软X光能谱仪探测元件响应曲线标定

报道了软X光能谱仪探测元件的能量响应曲线标定工作.实验利用北京同步辐射装置–3W1B束线及反射率计靶室,在束流40—80mA、贮存环电子能量2.2GeV专用光运行模式下,在150—1500eV能区的四个能段,做了铝阴极X射线二极管、滤光片及掠入射平面反射镜能量响应标定实验.通过实验数据比对及分析,最终给出X射线二极管在不同能量段最大可能的测量误差范围.     

X射线探测器的脉冲标定技术

利用强流电子束技术产生通量密度为10¹⁸—10¹⁹X-ray photon/sr·s的脉冲CuKX射线源,标定PIN型硅二极管半导体探测器对X光子的脉冲灵敏度。用绝对X射线监测器——P10气体脉冲电离室作为脉冲X射线通量密度的标准。脉冲电荷自动测量仪由微处理机进行程序控制,并予以实时校准。该电离室测量通量密度的精度为±5％,适用的能通量率范围可达4×10^-9—2×10²W/cm²,适用的光子能量范围为1.5—10keV,标定探测器的精度为±7.0％,并发现PIN型硅二极管的脉冲灵敏度比稳态X射线束标定的灵敏度高30％左右。 关键词：     

软X光能谱仪探测元件晌应曲线标定

报道了软X光能诺仪探别元件的能量响应曲线标定工作．实验利用北京同步辐射装置-3W1B束经及反射率计靶室，在束流40—80mA、贮存环电子能量2.2GeV专用光运行模式下，在150—1500eV能区的四个能段，做了铝阴极X射线二权管、滤光片及擦入射平面反射镜能量响应标定实验，通过实验数据比对及分析，最终给出X射线二极管在不同能量段最大可能的测量误差范围。     

三倍频激光等离子体X射线转换研究

利用“星光Ⅱ”高功率激光装置三倍频激光（波长０.３５μｍ,能量５—９０Ｊ,焦斑直径约２００μｍ,脉冲宽度４００—８００ｐｓ）辐照多种材料（Ｃ,Ａｌ,Ｃｕ,Ａｕ）靶,对于不同激光功率密度,研究软Ｘ射线转换和发射能谱．结合０.３５μｍ激光辐照Ａｌ靶的质量烧蚀率和等离子体喷射速度与激光功率密度的定标关系进行数值模拟,对于激光功率在１０^１３—１０^１５Ｗ／ｃｍ²理论模拟结果与实验结果符合得很好 关键词：     

喷气式Z箍缩等离子体辐射软X射线能谱的研究

研制了一台五通道ROSS-FILTER-PIN软X射线能谱仪，能谱范围为0.28—1.56keV.它由5个连续能段组成，每个能段的起止边由罗斯滤片对(ROSS-FILTERS)的L或K吸收边确定.罗斯滤片对的厚度通过优化计算得到，为了使每个通道的灵敏区外响应(即所测能段外响应)与通道总响应之比最小，在滤片对的第二滤片上镀上了一定厚度的第一滤片材料；为了缩减滤片表面积以增强低能滤片的抗冲击能力及方便滤片加工，能谱仪采用了小探测面积的PIN探测器(1mm²).借助此能谱仪，测量得到了喷气式Z箍缩(Z-pinch)等离子体辐射软X射线能谱的分布，并研究了软X射线产额随箍缩状况的变化趋势. 关键词： Z箍缩等离子体 罗斯滤片 软X射线能谱     

软X射线辐射加热金盘靶的X射线再发射

用两台时间关联的软X射线能谱仪观测软X射线辐射((2—6)×10¹²W·cm^-2)加热金盘靶的X射线再发射-从再发射X射线的时间能谱可看出能谱被“软”化-根据加热脉冲时间修正烧蚀热波的稳态自相似解,分析X射线再发射的时间演变过程- 关键词：     

激光等离子体软X射线光源光谱强度测量方法

提出了一种新的探测和测量激光等离子体软X射线源光谱强度的方法。该方法使用通道电子倍增器和定标过的硅光电二极管为探测器 ,前者是非标准探测器 ,后者为标准探测器。应用电荷灵敏前置放大器测量探测器产生的电量 ,并以高分辨率的光谱仪为分光元件 ,在已知光栅效率、通道电子倍增器增益、硅光电二极管能量响应的条件下 ,给出了计算激光等离子体软X射线源在某一波长光谱强度的公式     

硫化锰电子结构的软X射线共振非弹性散射研究

利用软X射线共振非弹性散射谱(resonant inelastic soft X-ray scattering, RIXS)对3d过渡金属硫化物中的硫化锰(MnS)电子结构进行了研究.通过分析Mn²⁺的2p⁶3d⁵→2p⁵3d⁶→2p⁶3d⁵二次光子过程，得到了共振非弹性散射谱中的两类非弹性峰，d-d电子跃迁和电荷转移(charge-transfer)跃迁.这两部分跃迁分别共振增强于L边附近及伴随峰附近.基于Hartree-Fock方法的多重态计算分别模拟了原子近似下和立方体O_h对称群下共振非弹性散射谱及吸收谱.计算得MnS实际晶体场10Dq值介于0.80eV—0.85eV之间.对MnS和MnO CT跃迁差异的讨论表明MnS较强的CT跃迁来源于其较窄的能隙宽度. 关键词： 软X射线共振非弹性散射 软X射线吸收谱 d-d跃迁 电荷转移     

天文观察用超软X射线探测器的标定

在北京同步辐射装置3W1B光束线上,对天文观测用超软X射线(0.2keV—3.5keV)正比计数管探测器进行了系统地标定.得到了正比计数管的死时间、计数率坪曲线、能量线性、能量分辨、窗材料透过比曲线;借助于已标定过的光电二极管探测器,测量了正比管探测器的能量响应效率,标定不确定度在10%—18%之间.另外,还对正比管系统在卫星上的六道记录和在实验室里的多道记录进行了对比,两种记录方式符合得很好.     

由X射线成像反推核爆当量的蒙特卡罗模拟

初步探讨利用X射线成像反推核爆当量.建立特征环小孔几何模型,采用MCNP4C进行模拟,从模拟源面积,E_c的选取,环宽、等效温度及X射线入射角度的影响等方面对蒙特卡罗模拟进行讨论.在模拟时宜选取源面积S₀=6.25π cm²、能量截断值E_c=2×10^-8 MeV,需考虑能量响应和角度响应.对等效温度为1.4 keV和3.8 keV、X射线入射角度为0°,1°,2°,3°,4°,5°,6°的特征环小孔模型分别进行模拟,给出根据这些模拟结果反推核爆当量的具体方法.     

Detection of Fe 3d electronic states in valence band and magnetic properties of Fe-doped ZnO film

Fe-doped ZnO film has been grown by laser molecular beam epitaxy (L-MBE) and structurally characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), all of which reveal the high quality of the film. No secondary phase was detected. Resonant photoemission spectroscopy (RPES) with photon energies around the Fe 2p-3d absorption edge is performed to detect the electronic structure in the valence band. A strong resonant effect at a photon energy of 710 eV is observed. Fe³⁺ is the only valence state of Fe ions in the film and the Fe 3d electronic states are concentrated at binding energies of about 3.8 eV and 7 eV～ 8 eV. There are no electronic states related to Fe near the Fermi level. Magnetic measurements reveal a typical superparamagnetic property at room temperature. The absence of electronic states related to Fe near the Fermi level and the high quality of the film, with few defects, provide little support to ferromagnetism.     

Crystallographic and optical properties of rare-earth chromium sulfides RCrS3

Rare earch chromium sulfides RCrS₃; R=Y, Gd, Dy, Ho and Er have been synthesized by high temperature reaction of the respective oxides, RCrO₃, with CS₂. Single crystals have been grown by mineralization of the polycrystalline powders using halogen as a mineralizer. The crystal structures were determined from X-ray rotation and Weissenberg photographs. RCrS₃, with R=Y, Gd, Ho and Er, were found to have an isostructural monoclinic structure, while DyCrS₃ was found to have an orthorhombic structure, closely related to the monoclinic compounds. The optical absorption of these compounds, as well as of LaCrS₃ whose structure was previously reported, was measured over the photon energy range 0·15～1·7 eV. For all the compounds, a sharp absorption edge was found at 1·20～1·30 eV at room temperature.This absorption edge shifts toward higher energy upon cooling from room temperature. The infrared absorption of DyCrS₃, HoCrS₃ and ErCrS₃ was negligible, while that of YCrS₃, LaCrS₃ and GdCrS₃ increased markedly, with decreasing photon energy.     

Signatures of the Unruh effect via high-power, short-pulse lasers

The ultra-high fields of high-power short-pulse lasers are expected to contribute to understanding fundamental properties of the quantum vacuum and quantum theory in very strong fields. For example, the neutral QED vacuum breaks down at the Schwinger field strength of 1.3×10¹⁸ V/m, where a virtual e⁺e^- pair gains its rest mass energy over a Compton wavelength and materializes as a real pair. At such an ultra-high field strength, an electron experiences an acceleration of a_S=2×10²⁸g and hence fundamental phenomena such as the long predicted Unruh effect start to play a role. The Unruh effect implies that the accelerated electron experiences the vacuum as a thermal bath with the Unruh temperature. In its accelerated frame the electron scatters photons off the thermal bath, corresponding to the emission of an entangled pair of photons in the laboratory frame. While it remains an experimental challenge to reach the critical Schwinger field strength within the immediate future even in view of the enormous thrust in high-power laser developments in recent years, the near-future laser technology may allow to probe the signatures of the Unruh effect mentioned above. Using a laser-accelerated electron beam (γ～300) and a counter-propagating laser beam acting as optical undulator should allow to create entangled Unruh photon pairs (i.e., signatures of the Unruh effect) with energies of the order of several hundred keV. An even substantially improved experimental scenario can be realized by using a brilliant 20 keV photon beam as X-ray undulator together with a low-energy (γ≈2) electron beam. In this case the separation of the Unruh photon pairs from background originating from linearly accelerated electrons (classical Larmor radiation) is significantly improved. Detection of the Unruh photons may be envisaged by Compton polarimetry in a 2D-segmented position-sensitive germanium detector.     

Experimental calculations of number,energy and dose albedos for various materials using 662 keV gamma rays

ABSTRACT

Number, energy and dose albedos are measured at a scattering angle of 180° for a broad beam of 662 keV gamma rays obtained from a radioactive source of ¹³⁷Cs (having strength in µCi; 1 Ci?=?3.7?×?10¹⁰ disintegrations per second). The gamma beam is incident on semi-infinite thick targets of variable atomic numbers. The scattering media is divided into three sets, which are pure elements, alloys and composite materials. Experiments are carried out using a 3^″?×?3^″ NaI(Tl) scintillation detector. To obtain precision in data, the response unfolding of a scintillation detector is used, which converts the observed pulse-height distribution to a true photon spectrum over the energy range of 2.5 to 640 keV. The detector response unfolding results in the true intensity of back-scattered gamma flux by shifting the events resulting from partial absorption of photons to the full energy peak of the spectrum. In the present study, albedo factors are studied as a function of target thickness and their atomic number. The experimentally calculated numbers of back-scattered gamma photon are in good agreement with theoretically generated numbers of multiple back-scattered counts by using a Monte Carlo simulation code. The experimental data on energy and intensity of 662 keV gamma photons are used to evaluate the number, energy and dose albedos for different materials under investigation.     

Relation of photonuclear reactions to π-meson photoproduction process

Neutron-proton pair knocking-out by photons from iron (Fe⁵⁶) nuclei is studied by measuring induced gamma activity of Mn⁵⁴ isotope. Experiments are performed in a synchrotron beam at two maximum photon energies, 150 and 650 MeV. It was found that the yield of the reaction under study at the maximum energy of 150 MeV is almost zero, whereas a significant yield of gamma active Mn⁵⁴ nuclei is measured at the energy of 650 MeV. The cross section of the neutron-proton pair production reaction on Fe⁵⁶ at an energy of 650 MeV is estimated as 4 · 10^?27 cm².     

用激光分子束外延在Si衬底上外延生长高质量的TiN薄膜

采用激光分子束外延技术,利用两步法,在Si单晶衬底上成功地外延生长出TiN薄膜材料.原子力显微镜分析结果显示, TiN薄膜材料表面光滑,在10 μm×10 μm范围内,均方根粗糙度为0842nm.霍耳效应测量结果显示,TiN薄膜在室温条件下的电阻率为36×10^-5Ω·cm,迁移率达到5830 cm²/V·S,表明TiN薄膜材料是一种优良的电极材料.X射线θ—2θ扫描结果和很高的迁移率均表明,高质量的TiN薄膜材料被外延在Si衬底 关键词： 激光分子束外延 TiN单晶薄膜 外延生长     

F2-laser patterning of indium tin oxide (ITO) thin film on glass substrate

This paper reports the controlled micromachining of 100 nm thick indium tin oxide (ITO) thin films on glass substrates with a vacuum-ultraviolet 157 nm F₂ laser. Partial to complete film removal was observed over a wide fluence window from 0.49 J/cm² to an optimized single pulse fluence of 4.5 J/cm² for complete film removal. Optical microscopy, atomic force microscopy, and energy dispersive X-ray analysis show little substrate or collateral damage by the laser pulse which conserved the stoichiometry, optical transparency and electrical conductivity of ITO coating adjacent to the trenches. At higher fluence, a parallel micron sized channel can be etched in the glass substrate. The high photon energy and top-hat beam homogenized optical system of the F₂ laser opens new means for direct structuring of electrodes and microchannels in biological microfluidic systems or in optoelectronics. PACS 79.20.Ds; 42.62.Cf; 42.55.Lc