共查询到19条相似文献,搜索用时 125 毫秒
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超级奥氏体不锈钢中因含有更高铬、钼含量,具有极高的耐点蚀、晶间腐蚀性能,这与Mo等合金元素对钝化膜结构的影响密切相关,尤其含硼超奥钢钝化层表面Cr、Mo含量明显增加,但其原子层次的微观作用机制尚不清楚.本文采用第一性原理方法,研究了置换原子(Mo、Mn、Ni、Si),及间隙原子B在fcc-Fe/Cr2O3界面占位倾向,并分析了可稳定存在于界面B对这些元素偏析倾向的影响.结果表明:Mo、Mn、Ni、Si、B均可与fcc-Fe/Cr2O3界面结构体系形成稳定结构;Mo、Ni倾向分布于界面基体侧,Mo有向氧化层扩散的趋势,B处于fcc-Fe/Cr2O3界面基体侧更稳定,Mn、Si易分布于氧化层中;存在于界面B对四种元素在fcc-Fe/Cr2O3界面体系中的占位影响不同,有利于Mn、Mo偏析于界面基体侧,但抑制Mo向界面基体侧的偏析程度,使得Si、Ni更均匀的分布于基体. Mo等合金元素分布于界面时的态密度来看,界面处M... 相似文献
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采用基于密度泛函理论的第一性原理赝势平面波方法,计算了卤族元素掺杂对金属-MoS_2界面性质的影响,包括缺陷形成能、电子能带结构、差分电荷密度以及电荷布居分布.计算结果表明:卤族元素原子倾向于占据单层MoS_2表面的S原子位置;对于单层MoS_2而言,卤族元素的掺杂将在禁带中引入杂质能级以及导致费米能级位置的移动.对于金属-MoS_2界面体系,结合Schottky-Mott模型,证明了卤族元素的掺杂可以有效地调制金属-MoS_2界面间的肖特基势垒高度.发现F和Cl原子的掺杂将会降低体系的肖特基势垒高度.相比之下,Br和I原子的掺杂却增大了体系的肖特基势垒高度.通过差分电荷密度和布居分布的分析,阐明了肖特基势垒高度的被调制是因为电荷转移形成的界面偶极矩的作用导致.研究结果解释了相关实验现象,并给二维材料的器件化应用提供了调节手段. 相似文献
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通过求解Bogoliubov-deGennes方程,利用推广的Bonder-Tinklam-Klapwijk方法,计算铁磁/绝缘层/铁磁/绝缘层/超导结构中的微分电导(G)和散粒噪声(S)。研究发现系统中的微分电导和散粒噪声都随中间铁磁层厚度作两种不同周斯的振荡,其中通过增强铁磁材料中的交换劈裂和铁磁/超导界面的势垒强度,短周期分量可从长周期中分离出来,反之通过降低铁磁层中的交换劈裂和铁磁/超导界面的势垒强度,长周期分量可从短周期中分离出来,这一结果表明G和S中的两种不同周期的振荡分量分别来自入射电子与铁磁/超导界面处的Andreev反射和正常电子反射的量子干涉效应。 相似文献
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研究了深亚微米PMOS器件在负偏压温度(negative bias temperature, NBT) 应力前后的电流电压特性随应力时间的退化,重点分析了NBT应力对PMOS器件阈值电压漂移的影响,通过实验证明了在栅氧化层和衬底界面附近的电化学反应和栅氧化层内与氢相关的元素的扩散,是PMOS器件中NBT效应产生的主要原因.指出NBT导致的PMOS器件退化依赖于反应机理和扩散机理两种机理的平衡.
关键词:
深亚微米PMOS器件
负偏压温度不稳定性
界面态
氧化层固定正电荷 相似文献
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对以本征Si及重掺杂p型和n型Si作为中间层的Fe/Si多层膜的层间耦合进行研究,并通过退火,增大Fe,Si之间的扩散,分析界面扩散对层间耦合的影响. 实验结果表明,层状结构良好的制备态的多层膜,Fe,Si之间也存在一定程度的扩散,它是影响层间耦合的 主要因素,远远超过了半导体意义上的重掺杂,使不同种类的Si作为中间层的层间耦合基本 一致.进一步还发现,在一定范围内增大Fe,Si之间的扩散,即使多层膜的层状结构已经有了相当的退化,Fe/Si多层膜的反铁磁耦合强度基本保持不变.
关键词:
Fe/Si多层膜
层间耦合
界面扩散 相似文献
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《Current Applied Physics》2020,20(1):132-136
Recently, spintronics devices using MoS2 and ferromagnetic electrode have been in the spotlight. However, strong Fermi level pinning (FLP) is known to occur between MoS2 and ferromagnetic electrode, resulting in a large Schottky barrier height (SBH), which makes it difficult to inject electron from ferromagnetic electrode to semiconductor. To resolve this problem, we study the reduction of FLP occurring between two materials by investigating the effect of atomic passivation at Ni-MoS2 interfaces on contact behaviors. Such atomic passivation can reduce the FLP and magnetic moments induced at S atoms of MoS2. Especially, the largest decrease in the FLP occurs in the case of H atom passivation. Besides, the N, O, and F atom passivation confirms the possibility of ohmic contact, indicated from small SBHs (~0.2 eV). As a result, the SBH and thus the efficiency of the device can be controlled by atomic passivation at metal-semiconductor interfaces. 相似文献
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We have fabricated ferromagnetic/nonmagnetic (FM/NM) metal heterojunctions for the detection of the spin accumulation effect in different nonmagnetic metals. To understand the effect of spin accumulation in more detail, the switching behavior of the ferromagnetic wires was studied by means of magnetoresistance (MR) measurements and Monte Carlo simulations (MC). The polycrystalline heterojunctions were prepared by high-resolution electron beam lithography (HR-EBL) and a special oblique evaporation technique. The ferromagnetic (FM) and the nonmagnetic (NM) metal were evaporated on top of each other in a single-evaporation step to achieve an interface between the two metals of high quality. To verify the quality of the interface, we measured the spin accumulation effect in nonmagnetic copper (Cu) and aluminum (Al) and determined the spin polarization of the current at the interface between the ferromagnetic and nonmagnetic metals. 相似文献
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A NEW METHOD TO ENHANCE THE MAGNETISM OF Fe OVERLAYER ON GaAs(100): SULFUR PASSIVATION USING CH3CSNH2 下载免费PDF全文
Ferromagnetic resonance (FMR) has been used to investigat the magnetism of Fe overlayer on S-passivated GaAs(lO0) pretreated by CH3CSNH2. Comparing with the magnetism of Fe overlayer on clean GaAs(100), we find that sulfur passivation can prevent Aa diffusion into Fe overlayer and weaken the interaction of As and Fe. It results in enhancing the magnetism of Fe overlayer on GaAs(100). We also investigate the effects of the pre-annealing of S- pasaivated GaAs(100) substrate on the magnetism of Fe overlayers. The results show that the maximum effective magnetization can be obtained at annealing temperature of 400℃. According to the experimental results of synchrotron radiation photoemission, it can be explained by the change of chemical composition and surface structure of the passivation layer on GaAs(100) surface after the annealing. 相似文献
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Heterostructures that integrate conventional semiconductors with ferromagnetic semiconductors and ferromagnetic metals are important for developing a framework for semiconductor spintronics. We describe recent efforts to study ‘hybrid’ ferromagnetic/semiconductor heterostructures that combine conventional III-V and II-VI semiconductors with the ferromagnetic semiconductor (Ga,Mn)As and the ferromagnetic metal MnAs. We focus on the characteristics of two novel classes of heterostructures: (a) (Ga,Mn)As/AlAs/MnAs magnetic tunnel junctions (MTJs) that provide an all-electrical scheme for probing spin injection from metals into GaAs and (b) n-ZnSe/(Ga,Mn)As heterojunction diodes that surprisingly exhibit a magnetically-driven photoconductivity. 相似文献
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We performed density functional theory study on electronic structure, magnetic properties and stability of zigzag MoS2 nanoribbons with a S vacancy (ZMoS2NRs-VS) and considered their different edge passivation. The ZMoS2NR-VS systems are magnetic metals with ferromagnetic (FM) edge states. The magnetic moments are greatly influenced by the site of S vacancy and edge passivation because the vacancy and edge states significantly change the structure of the systems. Importantly, we can achieve distinct FM states such as both edge FM and single edge FM states in the ZMoS2NRs-VS by tuning edge passivated pattern. Additionally, edge passivation can not only tune the magnetism of the ZMoS2NRs-VS but also enhance their stability by eliminating dangling bonds. These interesting findings on the ZMoS2NRs may open the possibility of their application in nanodevices and spintronics. 相似文献
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A chemically abrupt Fe/Ce oxide interface can be formed by initial oxidation of an Fe film followed by deposition of Ce metal. Once a Ce oxide layer is formed on top of Fe, it acts a passivation barrier for oxygen diffusion. Further deposition of Ce metal followed by its oxidation preserve the abrupt interface between Ce oxide and Fe films. The Fe and Ce oxidation states have been monitored at each stage using X-ray photoelectron spectroscopy. 相似文献
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Effect of Carrier Differences on Spin Polarized Injection into Organic and Inorganic Semiconductors 下载免费PDF全文
Spin polarized injection into organic and inorganic semiconductors are studied theoretically from the spin diffusion theory and Ohm's law, and the emphases are placed on the effect of the carrier differences on the current spin polarization. The mobility and the spin-flip time of carriers in organic and inorganic semiconductors are different. From the calculation, it is found that current spin polarization at a ferromagnetic/organic interface is higher than that at a ferromagnetic/inorganic interface because of different carriers in them. Effects of the conductivity matching, the spin dependent interracial resistances, and the bulk spin polarization of the ferromagnetic layer on the spin polarized injection are also discussed. 相似文献
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Active dissolution and passivation of transition metals in alkali solutions is of technological importance in batteries. The performance of alkaline batteries is decided by the presence of halides as they influence passivation. Cyclic voltammetric studies were carried out on iron in different sodium hydroxide solutions in presence of halides. In alkali solutions iron formed hydroxo complexes and their polymers in the interfacial diffusion layer. With progress of time they formed a cation selective layer. The diffusion layer turned into bipolar ion selective layer consisted of halides, a selective inner sublayer to the metal side and cation selective outer layer to the solution side. At very high anodic potentials, dehydration and deprotonation led to the conversion of salt layer into an oxide. 相似文献
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最近,旋涂法制备的钙钛矿/平面硅异质结高效叠层太阳电池引起人们广泛关注,主要原因是相比于绒面硅衬底制备的钙钛矿/硅叠层太阳电池,其制备工艺简单、制备成本低且效率高.对于平面a-Si:H/c-Si异质结电池, a-Si:H/c-Si界面的良好钝化是获得高转换效率的关键,进而决定了钙钛矿/硅异质结叠层太阳电池的性能.本文主要从硅片表面处理、a-Si:H钝化层和P型发射极等方面展开研究,通过对硅片表面的氢氟酸(HF)浸泡时间和氢等离子体预处理气体流量、a-Si:H钝化层沉积参数、钝化层与P型发射极(I/P)界面富氢等离子体处理的综合调控,获得了相应的优化工艺参数.对比研究了p-a-Si:H和p-nc-Si:H两种缓冲层材料对I/P界面的影响,其中高电导、宽带隙的p-nc-Si:H缓冲层既能够降低I/P界面的缺陷态,又可以增强P型发射层的暗电导率,提高了前表面场效应钝化效果.通过上述优化,制备出最佳的P-type emitter layer/aSi:H(i)/c-Si/a-Si:H(i)/N-type layer (inip)结构样品的少子寿命与implied-Voc分别达到2855μs和709 mV,表现出良好的钝化效果.应用于平面a-Si:H/c-Si异质结太阳电池,转换效率达到18.76%,其中开路电压达到681.5 mV,相对于未优化的电池提升了34.3 mV.将上述平面a-Si:H/c-Si异质结太阳电池作为底电池,对应的钙钛矿/硅异质结叠层太阳电池的开路电压达到1780 mV,转换效率达到21.24%,证明了上述工艺优化能够有效地改善叠层太阳电池中的硅异质结底电池的钝化及电池性能. 相似文献