Scanning tunnelling microscope studies of growth of RuO2（110） thin layer on Ru（0001）

This paper reports that the growth of RuO_x(110) thin layer growth on Ru(0001) has been investigated by means of scanning tunnelling microscope (STM). The STM images showed a domain structure with three rotational domains of RuO_x(110) rotated by an angle of 120℃. The as-grown RuO_x(110) thin layer is expanded from the bulk-truncated RuO_x(110) due to the large mismatch between RuO_x(110) and the Ru(0001) substrate. The results also indicate that growth of RuO_x(110) thin layer on the Ru(0001) substrate by oxidation tends first to formation of the Ru-O (oxygen) chains in the [001] direction of RuO_x(110).     

Mn overlayers on PbTe（111）： Substitutional adsorption and interface formation

The formation of the Mn/Pb Te（111） interface is investigated by photoemission spectrum. The core level behavior of Mn 2p is consistent with Mn substitutional adsorption during the initial Mn deposition, forming a（√3 ×√3）R30？-Pb0.67Mn0.33 Te phase of the second layer. Further deposition of Mn can cause metallic Mn islands to cover the substitutional substrate. Ultraviolet photoemission measurements show that the Fermi level is shifted into the conduction band, indicating Ohmic contact formation at the Mn/Pb Te（111） interface. The valence band maximum associated with the Pb0.67Mn0.33 Te layer is located at 1.27 e V below the Fermi level, and a schematic electronic structure of the Mn/Pb Te（111）interface is given. The work function of the substituted substrate with Pb-covered Mn islands is determined to be 4.16 e V,in comparison with 4.35 e V for the Pb-covered substituted substrate and 3.95 e V for the pristine Pb Te（111） surface.     

三萘基膦在Ag(110)面上沉积的紫外光电子能谱研究

利用紫外光电子能谱（UPS）对新型有机半导体三萘基膦（TNP）在金属Ag(110)表面上沉积生长及其电子性质等进行了研究.三萘基膦的价带谱峰分别位于费米能级以下38，63，93和110 eV处，其中，价带顶 (HOS)位于费米能级以下约25 eV处.清洁Ag(110)表面的功函数为43 eV.随着三萘基膦在Ag(110)表面的沉积，功函数减小到38 eV，并达到饱和.根据UPS的测量结果，给出了三萘基膦/Ag(110)界面的能带结构，且三萘基膦与衬底Ag之间呈弱相互作用行为. 关键词： 紫外光电子谱 价电子结构 功函数     

Mn/PbTe(111)界面行为的光电子能谱研究

利用X光电子能谱(XPS)对Mn在PbTe(111)表面上沉积生长的界面性质进行了研究.研究表明Mn的沉积使衬底发生了原子尺度上的突变及金属/半导体界面的形成.从X光电子能谱的芯态能级峰来看,随着Mn膜的沉积Pb 4f峰的低结合能端出现了金属Pb的特征新峰,而Te 3d峰的高结合能端却出现了MnTe特征新峰.且随着Mn膜厚度的增加这些新峰变得越来越明显,当Mn膜厚度超过7 ML(monolayer)(即超过Pb,Te的探测深度)时,衬底信号峰完全消失,只剩下金属Pb和MnTe的芯态能级峰.Mn膜厚度继续增 关键词： PbTe半导体 界面形成 光电子能谱 偏析     

Ferroelectricity and Large Rashba Splitting in Two-Dimensional Tellurium

Two-dimensional(2D) ferroelectric(FE) systems are promising candidates for non-volatile nanodevices.Previous studies mainly focused on 2D compounds.Though counter-intuitive,here we propose several new phases of tellurium with(anti)ferroelectricity.Two-dimensional films can be viewed as a collection of one-dimensional chains,and lone-pair instability is responsible for the(anti)ferroelectricity.The total polarization is determined to be 0.34×10^-10C/m for the FE ground state.Due to the ...