Defect modes tuning of one-dimensional photonic crystals with lithium niobate and silver material defect

In this paper, a novel PCs defect mode is designed by inserting a Ag/LiNbO₃/Ag sandwich structure into periodically stacked TiO₂/MgF₂ dielectric superlattice. The band gap calculation is conducted using transfer matrix method. An emergence of defect mode around 525 nm is demonstrated. By applying an external voltage on this defect mode, remarkable wavelength tuning can be achieved. At normal incidence, a tuning bandwidth up to 70 nm is obtained by moderate change of external voltage from −250 to 250 V. This feature can be employed to fabricate practical tunable filters in visible region.     

Numerical simulation of nonlinear properties of fullerene-containing one-dimensional photonic crystal

A model of interaction between a one-dimensional photonic crystal (PC) containing a defect (nonlinear optical layer of C₆₀ fullerene) and radiation with a wavelength ??₀= 1064 nm under steady-state conditions has been considered. This structure is a Fabry-Perot microcavity: a fullerene layer (with a thickness multiple of ??₀/2) is placed between the interference mirrors formed by alternating layers ??₀/4 thick. The PC under consideration (1) has a narrow transmission band in the vicinity of ??₀ against the background of a relatively wide 100%-reflection band (photonic band gap) in the linear mode and (2) provides multiple amplification of the radiation intensity in the intermediate layer with respect to the external radiation intensity. Since C₆₀ fullerene exhibits a significant optical Kerr nonlinearity, the optical thickness of the intermediate layer under irradiation deviates from the value multiple of ??₀/2; as a result, 100% transmission for ??₀ changes to almost 100% reflection at a certain radiation intensity. Thus, this structure behaves as a peculiar optical limiter.     

Theoretical investigation of the reflectivity of fullerene-(C60, C70)/AlN multilayers in UV region

Theoretical calculations via a transfer matrix method (TMM) were performed to investigate the possibility of fullerene/AlN multilayer films acting as one-dimensional (1D) photonic band gap (PBG) crystals. The response within and out of the periodic plane of (C₆₀, C₇₀)/AlN multilayers was studied. (C₆₀, C₇₀)/AlN multilayer films presented incomplete PBG behavior in UV region. C₆₀/AlN multilayers with two pairs of 49 nm-C₆₀ and 21 nm-AlN layers exhibited a high reflectivity of 90.4% at a wavelength of about 200 nm. As a consequence, this photonic crystal may be important for achieving materials with an incomplete band gap in the UV region.     

The rapid preparation of large-scale CdS opal photonic crystals and study of the optical properties

Monodispersed silica microspheres of 270 nm are synthesized by a colloidal solution method. Larger scale perfect three-dimensional photonic crystals (PCs) are rapidly prepared using the evaporation of acetone to self-assemble the microspheres on quartz substrates by vertical deposition methods. We find that the pseudo-photonic band gap (PBG) of the PC structure changes with increasing annealing temperature; it drastically shifts from 450 nm for as-grown crystals to 409 nm for annealing at 800 °C. CdS photonic crystals are formed by infiltrating CdS nanocrystals of 6 nm into the SiO₂ PC structure. The transmission and spontaneous emission characteristics of CdS PCs have been investigated. The clear dip in the spontaneous emission spectrum relates to the photonic band gap of CdS PCs, indicating that the spontaneous emission is inhibited in the region of the PBG. The emission band of CdS PCs becomes narrower and sharper than that of CdS nanocrystals; this demonstrates that the emission band and intensity of the luminescent devices will be tuned by controlling the position of the PBG. PACS 42.70.Qs; 42.25.Bs; 78.20.-e; 78.55.Et     

The modulation on the optical responses of one-dimensional photonic crystals based on the ordered porous TiO2 films

The optical responses of the 1D porous TiO₂/SiO₂ complete and defect PCs formed with the ordered porous TiO₂ film prepared by using the spin coating and annealing techniques have been systematically studied with FDTD simulation technique. The whole photonic band gap can be easily linearly modulated by the structure parameters, such as thickness, porosity, the filled materials, and so on. The defect layer thickness and porosity only modulate the defect state, and have little effects on the whole PBG. It is more important that the 1D porous TiO₂/SiO₂ complete and defect PCs have no omnidirectional photonic band gap and defect state.     

On ultra-thin oxide/Si and very-thin oxide/Si structures prepared by wet chemical process

The properties of ultra-thin oxide/Si and very-thin oxide/Si structures prepared by wet chemical oxidation in nitric acid aqueous solutions (NAOS) and passivated in HCN aqueous solutions were investigated by electrical, optical and structural methods. n- and p-doped (1 0 0) crystalline Si substrates were used. There were identified more types of interface defect states in dependence on both post-oxidation treatment and passivation procedure. On samples prepared on n-type Si, continuous spectrum of defect states of 0.05-0.2 eV range and discrete defect traps, ∼E_CB − 0.26 eV and ∼E_CB − 0.39 eV, were found. All mentioned defects are related with various types of Si dangling bonds and/or with SiO_x precipitates. Post-metallization annealing of investigated MOS structures reduced the interface defect density and suppressed the leakage currents. It did not change spectral profile of interface defect states in the Si band gap. In addition, there are presented following two optical phenomena: relation between amplitude of photoluminescence signal of NAOS samples and parameters of chemical oxidation process and quantum confinement effect observed on samples containing Si grains of size less as ∼2 nm.     

Demonstration of temperature resilient properties of 2D silicon carbide photonic crystal structures and cavity modes

In this paper, photonic crystal (PhC) based on two dimensional (2D) square and hexagonal lattice periodic arrays of Silicon Carbide (SiC) rods in air structure have been investigated using plane wave expansion (PWE) method. The PhC designs have been optimized for telecommunication wavelength (λ = 1.55 μm) by varying the radius of the rods and lattice constant. The result obtained shows that a photonic band gap (PBG) exists for TE-mode propagation. First, the effect of temperature on the width of the photonic band gap in the 2D SiC PhC structure has been investigated and compared with Silicon (Si) PhC. Further, a cavity has been created in the proposed SiC PhC and carried out temperature resiliency study of the defect modes. The dispersion relation for the TE mode of a point defect A1 cavity for both SiC and Si PhC has been plotted. Quality factor (Q) for both these structures have been calculated using finite difference time domain (FDTD) method and found a maximum Q value of 224 for SiC and 213 for Si PhC cavity structures. These analyses are important for fabricating novel PhC cavity designs that may find application in temperature resilient devices.     

Influence of Si/SiO2 interface properties on electrical performance and breakdown characteristics of ultrathin stacked oxide/nitride dielectric films

In this work, the influence of Si/SiO₂ interface properties, interface nitridation and remote-plasma-assisted oxidation (RPAO) thickness (<1 nm), on electrical performance and TDDB characteristics of sub-2 nm stacked oxide/nitride gate dielectrics has been investigated using a constant voltage stress (CVS). It is demonstrated that interfacial plasma nitridation improves the breakdown and electrical characteristics. In the case of PMOSFETs stressed in accumulation, interface nitridation suppresses the hole traps at the Si/SiO₂ interface evidenced by less negative V_t shifts. Interface nitridation also retards hole tunneling between the gate and drain, resulting in reduced off-state drain leakage. In addition, the RPAO thickness of stacked gate dielectrics shows a profound effect in device performance and TDDB reliability. Also, it is demonstrated that TDDB characteristics are improved for both PMOS and NMOS devices with the 0.6 nm-RPAO layer using Weibull analysis. The maximum operating voltage is projected to be improved by 0.3 V difference for a 10-year lifetime. However, physical breakdown mechanism and effective defect radius during stress appear to be independent of RPAO thickness from the observation of the Weibull slopes. A correlation between trap generation and dielectric thickness changes based on the C-V distortion and oxide thinning model is presented to clarify the trapping behavior in the RPAO and bulk nitride layer during CVS stress.     

基于量子阱效应的光开关

把三块各带有一个缺陷的光子晶体结合起来，如果中央晶体的缺陷模处在两侧晶体的禁带中，缺陷模内的光波会受到两侧晶体的阻碍并被局域在中央晶体内，形成量子阱结构；若一侧晶体的缺陷模被移动到中央晶体缺陷模处，则只有一侧晶体阻碍在中央晶体缺陷模内传播的光波，量子阱效应完全消失，光的传输受到最大程度的阻碍.这种结构可同时具有窄带滤波器和光开关的功能，据此提出了一种高效的、灵敏的光开关的设计.采用传输矩阵法计算了一维光子晶体的透射谱和场分布.     

Optical and electrical properties of plasma-oxidation derived HfO2 gate dielectric films

High-k gate dielectric HfO₂ thin films have been deposited on Si(1 0 0) by using plasma oxidation of sputtered metallic Hf thin films. The optical and electrical properties in relation to postdeposition annealing temperatures are investigated by spectroscopic ellipsometry (SE) and capacitance-voltage (C-V) characteristics in detail. X-ray diffraction (XRD) measurement shows that the as-deposited HfO₂ films are basically amorphous. Based on a parameterized Tauc-Lorentz dispersion mode, excellent agreement has been found between the experimental and the simulated spectra, and the optical constants of the as-deposited and annealed films related to the annealing temperature are systematically extracted. Increases in the refractive index n and extinction coefficient k, with increasing annealing temperature are observed due to the formation of more closely packed thin films and the enhancement of scattering effect in the targeted HfO₂ film. Change of the complex dielectric function and reduction of optical band gap with an increase in annealing temperature are discussed. The extracted direct band gap related to the structure varies from 5.77, 5.65, and 5.56 eV for the as-deposited and annealed thin films at 700 and 800 °C, respectively. It has been found from the C-V measurement the decrease of accumulation capacitance values upon annealing, which can be contributed to the growth of the interfacial layer with lower dielectric constant upon postannealing. The flat-band voltage shifts negatively due to positive charge generated during postannealing.     

Fabrication of nanostructures by selective growth of C60 and Si on Si(1 1 1) substrate

Using two types of selective growth, selective C₆₀ growth and selective Si growth, on a common Si(1 1 1) substrate, an array of C₆₀ nanoribbons with controlled values of width and thickness is fabricated. On a surface that has Si(1 1 1)√3 × √3R30°-Ag (referred to as Si(1 1 1)√3-Ag hereafter) and bare Si(1 1 1) regions at the same time, the preferential growth of C₆₀ multilayered film is recognized on the Si(1 1 1)√3-Ag region. The growth of Si selectively occurs on a bare Si(1 1 1) region if the substrate surface has C₆₀-adsorbed and bare Si(1 1 1) regions at the same time. As a demonstration of the use of these selective growths, we fabricate an array of well-isolated C₆₀ nanoribbons, which show a well-ordered molecular arrangement and have sizes of about 40 nm in widths and 3-4 nm in thicknesses.     

Comparative study of optical parameters of fullerene C60 film at different temperatures

Fullerene C₆₀ thin films on glass substrate (around 2000 ? thickness) were prepared by thermal evaporation technique. The structural, surface morphology and optical properties of the films were studied. The optical properties of fullerene C₆₀ were investigated in the spectral range 200 nm to 900 nm using a UV-Vis spectrophotometer at room temperature as well as at liquid nitrogen temperature (77 K). The optical band gap at room temperature is found to be 2.30 eV, which gradually decreases with lowering the temperature and reaches to 2.27 at 77 K. The thickness and refractive index of fullerene C₆₀ film were calculated by ellipsometry. From the X-ray analysis, we have calculated the grain size, dislocation density, number of crystallite per unit area, and strain of the film at room temperature. The surface morphology of film was analyzed by scanning electron microscope (SEM). The present result show that the fullerene C₆₀ film becomes more conducting at low temperature.     

Laser synthesis of semiconductor nanostructures with narrow band gap

Semiconductor nanostructures with narrow band gap were synthesized by means of laser chemical vapor deposition (LCVD) of elements from iron carbonyl vapors [Fe(CO)₅] under the action of Ar⁺ laser radiation (λ_L = 488 nm) on the Si substrate surface. The temperature dependence of the specific conductivity of these nanostructures in the form of thin films demonstrated typical semiconductor tendency and gave the possibility to calculate the band gap for intrinsic conductivity (E_g) and the band gap assigned for impurities (E_i), which were depended upon film thickness and applied electrical field. Analysis of deposited films with scanning electron microscopy (SEM) and atomic force microscopy (AFM) demonstrated their cluster structure with average size not more than 100 nm. Semiconductor properties of deposited nanostructures were stipulated with iron oxides in different oxidized phases according to X-ray photoelectron spectroscopy (XPS) analysis.These deposited nanostructures were irradiated with Q-switched YAG laser (λ_L = 1064 nm) at power density about 6 × 10⁷ W/cm². This irradiation resulted in the crystallization process of deposited films on the Si substrate surface. The crystallization process resulted in the synthesis of iron carbide-silicide (FeSi_2−xC_x) layer with semiconductor properties too. The width of the band gap E_g of the synthesized layer of iron carbide-silicide was less than for deposited films based on iron oxides Fe₂O_3−x (0 ≤ x ≤ 1).     

Structural, electrical and piezoelectric properties of LiNbO3 thin films for surface acoustic wave resonators applications

In this work, 0.30 μm thick LiNbO₃ layers have been deposited by sputtering on nanocrystalline diamond/Si and platinised Si substrates. The films were then analyzed in terms of their structural and optical properties. Crystalline orientations along the (0 1 2), (1 0 4) and (1 1 0) axes have been detected after thermal treatment at 500 °C in air. The films were near-stoichiometric and did not reveal strong losses or diffusion in lithium during deposition or after thermal annealing. Pronounced decrease of the roughness on top of the LiNbO₃ layer and at the interface between LiNbO₃ and diamond was also observed after annealing, compared to the bare nanocrystalline diamond on Si substrate. Furthermore, ellipsometry analysis showed a better density and a reduced thickness of the surface layer after post-deposition annealing. The dielectric constant and losses have been measured to 50 and less than 3.5%, respectively, for metal/insulator/metal structures with 0.30 μm thick LiNbO₃ layer. The piezoelectric coefficient d₃₃ was found to be 7.1 pm/V. Finally, we succeeded in switching local domain under various positive and negative voltages.     

一维缺陷光子晶体温度的测量

采用Si和SiO₂两种介质材料构造一维缺陷光子晶体,缺陷层介质为Si,利用传输矩阵法对带有缺陷的一维光子晶体的传光特性进行了理论分析,并得到其带隙特性.由于缺陷的存在,使得光子晶体的透射谱中产生缺陷峰.当被测温度变化时,根据两种介质的热光效应和热膨胀效应,光子晶体介质和缺陷层的光学厚度和折射率发生变化,透射谱缺陷峰产生漂移,由缺陷峰的中心波长漂移量得到被测温度的大小.构建了一维缺陷光子晶体测量温度的实验系统,实验结果表明缺陷峰中心波长与光子晶体所受的温度呈线性关系,测量灵敏度为0—2 关键词： 温度测量 一维光子晶体 传输矩阵法 缺陷峰     

A novel design of a photonic crystal sensor with improved sensitivity

Biosensors, based on photonic crystal (PC), are emergent subject. The use of PCs in this area brought solutions to both miniaturization and integration challenges that have been facing research groups for long time. We are only recently, by engineering such defects, able to propagate light in complex structures containing molecules of different sizes and shapes. We propose a novel structure containing defects with various sizes. The PC is formed by a dielectric cylinders with permittivity 8.9 (alumina Al₂O₃) and a radius r = 0.2a (a is the square lattice constant), arranged in a square lattice. We use the finite difference time domain to investigate the sensitivity of the proposed sensor to water. The defect based sensing element is introduced in two directions 〈0 1〉 and 〈1 0〉. These simulations show a better sensitivity to water than other analytes. It appears in the transmission curves where the peak shifts to high frequency when the refractive index is changed.     

Tunable light emission and decaying process of photoluminescence from a nanostructured Si-in-SiNx film

Strong photoluminescence (PL) covering the green-violet band was measured at room temperature in an as-deposited amorphous Si-in-SiN_x film, which was prepared by plasma-enhanced chemical vapor deposition on cold (below 60 °C) Si(1 0 0) wafer. With an increase in photon energy of excitation, the PL shifts its peak position from 510 to 416 nm at yet-comparable intensities, thus allowing an energy-selected excitation in practical application. Also, a time-resolved analysis was performed for the emissions at various wavelengths, which showed a decay time shorter than 1.0 ns. These results indicate that the nanostructured Si-in-SiN_x can be a promising candidate material for the fabrication of silicon-based optical interconnections and switches.     

Fabrication and annealing analysis of three-dimensional photonic crystals

Three-dimensional face-centered-cubic (fcc) photonic crystals (PhCs) are fabricated on quartz substrate using vertical deposition technique, and followed by annealing in a temperature range of 200-700 °C. The monodispersed SiO₂ microspheres with a diameter of 220 nm in colloidal solution are synthesized using tetraethylorthosilicate as a precursor material. The as grown opal structure exhibits a strong photonic band gap (PBG) around 450 nm in the transmission spectrum. We find that the position of PBG peak in the spectrum is relevant to incident angle of light. Moreover, it is very sensitive to annealing temperature. It quickly shifts to short wavelength direction with annealing temperature increasing. The effect results from the decrease in refraction index due to the moisture evaporation in silica microspheres.     

Light confinement in 3D silicon doped with germanium (n-SixGe1−x) and silicon-on-insulator (SOI) photonic crystal structures

The numerical investigation of photonic band gaps (PBGs) for three-dimensional (3D) photonic crystals (PCs) of silicon doped with germanium (n-Si_xGe_1−x) and silicon-on-insulator (SOI) structures has been illustrated. The effect of germanium-doping (Ge-doping) concentration on the vertical confinement of the light and the band gap size has been presented. A 3D full vectorial plane wave was developed and employed to investigate design parameters of the 3D PC structure and to calculate dispersion relation for guided modes. Calculations of band structures for the triangular lattices of dielectric cylinders in air for quasi-3D PC structures have been performed.     

A first-principles calculation on the electronic properties of Si/N-codoped TiO2

To deeply understand the effects of Si/N-codoping on the electronic structures of TiO₂ and confirm their photocatalytic performance, a comparison theoretical study of their energetic and electronic properties was carried out involving single N-doping, single Si-doping and three models of Si/N-codoping based on first-principles. As for N-doped TiO₂, an isolated N 2p state locates above the top of valence band and mixes with O 2p states, resulting in band gap narrowing. However, the unoccupied N 2p state acts as electrons traps to promote the electron-hole recombination. Using Si-doping, the band gap has a decrease of 0.24 eV and the valence band broadens about 0.30 eV. These two factors cause a better performance of photocatalyst. The special Si/N-codoped TiO₂ model with one O atom replaced by a N atom and its adjacent Ti atom replaced by a Si atom, has the smallest defect formation energy in three codoping models, suggesting the model is the most energetic favorable. The calculated energy results also indicate that the Si incorporation increases the N concentration in Si/N-codoped TiO₂. This model obtains the most narrowed band gap of 1.63 eV in comparison with the other two models. The dopant states hybridize with O 2p states, leading to the valence band broadening and then improving the mobility of photo-generated hole; the N 2p states are occupied simultaneously. The significantly narrowed band gap and the absence of recombination center can give a reasonable explanation for the high photocatalytic activity under visible light.