共查询到19条相似文献,搜索用时 484 毫秒
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通过棱镜耦合激发非对称金属包覆介质波导结构中的TE0导波模式, 利用两束TE0模的干涉从理论上实现了周期可调的亚波长光栅刻写. 分析了TE0模式的色散关系, 刻写亚波长光栅的周期与激发光源、棱镜折射率、光刻胶薄膜厚度及折射率之间的关系. 用有限元方法数值模拟了金属薄膜、光刻胶薄膜和空气多层结构中TE0导模的干涉场分布. 研究发现, 激发光源波长越短, TE0 模干涉刻写的亚波长光栅周期越小; 光刻胶越厚, 刻写的亚波长光栅周期越小; 高折射率光刻胶有利于更小周期亚波长光栅的刻写. 相较于表面等离子体干涉光刻, 基于TE0 模的干涉可在厚光刻胶条件下通过改变激发光源、棱镜折射率、光刻胶材料折射率、特别是光刻胶薄膜的厚度等多种方式实现对亚波长光栅周期的有效调控. 相似文献
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镀膜长周期光纤光栅(LPFG)工作于相位匹配转折点时纤芯模与高次包层模的耦合产生单个宽带损耗峰,其3 dB带宽取决于纤芯模和包层模之间的色散差、光栅长度以及中心波长.研究表明,薄膜折射率和厚度的变化将影响纤芯模与包层模之间的色散差,从而影响损耗峰的3 dB带宽,同时损耗峰中心波长亦随之移动.薄膜折射率为1.57,厚度为350 nm时,损耗峰带宽可达302 nm.减小光栅长度在保证中心波长损耗大于6 dB的前提下可使损耗峰3 dB带宽增大至334 nm.进一步研究表明,在均匀LPFG中偏离光栅中点的适当位置引入单个π相移可以使带宽增大至372 nm以上. 相似文献
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对渐变折射率薄膜替代均匀膜系作为高功率激光反射膜的可行性进行了理论研究。以较容易获得的线性共蒸法制备的光学膜在中心波长为1 064 nm的激光作用为例,分析了薄膜与基体之间波长的匹配、场强分布等问题。提出了通过改变微小单元获得梯度膜匹配厚度的数值方法,将之运用在14个周期结构的梯度膜中,并由膜系计算软件验证了所获得结果。最后通过分析Maxwell方程,计算了梯度膜中与薄膜损伤密切相关的电场强度分布。结果表明:周期性结构梯度高反射膜中的电场分布与传统高反射膜具有相似性,但相对于传统高反射膜容易在界面处出现损伤的情形而言,梯度膜更容易在表面出现损伤,使梯度膜表面反射相移接近π是高功率梯度高反射膜的设计方向。 相似文献
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超宽带减反射膜的设计和制备 总被引:3,自引:0,他引:3
设计了400~900 nm波段上的超宽带减反射膜,在410~850 nm范围内的平均残余反射率设计值约为0.2%,在设计的全波段上约为0.24%.讨论了初始膜系结构的选择原则,分析了带宽、膜层折射率差、最外层折射率和膜层总厚度等因素对宽带减反射特性的影响.对特定的带宽.增加两种薄膜材料的折射率差和选择尽可能低的最外层折射率对获得优良的减反射特性是非常重要的.实验制备了K9玻璃上TiO2/MgF2两种材料组成的8层结构的超宽带减反射膜,实测结果表明,在带宽520 nm范围内的平均残余反射率约为0.44%,说明用二种材料设计超宽带减反射膜是成功的,对垂直入射的减反射膜.多种材料的膜系并不比两种材料更具优越性. 相似文献
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在洁净K9玻璃基底上沉积TiO2薄膜,将透射光谱和X射线反射光谱相结合分析获得膜层的厚度和光学常数。X射线反射谱拟合能精确得到膜层的厚度、电子密度及表面和界面粗糙度,其中膜层厚度的数值为透射光谱的分析提供了重要参考。基于Forouhi-Bloomer色散模型拟合膜层透射光谱,得到薄膜折射率和消光系数,理论曲线和实验曲线吻合良好。对于同一样品,两种光谱拟合分析得到的厚度数值非常接近,差值最大为4.9nm,说明两种方法的结合能够提高光学分析结果的可靠性。 相似文献
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针对1 064, 532 和 680 nm波长激光, 以聚碳酸酯 (PC) 为镀膜基底, 钕玻璃激光中心波长为1 064 nm, 采用六分之一加三分之一膜系的反射膜系设计,以氧化锆为高折射率膜层材料,氯化酞菁铝掺杂的氧化硅为低折射率膜层材料,通过溶胶-凝胶法镀21层膜,并在多层反射膜与PC基底之间插入张力匹配层,实现了钕玻璃激光器1 064 nm主频和532 nm二倍频波长激光的反射,以及680 nm波长红宝石激光的同时吸收,1 064,532和680 nm波长处的透射率分别为1.67%,18.24%和2.4%。 相似文献
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Chirped mirrors (CMs) are designed and manufactured. The optimized CM provides a group delay dispersion (ODD) of around -60fs^2 and average reflectivity of 99.4% with bandwidth 200 nm at a central wavelength of 800nm. The CM structure consists of 52 layers of alternating high refractive index Ta2O5 and low refractive index SiO2. Measurement results show that the control of CM manufacturing accuracy can meet our requirement through time control with ion beam sputtering. Because the ODD of CMs is highly sensitive to small discrepancies between the layer thickness of calculated design and those of the manufactured mirror, we analyze the error sources which result in thickness errors and refractive index inhomogeneities in film manufacture. 相似文献
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研究了由Ta2O5和SiO2组成的多层氧化物激光薄膜的双离子束溅射制备工艺。简要介绍了离子束溅射技术的基本工作原理和应用,着重分析了薄膜厚度均匀性的调控方法。先后得到了Ta2O5和SiO2单层薄膜厚度均匀性调控结果以及不同波长处薄膜折射率,并定性地分析比较了离子束溅射和电子束蒸发制备的薄膜结构;制备并测试了633nm,1 315nm反射薄膜以及增透膜。结果表明:采用离子束溅射技术能够制备出优良的、满足需要的激光高反射薄膜元件。 相似文献
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比较银介电常数三种色散模型对光学Tamm态的影响,根据三种色散模型的复折射率随波长的变化研究银-光子晶体-银结构TE波和TM波的光学Tamm 态随入射角、银层厚度及周期数的变化.得出:三种色散模型下银-光子晶体-银结构中都会出现两个光学Tamm 态(OTS1和OTS2).三种色散模型下的光学Tamm 态的波长随入射角、银层厚度及周期数的变化规律一致.但是光学Tamm 态的透射峰值随入射角、银层厚度及周期数的变化规律不一致.Drude-Lorentz模型和Lorentz模型能够描述银的特征,而Drude模型不能. 相似文献
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S. Bosch 《Applied Physics A: Materials Science & Processing》1992,54(5):431-436
A simple procedure to minimize the number of trial-and-error high-vacuum depositions required to manufacture a thin film filter prototype is presented. For optical coatings obtained by thermal evaporation, the main difficulty is the accurate characterization (refractive index and thickness) of the layers under the actual deposition conditions. The proposed method is able to describe dispersion as well as inhomogeneity in the refractive index of the component layers. It requires only a suitable substrate holder attachment and standard thin film measurement equipment: a spectrophotometer and a three wavelength ellipsometer. The technique is illustrated with the development of an anti-reflection (AR) coating for glass which also includes an inhomogeneous layer. 相似文献
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Glancing-angle deposition (GLAD) is a fabrication method capable of producing thin films with engineered nanoscale porosity variations. GLAD can be used to create optical thin-film interference filters from a single source material by modification of the film refractive index through control of film porosity. We present the effects of introducing a layer of constant low density into the center of a rugate thin-film filter fabricated with the GLAD technique. A rugate filter is characterized by a sinusoidal refractive-index profile. Embedding a layer of constant refractive index, with a thickness equal to one period of the rugate index variation, causes a narrow bandpass to appear within the filter's larger stop band. Transmittance measurements of such a gradient-index narrow-bandpass filter, formed with titanium dioxide, revealed an 83% transmittance peak at a vacuum wavelength of 522 nm, near the center of the stop band, with a FWHM bandwidth of 15 nm. 相似文献
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H.F. Mahlein 《Optics & Laser Technology》1973,5(2):60-68
The results of computer calculations concerning the reflectivity in the stop-band at normal incidence are given for periodic multilayer systems made out of layers of ZnS and MgF2 of equal optical thickness. General formulae are derived to distinguish between the maxima and minima of the reflectivity at the centre of the stop-bands and for the calculation of the width of the stop-band of higher order mirrors as a function of the wavelength.The bandwidth of higher order mirrors and the reflectivity at the centre of the stop-band are presented in a number of graphs for systems with up to 18 layers on substrates with varying refractive index. Quarter-wave layer anti-reflection coatings are treated as special cases. The process of designing laser mirrors can be simplified using the graphs. They may also be useful during the evaporation process when thickness monitoring is done by optical methods. An example of a partially reflecting mirror is given. This uses a flat minimum of reflectivity at the centre of the stop-band to obtain an almost constant reflectivity over the total width of the stop-band. 相似文献
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采用平面波法(PWM)计算一维光子晶体的带隙结构。分别就构造一维光子晶体结构的高低折射膜层的介电常数及填充比(高折射膜层的厚度与晶体周期长度的比值)对禁带带隙宽度的影响作出分析。通过最小二乘曲线和曲面拟合得到带宽与介电常数或带宽与填充比的函数关系图,以确定最佳的禁带带宽,从而设计一维光子晶体的周期结构。对高低折射膜层为GaAs/空气组成的一维光子晶体,介电常数比约为13/1,当填充比为0.16时,计算得禁带带宽为0.2564×2πc/Λ,禁带的中心频率为0.3478×2πc/Λ,与实验数据吻合。 相似文献
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研究了一种基于棱镜基底-辅助电介质层-金膜-待测介质四层结构的表面等离子体共振(surface plasmon resonance,SPR)效应激励模型.采用薄膜光学与波导理论,探索了由辅助电介质层与金膜复合而成共振薄膜对SPR效应的激励机理与调制特性.借助时域有限差分方法,数值模拟得到辅助电介质层属性与共振能量传输特性关系.在此基础上,构建了波长调制型棱镜辅助电介质层结构SPR激励系统.研究结果表明,当待测介质折射率相同时,相较基于棱镜基底-金膜-待测介质三层结构的Kretschmann激励模型,辅助电介质层激励模型共振光谱整体向长波方向偏移且半波宽度出现显著展宽效应.而当待测介质折射率增大时,辅助电介质层型激励模型的共振光谱不仅会向长波方向偏移,而且折射率响应灵敏度比棱镜Kretschmann三层激励模型高出75%.因此该模型能够为诸如高灵敏度检测、新型光学滤波与调制器件设计等领域的研究应用提供理论与实践储备. 相似文献
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Refractive index inhomogeneity is one of the important characteristics of optical coating material, which is one of the key factors to produce loss to the ultra-low residual reflection coatings except using the refractive index inhomogeneity to obtain gradient-index coating. In the normal structure of antireflection coatings for center wavelength at 532 nm, the physical thicknesses of layer H and layer L are 22.18 nm and 118.86 nm, respectively. The residual reflectance caused by refractive index inhomogeneity(the degree of inhomogeneous is between -0.2 and 0.2) is about 200 ppm, and the minimum reflectivity wavelength is between 528.2 nm and 535.2 nm. A new numerical method adding the refractive index inhomogeneity to the spectra calculation was proposed to design the laser antireflection coatings, which can achieve the design of antireflection coatings with ppm residual reflection by adjusting physical thickness of the couple layers. When the degree of refractive index inhomogeneity of the layer H and layer L is-0.08 and 0.05 respectively, the residual reflectance increase from zero to 0.0769% at 532 nm. According to the above accuracy numerical method, if layer H physical thickness increases by 1.30 nm and layer L decrease by 4.50 nm, residual reflectance of thin film will achieve to 2.06 ppm. When the degree of refractive index inhomogeneity of the layer H and layer L is 0.08 and -0.05 respectively, the residual reflectance increase from zero to 0.0784% at 532 nm. The residual reflectance of designed thin film can be reduced to 0.8 ppm by decreasing the layer H of 1.55 nm while increasing the layer L of 4.94 nm. 相似文献