基于GaAs/InAs-GaAs/ZnSe量子点太阳电池结构的优化

基于GaAs/InAs-GaAs/ZnSe的P-i-N量子点太阳电池结构, 根据光学原理和扩散理论建立了光生电流密度与膜层厚度相关的数学模型, 定量分析了量子点层厚度等参数对太阳电池性能的影响,以期达到提高量子 点太阳电池转换效率的目的.理论模拟表明:在i层厚度取3000 nm时,优化后P(GaAs)型、N(ZnSe)型层 薄膜的最佳膜厚为1541 nm, 78 nm, 并在单一波长下太阳电池转换效率为20.1%；同时量子 点体积和温度对于量子点太阳电池I-V特性也会产生影响, 当量子点体积和温度逐渐增大时, 开路电压呈现减小趋势,使得转换效率降低.

Optimization of quantum dot solar cells based on structures of GaAs/InAs-GaAs/ZnSe

Based on the structures of GaAs/InAs-GaAs/ZnSe P-i-N quantum dot solar cells, according to the optical principle and diffusion theory, mathematic model describing the relationship between photogenerated electron current density and thickness of layer is proposed, and the effect of the quantum dot layer on the characteristics of solar cell is analyzed quantitatively for improving the power conversion efficiency of quantum dot solar cells. Simulations show that the optimal thicknesses of P(GaAs) and N(ZnSe) are 1541 nm and 78 nm respectively when the i layer thickness is 3000 nm, and the power conversion efficiency of solar cell is 20.1% at a single wavelength; At the same time, the volume of quantum dot and the temperature affect I-V property of quantum dot solar cell, and the value of open voltage reduces with the increase of the volume of quantum dot and temperature, so that the power conversion efficiency will be reduced.