纳米折叠InGaN/GaN LED材料生长及器件特性

在以自组织Ni纳米岛为掩膜制作的n-GaN纳米柱上,利用MOCVD方法外延生长了具有折叠InGaN/GaN多量子阱(MQW)的LED结构外延片,进而制作了LED器件.外延片上中下游的光致荧光测试,结果表明外延片具有很好的均匀性.用该外延片制作的LED的电致发光谱,随注入电流增加没有明显蓝移,这表明纳米结构能更好地释放应力,纳米柱上外延生长的多量子阱,具有较低的压电极化电场.正向工作电流20 mA时,LED器件的工作电压为4.6 V. 关键词： 纳米柱LED 光致发光 电致发光     

蓝光激光器结构中InGaN/GaN多量子阱界面效应的精细光致发光光谱研究

金属有机化学气相沉积（MOCVD）方法制备InGaN/GaN多量子阱结构时,在GaN势垒层生长的N₂载气中引入适量H₂,能够有效改善阱/垒界面质量从而提升发光效率。本工作利用光致发光（PL）光谱技术,对蓝光激光器结构中的InGaN/GaN多量子阱的发光性能进行了精细的光谱学测量与表征,研究了通H₂生长对量子阱界面的调控效应及其发光效率提升的物理机制。室温PL光谱结果显示,GaN势垒层生长载气中引入2.5%的H₂使InGaN/GaN多量子阱的发光效率提升了75%、发光峰的峰位蓝移了17 meV、半峰宽（FWHM）减小了10 meV。通过功率依赖的PL光谱特征分析,我们对InGaN/GaN量子阱中的量子限制Stark效应（QCSE）和能带填充（Band Filling）效应进行了清晰的辨析,发现了发光峰峰位和峰宽的光谱特征主要受QCSE效应影响,H₂的引入能够大幅度降低QCSE效应,并且确定了QCSE效应被完全屏蔽情况下的发光峰能量为2.75 eV。温度依赖的PL光谱数据揭示了通H₂生长量子阱结构中显著减弱的载流子局域化行为,显示界面质量提高有效降低了限制势垒的能量波动,从而导致更窄的发光峰半峰宽。PL光谱强度随温度的变化规律表明,通H₂生长并不改变量子阱界面处的非辐射复合中心的物理本质,却能够显著减少非辐射复合中心的密度,有助于提升量子阱的发光效率。通过时间分辨PL光谱分析,发现通H₂生长会导致量子阱结构中更短的载流子辐射复合寿命,但不影响非辐射复合寿命。载流子复合寿命的变化特征进一步确认了通H₂生长对量子阱结构中QCSE效应和非辐射复合中心的影响规律。综合所有PL光谱分析结果,我们发现通H₂生长能够提高InGaN/GaN多量子阱的界面质量、显著减弱应力效应（更弱的QCSE效应）、降低限制势垒的能量波动以及减少界面处非辐射复合中心的密度,从而显著提升量子阱的发光效率。该研究工作充分显示了PL光谱技术对半导体量子结构发光性能的精细表征能力,光谱分析结果能够为InGaN/GaN多量子阱生长提供有价值的参考。     

GaN基激光器多量子阱垒材料的研究

在(0001)蓝宝石衬底上分别用金属有机化学气相沉积技术外延生长了InGaN/GaN, InGaN/InGaN, InGaN/AlInGaN多量子阱激光器结构, 并分别制作了脊形波导GaN基激光器。同步辐射X射线衍射,电注入受激发射光谱测试及光功率-电流(L-I)测试证明,相对于GaN垒材料,InGaN垒材料,AlInGaN四元合金垒材料更能改善多量子阱的晶体质量,提高量子阱的量子效率及降低激光器阈值电流。相关的机制为：组分调节合适的四元合金垒层中Al的掺入使得量子阱势垒高度增加,阱区收集载流子的能力增强;In的掺入能更多地补偿应力,减少了由于缺陷和位错所产生的非辐射复合中心密度;In的掺入还减小了量子阱中应力引致的压电场,电子空穴波函数空间交叠得以加强,使得辐射复合增加。     

利用选择性外延法生长单芯片双波长白光InGaN/GaN多量子阱结构

为了制备单芯片无荧光粉白光InGaN/GaN多量子阱发光结构,利用选择性外延生长法在SiO2条纹掩膜板上生长出具有梯形形貌的GaN微面结构,并在该GaN微面结构上生长InGaN/GaN多量子阱结构,最终在单芯片上获得了双波长发光.结果表明:梯形GaN微面由(0001)和(11-22)面组成,两者的表面能和极性不同,并且在InGaN/GaN多量子阱生长过程中,In原子和Ga原子迁移速率不同,从而使得(0001)和(11-22)面上的多量子阱具有不同的发光波长;该性质可以使(11-22)面的微面量子阱发出蓝光(峰值波长为420nm),而(0001)面的量子阱发出黄光(峰值波长为525nm),最终形成双波长的复合白光外延结构.     

载流子复合机制对InGaN多量子阱蓝光LED调制带宽的影响

通过设计InGaN多量子阱LED有源区的不同结构,研究了载流子复合机制对LED调制速度的影响。结果显示,由于窄量子阱LED的载流子空间波函数重叠几率更高,且电子泄露效应更显著,所以复合速率更快,调制带宽更高。In组分为1%的InGaN量子垒LED可提高辐射复合的权重,使得调制带宽高于GaN量子垒LED;In组分为5%时,电子泄露和俄歇复合占据主导地位,且由于这两种复合机制复合速率很快,所以调制带宽显著提高。     

Investigation of electron energy states in InGaN/GaN multiple quantum wells

Blue light emitting diodes (LED) consisting of InGaN/GaN multiple quantum wells (MQWs) have been grown by metal organic chemical vapor deposition (MOCVD) on sapphire. The width of the quantum wells (InGaN) was maintained in the range of 3–5 nm with a barrier of 10–15 nm of GaN. Various diagnostic techniques were employed for the characterization of the InGaN/GaN heterostructure. Carrier concentration depth profile from C–V measurements demonstrated the presence of MQWs. The higher value of built-in voltage (15 V) determined from C⁻²–V plot also supported the presence of MQWs as assumed to alter the space-charge region width and hence the intercept voltage. Arrhenius plots due to DLTS spectra from the device revealed at least four energy states (eV) 0.1, 0.12, 0.15 and 0.17, respectively in the quantum wells, with respect to the barrier. Further the photoluminescence spectrum showed an InGaN-based broad band centered at 2.9 eV and the GaN peak at 3.4 eV. A comparison of the PL spectrum with the literature helped to estimate the indium content in the QW (InGaN) and its width to be ∼13% and ∼3 nm, respectively. The results were consistent with the DLTS findings.     

High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier

A new approach to fabricating high-quality AlInGaN film as a lattice-matched barrier layer in multiple quantum wells(MQWs) is presented. The high-quality AlInGaN film is realized by growing the AlGaN/InGaN short period superlattices through metalorganic chemical vapor deposition, and then being used as a barrier in the MQWs. The crystalline quality of the MQWs with the lattice-matched AlInGaN barrier and that of the conventional InGaN/GaN MQWs are characterized by x-ray diffraction and scanning electron microscopy. The photoluminescence(PL) properties of the InGaN/AlInGa N MQWs are investigated by varying the excitation power density and temperature through comparing with those of the InGaN/GaN MQWs. The integral PL intensity of InGaN/AlInGaN MQWs is over 3 times higher than that of InGaN/GaN MQWs at room temperature under the highest excitation power. Temperature-dependent PL further demonstrates that the internal quantum efficiency of InGaN/AlInGaN MQWs(76.1%) is much higher than that of InGaN/GaN MQWs(21%).The improved luminescence performance of InGaN/AlInGaN MQWs can be attributed to the distinct reduction of the barrier-well lattice mismatch and the strain-induced non-radiative recombination centers.     

Strain Effect on Photoluminescences from InGaN MQWs with Different Barriers Grown by MOCVD

InGaN/GaN MQWs, InGaN/AlGaN MQWs and InGaN/AlInGaN MQWs are grown on （0001） sapphire substrates by MOCVD. Membrane samples are fabricated by laser lift-off technology. The photoluminescence spec-ra of membranes show a blue shift of peak positions in InGaN/GaN MQWs, a red shift of peak positions in InGaN/AlGaN MQWs and no shift of peak positions in InGaN/AIlnGaN MQWs from those of samples with substrates. Different changes in Raman scattering spectra and HR-XRD （0002） profile of InGaN/AlInGaN MQWs, from those of InGaN/GaN MQWs and InGaN/AlGaN MQWs, are observed. The fact that the strain changes differently among InGaN MQWs with different barriers is confirmed. The AIlnGaN barrier could adjust the residual stress for the least strain-induced electric field in InGaN/AIlnGaN quantum wells.     

InGaN/GaN多量子阱的组分确定和晶格常数计算

采用金属有机化学气相沉积(MOCVD)技术以蓝宝石为衬底在n型GaN单晶层上生长了InGaN/GaN多量子阱结构外延薄膜，利用高分辨X射线衍射(HRXRD)，卢瑟福背散射/沟道(RBS/channeling)，以及光致发光(PL)技术对InGaN/GaN多量子阱结构薄膜分别进行了平均晶格常数计算、In原子替位率计算和In组分的定量分析.研究表明：InGaN/GaN多量子阱的水平和垂直方向平均晶格常数分别为a_epi=0.3195nm，c_epi=0.5198nm，In原子的替位率为99.3%，利用HRXRD和RBS/channeling两种分析技术计算In的组分分别是0.023和0.026，并与样品生长时设定的预期目标相符合，验证了两种实验方法的准确性；而用室温条件下的光致发光谱(PL)来计算InGaN/GaN多量子阱中In的组分是与HRXRD和RBS/channeling的实验结果相差很大，说明用PL测试In组分的方法是不适宜的. 关键词： InGaN/GaN多量子阱 高分辨X射线衍射 卢瑟福背散射/沟道 光致发光     

Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film

BaTiO3 （BTO） ferroelectric thin films are prepared by the sol,el method. The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode （LED） with amorphous BTO ferroelectric thin film are studied. The photolumineseence （PL） of the BTO ferroelectric film is attributed to the structure. The ferroeleetric film which annealed at 673 K for 8 h has the better PL property. The peak width is about 30 nm from 580 nm to 610 nm, towards the yellow region. The mixed electroluminescence （EL） spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light. The Commission Internationale De L＇Eclairage （CIE） coordinate of EL is （0.2139, 0.1627）. EL wavelength and intensity depends on the composition, microstructure and thickness of the ferroelectric thin film. The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm. This means the amorphous ferroelectrie thin films can output more blue-ray and emission lights. In addition, the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures （200 ℃-400 ℃）. It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED. This provides a new way to study LEDs.     

The optical and structural study of a blue emitting structure with dual InGaN/GaN multiple quantum wells

The authors succeed in fabricating a blue-emitting structure with two series of InGaN/GaN quantum wells, which are different in layer thickness and indium content. The structural and optical properties of the sample were investigated. The upper MQWs works as the main light emitting source area, while the lower MQWs with higher indium content serves as strain releaser. According to the high resolution X-ray diffraction and photoluminescence result, the lower MQWs having the strain released, the upper MQWs succeed in blue emitting with low level indium incorporation, which leads to less piezo-polarization electric field and good crystal quality and high light emitting efficiency.     

Performance Improvement of GaN-Based Violet Laser Diodes

The influences of InGaN/GaN multiple quantum wells(MQWs) and AlGaN electron-blocking layers(EBL) on the performance of GaN-based violet laser diodes are investigated. Compared with the InGaN/GaN MQWs grown at two different temperatures, the same-temperature growth of InGaN well and GaN barrier layers has a positive effect on the threshold current and slope efficiency of laser diodes, indicating that the quality of MQWs is improved. In addition, the performance of GaN laser diodes could be further improved by increasing Al content in the AlGaN EBL due to the fact that the electron leakage current could be reduced by properly increasing the barrier height of AlGaN EBL. The violet laser diode with a peak output power of 20 W is obtained.     

Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow

The performance of an InGaN/GaN multiple quantum well(MQW) based visible-light Schottky photodiode(PD)is improved by optimizing the source flow of TEGa during In Ga N QW growth. The samples with five-pair InGaN/GaN MQWs are grown on sapphire substrates by metal organic chemical vapor deposition. From the fabricated Schottky-barrier PDs, it is found that the smaller the TEGa flow, the lower the reverse-bias leakage is. The photocurrent can also be enhanced by depositing the In GaN QWs with using lower TEGa flow. A high responsivity of 1.94 A/W is obtained at 470 nm and -3-V bias in the PD grown with optimized TEGa flow. Analysis results show that the lower TEGa flow used for depositing In Ga N may lead to superior crystalline quality with improved InGaN/GaN interface, and less structural defects related non-radiative recombination centers formed in the MQWs.     

Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes

In this study, the influence of multiple interruptions with trimethylindium(TMIn)-treatment in InGaN/GaN multiple quantum wells(MQWs) on green light-emitting diode(LED) is investigated. A comparison of conventional LEDs with the one fabricated with our method shows that the latter has better optical properties. Photoluminescence(PL) full-width at half maximum(FWHM) is reduced, light output power is much higher and the blue shift of electroluminescence(EL) dominant wavelength becomes smaller with current increasing. These improvements should be attributed to the reduced interface roughness of MQW and more uniformity of indium distribution in MQWs by the interruptions with TMIn-treatment.     

InGaN蓝光与CdTe纳米晶基白光LED

报道了倒装焊InGaN蓝光LED与黄光CdTe纳米晶的复合结构。利用蓝光作为CdTe纳米晶的激发源,通过光的下转换机制,将部分蓝光转化为黄光,复合发射出白光。室温下正向驱动电流为10mA时,发光色品坐标为x=0.29,y=0.30。实验表明,该复合结构白光LED的一大优点在于,复合光的色品坐标几乎不随正向驱动电流大小变化,颜色稳定。     

Influence of growth parameters on the properties of InGaN/GaN multiple quantum well grown by metalorganic chemical vapor deposition

The effects of growth parameters such as barrier growth time, growth pressure and indium flow rate on the properties of InGaN/GaN multiple quantum wells (MQWs) were investigated by using photoluminescence (PL), high resolution X-ray diffraction (HRXRD), and atomic force microscope (AFM). The InGaN/GaN MQW structures were grown on c-plane sapphire substrate by using metalorganic chemical vapor deposition. With increasing barrier growth time, the PL peak energy is blue-shifted by 18 nm. For InGaN/GaN MQW structures grown at different growth pressures, the PL intensity is maximized in the 300 Torr – grown structure, which could be attributed to the improved structural quality confirmed by HRXRD and AFM results. Also, the optical properties of InGaN/GaN MQW are strongly affected by the indium flow rate.     

High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate

InGaN-based multiple quantum wells (MQWs) yellow light-emitting diodes (LEDs) were grown on Si substrate by metal organic vapor deposition. Blue MQWs were introduced as strain modulation layers for yellow MQWs. The LED chips emitted 72-mW yellow light with 566-nm dominant wavelength and 9.4 % external quantum efficiency (EQE) at 350 mA under room temperature, and it reached a peak EQE of 22.2 % at 0.7 mA. A comparison sample without strain modulation layers exhibited much weaker performance. The results reveal that long-wavelength emission of InGaN system is reliable if the strain of MQWs has been properly modulated.     

InGaN/GaN多量子阱结构发光二极管发光机理转变的低频电流噪声表征

本文对InGaN/GaN多量子阱结构发光二极管开启后的电流噪声进行了测试, 结合低频电流噪声的特点和载流子之间的复合机理, 研究了低频电流噪声功率谱密度与发光二极管发光转变机理之间的关系. 结论表明, 当电流从0.1 mA到10 mA逐渐增大的过程中, InGaN/GaN发光二极管的电流噪声行为从产生-复合噪声逐渐接近于低频1/f噪声, 载流子的复合机理从非辐射复合过渡为电子与空穴之间载流子数的辐射复合, 并具有标准1/f噪声的趋势, 此时多量子阱中的电子和空穴之间的复合趋向于稳定. 本文的结论提供了一种表征InGaN/GaN多量子阱发光二极管发光机理转变的有效方法, 为进一步研究发光二极管中载流子的复合机理、优化和设计发光二极管、提高其发光量子效率提供理论依据.     

Structural and optical properties of an InxGa1−xN/GaN nanostructure

The structural and optical properties of an In_xGa_1−xN/GaN multi-quantum well (MQW) were investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), spectroscopic ellipsometry (SE) and photoluminescence (PL). The MQW structure was grown on c-plane (0 0 0 1)-faced sapphire substrates in a low pressure metalorganic chemical vapor deposition (MOCVD) reactor. The room temperature photoluminescence spectrum exhibited a blue emission at 2.84 eV and a much weaker and broader yellow emission band with a maximum at about 2.30 eV. In addition, the optical gaps and the In concentration of the structure were estimated by direct interpretation of the pseudo-dielectric function spectrum. It was found that the crystal quality of the InGaN epilayer is strongly related with the Si doped GaN layer grown at a high temperature of 1090 °C. The experimental results show that the growth MQW on the high-temperature (HT) GaN buffer layer on the GaN nucleation layer (NL) can be designated as a method that provides a high performance InGaN blue light-emitting diode (LED) structure.     

Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO₃ ferroelectric film

BaTiO3(BTO) ferroelectric thin films are prepared by the sol-gel method.The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode(LED) with amorphous BTO ferroelectric thin film are studied.The photoluminescence(PL) of the BTO ferroelectric film is attributed to the structure.The ferroelectric film which annealed at 673 K for 8 h has the better PL property.The peak width is about 30 nm from 580 nm to 610 nm,towards the yellow region.The mixed electroluminescence(EL) spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light.The Commission Internationale De L’Eclairage(CIE) coordinate of EL is(0.2139,0.1627).EL wavelength and intensity depends on the composition,microstructure and thickness of the ferroelectric thin film.The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm.This means the amorphous ferroelectric thin films can output more blue-ray and emission lights.In addition,the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures(200℃-400℃).It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED.This provides a new way to study LEDs.