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Theoretical investigation of the reflectivity of fullerene-(C60, C70)/AlN multilayers in UV region |
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| Authors: | Xu Bingshe Han Peide Liu Xuguang Li Tianbao Hideki Ichinose |
| Institution: | a College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, People's Republic of China b Institute for Materials Research, Tohoku University, Aoba-ku 9808577, Japan c Center for Advanced Research of Energy Conversion Materials, Hokkaido University, Kita-ku 0608628, Japan |
| Abstract: | Theoretical calculations via a transfer matrix method (TMM) were performed to investigate the possibility of fullerene/AlN multilayer films acting as one-dimensional (1D) photonic band gap (PBG) crystals. The response within and out of the periodic plane of (C60, C70)/AlN multilayers was studied. (C60, C70)/AlN multilayer films presented incomplete PBG behavior in UV region. C60/AlN multilayers with two pairs of 49 nm-C60 and 21 nm-AlN layers exhibited a high reflectivity of 90.4% at a wavelength of about 200 nm. As a consequence, this photonic crystal may be important for achieving materials with an incomplete band gap in the UV region. |
| Keywords: | 6148 4270Q 7865P 7865V |
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