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Chemically abrupt interface between Ce oxide and Fe films |
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| Authors: | HG Lee D Lee SG Kim |
| Institution: | a Department of Chemistry and School of Molecular Science (BK21), Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea b Nano-Surface Group, Materials Evaluation Center, Korea Research Institute of Standards and Science, PO Box 102,Yuseong, Daejeon 305-600, Republic of Korea |
| Abstract: | A chemically abrupt Fe/Ce oxide interface can be formed by initial oxidation of an Fe film followed by deposition of Ce metal. Once a Ce oxide layer is formed on top of Fe, it acts a passivation barrier for oxygen diffusion. Further deposition of Ce metal followed by its oxidation preserve the abrupt interface between Ce oxide and Fe films. The Fe and Ce oxidation states have been monitored at each stage using X-ray photoelectron spectroscopy. |
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