Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing temperatures |
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| Authors: | Liu Hong-Xi Wu Xiao-Feng Hu Shi-Gang and Shi Li-Chun |
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| Affiliation: | School of Microelectronics, Xidian University, Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education, Xi'an 710071, China |
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| Abstract: | Current transport mechanism in Ni-germanide/n-type Ge
Schottky diodes is investigated using current--voltage
characterisation technique with annealing temperatures from 300~\duto 500~\du. Based on the current transport model, a simple method to
extract parameters of the NiGe/Ge diode is presented by using the
$I$--$V$ characteristics. Parameters of NiGe/n-type Ge Schottky
diodes fabricated for testing in this paper are as follows: the
ideality factor $n$, the series resistance $R_{\rm s}$, the
zero-field barrier height $\phi _{\rm b0}$, the interface state
density $D_{\rm it}$, and the interfacial layer capacitance $C_{\rm
i}$. It is found that the ideality factor $n$ of the diode increases
with the increase of annealing temperature. As the temperature
increases, the interface defects from the sputtering damage and the
penetration of metallic states into the Ge energy gap are
passivated, thus improving the junction quality. However, the
undesirable crystallisations of Ni-germanide are observed together
with NiGe at a temperature higher than 400~\du. Depositing a very
thin ($\sim $1~nm) heavily Ge-doped $n^{+}$ Ge intermediate layer
can improve the NiGe film morphology significantly. |
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| Keywords: | NiGe Schottky diode barrier height parameter extraction |
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