| Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes （LEDs） |
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| 引用本文： | 陈依新,沈光地,郭伟玲,徐晨,李建军.Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes （LEDs）[J].中国物理 B,2011,20(1):17204-017204. |
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| 作者姓名： | 陈依新 沈光地 郭伟玲 徐晨 李建军 |
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| 作者单位： | Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China |
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| 基金项目： | Project supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03A121), the National Basic Research Program of China (Grant No. 2006CB604900). |
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| 摘 要： | The reasons for low output power of AlGaInP Light Emitting Diodes (LEDs) have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency (EQE) has serious impaction on the internal quantum efficiency (IQE), because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift.
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| 关 键 词： | 外部量子效率 发光二极管 LED 热量 效率下降 AlGaInP 铟锡氧化物薄膜 输出功率 |
| 收稿时间： | 2010-05-12 |
| 修稿时间： | 8/1/2010 12:00:00 AM |
Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes (LEDs) |
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| Chen Yi-Xin,Shen Guang-Di,Guo Wei-Ling,Xu Chen and Li Jian-Jun.Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes (LEDs)[J].Chinese Physics B,2011,20(1):17204-017204. |
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| Authors: | Chen Yi-Xin Shen Guang-Di Guo Wei-Ling Xu Chen and Li Jian-Jun |
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| Institution: | Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China;Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China;Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China;Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China;Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China |
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| Abstract: | The reasons for low output power of AlGaInP Light Emitting Diodes (LEDs) have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency (EQE) has serious impaction on the internal quantum efficiency (IQE), because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift. |
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| Keywords: | AlGaInP light emitting diodes internal quantum efficiency heat light power |
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