弱熔体对流对定向凝固中棒状共晶生长的影响

利用渐近方法求出在弱对流熔体中定向凝固棒状共晶生长的浓度场的渐近解,研究了弱熔体对流对定向凝固中棒状共晶生长的影响.结果表明,弱熔体对流对定向凝固中棒状共晶生长有显著的作用;平均界面过冷度不仅与棒状共晶的棒间距、生长速度有关,还与流动强度有关;当生长速度一定时,随着流动强度增大,棒状共晶的平均界面过冷度减小.利用最小过冷原则,获得棒间距与生长速度和流动强度的关系.结果表明,当生长速度比较小时,随着流动强度增大,棒状共晶的棒间距增大;当生长速度比较大时,随着流动强度增大,棒状共晶的棒间距变化减弱;棒状共晶的生长速度越小,流动对棒状共晶生长的影响越大.利用本文的解析结果计算在对流条件下Al-Cu共晶的棒间距,结果显示随着转速增大或径向距离增大,共晶的间距增大,这与Junze等的实验结果相符合.     

受迫流动下的枝晶生长相场法模拟研究

基于耦合流场和热噪声的相场模型及合理高效的三维动态求解域加速算法,定量模拟了在受迫流动下枝晶的非对称生长及流速对迎流、背流两侧的温度分布和层流层分布的影响.计算结果表明,受迫流动使迎流、背流两侧温度的分布与层流层分布呈现不对称状态,导致迎流侧与背流侧的过冷度不同,而熔体施加于枝晶界面前沿迎流侧的力还不足以抑制过冷度的作用,结果造成枝晶迎流方向优先生长,从而产生倾向于散热方向的倾斜,同时,由于迎流侧的实际过冷度大于背流侧,有利于促进迎流一侧枝晶生长速度以及稳定侧向分枝生长,从而导致了侧向分枝的非对称生长.随     

New approach to the X-ray diffraction analysis of test structures during flow calibration in epitaxial growth reactors

The high-resolution X-ray diffractometry (HRXRD) technique is known as a powerful tool for analyzing epitaxial heterostructures. However, standard analysis procedures do not allow the layer growth time to be used as a fixed parameter during HRXRD spectra analysis. The growth time in modern facilities is measured with a high degree of accuracy, which increases the reliability of HRXRD analysis particularly in the case of spectra with reduced quality or complex heterostructures consisting of a large number of individual homogeneous layers. A new algorithm is based on using flow rates of deposited components as variable parameters, while the layer growth times are taken as fixed parameters. A particular feature of this new approach is associated with the fact that the known growth time for each heterostructure layer is directly included into the algorithm for adjustment of the calculated spectrum to the experimental X-ray diffraction spectrum (HRXRD). The flows of deposited layers are variable parameters and, thus, the algorithm turned out to be very efficient for calibrating flow controllers in epitaxial growth reactors. The algorithm allows for reliable estimation of the flow even in the case of poorly informative HRXRD spectra.     

稳定自然对流下的温度梯度液相外延

介绍了稳定自然对流下的温度梯度液相外延,稳定自然对流由加在溶液上的水平温差产生,用简化模式计算了该生长的生长速率,计算给出:该生长的生长速率与水平温差的平方根成比例;具体对Ga_0.85Al_0.15AS生长,在本工作给定的条件下,生长速率为稳态扩散理论预示生长速率的1124倍,在大部份生长面积内,外延层的厚度变化小于平均厚度的±10％,设计了稳定自然对流下的温度梯度液相外延装置,用该装置生长了厚Ga_1-xAl_xAs层,实 关键词：     

The use of magnetic fields in vertical Bridgman/Gradient Freeze-type crystal growth

This paper outlines advanced vertical Bridgman/Gradient Freeze techniques with flow control using magnetic fields developed for the growth of semiconductor crystals. Low-temperature flow modelling, as well as laboratory-scaled crystal growth under the influence of rotating, travelling, and static magnetic fields are presented. Experimental and numerical flow modelling demonstrate the potential of the magnetic fields to establish a well-defined flow for tailoring heat and mass transfer in the melt during growth. The results of the growth experiments are discussed with a focus on the influence of a rotating field on the segregation of dopants, the influence of a travelling field on the temperature field and thermal stresses, and the potential of rotating and static fields for a stabilization of the melt flow.     

From meandering to faceting, is step flow growth ever stable?

Based on helium atom beam diffraction and scanning tunneling microscopy data, the coexistence of a meandering and a bunching instability during homoepitaxial step flow growth is established in a class of nonreconstructed, metallic vicinal surfaces, Cu (1,1,n), n=5,9,17. Specifically, the meandering instability is shown to act as a precursor to the bunching instability, indicating that a one-dimensional treatment of bunching in step flow growth is not sufficient. Our findings might be generic to step flow growth in kinetically restricted systems.     

Interface evolution of a particle in a supersaturated solution affected by a far-field uniform flow

The effect of far-field uniform flow on the morphological evolution of a spherical particle in a supersaturated solution affected by a far-field uniform flow is studied by using the matched asymptotic expansion method. The analytical solution for the interface shape, concentration field, and interface velocity of the particle growth shows that the convection induced by the far-field uniform flow facilitates the growth of the spherical particle, the upstream flow imposed on the particle enhances the growth velocity of the interface when the flow comes in, the downstream flow lowers the growth velocity of the surface when the flow goes out, and the interface morphology evolves into a peach-like shape.     

Time-resolved observation of CVD-growth of silicon on Si(111) with STM

Scanning tunneling microscopy is used to study the epitaxial growth of silicon on Si(111)-(7×7) by Chemical Vapour Deposition (CVD) of disilane (Si₂H₆) at elevated substrate temperatures directly during the growth process. Different kinetic processes, as island nucleation, growth and coarsening and step flow have directly been imaged as a function of temperature and Si₂H₆ flow. On a substrate with a low defect concentration several growth modes depending on the flux and the total coverage are distinguished: the formation of multi-level islands as a transient mode leaving the substrate partially uncovered up to 20 bilayers, a transition to layer-by-layer growth when the multi-level islands initially formed coalesce and the formation of three-dimensional islands with tetrahedral shape at higher growth rates which are only metastable due to the presence of hydrogen at the surface. The equilibrium shape of two-dimensional islands is a hexagon whereas the kinetically influenced shape during growth is triangular.     

液相对流对定向凝固胞/枝晶间距的影响

采用类金属透明模型合金丁二腈-1.8 wt%丙酮(SCN-1.8 wt%Ace)合金, 研究了平行于生长界面前沿的液相对流对定向凝固胞/枝晶生长行为及胞/枝晶间距的影响. 对于胞晶生长, 在液相对流作用下, 其尖端将会出现分岔, 使得胞晶间距减小, 并且液相对流流速越大, 胞晶尖端分岔越明显, 胞晶组织越细小, 胞晶间距越小. 至于枝晶生长, 其生长行为与胞晶不同. 当抽拉速度较小时, 液相对流作用下枝晶两侧三次臂的生长速度将会超过枝晶尖端生长速度, 形成新的枝晶列, 使得枝晶一次间距减小, 并且液相对流流速越大枝晶一次间距越小; 当抽拉速度较大时, 液相对流作用下迎流侧二次臂生长发达,且会抑制上游枝晶生长, 使得枝晶一次间距增大, 并且液相对流越强枝晶一次间距越大. 关键词： 定向凝固 胞晶间距 枝晶间距 液相对流     

Control of diameter of ZnO nanorods grown by chemical vapor deposition with laser ablation of ZnO

We made a study of controlling diameters of well-aligned ZnO nanorods grown by low-pressure thermal chemical vapor deposition combined with laser ablation of a sintered ZnO target, which was developed by us. Until now, it has been impossible to control diameters of ZnO nanorods, while the growth orientation was maintained well-aligned. In this study we developed a multi-step growth method to fabricate well-aligned nanorods whose diameters could be controlled. Metal Zn vapor and O₂ are used as precursors to grow ZnO nanorods. N₂ is used as a carrier gas for the precursors. A substrate is an n-Si (111) wafer. A sintered ZnO target is placed near the substrate and ablated by a Nd–YAG pulsed laser during ZnO nanorod growth. The growth temperature is 530 C and the pressure is 66.5 Pa. A vertical growth orientation of ZnO nanorods to the substrate is realized in the first-step growth although the diameter cannot be controlled in this step. When an O₂ flow rate is 1.5 sccm, well-aligned nanorods with 100 nm diameter are grown. Next, the second-step nanorods are grown on only the flat tip of the first-step nanorods. The diameters of the second-step nanorods can be controlled by adjusting the O₂ flow rate, and the growth direction is kept the same as that of the first-step nanorods. When the O₂ flow rate in second-step growth is smaller than 0.6 sccm, the diameter of the second-step nanorods is 30–50 nm. When the O₂ flow rate is between 0.75 and 3.0 sccm, the diameter is almost same as that of the first-step nanorods. When the O₂ flow rate is larger than 4.5 sccm, the diameter is increased with increasing O₂ flow rate. Further, the third-step ZnO nanorods with gradually increased diameters can be grown on the second-step nanorods with 1.5 sccm O₂ flow rate and without laser ablation.     

Interfacial evolution of a spherical particle in a uniaximal straining flow

The growth behavior of a spherical particle in undercooled melt,affected by uniaxial straining flows,is studied.The analytical solution obtained by the matched asymptotic expansion method shows that the uniaxial straining flow effect results in higher local growth rate near the surface where the flow comes in and lower local growth rate near the surface where the flow goes out,and that the uniaxial straining flow causes an initially spherical particle to evolve into an oblate spheroid.     

Effect of far-field flow on a columnar crystal in the convective undercooled melt

The growth behavior of a columnar crystal in the convective undercooled melt affected by the far-field uniform flow is studied and the asymptotic solution for the interface evolution of the columnar crystal is derived by means of the asymptotic expansion method.The results obtained reveal that the far-field flow induces a significant change of the temperature around the columnar crystal and the convective flow caused by the far-field flow accelerates the growth velocity of the interface of the growing columnar crystal in the upstream direction and inhibits its growth velocity in the downstream direction.Our results are similar to the experimental data and numerical simulations.     

强制对流和自然对流作用下枝晶生长的数值模拟

建立了一个基于格子玻尔兹曼方法 （LBM） 的二维模型,对强制对流和自然对流作用下合金凝固过程中的枝晶生长行为进行了模拟研究. 与传统的基于求解Navier-Stokes方程计算流场的方法不同,本模型采用基于分子动理论的LBM对凝固过程中的传输现象进行数值计算. 用三组粒子分布函数分别建立了计算流场、由对流和扩散所控制的浓度场和温度场的LBM演化方程. 通过求解LBM演化方程获得固/液界面前沿的浓度和温度分布. 然后,基于溶质平衡方法计算了枝晶生长的驱动力. 为了对模型进行验证,将模拟在强制和自然对流作用下枝晶上游尖端的稳态生长特征分别与Oseen-Ivantsov 解析解和修正的Lipton-Glicksman-Kurz 模型预测结果进行了比较, 模拟结果和理论预测结果符合良好. 模拟结果还表明,对流使热量和溶质从上游传输到下游,从而加速了枝晶在上游方向的生长,而抑制了下游方向的生长,形成了非对称的枝晶形貌. 关键词： 微观组织模拟 枝晶生长 对流 格子玻尔兹曼方法     

Closed tube sublimation growth of Ga2Se2: Solid-vapour equilibria and mass transport2

A detailed study of the real conditions of Ga₂Se₂ growth by sublimation in a closed tube system is presented. Mass flow measurements have been carried out as a function of the cross-section of the silica tubes, the thermal gradient along the growth chamber, and the sublimation temperature. With the aid of the results of pressure measurements, flow rates as a function of growth parameters have been evaluated according to diffusion theory, and compared with experimental flow rates. Useful information about the thermodynamic functions ΔH and ΔS of Ga₂Se₂ has thus been obtained.     

倾斜油水两相流流型混沌吸引子形态周界测度分析

在两维相空间中定义了吸引子形态周界特征量（吸引子面积、长轴、短轴）,考察了吸引子周界特征量随时间延迟的变化规律.发现在吸引子展开过程的第一区域内,其吸引子周界特征量变化率具有不变性.通过对正弦信号、噪声信号和混沌信号进行仿真分析,发现采用吸引子周界特征量可以对这些不同信号进行有效分类.在采集倾斜油水两相流电导波动信号基础上,对水为连续相的倾斜油水两相流流型进行了吸引子形态周界测度分析,发现吸引子面积增长率是描述吸引子形态的不变特征量,该特征量对水为连续相的拟段塞水包油（D O/W PS）和局部逆流水包油（ 关键词： 倾斜油水两相流 流型识别 吸引子形态 周界测度     

远场来流条件下过冷熔体球晶生长的稳定性

建立了远场来流条件下过冷熔体球晶生长的温度场和浓度场稳态模型,分析了对流对球晶周围温度场和浓度场的影响,并以Trivedi的纯扩散球晶稳定性判据为基础,推导出远场来流条件下过冷熔体球晶生长的临界稳定性判据. 研究表明:远场来流条件下,迎流面的扰动振幅增加速率明显大于背流面的扰动振幅增加速率. 振幅增加速率最大值对应的扰动阶次从迎流面到背流面逐渐减小,随着球晶半径增加而增大. 对流使迎流面的稳定性降低,背流面的稳定性增大. 随着流速的增加,球晶的临界稳定半径减小. 关键词： 球晶 远场来流 界面形态稳定性 Trivedi判据     

4H-SiC同质外延生长Grove模型研究

本文通过对4H-SiC同质外延化学反应和生长条件的分析,建立了4H-SiC同质外延生长的Grove模型,并结合实验结果进行了分析和验证.通过理论分析和实验验证,得到了外延中氢气载气流量和生长温度对4H-SiC同质外延生长速率的影响.研究表明:外延生长速率在衬底直径上为碗型分布,中心的生长速率略低于边缘的生长速率;随着载气流量的增大,生长速率由输运控制转变为反应速率控制,生长速率先增大而后逐渐降低;载气流量的增加,会使高温区会发生漂移,生长速率的理论值和实验出现一定的偏移;随着外延生长温度的升高,化学反应速率和气相转移系数都会增大,提高了外延速率;温度对外延反应速率的影响远大于对生长质量输运的影响,当温度过分升高后,外延生长会进入质量控制区;但过高的生长温度导致源气体在生长区边缘发生反应,生成固体粒子,使实际参与外延生长的粒子数减少,降低了生长速率,且固体粒子会有一定的概率落在外延层上,严重影响外延层的质量.通过调节氢气流量,衬底旋转速度和生长温度,可以有效的控制外延的生长速度和厚度的均匀性.     

Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling

Metal organic chemical vapor deposition(MOCVD) growth systems are one of the main types of equipment used for growing single crystal materials, such as GaN. To obtain film epitaxial materials with uniform performance,the flow field and temperature field in a GaN-MOCVD reactor are investigated by modeling and simulating. To make the simulation results more consistent with the actual situation, the gases in the reactor are considered to be compressible, making it possible to investigate the distributions of gas density and pressure in the reactor.The computational fluid dynamics method is used to study the effects of inlet gas flow velocity, pressure in the reactor, rotational speed of graphite susceptor, and gases used in the growth, which has great guiding significance for the growth of GaN film materials.     

Intermittency Growth in Fluid Turbulence

Measurement and phenomenological analyses of intermittency growth in an experimental turbulent pipe flow and numerical turbulence are performed, for which working definitions such as degree, increment, and growth rate of intermittency are introduced with the help of quasiscaling theory. The logarithmic-normal inertial scaling model is extended to quasiscaling as the second-order truncation of the Taylor expansion and is used for studying the intermittency growth problem. The extended self-similarity properties are shown to be not consistent with the monotonicity of the third order local quasiscaling exponent and the nonmonotonic behaviour of the intermittency growth rate as a result of bottleneck. Digestions of the results with scale-dependent multifractals are provided.     

Simulation of free dendritic crystal growth in a gravity environment

In this paper we simulate the evolution and free particle motion of an individual nucleus that grows into a dendritic crystal. The melt flow and the convective heat transfer around the crystal are simulated as they settle due to gravity. There is an intricate coupling between the settling and the evolution of the crystal. The relative flow induced by the settling enhances the growth at the downward facing parts, which in its turn affects the subsequent settling motion.Simulations have been done in two dimensions using a semi-sharp phase-field model. The flow was constrained to a rigid body motion by using Lagrange multipliers inside the solidified part. The model was formulated using two different meshes. One is a fixed background mesh, which covers the whole domain. The other is an adaptive mesh, where the node points are also translated and rotated with the movement of the solid particle. In the latter, the dendritic growth is simulated by the semi-sharp phase-field method.