电子能量损失谱探测银纳米棒与介质层强耦合的数值模拟

表面等离激元与量子发射体间的强耦合现象通常通过散射、吸收以及荧光等远场光谱探测方法进行研究.利用高度聚焦的电子束,电子能量损失谱能够实现亚纳米尺度的局域探测,可以更加有效地研究强耦合现象.本文在理论上分别模拟了银纳米棒、介质材料以及介质层包裹银纳米棒复合结构的电子能量损失谱.得到了可以与实验结果比拟的银纳米棒表面等离激元的电子能量损失谱.在上述复合结构的电子能量损失谱中观察到了谱峰的拉比劈裂,探究了银纳米棒尺寸对拉比劈裂的影响.分别在红外、可见光波段讨论了介质层的元激发与银纳米棒偶极辐射及高阶非辐射表面等离激元模式间的强耦合现象,从损失谱的空间分布成像角度探讨了强耦合引起的杂化等离激子(plexciton)的形成.本研究对强耦合现象的进一步实验和理论研究具有指导意义.     

用角分辨光电子能谱研究Co/Cu(111)外延超薄膜的电子结构

利用同步辐射角分辨光电子能谱研究了分子束外延生长的Co/Cu(111)超薄膜电子结构的变化.Cu(111)的位于表面布里渊区Γ点的表面态在覆盖度为两单层时仍然可以分辨,说明薄膜生长模式不是二维层状生长.在一单层和二单层时,动量沿Cu体布里渊区ΓΛL方向变化,Co的最明显的峰包有能量色散.在覆盖度从一单层到两单层的变化过程中,固定光子能量测谱发现Co的能带的能量调整.实验测得的Co膜的电子结构与已有理论计算的结果对比,初步确定Co原子在生长初期阶段为两层岛生长,而且在一单层时已经具有铁磁性.     

MoS_2电子屏蔽长度和等离激元

通过有效哈密顿量求解了单层MoS_2低能量区的电子薛定谔方程,分析得出电子能量本征值以及波函数、电子态密度以及电子间的屏蔽长度.发现电子能带分裂成两支导带和两支价带,并且其能带是准线性的.MoS_2的电子间的屏蔽长度非常大,高达10~8cm~(-1).利用费曼图形自洽方法,在无规相近似的基础上研究了单层二硫化钼电子系统的多体相互作用产生的等离激元.研究发现二硫化钼系统由于自旋的劈裂使得导带中存在两支自旋频率不同的等离激元,该元激发的特征与单层石墨烯和传统二维电子气的等离激元对波矢q的依赖关系是一样的,激发频率都正比于q~(1/2),并且随着电子浓度的增加激发频率增大.由于其准线性的能量色散关系,该系统等离激元的频率与电子浓度的变化关系非常不同于石墨烯和二维电子气的关系.自旋-轨道耦合对单层二硫化钼的能带结构和电子性质有重要的影响.研究发现,通过调控二硫化钼系统的电子浓度可以有效地调节该系统两支等离激元的频率.研究结果对理解二硫化钼的电子结构和性质,以及开发二硫化钼为基础的等离子器件有重要的研究和参考价值.     

Mn/GaAs(100)界面电子结构的同步辐射光电子能谱研究

利用同步辐射光电子能谱,研究了室温下在GaAs(100)表面上淀积的Mn的超薄膜的电子结构.实验发现,在θ<2ML的覆盖度下,Mn3d电子的能量态密度分布与体金属α-Mn差别很大当θ>2ML之后,便逐步接近α-Mn的体电子结构.这一结果可由Mn3d电子的自旋向上带和自旋向下带的交换分裂很好地解释.由此推断,当覆盖度θ<2ML时,在GaAs(100)表面上淀积的Mn的超薄膜具有磁有序结构 关键词：     

典型金属纳米结构的电子能量损失谱研究

利用格林函数推导出金属纳米结构电子能量损失谱的计算公式,基于时域有限差分方法对几种典型的结构进行建模仿真,数值模拟运动电荷和结构的距离、液晶环境材料对电子能量损失谱的调节作用.仿真结果表明:当增加电子与纳米结构的距离时,电子能量损失谱谱峰降低;当添加液晶材料或各向同性衬底材料时,电子能量损失谱的峰值发生明显红移,但液晶的光轴倾角改变对峰值的调制作用有限.通过计算电子能量损失谱研究金属纳米结构表面等离子激元共振特性,为高度复杂的等离子体激元纳米结构的设计提供了理论基础.     

慢正电子的应用

表面分析慢正电子近年来大量应用于表面分析,尤其研究接近表面几十到几千埃层内结构状态。当慢正电子入射到金属,受到声子和等离激元(Plasmon)散射很快损失能量,其中一些慢正电子同金属晶体中的电子发生湮没,大部分慢正电子扩散到表面不断热化,接近表面遇到表面偶极层.     

Ag(110)表面吸附酞菁铜分子的紫外光电子谱研究

用紫外光电子能谱(UPS)研究了酞菁铜分子在Ag(110)单晶表面上的吸附，随着酞菁铜分子覆盖度增加，衬底Ag的3d电子信号逐渐减弱，在此能带区域出现两个新的谱峰，这两个与吸附有机分子轨道有关的谱峰的束缚能分别为4.45 和6.36 eV.随着覆盖度的增加，在结合能为1.51和9.20 eV处又出现了两个谱峰，它们同样来自吸附有机分子的轨道.随着覆盖度的继续增加，上述四个谱峰的强度逐渐增加，其能量位置均发生了明显的偏移.根据角分辨光电子能谱的实验结果，酞菁铜分子的分子平面基本与衬底表面平行.密度泛函理论计     

Ag(110)表面吸附酞菁铜分子的紫外光电子谱研究

用紫外光电子能谱(UPS)研究了酞菁铜分子在Ag(110)单晶表面上的吸附,随着酞菁铜分子覆盖度增加,衬底Ag的3d电子信号逐渐减弱,在此能带区域出现两个新的谱峰,这两个与吸附有机分子轨道有关的谱峰的束缚能分别为4.45 和6.36 eV.随着覆盖度的增加,在结合能为1.51和9.20 eV处又出现了两个谱峰,它们同样来自吸附有机分子的轨道.随着覆盖度的继续增加,上述四个谱峰的强度逐渐增加,其能量位置均发生了明显的偏移.根据角分辨光电子能谱的实验结果,酞菁铜分子的分子平面基本与衬底表面平行.密度泛函理论计 关键词： 酞菁铜 紫外光电子谱 吸附电子态 密度泛函理论     

Au表面等离子体激元激发的扫描探针电子能谱

结合扫描隧道显微镜（STM）与电子能谱仪是实现表面微区元素分析的途径之一．我们将环形电子能量分析器和三维扫描探针系统相结合,建立了一台扫描探针电子能谱仪(SPEES)．通过测量针尖近场发射束流激发的Au表面能量损失谱,我们用研究了Au原子的等离子体激元激发现象．进一步通过改变针尖－样品距离,我们研究了Au等离子体激元峰与弹性散射峰的强度比随针尖－样品距离变化的关系．研究结果发现该强度比与针尖－样品距离的关系并不是单调变化,而是在一个特定位置存在极大．     

GdBa_2Cu_3O_(7-δ)超导薄膜的高分辨电子能量损失谱研究

本文用高分辨电子能量损失谱对 c-取向的 GdBa_2Cu_3O_(7-δ)超导和不超导薄膜样品进行了分析,发现与不超导样品相比,超导样品在约55meV 处存在增强的能量损失峰.这个损失峰来源于超导体内部电荷振荡激元与 Cu(1)-O(4)光学声子的相互作用,它证实了 Varma和 Tachiki 的理论,表明超导体内部电荷振荡激元的存在对超导电性有重要作用.     

The growth mode of aluminium on silver (111)

The geometric and electronic structures occuring during the growth of Al on a single crystal Ag(111) surface have been studied using a combination of low energy electron diffraction (LEED), Auger electron spectroscopy (AES), energy loss spectroscopy (ELS) and work function measurements. The Auger signal versus deposition time plots, which were used to monitor the growth mode, are shown to behave in an identical fashion to that expected for layer-by-layer (Frank-van der Merwe) growth. LEED was used to determine the lateral periodicity of thin Al films and shows that Al forms, at very small coverages, 2D islands which have the same structure as the Ag(111) substrate and which grow together to form the first monolayer. At substrate temperatures of 150 K a well defined (1 × 1) structure with the same orientation as the underlying Ag(111) can be seen up to at least 12 ML. After completion of the third monolayer the ELS spectrum approached that observed for bulk aluminium. At a coverage of 3 ML the work function decreases by 0.4 eV from the clean silver value.     

用可调探深的电子能量损失谱研究Sn/Si界面

用可调探测深度的电子能量损失谱辅以俄歇电子能谱和低能电子衍射,研究Sn/Si系统的界面反应。结果表明:当Sn蒸镀量大于两个原子单层,退火温度由400℃到700℃,在Sn/Si(111)界面Sn与Si发生互混,形成几个原子层厚的Sn/Si互混层,该互混层的特征体峰在15.5eV。在相同温度范围退火,Sn/Si(001)界面无可察觉的互混,仍有Sn岛存在,长时间在550℃退火低能电子衍射图形上出现(113)小晶面的衍射斑。 关键词：     

Growth and alloy formation of ultrathin Ni films on Co/Pt(1 1 1)

Low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES) were used to study the growth and the structural evolution of Ni/Co/Pt(1 1 1) following high-temperature annealing. From the oscillation of the specular beam of the LEED and Auger uptake curve, we concluded that the growth mode of thin Ni films on 1 ML Co/Pt(1 1 1) is at least 2 ML layer-by-layer growth before three-dimensional island growth begins. The alloy formation of Ni/1 ML Co/Pt(1 1 1) was analyzed by AES. The temperature for the intermixing of Ni and Co layers in the upper interface without diffusing into the bulk of Pt is independent of the thickness of Ni when a Co buffer is one atomic monolayer. After the temperature was increased, formations of Ni-Co-Pt alloy, Ni-Pt alloy and Co-Pt alloy were observed. The temperature required for the Ni-Co intermixing layer to diffuse into Pt bulk increases with the thickness of Ni. The interlayer distance as a function of annealing temperature for 1 ML Ni/1 ML Co/Pt(1 1 1) was calculated from the I-V LEED. The evolution of LEED patterns was also observed at different annealing temperatures.     

SURFACE PLASMON OF Ag CLUSTERS ON ALUMINA FILMS

The deposition of silver on an ordered alumina film prepared on Re(0001) surface has been studied by Auger electron spectroscopy (AES), low energy electron diffraction (LEED) and high resolution electron energy loss spectroscopy (HREELS). The results show that Ag grows initially as clusters at 90K and 300K. A red shift of the Ag surface plasmon as a function of decreasing coverage is observed, which is related to the cluster size effect. A surface plasmon characteristic of metallic Ag appears at coverages higher than 2.8 monolayer equivalent.     

Electron energy loss spectroscopic investigation of palladium metal and palladium(II) oxide

Electron energy loss spectra (ELS) obtained from polycrystalline Pd metal and PdO powder using primary electron energies ranging from 100 to 1150 eV have been obtained and examined in an attempt to gain a better understanding of the origins of the loss features and to assess the utility of ELS in investigations of Pd catalysts. The two sets of ELS spectra differ significantly. The ELS spectra from Pd metal exhibit a predominant peak at 6.5 eV, shown to arise from a surface plasmon excitation, and two broad features at 25.1 and 31.9 eV, which originate from bulk loss processes. The broad features consist of several overlapping losses due mainly to interband transitions from the d-band, though a bulk plasmon excitation is believed to produce a feature near 24 eV. Two distinct peaks are present at 3.7 and 7.6 eV in the ELS spectra obtained from PdO, while a broad region of intensity appears over the range from 20 to 40 eV. The peak at 3.7 eV is attributed to a transition between the top of the valence band and the bottom of the conduction band. The feature at 7.6 eV is broad and arises from several overlapping features that are most likely caused by interband transitions rather than collective excitations. Furthermore, the ELS spectra obtained from PdO and oxidized Pd are also quite different indicating that ELS can provide useful information for determining the bonding states of oxygen on Pd-containing catalysts.     

Electron spectroscopic studies of tin surface segregation on iron single crystal surfaces

AES, ELS, LEED and XPS investigations of the surface segregation of tin dissolved in a Fe-4wt%Sn alloy were performed in ultra-high vacuum at elevated temperatures. The three low indexed surface orientations (100), (110) and (111) were studied. In all cases, no dependence of the maximum tin surface coverage on temperature was detected within the temperature range from 450 to 650°C. An order-disorder transition was observed by LEED, AES and XPS for the (100) oriented surface during tin segregation. The binding state for the segregated tin atoms abruptly changes at the order-disorder transition as determined by XPS. Similar results were obtained for the (111) surface. A deviating behaviour was observed for the (110) surface orientation, where two different ordered hexagonal surface structures were detected by LEED during tin surface enrichment. The first structure is similar to the diamond structure of pure tin, and the second one corresponds to the formation of a thin layer of the intermetallic compound FeSn on the (110) surface. The electron binding energies of the segregated tin atoms determined by XPS increase with increasing tin coverage on the (110) oriented surface. ELS studies on (100) and (111) oriented surfaces saturated with segregated tin show in comparison with literature data of pure tin a surface plasmon loss peak but no signal for the corresponding bulk loss. An energy loss signal found only for the (110) surface at Sn saturation coverage seems to be characteristic of an intermetallic FeSn surface phase.     

Electronic properties of cleaved Si(111) upon room-temperature deposition of Au

Low energy electron diffraction (LEED), Auger electron spectroscopy (AES), and photoemission yield spectroscopy (PYS) measurements are performed on a set of 2 × 1 reconstructed silicon (111) surfaces with different bulk dopings as a function of gold coverage θ, from zero to a few hundred monolayers, obtained by UHV evaporation on a sample kept at room temperature. Our measurements show the formation of an Au-Si alloy with the first two monolayers of gold deposit which induces a decrease of the ionization energy Φ by about 0.15 eV while no variation of the work function is observed. In the effective density of states, the double structure related to the 2 × 1 reconstruction is then replaced by a single peak at ? 0.4 eV below the valence band edge. At larger coverages, the Au-Si alloy remains on top of a gold layer which forms an abrupt interface with the Si substrate.     

Growth and electronic structure of Mn on Al(1 1 1)

Growth and electronic structure of a 3d transition metal Mn on a free-electron-like metal Al(1 1 1) have been studied by photoelectron spectroscopy and low energy electron diffraction (LEED). A LEED is observed at 6 ML Mn coverage, that is related to the α phase of bulk Mn. From the intensity of the adlayer and substrate core-level peaks and angle dependent studies, evidence of primarily layer by layer growth is observed. The Mn 2p core-level for 0.1 ML Mn coverage appears at 0.3 eV lower binding energy with respect to bulk Mn. With increasing Mn coverage, the Mn 2p binding energy increases. An extra component is observed at the lower binding energy side of the Al 2p spectra, that is related to interface alloying. The asymmetric line-shape of bulk-like Mn becomes symmetric for lower Mn coverages.     

Mn/PbTe(111)界面行为的光电子能谱研究

利用X光电子能谱(XPS)对Mn在PbTe(111)表面上沉积生长的界面性质进行了研究.研究表明Mn的沉积使衬底发生了原子尺度上的突变及金属/半导体界面的形成.从X光电子能谱的芯态能级峰来看,随着Mn膜的沉积Pb 4f峰的低结合能端出现了金属Pb的特征新峰,而Te 3d峰的高结合能端却出现了MnTe特征新峰.且随着Mn膜厚度的增加这些新峰变得越来越明显,当Mn膜厚度超过7 ML(monolayer)(即超过Pb,Te的探测深度)时,衬底信号峰完全消失,只剩下金属Pb和MnTe的芯态能级峰.Mn膜厚度继续增 关键词： PbTe半导体 界面形成 光电子能谱 偏析     

Growth and oxidation of aluminum thin films deposited on Ag(1 1 1)

Auger electron spectroscopy (AES) and low energy electron diffraction (LEED) were used to study the first steps of growth and oxidation of aluminum on Ag(1 1 1) substrate. We find that the growth of aluminum at room temperature (RT) shows the formation of a complete monolayer (ML) in epitaxy with the substrate. After deposition at RT of one aluminum ML, the dissolution kinetics is recorded at 200 °C and the bulk diffusion coefficient is deduced. We also show that the oxidation at RT of one aluminum ML is very rapid, and that both aluminum and oxygen do not dissolve in silver up to 500 °C. From the AES intensities variations, we deduce the composition profile of the oxide layer which corresponds probably to the stacking …/Ag/Ag/Al/O.