2.0 μm room temperature CW operation of InGaAsSb/AlGaAsSb laser with asymmetric waveguide structure

The GaInAsSb/AlGaAsSb double quantum well lasers with an emission wavelength 2.0 μm, using the separate-confinement asymmetric waveguide, have been designed and fabricated, showing high quantum efficiency and high power conversion efficiency at continuous-wave operation mode. The threshold current density of the device is as low as 92 A/cm². The internal loss coefficient and the internal quantum efficiency are 1.0 cm^?1 and 86.1%, respectively. The 35% maximum power conversion efficiency (PCE) and narrow far-field patterned were achieved.     

基于GaAs/InAs-GaAs/ZnSe量子点太阳电池结构的优化

基于GaAs/InAs-GaAs/ZnSe的P-i-N量子点太阳电池结构, 根据光学原理和扩散理论建立了光生电流密度与膜层厚度相关的数学模型, 定量分析了量子点层厚度等参数对太阳电池性能的影响,以期达到提高量子 点太阳电池转换效率的目的.理论模拟表明:在i层厚度取3000 nm时,优化后P(GaAs)型、N(ZnSe)型层 薄膜的最佳膜厚为1541 nm, 78 nm, 并在单一波长下太阳电池转换效率为20.1%;同时量子 点体积和温度对于量子点太阳电池I-V特性也会产生影响, 当量子点体积和温度逐渐增大时, 开路电压呈现减小趋势,使得转换效率降低.     

Improved efficiency droop characteristics in an InGaN/GaN light-emitting diode with a novel designed last barrier structure

<正>In this study,the characteristics of nitride-based light-emitting diodes with different last barrier structures are analysed numerically.The energy band diagrams,electrostatic field near the last quantum barrier,carrier concentration in the quantum well,internal quantum efficiency,and light output power are systematically investigated.The simulation results show that the efficiency droop is markedly improved and the output power is greatly enhanced when the conventional GaN last barrier is replaced by an AlGaN barrier with Al composition graded linearly from 0 to 15% in the growth direction.These improvements are attributed to enhanced efficiencies of electron confinement and hole injection caused by the lower polarization effect at the last-barrier/electron blocking layer interface when the graded Al composition last barrier is used.     

非对称结构大功率940nm量子阱激光器

为改善940 nm大功率InGaAs/GaAs半导体激光器输出特性,通过模拟计算了非对称波导层及限制层结构的光场分布,并参照模拟制作了非对称结构半导体激光器器件。采用低压金属有机物气相沉积(LP-MOCVD)生长技术,获得了低内吸收系数的高质量外延材料,通过实验数据计算得到激光器材料内吸收系数仅为0.44mm~(-1)。进而通过管芯工艺制作了条宽100μm、腔长2000μm的940 nm半导体激光器器件。25℃室温10 A直流连续(CW)测试镀膜后器件阈值电流251 mA,斜率效率1.22 W/A,最大输出功率达到9.6 W,最大光电转化效率超过70%。     

Er3+-Yb3+共掺磷酸盐玻璃放大器的大信号增益与量子效率理论分析

研究大信号工作状态下的Er^3 -Yb^3 共掺磷酸盐玻璃波导放大器的增益与量子转换效率。从量子转换效率的定义出发，得出了增益、抽运光功率以及量子转换效率三者之间关系的解析表达式。通过数值求解大信号工作状态下的Er^3 -Yb^3 共掺系统的速率方程与光功率传输方程，讨论了Er^3 浓度、Yb^3 浓度、Yb^3 与Er^3 浓度比率、抽运光功率以及放大器长度等因素对量子转换效率的影响。结果表明提高Er^3 浓度与增加放大器长度均有助于提高量子转换效率，高Er^3 浓度掺杂需要相应的高Yb^3 浓度与之相匹配以减小由于高浓度Er^3 掺杂引起的上转换效应，Yb^3 浓度的提高将降低器件的量子转换效率，Yb^3 -Er^3 浓度之比取1～2较好。     

退火温度对聚对苯乙炔MOPPV-ZnSe量子点复合材料太阳电池性能影响

利用原位缩合法制备了聚(2-甲氧基-5辛氧基)对苯乙炔(MOPPV)-ZnSe量子点复合材料,通过对复合材料的X射线衍射、透射电子显微镜、扫描电子显微镜、紫外可见吸收光谱等研究,发现聚合物MOPPV与ZnSe量子点以包覆形式有效地复合在一起,复合材料中ZnSe量子点结晶性良好,尺寸约为4 nm;且两者之间发生光诱导电荷转移,复合材料随着退火温度的升高,其吸收光谱范围发生红移。通过对MOPPV-ZnSe复合材料光电性能的研究发现,复合材料光电性能随着退火温度的升高逐渐表现出明显的二极管特性,转换效率出现先增大后减小的趋势,且在160℃时转换效率达到最大为0.3726%。     

泵浦光的入射角对参量下转换的影响

利用参量下转换制备相关光子实现对各类探测器的量子效率的定标,是近年来兴起的新型定标技术。由于参量下转换的光子转换效率低,探测器输出信号信噪比小。采用短波激光器泵浦PPLN周期极化性晶体,可获得较大功率的参量光。分析了泵浦光在PPLN晶体端面的入射角对参量光的转换效率、空间分布、参量带宽及晶体周期的影响,并进行了数值模拟。分析发现当泵浦光正入射晶体端面时,参量光功率转换大,带宽小,发散角大;随着泵浦光入射角度逐渐增大,参量下转换的转换效率降低,相关光子的带宽变小,发散角变小且参量光的中心波长的空间位置会发生相对偏移。该研究结果可为相关光子探测、模拟探测器量子效率的高精度定标提供理论依据。     

Efficient and long‐life green light‐emitting diodes comprising tridentate thiol capped quantum dots

In this paper, the green quantum dots capped with the ligand, tris(mercaptomethyl)nonane (TMMN), are fabricated as the light‐emitting layer for efficient and bright light‐emitting diodes. These TMMN‐capped quantum dots exhibit well‐preserved photoluminescence properties with quantum yields of ∼90% after ligand exchange. The light‐emitting diodes based on TMMN‐capped quantum dots are reported with a maximum external quantum efficiency of 16.5% corresponding to a power efficiency and current efficiency of 57.6 lm W^–1 and 70.1 cd A^–1, respectively. The devices exhibit high color stability that is not markedly affected by the increase of applied voltage, thus leading to a high color reproducibility. Most importantly, the devices exhibit high environmental stability. For the highest luminance devices (with emitting layer thickness of 25 nm) and the highest power efficiency devices (with emitting layer thickness of 38 nm), the lifetimes are > 480 000 h and > 110 000 h, respectively.

     

Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes （LEDs）

The reasons for low output power of AlGaInP Light Emitting Diodes (LEDs) have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency (EQE) has serious impaction on the internal quantum efficiency (IQE), because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift.     

High Performance AlGaAs Quantum Well Lasers with Low Beam Divergence Grown by Molecular Beam Epitaxy

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发光区插入超薄LiF层对有机电致发光器件性能的影响

着重对比了在以DCM掺杂Alq₃为发光层的红光器件的发光区插入超薄LiF层后器件性能的改善。插入超薄LiF层后,器件的最大工作电流密度为487 mA/cm²,相应的最大电致发光亮度为76 740 cd/m²,最大外量子效率为5.9%。器件内量子效率为40%,超过了基于有机荧光小分子发光材料的有机电致发光器件的内量子效率的理论极限值25%。对器件内单线态及三线态激子的形成过程进行了分析,并推测:超薄LiF层的插入提高了器件内单线态电荷转移态/三线态电荷转移态的形成比例,进而提高了器件内单线态激子在激子总数中的比例,最终提高了器件的内量子效率。同时,超薄LiF层的插入改变了发光层内局域的内部电场,使器件的外量子效率不仅没有随电流密度的增加而降低,反而非线性增加。     

808nm无铝大功率量子阱激光器

报导了用低压(LP)-MOCVD方法研制出808nm无铝InGaAsP/InGaP/GaAs单量子阱分别限制异质结构大功率激光器(SCHSQW),器件外微分量子效率为65%,阈值电流密度400A/cm2,特征温度120℃,对于100μm条宽、1000μm腔长宽接触激光器,室温连续输出光功率达1瓦以上,并讨论了无铝大功率激光器的阈值、光谱等特性.     

高功率、高效率808nm半导体激光器阵列

通过设计高效率808 nm非对称宽波导外延结构,减少P型波导层和包层的自由载流子光吸收,实现腔内光吸收损耗为0.63 cm~(-1).制备的808 nm半导体激光器阵列在室温25?C下,实现驱动电流135 A,工作电压1.76 V,连续输出功率大于150 W,斜率效率高达1.25 W/A,中心波长809.3 nm,器件最高电光转换效率为65.5%,这是目前国内报道的808 nm半导体激光器阵列的最高电光转换效率,达到国际同类器件最好水平.     

非等温模型下LED芯片性能与衬底的关系

发光二极管(LED)中载流子的输运及复合决定了其非均匀的内热源强度及分布,而芯片温度又影响载流子的输运及复合,两者具有强烈的耦合关系。本文利用非等温多物理场耦合模型对以蓝宝石、Si及SiC为衬底的 LED芯片的内量子效率、光谱特性及光电转换效率进行了系统研究。结果表明:以SiC为衬底的LED芯片具有最小的效率下垂效应(Efficiency droop)及最高的光谱强度和光电转换效率。这是因为与其他两种衬底的LED芯片相比,以SiC为衬底的LED芯片具有最好的散热性能,因此非均匀温度场对其载流子输运及复合的影响最小,使得活性区中的载流子浓度显著增强,漏电流明显下降。     

碳纳米管掺杂对聚合物聚(2-甲氧基-5-辛氧基)对苯乙炔-PbSe量子点复合材料性能的影响

基于碳纳米管的良好导电性、激子传输性能和量子点聚合物复合材料高的光电转换性能, 采用原位缩合法制备了聚合物聚(2-甲氧基-5-辛氧基)-对苯乙炔(MOPPV)功能化碳纳米管(SWNT)-PbSe量子点复合材料, 通过对复合材料的X射线衍射、透射电子显微镜和紫外可见吸收光谱研究, 发现MOPPV, SWNT与PbSe量子点可以有效地复合, 且SWNT与MOPPV形成网状结构; PbSe量子点尺寸为5.75 nm, 其可均匀地分散在MOPPV-SWNT基体中形成包覆或镶嵌结构, 并发生了光诱导电荷转移.通过对复合材料的光电性能研究发现, 当MOPPV, SWNT, PbSe三者的质量比为1: 0.3 : 1 时其光电性能最好, 开路电压为0.556 V, 短路电流为2.133 mA, 填充因子为34.48%, 转换效率为0.452%, 与聚合物MOPPV-PbSe量子点复合材料材料相比, 光电性能提高了2–3倍. 关键词： 量子点 碳纳米管 复合材料 转换效率     

High power efficiency in single layer blue phosphorescent organic light-emitting diodes

High efficiency single layer blue phosphorescent organic light-emitting diodes (PHOLEDs) without any charge transport layer were developed. A mixed host of spirobifluorene based phosphine oxide (SPPO13) and 1, 1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) was used as the host in the emitting layer. A high maximum external quantum efficiency of 15.8% and a quantum efficiency of 8.6% at 1000 cd/m² were achieved in the single-layer blue PHOLEDs without any charge transport layer. The maximum power efficiency and power efficiency at 1000 cd/m² were 31.4 and 16.9 lm/W, respectively.     

具有三角形InGaN/GaN多量子阱的高内量子效率的蓝光LED(英文)

对InGaN量子阱LED的内量子效率进行了优化研究。分别对发光光谱、量子阱中的载流子浓度、能带分布、静电场和内量子效应进行了理论分析。对具有不同量子阱数量的InGaN/GaN LED进行了理论数值比对研究。研究结果表明,对于传统结构的LED而言,2个量子阱的结构相对于5个和7个量子阱具有更好的光学性能。同时还研究了具有三角形量子阱结构的LED,研究结果显示,三角形多量子阱结构具有较高的电致发光强度、更高的内量子效率和更好的发光效率,所有的优点都归因于较高的电子-空穴波函数重叠率和低的Stark效应所产生的较高的载流子输入效率和复合发光效率。     

Improved thermal property of strained InGaAlAs/AlGaAs quantum wells for 808-nm vertical cavity surface emitting lasers

The 808-nm vertical cavity surface emitting laser (VCSEL) with strained In_0.13Ga_0.75Al_0.12As/Al_0.3Ga_0.7As quantum wells is designed and fabricated. Compared with the VCSELs with Al_0.05Ga_0.95As/Al_0.3Ga_0.7As quantum wells, the VCSEL with strained In_0.13Ga_0.75Al_0.12As/Al_0.3Ga_0.7As quantum wells is demonstrated to possess higher power conversion efficiency (PCE) and better temperature stability. The maximum PCE of 43.8% for 10-μm VCSEL is achieved at an ambient temperature of 30 ℃. The size-dependent thermal characteristics are also analyzed by characterizing the spectral power and output power. It demonstrates that small oxide-aperture VCSELs are advantageous for temperature-stable performance.     

硅BC8量子点太阳能电池中的多重激子效应

多重激子效应是指在纳米半导体晶体中,量子点吸收一个高能光子而产生多个电子-空穴对的过程,该效应可以提高单结太阳电池能量转换效率。利用碰撞电离机制和费米统计模型计算了工作温度300 K的单结硅BC8量子点太阳能电池在AM1.5G太阳光谱下的能量转换效率。对于波长在280~580 nm的入射光,多重激子效应可以大幅增强硅BC8量子点直径d>5.0 nm的量子点太阳电池的能量转换效率。硅纳米量子点的直径d=6.3~6.4 nm时,最大能量转换效率为51.6%。     

Room-temperature, continuous-wave 1-W green power by single-pass frequency doubling in a bulk periodically poled MgO:LiNbO3 crystal

Continuous-wave high-power green light generation at room temperature is reported in a single-pass frequency-doubling configuration with bulk periodically poled MgO:LiNbO3 crystal placed outside a diode end-pumped Nd:GdVO4 laser. The MgO:LiNbO3 samples of 6.95-microm domain period, uniform periodicity, and 50% duty cycle along the entire crystal length are fabricated by use of a high-voltage multipulse poling method. A maximum power of 1.18 W at 531 nm with 16.8% conversion efficiency is obtained from a 2-mm-thick, 25-mm-long MgO:LiNbO3 crystal; the corresponding internal green power and conversion efficiency are 1.38 W and 19.6%, respectively, whereas the normalized conversion efficiency is 3.3%/W.