激光触发多级多通道开关研究

 研究了200kV激光触发多级多通道开关的运行机理，该开关在直流电压下以四倍频Nd:YAG激光器为触发源进行的实验结果表明：开关触发延迟时间及其抖动随开关电压、激光能量和充气压力上升呈指数下降趋势，对混合气体则随气体密度上升而上升。随透镜焦距的增大延迟时间及其抖动呈上升趋势。该开关实现了多通道放电。     

电爆炸丝1维磁流体模型数值模拟

 给出了电爆炸丝1维磁流体模型的具体描述和基本方程，并利用数值方法求解。通过对含电爆炸丝断路开关的电感储能脉冲功率电路模型的计算，给出了电爆炸丝电流、电压随时间的变化，以及电爆炸过程中丝的密度空间分布，膨胀半径随时间的变化，讨论了电爆炸丝长度和初始电压对电爆炸丝电流、电压的影响。     

非线性光导开关快速导通特性

非线性光导半导体开关的快速导通过程总是伴有电流丝的形成，基于电流丝表成的雪崩碰撞引起的粒子束放电机制的假定，考虑到载流子寿命，光吸收深度，碰撞电离系数以及初始载流子浓度等因素的影响，从理论上分子非线性光导开关雪崩导通的物理过程的导通特性，得到了一些与实验观测结果吻合得到很好结论，提出了一些有利于改善和控制非线性光导开关的工作特性的可行手段。     

等离子体源参数对长导通等离子体断路开关性能的影响

 研制了可工作在长导通时间（约1μs）的等离子体断路开关，实验研究了等离子体源参数，包括等离子体枪与主回路之间的触发延时、等离子体枪的工作电压以及等离子体枪的数目对开关性能的影响规律。研究结果表明，开关导通时间和开关电压随触发延时、枪工作电压和数目的增加而增加，但当开关导通时间接近主回路电流四分之一周期时，开关电压呈下降趋势。当Marx发生器工作电压为120kV且采用4个等离子体枪时，实验获得的最大电压倍增系数约为1.8。     

V掺杂6H-SiC光导开关制备与性能研究

采用V掺杂半绝缘6H-SiC单晶衬底材料制备了平面电极型大功率SiC光导开关,用强度为150μJ/mm2、波长为355nm的脉冲激光对开关进行触发,在1~14kV的外加电压范围内对光导开关的耐压特性、导通电阻等性能进行了研究。结果表明:随着开关外加电压的升高,开关的电流峰值呈现不断增大的趋势,当开关外加电压为14kV时,电流峰值达185A,对应的光导开关峰值功率为2.59MW,开关的导通电阻约为22Ω。     

影响碳化硅光导开关最小导通电阻的因素

采用2种电阻率的钒掺杂半绝缘6H-SiC晶体制作了横向结构的碳化硅光导开关,分别加载不同的偏压、并使用不同能量的激光触发开展光电导实验。对比实验结果表明:高暗态电阻率的碳化硅光导开关耐压特性远远优于低暗态电阻率的碳化硅光导开关,耐压从4 kV提高到了32 kV;但高暗态电阻率的开关导通电阻也较大,导通电阻为k量级,比低暗态电阻率的碳化硅光导开关的近百增加了1个量级。通过激光脉冲波形与光电流脉冲波形的比较,估算出2种光导开关的载流子寿命和载流子迁移率。将这2个参数与砷化镓光导开关进行比较,推导出低的载流子迁移率是碳化硅开关导通电阻较大的主要原因。在实验和分析的基础上改进设计,研制出了工作电压超过10 kV、工作电流超过90 A的碳化硅光导开关。     

激光二极管触发的光导开关-磁开关串联型组合开关北大核心CSCD

研究了一种新型的基于硅光导开关和磁开关串联的组合开关,相比于传统的磁开关,该开关能将数十μs的充电脉冲直接压缩到数十ns。比较了采用激光二极管触发时组合开关与单一硅光导开关的性能,结果表明,组合开关输出电流提高,前沿及脉宽均大幅减小,组合开关可以降低硅光导开关对触发光功率的需求,从而使得采用激光二极管实现硅光导开关触发成为可能。     

非线性光电导开关载流子碰撞电离分析

对非线性GaAs光电导开关在锁定期间的电流成丝现象、具有负微分迁移率的速场特性、深能级的陷阱效应、光子的再吸收等因素进行分析,建立了非线性光电导开关锁定期间的连续性方程和电中性方程.基于该方程组,用有限差分法计算了偏压为2 200 V的3.5 mm GaAs∶EL2非线性光电导开关的电流实验数据,得到电流丝内载流子瞬态特性为：载流子浓度约为1017 cm－3,EL2电子陷阱近似饱和;电子电流随锁定时间明显下降,空穴电流基本不变;单位寿命时间载流子雪崩倍增因子的均值约为1.2,其统计起伏随锁定时间增大.     

局部激光辐照下薄板结构的屈曲承载力分析北大核心CSCD

薄壁结构广泛应用于实际工程中,局部材料性能的变化、局部热应力等因素均影响结构的屈曲承载力。为考察局部升温对薄壁结构屈曲承载力的影响,通过激光辐照实现薄壁结构的局部快速升温。采用温度-位移耦合法进行非线性热屈曲分析,获得了激光功率密度、辐照光斑半径和薄板厚度对薄板热屈曲的影响;在此基础上采用弧长法分析轴向受压薄板结构在局部激光辐照下的整体屈曲承载力。数值结果表明:薄板结构的整体屈曲承载力随激光辐照时间的增加及辐照光斑半径的增大呈线性下降趋势,随薄板厚度的增加近似呈指数增大。     

不同形状的光斑触发砷化镓光导开关

为研究使用不同形状光斑触发光导开关对光电导特性的影响,研制了12 mm间隙的半绝缘砷化镓光导开关,在不同的偏置电压下,使用波长为1 064 nm的不同能量的激光触发光导开关并进行了光电导测试。使用了不同形状的光斑(包括面状、线状和点状光斑)触发光导开关并进行了光电导特性的比较,讨论了触发光参数对光导开关特性的影响。对处于开关电极间不同位置的线状光斑触发特性进行了比较,结果显示,本征光电导和非本征光电导情况下光斑位置对光电流的影响正好相反。     

用于MHZ重频光导开关触发的光纤分光系统设计

为了实现光导开关以MHz重复频率运行,设计了通过延迟产生MHz序列重复频率触发光的分光系统。分光系统由多根类蜂窝状排布的光纤组成并分为数组,各组光纤长度不同以产生时间序列。进行了光纤分光系统的理论计算,设计了分组程序,获得了各根光纤的输出端能量占比,实现了光纤输出端的分组设计优化。计算结果表明:当分光系统半径与激光器焦斑之比增大时,分光系统效率增高,达到一定数值后,分光系统效率趋于稳定;当激光器焦斑大小不变时,光纤层数增大,分光系统效率变小;当触发光脉冲数不变时,在一定范围内,光纤层数增大,输出端激光能量的最大相对误差变小。实验结果表明:四脉冲10 MHz分光系统实现了周期为100 ns的4个光脉冲输出,输出端能量最大相对误差6.80%,系统效率为38.07%。     

Persistent currents in three-dimensional shell-doped nanorings

The persistent current in three-dimensional (P× N²) nanorings as a function of the unit cell number (P), the channel number (M = N²), surface disorder (ξ ), and temperature (T) is theoretically investigated in terms of rotational symmetry. On the whole, the typical current increases linearly with \sqrt M but decreases exponentially with P, while wide fluctuations exist therein. In the presence of surface disorder, the persistent current decreases with ξ in the regime of weak disorder but increases in the regime of strong disorder. In addition, it is found that the persistent current in perfect rings decreases exponentially with temperature even at T < T^*     

Effect of different bending shapes on thermal properties of flexible light-emitting diode filament

Heat dissipation is an important part of light-emitting diode(LED) filament research and has aroused constant concern.In this paper, we studied the thermal performance of flexible LED filament by numerical simulation and through experiment.The heat dissipation characteristics of spring-like structure flexible LED filament were computed by finite volume method,and it was found that the chip junction temperature was closely related to the pitch and the bending radius. The effect of inclination angle of lighting LED filament was discussed because it is relevant to the spring-like structure flexible LED filament in geometry. The results demonstrated that the temperature of the filament increases as the inclination angle improves.     

Parametric resonance and cooling on an atom chip

This paper observes the parametric excitation on atom chip by measuring the trap loss when applying a parametric modulation. By modulating the current in chip wires, it modulates not only the trap frequency but also the trap position. It shows that the strongest resonance occurs when the modulation frequency equals to the trap frequency. The resonance amplitude increases exponentially with modulation depth. Because the Z-trap is an anharmonic trap, there exists energy selective excitation which would cause parametric cooling. We confirm this effect by observing the temperature of atom cloud dropping.     

Temperature dependence of the establishment time of the vacancy equilibrium in simple crystals

Establishment times of vacancy equilibrium t* in spherical samples of simple crystals of radius R due to thermal motion of atoms during the process maximally approached to the equilibrium upon lowering the temperature from the melting point to the current value T have been calculated. It has been found that (i) with a decrease in T, the equilibrium time t* exponentially increases, and (ii) with a decrease in the sample radius R, the time t* exponentially decreases. The general tendency toward increase in the time t* due to lowering the temperature overlaps the effect of decreasing sample size R; therefore, for any small samples, the temperature range T < T*, for which the diffusion process is almost frozen, always exists.     

Roles of voltage in semi-insulating GaAs photoconductive semiconductor switch

An experimental study of leakage current is presented in a semi-insulating(SI) Ga As photoconductive semiconductor switch(PCSS) with voltages up to 5.8 kV(average field is 19.3 kV/cm). The leakage current increases nonlinearly with the bias voltage increasing from 1.2×10~(-9)A to 3.6×10~(-5)A. Furthermore, the dark resistance, which is characterized as a function of electric field, does not monotonically decrease with the field but displays several distinct regimes. By eliminating the field-dependent drift velocity, the free-electron density n is extracted from the current, and then the critical field for each region of n(E) characteristic of PCSS is obtained. It must be the electric field that provides the free electron with sufficient energy to activate the carrier in the trapped state via multiple physical mechanisms, such as impurity ionization, fielddependent EL2 capture, and impact ionization of donor centers EL10 and EL2. The critical fields calculated from the activation energy of these physical processes accord well with the experimental results. Moreover, agreement between the fitting curve and experimental data of J(E), further confirms that the dark-state characteristics are related to these field-dependent processes. The effects of voltage on SI-Ga As PCSS may give us an insight into its physical mechanism.     

场致爆炸发射阴极表面微凸起热效应的数值研究

研究场致发射电流密度与阴极表面微凸起顶部的温度之间的高度非线性关系,用数值方法计算在外加宏观电场条件下,不同顶底半径比微凸起的热效应.结果表明:当微凸起顶底半径比值不同时,由于微凸起的微观电场增强因子不同,当微凸起顶部温度达到阴极材料的熔点时,微凸起内部温度分布差异显著;当外加宏观电场相同时,微凸起的顶底半径比越小,爆炸发射延迟时间越短;对于顶底半径比确定的微凸起而言,爆炸电子发射延迟时间随外加宏观电场强度的减小而成指数规律增长.     

Amplification of longitudinal plasma oscillations upon a decrease in plasma concentration

Amplification of plasma oscillations in a homogeneous plasma by reducing its concentration is considered. The frequency of plasma oscillations decreases upon a decrease in the plasma concentration, and the resonant velocity of the plasma electrons, which is equal to the wave phase velocity, also decreases. Due to this, the number of resonant electrons exponentially increases in the equilibrium plasma. Since the energy of plasma oscillations is mainly determined by the contribution of the resonant electrons, this energy also increases exponentially.     

High Current Operation of a Semi-insulating Gallium Arsenide Photoconductive Semiconductor Switch Triggering a Spark Gap

A transient peak current as high as 5.6 kA is obtained by a GaAs photoconductive semiconductor switch （PCSS） in series with a spark gap. Based on the characteristics of the GaAs PCSS, mechanisms of discharge between the PCSS and the spark gap are discussed. It is implied that a hybrid operation mode of photo-activated charge domain occurs due to the superposition of the bias voltage and the instantaneous radio frequency voltage.     

The effects of normal current density and the plasma spatial structuring in argon DBDs

This paper presents the results of theoretical studies of high-pressure dielectric barrier discharges (DBD) in argon. Two different DBDs at the megahertz and the kilohertz power frequency range were simulated. The effect of normal current density was obtained in the numerical model for both types of the discharge. The discharge of megahertz range was uniform over the radius. The increase in the discharge current is accompanied by increase in the discharge area. The discharge of kilohertz range is not uniform over the radius. The concentric ring formation was observed during calculations. The increase in the discharge current occurs due to increase in the number of rings and as a result in the discharge area. The developed 2D model is able to describe only the first stage of the filament formation – the formation of concentric plasma rings. The filament formation starts at the edge of the current channel and spreads to its centre. Both the effect of normal current density and the filaments formation are caused by the nonstationarity at the current channel boundary.