(α,β,γ)-Nb5Si3电子结构和光学性质研究

基于第一性原理的密度泛函理论赝势平面波方法,采用局域密度近似,计算了不同结构的α-Nb₅Si₃,β-Nb₅Si₃和γ-Nb₅Si₃的电子结构、态密度以及光学性质.计算结果表明,Nb₅Si₃费米能级附近价带主要是由Nb的4d轨道及Si的3s和3p轨道贡献,导带主要由Nb的4d轨道贡献;Nb₅Si₃的光学性质具有各向异性的特征,其零频介电常数ε₁（0）=207,折射率n₀=13;在15 eV以上的高能区表现为无色透明.     

铁电单晶0.62Pb(Mg1/3Nb2/3)O3-0.38PbTiO3折射率的研究

用最小偏向角法在20℃下精确测量了0.62Pb(Mg_1/3Nb_2/3)O_{3< /sub>-0.38PbTiO3( 0.62PMN-0.38PT)单晶的折射率，给出了该温度下折射率色散的Sellmeier方程.研究了能带 结构与折射率的关系，计算了样品的Sellmeier光学系数：对no，E0=5.50eV,λ0=0.2 26μm，Ｓ０=1.004×10¹⁴m^-2，Ed=28.1 0eV；对ne，Ｅ0=5.57eV,λ 0=0.223μm，S0=1.017×10¹⁴m^-2，Ed=28.10eV.A BO3型钙钛矿材料中，BO6八面体基元决定了晶体的能带结构，对折 射率产生重要影响. 关键词： PMNT单晶 折射率 Sellmeier光学系数}     

LiGaX2(X=S,Se, Te)的电子结构,光学和弹性性质的第一性原理计算

采用基于第一性原理的密度泛函理论赝势平面波方法,对LiGaX₂(X=S, Se, Te)的能带结构、态密度、光学以及弹性性质进行了理论计算. 能带结构计算表明LiGaS₂ 的禁带宽度为4.146 eV, LiGaSe₂ 的禁带宽度为3.301 eV, LiGaTe₂ 的禁带宽度为2.306 eV; 其价带主要由Ga-4p 层电子和X- np 层电子的能态密度决定; 同时也对LiGaX< 关键词： 电子结构 光学性质 弹性性质 LGX     

β-Si3N4电子结构和光学性质的第一性原理研究

采用基于密度泛函的平面波赝势方法(PWP)和广义梯度近似(GGA)，计算了β相氮化硅(β-Si₃N₄)的电子结构和光学性质，得到的晶格常数、能带结构等均与实验结果较好符合.进一步还研究了β-Si₃N₄的光吸收系数以及禁带宽度随外压力的变化规律，为β-Si₃N₄材料在高压条件下的应用提供了理论参考. 关键词： β相氮化硅 电子结构 能带结构 光学性质     

宽带隙半导体CdAl2S4电子结构、弹性和光学性质的研究

采用基于密度泛函理论(DFT)的第一性原理计算方法,对宽带隙半导体CdAl2S4的晶格结构、电学、弹性和光学性能进行了系统的研究. 研究结果表明：CdAl2S4为直接带隙的宽带隙半导体材料;是弹性稳定的具有各向异性的延展性材料;该晶体的光学性质在中能区(3.5 ~12.5 eV)具有较强的各向异性,其强反射峰处于紫外能量区域,因此其可用作紫外光探测或屏蔽材料.     

K,Na掺杂Cu-S纳米晶的水热合成及对结构、性能的影响

利用水热合成技术, 分别以CuCl₂·2H₂O, 硫粉为铜源和硫源, 以KOH或NaOH为矿化剂, 成功合成了Cu₂S纳米晶体和碱金属离子掺杂的KCu₇S₄纳米线和NaCu₅S₃ 微纳米球. 通过X射线衍射(XRD)、电子能谱(EDS)、扫描电镜(SEM)、透射电镜(TEM)和高分辨率透射电镜 (HRTEM) 对产物的结构和形貌进行了表征和分析. 结果显示: KOH含量低于1g或NaOH低于2g时, 产物为斜方辉铜矿Cu₂S; 高碱含量 (不低于3g) 时, K或Na离子成功掺入产物结构中, K掺杂产物为纯净的四方相KCu₇S₄, 单晶结构, 尺寸均匀, 长度可达几十微米的纳米线; Na掺杂未改变产物的形貌, 形成六方晶系结构的NaCu₅S₃. 产物的形成和生长与反应温度、反应时间和矿化剂密切相关. 并讨论了Cu₂S纳米晶及其掺杂纳米晶的形成机理及掺杂机理. 最后研究了碱金属离子掺杂对产物的光学性能的影响, 漫反射光谱显示Cu₂S, KCu₇S₄和NaCu₅S₃纳米晶的光学带隙分别为1.21eV, 0.49eV和0.42eV, K⁺和Na⁺的掺杂, 极大的改变了产物的光学特性. 关键词： 7S₄')" href="#">KCu₇S₄ 5S₃')" href="#">NaCu₅S₃ 水热法 掺杂     

半导体材料AAl2C4(A=Zn, Cd, Hg; C=S, Se)的电子结构和光学性质

采用基于密度泛函理论的第一性原理方法, 对具有缺陷型黄铜矿结构的半导体材料A^ⅡAl₂C₄^Ⅵ(A=Zn, Cd, Hg; C =S, Se)的构型和电子结构进行研究, 并系统考察了各晶体的光学性质. 对于线性光学性质, 五种晶体在红外区和部分可见光区具有良好的透光性能, 其中HgAl₂S₄和HgAl₂Se₄晶体具有适中的双折射率. 在非线性光学性质方面, 该类晶体倍频效应较强, 理论预测得到的二阶静态倍频系数均较大(>20 pm/V). 体系的倍频效应主要来源于价带顶附近以S/Se 价p轨道为主要成分的能带向含有较多Al/Hg 价p成分的空带之间的跃迁. 通过与已商业化的AgGaC₂晶体光学性质的对比, 结果表明HgAl₂S₄和HgAl₂Se₄是一类性能优良的红外非线性光学晶体材料.     

Ge20Sb15Se65薄膜的热致光学特性变化研究

采用磁控溅射法制备了Ge₂₀Sb₁₅Se₆₅薄膜, 研究热处理温度(150—400 ℃)对薄膜光学特性的影响. 通过分光光度计、X射线衍射仪、显微拉曼光谱仪对热处理前后薄膜样品 的光学特性和微观结构进行了表征, 并根据Swanepoel方法以及Tauc公式分别计算了薄膜折射率色散曲线和光学带隙等参数. 结果表明当退火温度(T_a)小于薄膜的玻璃转化温度(T_g)时,薄膜的光学带隙(E_g^opt)随着退火温度的增加由1.845 eV上升至1.932 eV, 而折射率由2.61降至2.54; 当退火温度大于薄膜的玻璃转化温度时,薄膜的光学带隙随退火温度的增加由1.932 eV降至1.822 eV, 折射率则由2.54增至2.71. 最后利用Mott和Davis提出的非晶材料由非晶到晶态的结构转变模型对结果进行了解释, 并通过薄膜XRD和Raman光谱进一步验证了结构变化是薄膜热致变化的重要原因. 关键词： 20Sb₁₅Se₆₅薄膜')" href="#">Ge₂₀Sb₁₅Se₆₅薄膜 热处理 光学带隙 折射率     

应力调控对单层TiOCl2电子结构及光学性质的影响

基于密度泛函理论的第一性原理计算,对单层TiOCl₂的电子结构、输运性质和光学性质进行了理论研究.对单层TiOCl₂材料的声子谱、分子动力学和弹性常数的计算结果表明,该材料在常温下能稳定存在,并具有较好的动力学、热力学和机械稳定性.电子结构分析表明,单层TiOCl₂是一种间接窄带隙半导体(能隙为1.92 eV).在应力调控下,单层TiOCl₂材料的能带结构、输运性质和光学性质均发生明显变化.沿a方向施加-4%的收缩应力后,单层TiOCl₂由间接带隙变为直接带隙,带隙减小至1.66 eV.同时TiOCl₂还表现出明显的各向异性特征,电子沿b方向传输(迁移率约为803 cm~2·V^-1·s^-1),空穴则沿a方向传输(迁移率约为2537 cm~2·V^-1·s^-1).此外,施加收缩应力还会使单层TiOCl₂材料的光吸收率、反射率和透射率的波峰(谷)发生红移...     

第一性原理研究Al掺杂Mn4Si7的电子结构及光学性质

基于密度泛函理论框架下,利用第一性原理计算方法,对本征Mn₄Si₇以及不同Al掺杂浓度下Mn₄Si₇的电子结构及光学性质进行系统计算分析. Mn₄Si₇晶胞中有16个Mn原子及28个Si原子,建立4种Mn_16-xAl_xSi₂₈(x=0,2,4,8)的掺杂模型,计算结果表明：本征Mn₄Si₇的禁带宽度E_g =0.775 eV,属于间接带隙半导体,Al的掺入导致了Mn₄Si₇费米能级附近的电子结构发生改变,导带向低能方向发生偏移,价带向高能方向发生偏移,禁带宽度由0.775 eV降至零,呈现出金属性.计算还表明,在光子能量低能区域,Al的掺入使Mn₄Si₇的介电函数、折射率、吸收及反射系数等光学性质有所提升,改善了Mn₄S...     

Structural, electronic and optical calculations of CaxZn1−xO alloys: A first principles study

First principles density functional calculations, using full potential linearized augmented plane wave (FP-LAPW) method, have been performed in order to investigate the structural, electronic and optical properties of Ca_xZn_1−xO alloy in B1 (NaCl) phase. Dependence of structural parameters as well as the band gap values on the composition x have been analyzed in the range 0?x?1. Calculated electronic structure and the density of states of these alloys are discussed in terms of the contribution of Zn d, O p and Ca p and d states. Furthermore, optical properties such as complex dielectric constants ε(ω), refractive index including extinction coefficient k(ω), normal-incidence reflectivity R(ω), absorption coefficient α(ω) and optical conductivity σ(ω) are calculated and discussed in the incident photon energy range 0-45 eV.     

Theoretical investigation of Cu-containing materials with different valence structure types: BaCu2S2, Li2CuSb,and LiCuS

Optoelectronics research requires cheap materials with a broad spectrum of optical, electronic, and structural properties. The class of Heusler compounds and ternary structures provide many possibilities for finding alternative group IV and III–V semiconductor compounds. This study introduces wider band gap materials for use in solar cells as an alternative to cadmium sulfide buffer layers. The buffer layer is inserted between the absorber layer (p-type) and the transparent window layer (n-type) to enhance the maximum amount of light transmission. Reasonable calculations are reported for the band gaps of copper-containing materials: LiCuS, BaCu₂S₂, and Li₂CuSb. Previous optical analysis measurements of these films determined that the band gaps were 1.8 and 1.9 eV for BaCu₂S₂ and LiCuS, respectively. In general, semiconductor compounds have been studied theoretically, but there are major differences between the experimental and theoretically calculated band gaps. A suitable calculation method for semiconductor compounds is described in this study. For the first time, calculations based on the Engel and Vosko method are introduced for these semiconductor compounds. This method yields band gaps that are comparable to the experimental values, which facilitate the development of microscopic analyses of these compounds. Direct band gaps of 1.15 and 1.7 eV were obtained for BaCu₂S₂ and LiCuS, respectively, whereas the indirect band gap was 0.7 eV for Li₂CuSb.     

First principle study of cubic perovskites: AgTF3 (T=Mg, Zn)

The structural, electronic and optical properties of AgTF₃ (T=Mg, Zn) are calculated for the first time using the full-potential linearized augmented plane wave method within the generalized gradient approximation. Structural parameters of the compounds are found to be in reasonable agreement with the available literature. Both compounds are found to have narrow and indirect band-gaps. The calculated band gap for AgMgF₃ is 0.78 eV and 0.75 eV for AgZnF₃. It is observed that Ag-4d, Zn-3d and Ag-5s states controls the electronic properties of AgMgF₃ and AgZnF₃. The nature of chemical bonding in these compounds is discussed by the electron density plots. The results of complex dielectric constant, refractive index, normal-incidence reflectivity and optical conductivity are also presented in the incident photon energy range of 0-35 eV. The wide absorption energy range makes these materials suitable for different devices applications.     

Structural, elastic, electronic and optical properties of a new layered-ternary Ta4SiC3 compound

We propose a new layered-ternary Ta₄SiC₃ with two different stacking sequences (α- and β-phases) of the metal atoms along c axis and study their structural stability. The mechanical, electronic and optical properties are then calculated and compared with those of other compounds M₄AX₃ (M=V, Nb, Ta; A=Al, Si and X=C). The predicted compound in the α-phase is found to possess higher bulk modulus than these compounds. The independent elastic constants of the two phases are also evaluated and the results discussed. The electronic band structures for α- and β-Ta₄SiC₃ show metallic conductivity. Ta 5d electrons are mainly contributing to the total density of states (DOS). We see that the hybridization peak of Ta 5d and C 2p lies lower in energy and the Ta 5d-C 2p bond is stronger than Ta 5d-Si 3p bond. Further an analysis of the different optical properties shows the compound to possess improved behavior compared to similar types of compounds.     

N掺杂锐钛矿TiO2光学性能的第一性原理研究

用平面波赝势方法(PWP)计算了N掺杂锐钛矿型TiO₂前后的光学特性,即介电函数虚部ε₂(ω)，光学吸收系数I(ω)和反射率R(ω). 并从能带结构上解释了为什么掺N后锐钛矿型TiO₂的光学谱在2.93，3.56和3.97eV处相对掺杂前会出现3个峰值的原因. 从光谱图上分析得出，掺杂后TiO₂要发生红移现象，实验现象证实了这一结果. 关键词： N掺杂 2')" href="#">锐钛矿型TiO₂ 光学性能 第一性原理     

Optical and electronic properties of NiFe2O4 and CoFe2O4 thin films

We report the optical and electronic properties of the inverse spinel ferrite NiFe₂O₄ and CoFe₂O₄ thin films deposited on single crystal sapphire by electron beam deposition. We carried out variable temperature (78–500 K) transmittance measurements on the thin films to investigate the optical properties and electronic structures of these ferrites. The absorption spectra of both NiFe₂O₄ and CoFe₂O₄ thin films show insulating characters with Ni (Co) d to d on-site transitions below 3 eV. The energy bands above 3 eV are mainly due to the O 2p to Fe 3d charge transfer transitions. The observed electronic transitions have been assigned based on the first principles calculations and comparisons with structurally similar Ni and Co-containing compounds. The Co²⁺ d to d transition in the CoFe₂O₄ thin film shows a strong temperature dependence, likely due to the spin-charge coupling effect.     

Ab initio study of the linear and nonlinear optical responses in BiAlO3

The linear and non-linear optical properties of BiAlO₃ are studied by employing the density functional perturbation theory within the local density and generalized gradient approximations. The computations are based on the electronic structure obtained within density functional theory. The optical properties such as the dielectric function, refractive index, spectral reflectivity, absorption coefficient and electron energy-loss spectrum are obtained in the energy region of up to 30 eV. The calculated value of the birefringence for BiAlO₃ shows that it is a uniaxial negative crystal and has a large birefringence. We also report our studies on the second harmonic generation response coefficient over a large frequency range for BiAlO₃ crystal. The predicted second-order optical spectra indicate pronounced structures related to of 1ω and 2ω frequency resonances. Furthermore, the non-linear optic and linear electro-optic coefficients are computed by employing 2n + 1 theorem applied to an electric-field dependent energy functional. The results are compared with the available calculations.     

Electronic structure and optical properties of wurtzite-kesterite Cu2ZnSnS4

As promising light-absorber material for solar cells, Cu₂ZnSnS₄ was found to have another crystal structure (wurtzite-kesterite) in addition to the conventional zinc blende-kesterite structure. Structural flexibility of Cu₂ZnSnS₄ opens up an avenue to develop light-absorber material with novel exciting properties and applications. However, its electronic and optical properties have not been comprehensively studied yet. For this purpose, the method of density functional theory within hybrid functional of PBE0 was adopted to study the structural, electronic, and optical properties of wurtzite-kesterite Cu₂ZnSnS₄ in this Letter. The calculated results suggested that the energy of its band gap is about 1.372 eV and it has obvious optical anisotropy. Furthermore, its crystal structure leads local internal fields that are especially beneficial to suppress the recombination of photoexcited electron–hole pairs.     

Reflectivity of Sn(Se1-xSx)2 mixed crystals

Reflectivity measurements in fundamental absorption range (3.6–13 eV) have been made on Sn(Se_1-xS_x)₂ mixed compounds for several compositions (x = 0.0, 0.1, 0.3, 0.5, 0.7, 0.9, 1.0). The composition dependence of the energy location of the reflectivity structures is found to be non-linear and different according to the electronic transitions involved. This behaviour is discussed in terms of electronic structure evolution related to the anion substitution.     

Electronic structure calculations and optical properties of a new organic-inorganic luminescent perovskite: (C9H19NH3)2PbI2Br2

(C₉H₁₉NH₃)₂PbI₂Br₂ compound is a new crystal belonging to the large hybrid organic-inorganic perovskites compounds family. Optical properties are investigated by optical absorption UV-visible and photoluminescence (PL) techniques. Bands to band absorption peak at 2.44 eV as well as an extremely strong yellow-green photoluminescence emission at 2.17 eV is observed at room temperature. First principle calculations based on the DFT and FLAPW methods combined with LDA approximation are performed as well. Density of state close to the gap is presented and discussed in terms of optical absorption and photoluminescence experimental results. The perfect agreement between experimental data and electronic structure calculations is highlighted.