Large spot size and low-divergence angle operation of 917-nm edge-emitting semiconductor laser with an asymmetric waveguide structure |
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| Authors: | Jianxin Zhang Lei Liu Wei Chen Anjin Liu Wenjun Zhou Wanhua Zheng |
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| Institution: | 1Nano-optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China 2State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | GaInAs/AlGaAs comprehensive-strained three-quantum-well lasers with asymmetric waveguide are designed and optimized.With this design,the optical field in the transverse direction is extended,and a semiconductor laser with large spot is obtained.For a 300-μm cavity length and 100-μm aperture device under continuous wave(CW) operation,the measured vertical and horizontal far-field divergence angles are 12.2? and 3.0?,respectively.The slope efficiency is 0.44 W/A and the lasing wavelength is 917 nm.The equivalent transverse spot size is 3 μm for the fundamental transverse mode,which is a sufficiently large value for the purpose of coupling and manipulation of light. |
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