阶梯型纳米孔径的近场光学局域增强特性研究

提出一种高分辨力与高通光效率兼备的阶梯型纳米孔径设计方法 ,孔径的尺寸从膜层的入射表面向出射表面呈阶梯型逐渐减小 ,直到在膜层的出射表面形成一个亚波长的小孔。采用三维时域有限差分 (FDTD)方法对方形阶梯型纳米孔径及三角形阶梯型纳米孔径进行了数值模拟计算。结果表明 ,由于近场光学很强的局域场增强效应 ,其通光效率与输出光强极大值在具有相同近场光斑尺寸情况下 ,较普通的非阶梯型纳米孔径提高了两个数量级 ,甚至更高 ,有效地提高了输出光功率。采用四台阶三角形阶梯型纳米孔径 ,当光斑半峰全宽为 97nm× 74nm时 ,出射光强极大值达到 10 4 9.76 ,较入射光增强了 10 0 0倍 ,而通光效率大于 1,达到 1.6 7。这种阶梯型纳米孔径可以直接作为纳米孔径激光器的出射孔径提高其输出光功率 ,也可以作为独立的光学屏对入射光进行整形得到具有高输出功率的亚波长尺度光源 ,在纳米尺度光学成像、光谱探测、数据存储、光刻、光学操作等近场光学应用领域具有潜在的应用前景。     

微小孔径激光器的研制与近场测试

介绍了一种用于高密度近场存储领域的新型微小孔径激光器(VSAL)。为了解决由腔面金属膜造成的激光器PN结短路的问题,在激光器中引入了窗口隔离区,不仅降低了器件制备的难度,而且也提高了器件的性能和成品率。采用聚焦离子束刻蚀技术成功地制备了输出功率为0 3mW的激光器,利用矩阵方法通过远场测量值估算了激光器的近场分布。     

微小孔径激光器的工艺及器件功率和寿命特性分析

在650nm波长半导体激光器的基础上制造出了高输出功率的微小孔径激光器.驱动电流为25mA时， 输出功率达到0.4mW，最大功率可达１mW以上.叙述了微小孔径激光器的特殊的制造工艺，并分析了器件可能的失效机理. 关键词： 近场光学 微小孔径激光器 半导体激光器 失效分析     

基于纳米孔径激光器的近场光存储的最新发展

近几年发展起来的近场光学原理和方法为实现超高密度光学数据存储开辟了新的技术途径。基于近扬光学方法的最小信息记录单元尺寸突破了经典光学分辨率的衍射极限 ,理论存储密度高达 1 0 0 0Gb/平方英寸 ,受到了研究人员和工业界的广泛关注。着重介绍了用于近场光学存储的纳米孔径激光器的原理、结构、优点 ,对它的实现方法和发展状况作了详细的阐述 ,并对其在近场光存储领域未来的发展趋势进行了展望     

CW COIL输出功率与输出孔径及

氧碘化学激光器由于复杂的动力学因素,激光介质的增益分布通常是不均匀的,这就使得激光输出功率并不完全随着激光输出孔径成线性增加,也由于这种增益分布的不均匀性,即使在激光输出孔径不变的情况下,激光输出功率也会随着光轴位置的改变而发生变化.为此,在激光器工作参数固定条件下,通1过实验描述了激光输出功率与激光输出孔径及光轴位置之间存在着的一定的依赖关系.     

CW COIL输出功率与输出孔径及

氧碘化学激光器由于复杂的动力学因素,激光介质的增益分布通常是不均匀的,这就使得激光输出功率并不完全随着激光输出孔径成线性增加,也由于这种增益分布的不均匀性,即使在激光输出孔径不变的情况下,激光输出功率也会随着光轴位置的改变而发生变化.为此,在激光器工作参数固定条件下,通1过实验描述了激光输出功率与激光输出孔径及光轴位置之间存在着的一定的依赖关系.     

CW-COIL输出功率与输出孔径及光轴位置之间的依赖关系

 氧碘化学激光器由于复杂的动力学因素,激光介质的增益分布通常是不均匀的,这就使得激光输出功率并不完全随着激光输出孔径成线性增加,也由于这种增益分布的不均匀性,即使在激光输出孔径不变的情况下,激光输出功率也会随着光轴位置的改变而发生变化。为此,在激光器工作参数固定条件下,通过实验描述了激光输出功率与激光输出孔径及光轴位置之间存在着的一定的依赖关系。     

微小孔径激光器的光谱特性综述

微小孔径激光器(Very-small-aperture laser,VSAL)是近年发展起来的新型有源纳米激光光源。出射光端面的孔径形状是决定其性能的重要因素之一。多种异形孔径被先后提出并证明能极大地提高VSAL的出射效率。相关研究结果表明,常规孔径形状的通光效率随入射波长的增大急剧下降,但异形孔径的通光效率会出现一个谐振峰,在谐振峰位置通光效率得到了显著的提高。通过改变孔径形状参数或增加表面纳米形貌结构,可以调整纳米孔径本身的谐振波长峰值,改善VSAL的性能。综述了纳米孔径的光谱特性以及利用这种特性优化VSAL的性能,并对未来的研究前景做了适当的展望。     

808nm大孔径垂直腔面发射激光器研究

垂直腔面发射激光器(VCSEL)中的载流子聚集效应使注入到有源区的工作电流只是通过边缘环形区域很窄的通道,激光功率密度分布不均匀;尤其当器件尺寸较大时,激射光斑呈现环状,环中间光强很弱.这是研制电抽运高功率大尺寸VCSEL尤为突出的技术难题.采用新型结构成功研制出808 nm波段高功率大孔径VCSEL,在注入电流为1A时,室温下连续输出功率达0.3 W. 关键词： 半导体激光器 垂直腔面发射激光器 高功率 大孔径     

近场扫描干涉无孔径显微术

本文介绍了国外研究的一种新型近场扫描无孔径干涉显微镜的原理及结构。这种显微镜的分辨率可达到１ｎｍ，开辟了在亚纳米尺度成像和进行光谱分析的可能性，特别是在化学和生物学研究领域具有潜在的应用前景。     

A review of progress on nano-aperture VCSELInvited Paper

This paper reviews the progress on nano-aperture vertical-cavity surface-emitting lasers (VCSELs). The design, fabrication, and polarization control of nano-aperture VCSELs are reviewed. With the nanoaperture evolving from conventional circular and square aperture to unique C-shaped, H-shaped, I-shaped, and bowtie-shaped aperture, both the near-field intensity and near-field beam confinement from nanoaperture VCSELs are significantly improved. As a high-intensity compact light source with sub-100-nm spot size, nano-aperture VCSELs are promising to realize many new near-field optical systems and applications.     

表面等离子体调制的纳米孔径垂直腔面发射激光器

在普通850nm垂直腔面发射激光器基础上制备了表面等离子体调制的纳米孔径垂直腔面发射激光器.当小孔直径为200nm，周围光栅的周期为400nm时，在15mA驱动电流下最大输出光功率达到了0.3mW.介绍了该器件的制备工艺，并从实验和理论两方面分析了周期性光栅结构对光束的约束作用.     

High-intensity bowtie-shaped nano-aperture vertical-cavity surface-emitting laser for near-field optics

We report a high-intensity nano-aperture vertical-cavity surface-emitting laser (VCSEL) utilizing a bowtie-shaped aperture. A maximum power of 188 microW is achieved from a 180 nm bowtie aperture at a wavelength of 970 nm. The near-field full width at half-maximum intensity spot size 20 nm away from the bowtie aperture is 64 nm x 66 nm from simulation, and the peak near-field intensity is estimated to be as high as 47 mW/microm(2). This intensity is high enough to realize near-field optical recording, and the small spot size corresponds to storage densities up to 150 Gbits/in(2). The bowtie-aperture VCSEL also enables other applications, such as compact high-intensity probes for ultrahigh-resolution near-field imaging and single molecule fluorescence and spectroscopy.     

Large spot size and low-divergence angle operation of 917-nm edge-emitting semiconductor laser with an asymmetric waveguide structure

GaInAs/AlGaAs comprehensive-strained three-quantum-well lasers with asymmetric waveguide are designed and optimized. With this design, the optical field in the transverse direction is extended, and a semiconductor laser with large spot is obtained. For a 300-μm cavity length and 100-μm aperture device under continuous wave (CW) operation, the measured vertical and horizontal far-field divergence angles are 12.2° and 3.0°, respectively. The slope efficiency is 0.44 W/A and the lasing wavelength is 917 nm.The equivalent transverse spot size is 3 μm for the fundamental transverse mode, which is a sufficiently large value for the purpose of coupling and manipulation of light.     

Numerical Analysis of Nano-Aperture Light Source for High-Density Optical Data Storage

Two unconventional nano-aperture light sources, an L-shaped nano-aperture source and a 3D nano-aperture source for high-density optical data storage, are numerically investigated. With incidence of a Gaussian beam, the spot size of the Poynting vector coupled into the recording medium is 130 × 175 nm^2 for the L-aperture and 120 × 135 nm^2 for the 3D nano-aperture. The quantitative analyses indicate that the unconventional nanoaperture sources can provide enough power density to record marks in the commercial recording medium. It is feasible to use a laser diode with a nano-aperture as an active nanometer light source for high-density optical data storage.     

Coupling of large aperture semiconductor lasers by gain profiling

We present results from a theoretical study of two large aperture semiconductor lasers transversely coupled through their gain profiles. We show that we can produce both in- and out-of-phase locking between the lasers and observe a period and bistability in our phase-locking with respect to both design and operating parameters. We discuss the implications of our design for high power laser arrays and compare the performance of our coupled lasers to single devices.     

Optimization procedures for metal-coated NSOM aperture array

Recently, there has been tremendous interest in near-field optical lithographic techniques for gigabyte portable information storage devices. The near-field optical lithographic technique will circumvent the classical diffraction limit and therefore can provide sub-wavelength-size patterns. For a potential near-field optical probe, a novel technique for the nano-fabrication of sub-wavelength-size aperture arrays has been developed based on semiconductor batch fabrication technology. Hollow pyramidal type 50×50 and 25×25 SiO₂ nano-aperture arrays have been fabricated through the following procedures: square-dot array patterning, V-groove formation, thermal oxidation at a concave Si surface, backside Si etching, and nano-aperture opening by SiO₂ etching using HF solution. The average diameter of the fabricated 50×50 nano-size aperture array was measured to be 260 nm and the deviation to be less than 10%. For the purpose of completing a metal-coated array, metal deposition including Ti and Al was carried out. Next, thermal annealing and preliminary laser annealing experiments were performed in order to obtain better surface characteristics such as adhesion and better surface morphology around the metal-coated apertures. PACS 81.65.Cf; 81.65.Mq; 52.77.Bn; 85.40.Hp; 81.15.Ef; 68.35.Fx; 61.80.Ba     

Low-loss subwavelength metal C-aperture waveguide

We present a design of a linear optical waveguide that utilizes a C-shaped metallic nano-aperture that efficiently transports light while maintaining a spot size of lambda/10. The performance of a C-aperture waveguide is superior to both a regular ridge waveguide and other surface plasmon based metal nano-optical waveguides. The energy transport mechanisms are explained by the coupling of an aperture surface resonance and the thickness resonances inside the guide channel. Finite-difference time-domain simulations of gold C-aperture waveguides are performed for a 1.5 microm wavelength incident plane wave. The 1/e decay length in power transmission is predicted to be approximately 2.5 microm. The total power throughput is 1.66 for the 2.55 microm long guide, with an intensity 6 times that of the incident wave at a distance 120 nm from the exit plane, having a spot size of 150 nm.