用反向渐变波导提高远红外自由电子激光器效率

在高效率和低电流小信号范围内,理论地分析了用反向渐变波导提高远红外波导自由电子激光器(FIR-FEL)效率的机理.并用单粒子模型进行了一维数值模拟,得到了令人鼓舞的结果.     

远红外自由电子激光器和螺旋电流扭轨磁体

报道了作者近年来在美国斯坦福大学直接参与合作研制的１００μｍ－１０００μｍ可调谐远红外自由电子激光器概况，以及研制过程中所运用的独创的新技术。文中对它的主要部件扭轨磁全体的新型设计和磁场特性进行了深入的分析和研究。     

中物院远红外自由电子激光实验研究

中国工程物理研究院基于射频直线加速器技术的远红外自由电子激光(FIR-FEL)实验取得阶段性进展,于2005年3月24晚8时30分首次出光, 并多次重复. 中心波长115μm, 谱宽1%.介绍了实验系统的主要组成部分和主要实验结果.     

Directly laser-written integrated photonics devices including diffractive optical elements

Femtosecond laser-written integrated devices involving Fresnel Zone Plates (FZPs) and waveguide arrays are demonstrated as built-in optical couplers. These structures were fabricated in borosilicate glass using a direct laser writing technique. The optical properties of these integrated photonic structures were investigated using CW lasers and high-resolution CCDs. For a single FZP coupled to a single waveguide, the overall coupling efficiency was 9%. A multiplexed optical coupler composed of three FZP layers was demonstrated to couple three waveguides simultaneously in a waveguide array. Structures of this type can be used as platforms for multichannel waveguide coupling elements or as microfluidic sensors that require higher light collecting efficiency.     

Study of RF Excited CO2 Waveguide Laser Array

RF excited CO2 waveguide laser arrays with three different structures (one-dimension and two-dimension) are reported in this paper. The output character of far-field and near-field of those lasers have studies and the phase locking between the waveguide elements has discussed. The cavity length of waveguide laser array is 380 mm and the resonator is formed by placing a plane germanium coated gold mirror and a plane ZnSe output coupler. The laser is operated with filling static gas of He∶N2∶CO2∶Xe=3∶1∶1∶0.1 mixture at 1.06×104 Pa total pressure. High output power density is achieved and the output power is 30-w with an efficiency η=10%. The output power is limited by the maximum power of RF transmitter.     

Second harmonic generation by femtosecond Yb-doped fiber laser source based on PPKTP waveguide fabricated by femtosecond laser direct writing

The frequency doubling of femtosecond pulses from an Yb-doped fiber laser source was demonstrated in a PPKTP waveguide fabricated by femtosecond laser direct writing. The PPKTP waveguide contains a fixed period of 8.9 μm and the feomtosecond fundamental pulses have a central wavelength of 1044 nm. A maximum SHG power of 406 mW was produced, yielding a conversion efficiency of 5.6%. Numerical simulations were carried out to investigate the property of frequency doubling for femtosecond pulses. The results show that the SHG process proceeds even the quasi-phase-matching (QPM) condition is not well satisfied, which is significantly different from that of “long” pulses or CW light and is accorded with the experimental results.     

Study of RF Excited CO 2 Waveguide Laser Array

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高功率、高效率808nm半导体激光器阵列

通过设计高效率808 nm非对称宽波导外延结构,减少P型波导层和包层的自由载流子光吸收,实现腔内光吸收损耗为0.63 cm~(-1).制备的808 nm半导体激光器阵列在室温25?C下,实现驱动电流135 A,工作电压1.76 V,连续输出功率大于150 W,斜率效率高达1.25 W/A,中心波长809.3 nm,器件最高电光转换效率为65.5%,这是目前国内报道的808 nm半导体激光器阵列的最高电光转换效率,达到国际同类器件最好水平.     

808 nm高占空比大功率半导体激光器阵列

 采用渐变折射率分别限制单量子阱宽波导结构,通过降低非辐射复合、有源层载流子泄露、散射和吸收损耗来提高出射效率和降低激光阈值电流,从而提高半导体激光器阵列的输出功率;同时使P面具有更高的粒子掺杂数密度,优化N面合金条件,降低半导体激光器的串联电阻,降低焦耳热,提高了半导体激光器阵列的转换效率。利用金属有机化学气相淀积技术生长GaInAsP/InGaP/AlGaAs渐变折射率分别限制单量子阱宽波导结构激光器材料,利用该材料制成半导体激光线阵列在20%高占空比的输入电流下,半导体激光器的输出峰值功率达到189.64 W(180 A),斜率效率为1.1 W/A,中心波长为805.0 nm,阈值电流为7.6 A,电光转换效率最高可达55.4%;在1%占空比的输入电流下,阵列的输出峰值功率可达324.9 W(300 A),斜率效率为1.11 W/A,阈值电流为7.8 A,电光转化效率最高达55.6%,中心波长为804.5 nm。     

低阈值单横模852nm半导体激光器

基于波导理论、等效折射率方法,设计并制备了非对称波导隔离双沟结构脊型边发射激光器,最终获得了低闽值单基侧模852 nm激光器.详细研究了不同脊型台深宽比参数设计对激光器侧向模式特性的影响规律,实现了腔面未镀膜情况下脊型波导边发射激光器的单基侧模稳定输出,同时激射波长可以精确调谐到852 nm;工作电流达到150 mA,工作温度30℃;斜率效率最高可达0.89 nW/mA,光谱半宽小于1 nm.研究结果为进一步实现超窄线宽激光器提供了参考和借鉴,并且为实现激光器稳定输出提供了实验基础.     

Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes

Performances of blue and green laser diodes(LDs) with different u-InGaN upper waveguides(UWGs) are investigated theoretically by using LASTIP. It is found that the slope efficiency(SE) of blue LD decreases due to great optical loss when the indium content of u-InGaN UWG is more than 0.02, although its leakage current decreases obviously. Meanwhile the SE of the green LD increases when the indium content of u-InGaN UWG is varied from 0 to 0.05, which is attributed to the reduction of leakage current and the small increase of optical loss. Therefore, a new blue LD structure with In_(0.05) Ga_(0.95)N lower waveguide(LWG) is designed to reduce the optical loss, and its slope efficiency is improved significantly.     

条形半导体激光器光束质量因子M2的理论计算

通过一个二维半矢量模型求得纯折射率导引脊形波导和掩埋波导这两种常见平面条形半导体激光器波导结构的模式光场分布，现通过描述光束传播的非傍轴矢量二阶矩，通过平面波谱的方法获得激光器出射光束在横向和侧向上的束腰、远场发散角和M^2因子。讨论了波导结构参量变化对M^2因子的影响，并对两种波导结构光束的性质与波导参量的关系进行了比较。     

12 W高功率高可靠性915 nm半导体激光器设计与制作

本文设计并制作了一种高效率、高可靠性的915 nm半导体激光器。半导体激光器是光纤激光器的关键部件,为了最大限度地提高器件的电光转换效率,在设计上采用双非对称大光腔波导结构,同时对量子阱结构、波导结构、掺杂以及器件结构进行了系统优化。器件模拟表明,在25℃环境温度下,器件的最高电光转换效率达到67%。采用金属有机气相沉积(MOCVD)法进行材料生长,随后制备了发光区域宽度为95μm、腔长为4.8 mm的激光芯片。测试表明,封装后器件的效率以及其它参数指标达到国际先进水平,在室温下阈值电流为1 A,斜率效率为1.18 W/A,最高电光转换效率达66.5%,输出功率12 W时,电光转换效率达到64.3%,测试结果与器件理论模拟高度吻合。经过约6 000 h的寿命加速测试,器件功率没有出现衰减,表明制作的高功率915 nm激光芯片具有很高的可靠性。     

Manufacturing of Nd:Gd3Ga5O12 ridge waveguide lasers by pulsed laser deposition and ultrafast laser micromachining

Laser radiation is used both for the deposition of the laser active thin films and for the micro structuring to define wave guiding structures for the fabrication of waveguide lasers. Thin films of crystalline and amorphous neodymium doped Gd₃Ga₅O₁₂ are grown on single crystal yttrium aluminium garnet by pulsed laser deposition using excimer laser radiation.Manufacturing of the laser active waveguides by micro structuring is done using femtosecond laser ablation of the deposited films. The structural and optical properties of the films and the morphology of the structured waveguides are determined in view of the design and the fabrication of compact and efficient diode pumped waveguide lasers. The resulting waveguides are polished, provided with resonator mirrors, pumped using diode lasers and the waveguide lasers are characterized. The spectroscopic properties of the amorphous waveguide are investigated and an infrared waveguide laser is demonstrated. To our knowledge, there have been no reports by other groups of the successful operation of a structured waveguide laser fabricated by this technique or of a waveguide laser made from amorphous neodymium doped Gd₃Ga₅O₁₂.     

Investigation of Far Infrared Waveguide Free Electron Laser Driven by RF Linac

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基于光纤环形腔激光器的可调谐全光波长转换器的研究

在光纤环形腔激光器中引入周期极化反转铌酸锂(PPLN)光波导，用该激光器产生的连续光作为抽运光和控制光，使其与外加的信号光发生非线性效应实现可调谐波长转换.介绍了基于准相位匹配的PPLN光波导中的和频与差频级联型全光波长转换器的基本原理.对抽运光、信号光、控制光以及转换光的光功率随着PPLN光波导的变化进行了模拟.还对转换效率随着转换光波长的变化进行了数值计算.实验验证了该波长转换器的可调谐性. 关键词： 周期极化反转铌酸锂 和频与差频 可调谐全光波长转换 光纤环形腔激光器     

Characteristics of Semi-conductor Laser Diode with Nonlinearly Tapered Waveguide

A novel semiconductor laser diode with nonlinearly tapered waveguide is proposed, and analyzed by a finite element beam propagation method (FM-BPM). The results show that the coupling efficiency is increased, and the laser's far field divergence is decreased effectively.     

基于飞秒激光写制波导的PPKTP晶体倍频实验研究

在PPKTP晶体上进行了飞秒激光刻写波导的实验研究,优化了c-切PPKTP晶体中写制二型波导的工艺参数.当波导长度为10mm,宽度为14.5μm,准相位匹配波长为1064nm时,实现了单模传输.利用该波导对调QNd:YAG激光进行了准相位匹配倍频实验,实现的二次谐波转换效率为39.8%.     

射频激励扩散型冷却板条波导千瓦CO激光器

报道了一种射频激励扩散型冷却千瓦 CO板条波导激光器。其上下两电极均采用液氮冷却 ,射频气体放电激励频率为 90 MHz,板条状波导增益区为 178mm(宽 )× 2 mm (高 )× 50 0 mm(长 )。气体是配比为 2 4 :71:4 :1的 CO、He、Xe、O2 混合气。所用的激光谐振腔由一个离轴虚焦非稳腔和一个平面后反馈镜构成。实验中 ,获得了 10 2 0瓦的 CO激光功率输出     

Study of a Waveguide CO_2 Laser with Two Parallel Tubes

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