基于半导体光放大器的一阶IIR微波光子学滤波器及其品质因素分析

对基于半导体光放大器(SOA)环形腔结构的一阶无限冲击响应(IIR)微波光子学滤波器的品质因数(Q值)进行了实验和理论研究. 通过在有源环内置入窄带光滤波器，并调节有源环的输入光功率、SOA抽运电流、实验得到的最高Q值接近200. 理论分析表明为了得到较高的Q值，应尽可能提高信噪比和信号光的环路增益. 在考虑了 SOA中放大的自发辐射(ASE)噪声的基础上，计算了输入光功率、SOA抽运电流、环内光滤波器的带宽对Q值的影响. 数值计算的结果与实验现象基 关键词： 微波光子学滤波器 Q值')" href="#">Q值 半导体光放大器 放大的自发辐射

Q value analysis of a first-order IIR microwave photonic filter based on SOA

The Q value of a first-order infinite impulse response (IIR) microwave photonic filter based on a semiconductor optical amplifier (SOA) in a loop is investigated theoretically and experimentally. The maximum Q value measured is around 200 by setting a narrow bandwidth optical filter in the active loop and changing the input optical power of the loop and the pump current of the SOA. Analysis shows that increasing the signal to noise ratio and the gain of the signal light through the loop contributes to achieving higher Q value. The influences of the input optical power, the pump current of the SOA and the bandwidth of the optical filter in the loop on the Q value are calculated, based on the amplified spontaneous emission (ASE) noise of the SOA being investigated. Experimental results are in good agreement with the calculated results.