Intramolecular structures of C60 and C84 molecules on Si(1 1 1)-7 × 7 surfaces by scanning tunneling microscopy

The intramolecular features of carbon 60 and carbon 84 molecules on Si(1 1 1)-7 × 7 surfaces were studied under a UHV-scanning tunneling microscope. Carbon molecules preferentially appear in faulted halves, rather than in unfaulted halves and corner holes; they are embedded in silicon substrates. The orientation and details of the structure of carbon molecules are determined by applying various sample biases to the silicon substrate. As compared with other fullerenes, a bright pentagonal ring with nebulous clusters which represents the cage structure is clearly observed on top of carbon 60 molecules. The bright stripes associated with partitioned curves which depict eight features of asymmetrical C₈₄ molecules are also investigated on Si(1 1 1)-7 × 7 surfaces. The orientations and possible configurations of C₆₀ and C₈₄ are considered in this work. The energy differences for various features of C₆₀ and C₈₄ molecules are estimated and discussed. The corresponding models with respect to each intramolecular feature are proposed and compared with recent theoretical calculation.     

Structural study of Si(1 1 1)-6 × 1-Ag surface using surface X-ray diffraction

The surface structure of Si(1 1 1)-6 × 1-Ag was investigated using surface X-ray diffraction techniques. By analyzing the CTR scattering intensities along 00 rod, the positions of the Ag and reconstructed Si atoms perpendicular to the surface were determined. The results agreed well with the HCC model proposed for a 3 × 1 structure induced by alkali-metals on a Si(1 1 1) substrate. The heights of the surface Ag and Si atoms did not move when the surface structure changed from Si(1 1 1)-√3 × √3-Ag to Si(1 1 1)-6 × 1-Ag by the desorption of the Ag atoms. From the GIXD measurement, the in-plane arrangement of the surface Ag atoms was determined. The results indicate that the Ag atoms move large distances at the phase transition between the 6 × 1 and 3 × 1 structures.     

Growth of nano-crystalline metal dots on the Si(1 1 1)-7 × 7 surface saturated with C2H5OH

Metal atom on the Si(1 1 1)-7 × 7 surface undergoes migration by hopping among Si-adatom and Si-rest atom. If the hopping migration is prohibited, how change the deposited metals? In this paper, we studied the deposition of metals on the Si(1 1 1)-7 × 7 surface saturated with C₂H₅OH, on which the whole Si-rest atoms are changed to Si-H so that the hoping migration of metals will be prohibited. We found the growth of ca. 5 nm of crystalline dots by the deposition of Sn, Zn and Ag. Interestingly, Ag dots undergo layer-by-layer growth so that the surface is covered with 5 nm size dots with uniform height. When the hopping migration is prohibited, growth of dots is controlled by the kinetics of precursor state atoms instead of the lattice energy relating to lattice matching or strain.     

DFT study of NH3 dissociation on Si(1 1 1)-7 × 7. The role of intermolecular interactions

The adsorption of NH₃ molecule on the Si(1 1 1)-7 × 7 surface modelled with a cluster has been studied using density functional theory (DFT). The results indicate the existence of a precursor state for the non-dissociative chemisorption. The active site for the molecular chemisorption is the adatom; while the NH₃ molecule adsorbs on the Si restatom via this preadsorbed state, the adsorption on the Si adatom is produced practically without an energy barrier. The ammonia adsorption on the adatom induces an electron transfer from the dangling bond of this atom to the dangling bond of the adjacent Si restatom, hindering this site for the adsorption of a second NH₃ incoming molecule. However, this second molecule links strongly by means of two H-bonds. The dissociative chemisorption process was studied considering one and two ammonia molecules. For the dissociation of a lonely NH₃ molecule an energy barrier of ∼0.3 eV was calculated, yielding NH₂ on the adatom and H on the restatom. When two molecules are adsorbed, the NH₃-NH₃ interaction yields the weakening of a N-H bond of the ammonia molecule adsorbed closer the Si surface. As a consequence, the dissociation barrier practically disappears. Thus, the presence of a second NH₃ molecule at the adatom-restatom pair of the Si(1 1 1)-7 × 7 surface makes the dissociative reaction self-assisted, the total adsorption process elapsing with a negligible activation barrier (less than 0.01 eV).     

Growth of (√3 × √3)-Ag and (1 1 1) oriented Ag islands on Ge/Si(1 1 1) surfaces

We have studied the growth of Ag on Ge/Si(1 1 1) substrates. The Ge/Si(1 1 1) substrates were prepared by depositing one monolayer (ML) of Ge on Si(1 1 1)-(7 × 7) surfaces. Following Ge deposition the reflection high energy electron diffraction (RHEED) pattern changed to a (1 × 1) pattern. Ge as well as Ag deposition was carried out at 550 °C. Ag deposition on Ge/Si(1 1 1) substrates up to 10 ML has shown a prominent (√3 × √3)-R30° RHEED pattern along with a streak structure from Ag(1 1 1) surface. Scanning electron microscopy (SEM) shows the formation of Ag islands along with a large fraction of open area, which presumably has the Ag-induced (√3 × √3)-R30° structure on the Ge/Si(1 1 1) surface. X-ray diffraction (XRD) experiments show the presence of only (1 1 1) peak of Ag indicating epitaxial growth of Ag on Ge/Si(1 1 1) surfaces. The possibility of growing a strain-tuned (tensile to compressive) Ag(1 1 1) layer on Ge/Si(1 1 1) substrates is discussed.     

Comparative investigation of the c(2 × 2)-Si/Cu(0 1 1) and (√3 × √3)R30°-Cu2Si/Cu(1 1 1) surface alloys using DFT

The electronic structure of the c(2 × 2)-Si/Cu(0 1 1) surface alloy has been investigated and compared to the structures seen in the three phases of the (√3 × √3)R30°Cu₂Si/Cu(1 1 1) system, using LCAO-DFT. The weighted surface energy increase between the alloyed Cu(0 1 1) and Cu(1 1 1) surfaces is 126.7 meV/Si atom. This increase in energy for the (0 1 1) system when compared to the (1 1 1) system is assigned to the transition from a hexagonal to a rectangular local bonding environment for the Si ion cores, with the hexagonal environment being energetically more favorable. The Si 3s state is shown to interact covalently with the Cu 4s and 4p states whereas the Si 3p state, and to a lesser extent the Si 3d state, forms a mixture of covalent and metallic bonds with the Cu states. The Cu 4s and 4p states are shown to be altered by approximately the same amount by both the removal of Cu ion cores and the inclusion of Si ion cores during the alloying of the Cu(0 1 1) surface. However, the Cu 3d states in the surface and second layers of the alloy are shown to be more significantly altered during the alloying process by the removal of Cu ion cores from the surface layer rather than by the addition of Si ion cores. This is compared to the behavior of the Cu 3d states in the surface and second layers of the each phase of the (√3 × √3)R30°-Cu₂Si/Cu(1 1 1) alloy and consequently the loss of Cu-Cu periodicity during alloying of the Cu(0 1 1) surface is conjectured as the driving force for changes to the Cu 3d states. The accompanying changes to the Cu 4s and 4p states in both the c(2 × 2)-Si/Cu(0 1 1) and (√3 × √3)R30°-Cu₂Si/Cu(1 1 1) alloys are quantified and compared. The study concludes with a brief quantitative study of changes in the bond order of the Cu-Cu bonds during alloying of both Cu(0 1 1) and Cu(1 1 1) surfaces.     

Study on topographic images of Sn/Si(1 1 1)-(√3 × √3)R30° surface by non-contact AFM

Various contrast of topographic images depending on a state of a tip apex on Sn/Si(1 1 1)-(√3 × √3)R30° surface was investigated using a low temperature non-contact AFM. With the type A tip, the image of the ring-type Sn, composed of six Sn atoms surrounding substitutional Si defect, was observed when the frequency shift (∣Δf∣) was small (the tip-sample distance, Z_tip-sample, was long), while the ring-type Sn was not observed and all the Sn atoms have the same contrast when ∣Δf∣ was large (Z_tip-sample was short). On the other hand, with the type B tip, modified from the type A tip by the tip-sample contact, the image of the ring-type Sn atoms was not observed regardless of variation of Δf. It is the first experimental result on the low temperature NC-AFM observation in the Sn/Si(1 1 1) system, which depends on short-range chemical bonding force or electrostatic force acting between the tip and the sample surface. In addition, the substitutional Si defects on the surface were seen as a dim spot or were not seen, also depending on the tip state.     

Growth of In nanocrystallite arrays on the Si(1 0 0)-c(4 × 12)-Al surface

Using scanning tunneling microscopy, growth of In nanoisland arrays on the Si(1 0 0)-c(4 × 12)-Al surface has been studied for In coverage up to 1.1 ML and substrate temperature from room temperature to 150 °C. In comparison to the case of In deposition onto the clean Si(1 0 0) surface or Si(1 0 0)4 × 3-In reconstruction, the In growth mode is changed by the c(4 × 12)-Al reconstruction from the 2D growth to 3D growth, thus displaying a vivid example of the Volmer-Weber growth mode. Possible crystal structure of the grown In nanoislands is discussed.     

Adsorption of organic molecules by photochemical reaction on Cl:Si(1 1 1) and H:Si(1 1 1) evaluated by HREELS

The covalent attachment of alkyl groups to silicon surfaces, via carbon-silicon bond formation, has been attempted using gas-surface reactions starting from Cl-terminated Si(1 1 1) or H:Si(1 1 1) under ultraviolet light irradiation. The formation of Cl-terminated Si(1 1 1) and its resulting stability were examined prior to deposition of organic molecules. High-resolution electron energy loss spectroscopy (HREELS) was utilized for detecting surface-bound adsorbates. The detection of photo-deposited organic species on Cl:Si(1 1 1) from gas-phase CH₄ or CH₂CH₂ was not significant. On H:Si(1 1 1), it was evident that after the photoreaction with gas-phase C₂H₅Cl, C₂H₅ groups were chemically bonded to the surface Si atoms through single covalent bonds. The C₂H₅ groups were thermally stable at temperatures below 600 K. Alkyl monolayers prepared on silicon surfaces by dry process will lead to a new prospective technology of nanoscale fabrication and biochemical applications.     

Molecular dynamics simulation of CH3 interaction with Si(1 0 0) surface

Molecular dynamics simulations of the CH₃ interaction with Si(1 0 0) were performed using the Tersoff-Brenner potential. The H/C ratio obtained from the simulations is in agreement with available experimental data. The results show that H atoms preferentially react with Si. SiH is the dominant form of SiH_x generated. The amount of hydrogen that reacts with silicon is essentially energy-independent. H atoms do not react with adsorbed carbon atoms. The presence of C-H bonds on the surface is due to molecular adsorption.     

Deduction of a three-phase model for the (√3 × √3)R30°-Cu2Si/Cu(1 1 1) surface alloy

The (√3 × √3)R30°-Cu₂Si/Cu(1 1 1) surface alloy that forms during high temperature dosing of silane (SiH₄) on Cu(1 1 1) has been investigated using LCAO-DFT. Simulated STM images have shown that experimental images may be interpreted as a mixed phase system consisting of Si ion cores bound in HCP, FCC and twofold bridge sites with a ratio of 25:25:50 rather than previously proposed models where the Si ion cores were bound in only FCC and HCP sites. The new model is shown to be consistent with previously published NIXSW studies.     

Effects of electronic confinement and substrate on the low-temperature growth of Pb islands on Si(1 0 0)-2 × 1 surfaces

The growth of Pb films on the Si(1 0 0)-2 × 1 surface has been investigated at low temperature using scanning tunneling microscopy. Although the orientation of the substrate is (1 0 0), flat-top Pb islands with (1 1 1) surface can be observed. The island thickness is confined within four to nine atomic layers at low coverage. Among these islands, those with a thickness of six layers are most abundant. Quantum-well states in Pb(1 1 1) islands of different thickness are acquired by scanning tunneling spectroscopy. They are found to be identical to those taken on the Pb(1 1 1) islands grown on the Si(1 1 1)7 × 7 surface. Besides Pb(1 1 1) islands, two additional types of Pb islands are formed: rectangular flat-top Pb(1 0 0) islands and rectangular three-dimensional (3D) Pb islands, and both their orientations rotate by 90° from a terrace to the adjacent one. This phenomenon implies that the structures of Pb(1 0 0) and 3D islands are influenced by the Si(1 0 0)-2 × 1 substrate.     

Investigation of the (√3 × √3)R30°-Cu2Si/Cu(1 1 1) surface alloy using DFT

The electronic structure of the FCC, HCP and 2-fold bridge phases of the (√3 × √3)R30°-Cu₂Si/Cu(1 1 1) surface alloy have been investigated using LCAO-DFT. Analysis of the total electron density, partial density-of-states (PDOS) and crystal orbital overlap population (COOP) curves for the system have shown a surprising similarity between the intra- and inter-layer Si-Cu bond for each phase. Low hybridization between the Si 3s and 3p orbitals results in a low directionality of the Si-Cu bond within each of phase. The Si 3s orbitals are shown to form covalent bonds with their surrounding Cu atoms whereas the Si 3p and 3d orbitals are shown to form combinations of covalent and metallic bonds. The Si-Cu interaction is shown clearly to extend to the second layer of the alloy in deference to previous studies of Si/Cu alloys.     

Chemisorption of 1,1-dichloroethene on the Si(1 1 1)-7 × 7 surface

Chemisorption of 1,1-dichloroethene (Cl₂CCH₂) to a Si(1 1 1)-7 × 7 surface was studied by means of X-ray photoelectron spectroscopy using synchrotron radiation, recording chlorine 2p and carbon 1s spectra. For carbon 1s, spectral assignment of the chemisorbed species is based on quantum chemical calculations of chemical shifts in model compounds.The results confirm the identity of covalently bonded 1-chlorovinyl (-CClCH₂) and vinylidene (CCH₂) adspecies. Upon chemisorption at room temperature it was found that about one-third of the molecules break one C-Cl bond while about two-thirds of the adsorbates break two C-Cl bonds. We do not, however, find evidence for isomerization of CCH₂ to di-bonded vinylene (-CHCH-).     

Perturbation of Ge(1 1 1) and Si(1 1 1)√3α-Sn surfaces by adsorption of dopants

We test the response of the √3 × √3α reconstructions formed by 1/3 monolayer of tin adatoms on silicon and germanium (1 1 1) surfaces upon doping with electrons or holes, using potassium or iodine as probes/perturbers of the initial electronic structures. From detailed synchrotron radiation photoelectron spectroscopy studies we show that doping with either electrons or holes plays a complimentary role on the Si and Ge surfaces and, especially, leads to complete conversion of the Sn 4d two-component spectra into single line shapes. We find that the low binding energy component of the Sn core level for both Si and Ge surfaces corresponds to Sn adatoms with higher electronic charge, than the Sn adatoms that contribute to the core level high binding energy signal. This could be analyzed as Sn adatoms with different valence state.     

Theoretical STM images of alkaline-earth metal adsorbed Si(1 1 1)3 × 2 surfaces

We have performed total-energy calculations to study theoretical scanning tunneling microscopy (STM) images of the Si(1 1 1)3 × 2 surfaces induced by the adsorption of alkaline-earth metals (AEMs). Previously, in a series of works on Ba/Si(1 1 1) system, we have found that the observed Si(1 1 1)3 × 1-Ba LEED phase indeed has a 3 × 2 periodicity with a Ba coverage of 1/6 ML and the HCC substrate structure. Based on results of the Ba case, we proposed that the HCC structure is also adopted for other AEM atoms, which was confirmed by our recent work. In this paper, we mainly report the STM simulations for different AEM systems to compare with existing experimental data. We discuss the difference in the detailed STM images for different AEM adsorbates. Especially, the difference in filled-state images between Mg and other AEM atoms is attributed to the strong Mg-Si interaction.     

Nanostructure formation aided by self-organised Bi nanolines on Si(0 0 1)

We provide a mini review of recent theoretical investigations of nanostructure formation aided by self-organised Bi nanolines on the Si(0 0 1) surface. It is suggested that hydrogen-passivated single-domain Si(0 0 1) produced by the formation of defect-free, hundreds of nm long, and 1.2-1.5 nm wide Bi nanolines provides an appealing template with preferential sites for adsorption of other elements. Based on ab initio pseudopotential calculations it is suggested that using the Bi nanoline template it should be possible to grow the following structures: mixed Ge-Si dimer structures on the Si(0 0 1) terrace between two neighbouring Bi nanolines; small In nanoclusters along the nanoline; and line and cluster structures of Fe atoms with novel electronic and magnetic properties.     

Isomeric effects on room-temperature chemisorption and thermal evolution of iso-, cis- and trans-dichloroethylene on Si(1 1 1)7 × 7

The room-temperature adsorption and thermal evolution of iso-, cis- and trans-dichloroethylene (DCE) on Si(1 1 1)7 × 7 have been studied by vibrational electron energy loss spectroscopy and thermal desorption spectrometry (TDS). The presence of the Si-Cl stretch at 510 cm⁻¹ suggests that, upon adsorption, all three isomers dissociate via C-Cl bond breakage on the 7 × 7 surface to form mono-σ bonded chlorovinyl , which could, in the case of iso-DCE, further dechlorinate to vinylidene (:CCH₂) upon insertion into the back-bond. The higher saturation exposure for the Si-Cl stretch at 510 cm⁻¹ observed for cis- and trans-DCE than iso-DCE suggests that Cl dissociation via the CHCl group in the cis and trans isomers is less readily than the CCl₂ group in iso-DCE. Our TDS data show remarkable similarities in both molecular desorption near 360 K and thermal evolution of the respective adstructures for all three isomers on Si(1 1 1)7 × 7. In particular, upon annealing to 450 K, the mono-σ bonded chlorovinyl adspecies is found to further dechlorinate to either vinylene di-σ bonded to the Si surface or acetylene to be released from the surface. Above 580 K, vinylene could also become gaseous acetylene or undergo H abstraction to produce hydrocarbon or SiC fragments. All three DCE isomers also exhibit TDS features attributable to an etching product SiCl₂ at 800-950 K and recombinative desorption products HCl at 700-900 K and H₂ at 650-820 K. The stronger Cl-derived TDS signals and Si-Cl stretch at 510 cm⁻¹ over 450-820 K for trans-DCE than those for cis-DCE indicate stronger dechlorination for trans-DCE than cis-DCE, which could be due to less steric hindrance resulting from the formation of the chlorovinyl adspecies for trans-DCE during the initial adsorption/dechlorination process. Finally, our density functional calculations qualitatively support the thermodynamic feasibility and relative stabilities of the proposed adstructures involving chlorovinyl, vinylidene, and vinylene adspecies.     

Ga-induced superstructures on the Si(1 1 1) 7 × 7 surface

Monolayer Ga adsorption on Si surfaces has been studied with the aim of forming p-delta doped nanostructures. Ga surface phases on Si can be nitrided by N₂⁺ ion bombardment to form GaN nanostructures with exotic electron confinement properties for novel optoelectronic devices. In this study, we report the adsorption of Ga in the submonolayer regime on 7 × 7 reconstructed Si(1 1 1) surface at room temperature, under controlled ultrahigh vacuum conditions. We use in-situ Auger electron spectroscopy, electron energy loss spectroscopy and low energy electron diffraction to monitor the growth and determine the properties. We observe that Ga grows in the Stranski-Krastanov growth mode, where islands begin to form on two flat monolayers. The variation in the dangling bond density is observed during the interface evolution by monitoring the Si (LVV) line shape. The Ga adsorbed system is subjected to thermal annealing and the residual thermal desorption studied. The difference in the adsorption kinetics and desorption dynamics on the surface morphology is explained in terms of strain relaxation routes and bonding configurations. Due to the presence of an energetic hierarchy of residence sites of adatoms, site we also plot a 2D phase diagram consisting of several surface phases. Our EELS results show that the electronic properties of the surface phases are unique to their respective structural arrangement.     

Structural phase transitions in Au thin films on Si (1 1 0): An in situ temperature dependent transmission electron microscopy study

We present a review on the formation of gold silicide nanostructures using in situ temperature dependent transmission electron microscopy (TEM) measurements. Thin Au films of two thicknesses (2.0 nm and 5.0 nm) were deposited on Si (1 1 0) substrate under ultra-high vacuum (UHV) conditions in a molecular beam epitaxy (MBE) system. Also a 2.0 nm thick Au film was deposited under high vacuum condition (with the native oxide at the interface of Au and Si) using thermal evaporation. In situ TEM measurements (for planar samples) were made at various temperatures (from room temperature, RT to 950 °C). We show that, in the presence of native oxide (UHV-MBE) at the interface, high aspect ratio (≈15.0) aligned gold silicide nanorods were observed. For the films that were grown with UHV conditions, a small aspect ratio (∼1.38) nanogold silicide was observed. For 5.0 nm thick gold thin film, thicker and lesser aspect ratio silicides were observed. Selected area diffraction pattern taken at RT after the sample for the case of 5.0 nm Au on Si (1 1 0)-MBE was annealed at 475 °C show the signature of gold silicide formation.