Anisotropic energy distribution of sputtered atoms induced by low energy heavy ion bombardment

The theory of anisotropic sputtering published in Phys. Rev. B 71(2), 026101 (2005) and Radiat. Effects Defects Solids 159(5), 301 (2004) has been modified and used to calculate the sputtering yield energy distributions for copper, tungsten, and aluminum targets bombarded by low-energy argon ion. As usual, the electronic stopping is ignored in the analysis. The present theory (modified Sigmund’s theory) has been shown to fit the corresponding experimental results of sputtering yield energy distributions well, except for the cases where the larger ion incident angle and larger sputtering emission angles were considered. The larger discrepancy between the present theory and the experimental result in the latter cases is probably due to the influence of direct recoil atoms on the energy spectrum. Compared with Falcone’s analytical theory, the present theory can reproduce much better experimental results of sputtering phenomena. The fact clearly demonstrates the intrinsic relation between the ion–energy dependence of the total sputtering yield and the sputtering yield energy distribution and suggests the great importance of momentum deposited on the target surface in the physical sputtering     

ADATOM, VACANCY AND SPUTTERING YIELDS OF ENERGETIC Pt ATOMS IMPACTING ON Pt(100) BY MOLECULAR DYNAMICS SIMULATION

We have studied the influence of incident atoms with low energy on the Pt(100) surface by molecular dynamics simulation. The interaction potential obtained by the embedded atom method (EAM) was used in the simulation. The incident energy changes from 0.1eV to 200eV, and the target temperature ranges from 100 to 500 K. The target scales are 6×6×4 and 8×8×4 fcc cells for lower and higher incident energies, respectively. The adatom, sputtering, vacancy and backscattering yields are calculated. It was found that there is a sputtering threshold for the incident energy. When the incident energy is higher than the sputtering threshold, the sputtering yield increases with the increase of incident energy, and the sputtering shows a symmetrical pattern. We found that the adatom and vacancy yields increase as the incident energy increases. The vacancy yields are much higher than those obtained by Monte Carlo simulation. The dependence of the adatom and sputtering yields on the incident energy and the relative atomistic mechanisms are discussed.     

采用壳层效应屏蔽长度Monte Carlo方法计算溅射产额

使用ACAT模拟程序计算了不同离子碰撞在单原子材料上的溅射产额.采用山村等人提出的考虑壳层效应的理论屏蔽长度,原子间作用势用Moliére势.并将计算结果与实验数据和山村等的经验公式进行了比较.     

FeCl+轰击Ag靶的溅射产额非线性增强效应

报道了用FeCl⁺、⁵⁶Fe⁺和³⁵Cl⁺轰击Ag靶的溅射原子角分布和产额测量结果.发现FeCl⁺轰击Ag的原子溅射产额与⁵⁶Fe⁺和³⁵Cl⁺轰击的溅射产额之和相比有大的增强.这种溅射产额增强现象可以用热峰蒸发(thermal spike-evaporation)加上表面拓扑效应(surface topography effect)的理论模型进行解释.     

Sputtering studies with the Monte Carlo Program TRIM.SP

The Monte Carlo Program TRIM.SP (sputtering version of TRIM) was used to determine sputtering yields and energy and angular distributions of sputtered particles in physical (collisional) sputtering processes. The output is set up to distinguish between the contributions of primary and secondary knock-on atoms as caused by in- and outgoing incident ions, in order to get a better understanding of the sputtering mechanisms and to check on previous theoretical models. The influence of the interatomic potential and the inelastic energy loss model as well as the surface binding energy on the sputtering yield is investigated. Further results are sputtering yields versus incident energy and angle as well as total angular distributions of sputtered particles and energy distributions in specific solid angles for non-normal incidence. The calculated data are compared with experimental results as far as possible. From this comparison it turns out that the TRIM.SP is able to reproduce experimental results even in very special details of angular and energy distributions.     

Surface topography effect on sputtering angular distributions from a Fe–W alloy

Abstract

An observation of the surface structures of Fe-W alloy target irradiated by 27 keV Ar⁺ ions with a fluence of 1 × 10¹⁷/cm² is carried out to investigate the surface topography effect on the sputtering angular distributions of individual elements. The angular distribution of sputtered Fe atoms is more outward-peaked than the cosine distribution. The found pit structures with an enriched Fe concentration may be one of the major causes of the deviation of the angular distribution of sputtered Fe atoms from Sigmund's theory.     

Ni原子倾斜轰击Pt(111)表面低能溅射现象的分子动力学模拟

采用嵌入原子方法的原子间相互作用势,通过分子动力学模拟详细研究了以不同角度入射的低能Ni原子与Pt (111)基体表面相互作用过程中的低能溅射行为.结果表明:随着入射角度从0°增加到80°,溅射产额Y_s和入射原子钉扎系数S的变化均可以根据入射角θ近似地分为以下三个区域:当θ ≤ 20°时,Y_s和S几乎保持不变,其值与垂直入射时接近,溅射原子的发射角分布和能量分布也与垂直入射时的情 关键词： 分子动力学模拟 入射角 低能溅射     

Molecular dynamics study of sputtering of Cu (111) under Ar ion bombardment

Abstract

We have used the molecular dynamics (MD) technique using many-body interaction potentials to analyse in detail the processes leading to sputter emission, in order to gain a microscopic understanding of low energy bombardment phenomena. Calculations were performed for a Cu (111) single crystal surface bombarded with Ar atoms in the energy range from 10–1000 eV. The results presented for low bombarding energies are mainly concerned with the near sputtering threshold behaviour, yields and depth of origin of sputtered atoms. Furthermore, it is found, that in addition to sputtered atoms, a large number of ad-atoms at the surface are generated during the evolution of the collision cascade. At higher energies the question of cluster emission and especially their energy distribution and angular distribution are addressed. It was found that the energy distributions for the dimers and monomer atoms exhibit a similar dependence on emission energy as has been observed recently also experimentally. For atoms good agreement with the theoretical Sigmund-Thompson energy distribution was observed. However, for dimers we found that the energy distributions exhibit an asymptotic behaviour at high energies with E^?3 rather than with E^?5, as predicted in previous modelling of cluster emission. Concerning the angular distributions six emission spots, three strong ones in the <110> and three weak ones in the <100> direction were found for atoms, but for dimers only emission spots in the <110> direction were observed, in agreement with experimental results.     

离子轰击引起的表面形貌对Ag的溅射产额的影响

用捕获膜技术和卢瑟福背散射(RBS)谱仪测定Ag靶在27keV Ar⁺离子轰击下的溅射原子角分布,从而确定不同剂量下Ag的溅射产额,并对其靶点表面形貌进行扫描电子显微镜(SEM)观察。结果发现,所有的角分布都呈over-cosine形状,但其溅射产额却随着表面形貌不同而不同。根据溅射产额Y与轰击离子入射角φ变化关系,讨论不同轰击剂量下溅射产额的差别,肯定了表面形貌是影响溅射产额的一个重要因素,并由此提出“表观产额”的新概念。 关键词：     

Al-50wt% Sn合金的离子溅射研究

用捕获膜技术和卢瑟福背散射(RBS)分析,测定Al-Sn多相合金在30keV Ar⁺离子轰击时Al和Sn的溅射原子角分布。溅射后的样品用扫描电子显微镜(SEM)进行观察,并用电子微探针分析仪(EPMA)对轰击样品(靶点)和未轰击样品作成分分析。结果表明,Al的溅射原子角分布近于cosine形状,而Sn却是over-cosine型角分布。本文给出一个按不同表面形貌特征划分的各元素富集区i进行叠加的产额表达式,Y(θ)=∑Y_i(θ),解释了实验结果。 关键词：     

高电荷态离子与Si(110)晶面碰撞的沟道效应研究

不同电荷态低速离子(Ar^q+,Pb^q+)轰击Si(110)晶面,测量不同入射角情况下的次级粒子的产额. 通过比较溅射产额与入射角的关系,证实沟道效应的存在. 高电荷态离子与Si相互作用产生的沟道效应说明溅射产额主要是由动能碰撞引起的. 在小角入射条件下,高电荷态离子能够增大溅射产额. 当高电荷态离子以40°—50°入射时,存在势能越高溅射产额越大的势能效应. 关键词： 高电荷态离子 溅射 沟道效应     

Secondary ion emission. Part II: Testing of the thermodynamic non-equilibrium model of surface ionization

Abstract

Using experimental values of the relative yields of positive and negative secondary ions for 31 pure elements and 9 compounds bombarded with 13.5 keV Cs⁺ ions temperatures of sputtering centers, T _sc , have been determined. Similarly, the degrees of ionization of sputtered atoms, α₊ and α_?, have been determined from M ₊ and M _? yields and as assumed secondary ion transmission efficiency of 1%. Two non-equilibrium equations of surface ionization (NESI) were used to determine T _sc . The calculated temperatures, as well as the degrees of ionization, have periodic dependence on the atomic number of the target, Z ₂. Most of the calculated temperatures are lower than the boiling temperatures, T _b , of bombarded targets and for refractory elements T _sc values are even lower than the melting temperatures, T _m . However, T _sc for most of the amphoteric and non-metallic elements are higher than T _b but lower than their critical temperatures, T _c .     

BaF2晶体的取向和入射束的剂量对溅射的影响

２７ｋｅＶ Ａｒ^＋离子束沿法向分别入射在ＢａＦ₂单晶（１１１），（１００）和（１１０）的晶面上，用捕获器方法和Ｒｕｔｈｅｒｆｏｒｄ背散射分析法测定了Ｂａ原子的溅射角分布和溅射产额。结果发现不同取向的晶体表面，它们的溅射产额有明显差异。当用剂量为５×１０¹⁷ｉｏｎ／ｃｍ²的Ａｒ^＋离子分别轰击这三种晶面时，其溅射产额的顺序Ｙ_１００＞ｙ_１１１＞ｙ_１１０．对已被上述剂量辐照过的晶面再作相同剂量轰击时，测得的溅射产额明显增大。这些结果被认为是由于在离子辐照过程中表面晶格受损逐步增大所致。 关键词：     

Temperature dependence of angular characteristics of boron nitride sputtering

The angular dependence of the sputtering yield and the spatial distribution of particles ejecting from a boron nitride polycrystal with a wurtzite structure in the temperature range from 0 to 2800°C under bombardment with 300 eV xenon ions are calculated by the molecular dynamics method. A reduction of steepness of the curves of angular dependence of boron nitride sputtering with increasing temperature is revealed. Features of the obtained distributions are analyzed on the basis of mechanisms of interaction of slow heavy ions with surface target atoms.     

聚变α粒子对第一壁辐照损伤的蒙特-卡罗研究(Ⅱ)——溅射

本文应用蒙特-卡罗方法研究聚变α粒子对不锈钢第一壁的溅射损伤。首先,计算单种元素Fe,Cr,Ni的溅射产额随入射能量的变化,并与实验结果比较,以确定计算中所用到的一些重要参数,如原子位移能等。在此基础上计算聚变α粒子对不锈钢(Fe_0.73Cr_0.18Ni_0.09)的部分(和总)溅射产额,溅射粒子的能谱、角分布和源深度分布,以及上述各量与α粒子入射角的关系。结果表明,在考虑入射α粒子随能量及入射角的分布后,其平均总溅射产额为0.375。由于1     

Determination of the negative ion yield of copper sputtered by cesium ions

Abstract

This paper describes the determination of secondary ion yields for negative ions obtained by bombardment of copper by cesium ions. Stable and reproducible surface conditions are reached by high rate sodium deposition simultaneously with sputtering. An optimum thickness of sodium corresponding to about one monolayer is found. Total negative ion yields K ^? _Σ are measured by a double modulation technique. Individual negative ion yields K ^? _i are then found by mass spectrometrically determining the various negative ion intensities, the sum of which relates linearly to K ^? _Σ. This method is based on the assumption of an equal angular and energy distribution of all sputtered negative ions. Data are given for K^? _Σ and K ^? _Cu and K^? _O. The dependence of K ^? _i on primary ion energy (500 to 2500 eV) is similar to ordinary sputtering which points to the same basic mechanism in both cases.     

Angular distributions of sputtered atoms for low-energy nitrogen irradiation of silicon

We studied the angular distributions of silicon and nitrogen atoms emitted from a Si target subjected to reactive sputtering by N ₂ ⁺ ions at primary energies of 0.5 and 2keV. The composition of the deposited material does not depend strongly on the substrate position. From a comparison with nonreactive sputtering, we show that the observed shift of the Si angular distribution is mainly due to the contribution of collision events occurring in the first monolayer. Contrary to the case of noble gas ions, the sharpness of the Si distribution depends on the N ₂ ⁺ energy. The behavior of the differential sputtering yield of silicon indicates that this effect is likely to be due to a loss of recoil atoms out of the preferential direction. A possible explanation of the observed phenomena consists in assuming an anisotropic emission of Si _x N _y radicals. This hypothesis is very attractive as it could satisfactorily explain the similarity we observed between the angular distributions of silicon and nitrogen.     

Pt(111)表面低能溅射现象的分子动力学模拟

利用嵌入原子方法的原子间相互作用势，通过分子动力学模拟，详细研究了贵金属原子在Pt (111)表面的低能溅射现象.模拟结果显示：对于垂直入射情况，入射原子的质量对Pt (11 1)表面的溅射阈值影响不大.当入射原子的能量小于溅射阈值时，入射原子基本以沉积为主 ；当入射原子的能量大于溅射阈值时，溅射产额随入射原子能量的增加而线性增大；当入射 原子能量达到200 eV时，各种入射原子的溅射产额都达到或接近1，此时入射原子主要起溅 射作用.溅射原子发射的角分布概率和溅射花样与高能溅射相类似.研究表明：与基于二体碰 撞近似的线性级联溅射理论不同，当入射原子能量大于溅射阈值时，低能入射原子的溅射产 额正比于入射原子的约化能量和入射原子与基体原子的质量比.通过对低能入射原子的钉扎 能力分析，提出了支配低能溅射的入射原子反射物理机理. 关键词： 分子动力学模拟、低能溅射     

低能Pt原子与Pt(111)表面相互作用的分子动力学模拟

利用分子动力学模拟方法详细研究了低能Pt原子与Pt(111)表面的相互作用所导致的表面吸附原子、溅射原子、表面空位的产生及分布规律,给出了表面吸附原子产额、溅射原子产额和表面空位产额随入射Pt原子能量的变化关系.模拟结果显示:溅射产额、表面吸附原子产额和表面空位产额随入射原子的能量的增加而增加,溅射原子、表面吸附原子的分布花样呈3度旋转对称性质;当入射粒子能量高于溅射阈值时,表面吸附原子主要是基体最表面原子的贡献,入射粒子直接成为表面吸附原子的概率很小.其主要原因是:当入射粒子能量高于溅射能量阈值时,入射 关键词： 分子动力学 低能粒子 表面原子产额 空位缺陷 溅射