥700 ℃时,随着退火温度的升高,样品的发光强度增大。在不同的退火气氛中,多孔氧化铝薄膜随着退火温度的升高,发光峰位改变不同,即在空气中退火处理后,随着退火温度的升高,发光峰位蓝移,而在真空中退火处理后,发光峰位并不随退火温度的升高而变化;通过对1 100 ℃高温退火处理后的氧化铝薄膜的光致发光曲线的高斯拟合,可以看出,经退火处理后的多孔氧化铝,主要存在三个发光中心,发光曲线在350～600 nm范围内对应三个发射峰, 发射波长分别为387,410,439 nm。相同的退火温度下,空气中退火得到的氧化铝薄膜的光致发光强度大于真空中退火处理后的氧化铝薄膜。基于实验结果,结合X射线色散能谱(EDS)、红外反射光谱等表征手段,探讨了多孔氧化铝薄膜的发光机制,并对经过不同退火条件得到的多孔氧化铝薄膜的光致发光特性的改变做出了合理的解释。     

Photoluminescent behavior of heat-treated porous alumina films formed in malonic acid

In the present work IR spectroscopy, electron probe microanalysis (EPMA) and photoluminescence (PL) spectral measurements were applied to study the effect of treatment temperature (T) on compositional and luminescent properties of malonic acid alumina films. Our studies have shown that the heat treatment of anodic alumina films at investigated temperatures from 100 up to 700 °C changes their photoluminescence spectra considerably. An increase in T results in the PL intensity growth. When reaching its maximum at 600 °C the luminescence intensity then decreases drastically with further T growth. The films heat-treated at 500 and 600 °C demonstrate asymmetrical PL band with Gaussian peaks at 437 and 502 nm. We proved that the malonic acid species incorporated into the alumina bulk during the film formation are responsible for photoluminescence band with its peak at 437 nm.     

LiGaO2衬底上ZnO外延膜的结构与光学特性

采用磁控溅射法在(001),(100)及(010)LiGaO2衬底上制备了ZnO薄膜,通过X射线衍射(XRD)、原子力显微镜(AFM)、透过光谱以及光致发光谱(PL)对薄膜的结构、形貌及光学性质进行了表征.结果表明LiGaO2衬底不同晶面上制备的ZnO薄膜具有不同的择优取向,在(001)、(100)及(010)LiGaO2上分别获得了[001]、[1100]及[1120]取向的ZnO薄膜;不同取向的ZnO薄膜表面形貌差异较大;薄膜在可见光波段具有较高的透过率;在ZnO薄膜的光致发光谱中只观察到了位于378 nm的紫外发射峰,而深能级发射几乎观察不到,(1100)取向的薄膜紫外发射峰强度最大,半高宽也最小,薄膜光致发光件质的差异丰要和晶粒尺寸有关.     

The effect of annealing on the photoluminescent and optical properties of porous anodic alumina films formed in sulfamic acid

Photoluminescent and optical properties of porous oxide films formed by two-step aluminum anodization at a constant potential of 30 V in sulfamic acid have been investigated after their annealing, ranging from room temperature up to 600 °C. X-ray diffraction reveals the amorphous nature of porous oxide films. Infrared and energy dispersive spectroscopy indicates the presence of sulfuric species incorporated in oxide films during the anodization. Photoluminescence (PL) measurements show PL bands in the range from 320 to 600 nm. There are two peaks in emission and excitation spectra. One emission peak is at constant wavelength centered at 460 nm and the other shifts from 390 to 475 nm, depending on excitation wavelength. For excitation spectra, one spectral peak is at constant wavelength at 270 nm and the other also shifts to longer wavelengths while increasing emission wavelength. Upon annealing of the as-prepared oxide films PL increases reaching maximum value at about 300 °C and then decreases. The results indicate the existence of two PL centers, one placed at surface of the pore wall, while the other positioned inside the oxide films.     

Initial study on the structure and photoluminescence properties of SiC films doped with Al

SiC films doped with aluminum (Al) were prepared by the rf-magnetron sputtering technique on p-Si substrates with a composite target of a single crystalline SiC containing several Al pieces on the surface. The as-deposited films were annealed in the temperature range of 400-800 °C under nitrogen ambient. The thin films have been characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy (SEM). The results show that the introduction of Al into films hinders crystalline formation process. And with the increase of annealing temperature, more Si particles are formed in the films, which strongly affect the optical absorption properties. The photoluminescence (PL) spectra of the samples show two peaks at 370 nm and 412 nm. The intensities of the PL peaks are evidently improved after Al doped. We attribute the origin of the two PL peaks to a kind of Si-related defect centres. The obtained results are expected to have important applications in modern optoelectronic devices.     

硫代铝酸钡(BaAl_2S_4:Eu)靶材制备工艺研究

为制备薄膜无机电致发光显示器件中的硫代铝酸钡(BaAl2S4:Eu)蓝色发光层薄膜,采用粉末烧结的方法,经过对BaS,Al2S3,等原材料的粉碎、研磨、高温烧结,以及热压等过程,制备出用于溅射镀制BaAl2S4:Eu蓝色发光层薄膜的靶材样品。对制备的BaAl2S4:Eu发光层薄膜进行的光致发光分析表明,在300nm紫外光激发下,薄膜能够发射出峰值位于470nm处的蓝光。对发光层薄膜的XPS分析结果表明,发光层薄膜中含氧量较高,随着溅射功率的提高,薄膜中铝元素有显著增加;而随着淀积压强的增大,硫元素则显著减少。     

氧气分压对反应溅射制备TiO2薄膜带隙的影响

在不同的氧气分压下 ,用直流反应磁控溅射法制备了玻璃基TiO2 薄膜试样 ,测试了试样的荧光发射光谱。结果表明 ,氧气分压为 0 35和 0 6 5Pa时 ,荧光光谱在 370 ,4 72和 5 14nm处出现发射峰 ;氧气分压为 0 10和 0 15Pa时 ,发射光谱峰出现在 370和 4 90nm处。试样带隙为 3 35eV。0 35和 0 6 5Pa氧气分压下溅射的试样在带隙中有两个分别低于导带底 0 72和 0 94eV的缺陷能级 ,0 10和 0 15Pa氧气分压下溅射的试样在带隙中有一个位于导带底 0 2 3和 1 2 9eV之间的缺陷能带 ;增加氧气分压 ,缺陷能带转变成两个缺陷能级 ,在 0 6 5Pa氧气分压下 ,缺陷能级几乎消失。