Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs |
| |
Authors: | Lü Hong-Liang Zhang Yi-Men Zhang Yu-Ming Che Yong |
| |
Institution: | Engineering College of Armed Police Force, Xi'an
710086, China; Microelectronics Institute, Key Laboratory of
Wide Band-Gap Semiconductor Materials and Devices of the Ministry of
Education, Xidian University, Xi'an 710071, China |
| |
Abstract: | A thermal model of 4H-SiC MESFET is developed based on the
temperature dependences of material parameters and three-region $I-V$
model. The static current characteristics of 4H-SiC MESFET have been
obtained with the consideration of the self-heating effect on related
parameters including electron mobility, saturation velocity and
thermal conductivity. High voltage performances are analysed using
equivalent thermal conductivity model. Using the physical-based
simulations, we studied the dependence of self-heating temperature on
the thickness and doping of substrate. The obtained results can be
used for optimization of the thermal design of the SiC-based
high-power field effect transistors. |
| |
Keywords: | 4H-SiC MESFET self-heating analytic model |
|
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |
|