染料敏化太阳电池中TiO2颗粒界面接触对电子输运影响的研究

采用溶胶-凝胶法制备TiO₂浆料,通过丝网印刷技术印刷和不同温度曲线烧结TiO₂薄膜,并应用于染料敏化太阳电池(DSC).高分辨透射电子显微镜发现,低温下多孔薄膜中TiO₂颗粒之间呈现点接触,510 ℃烧结后TiO₂颗粒间由点接触变为面接触,近邻颗粒数增多,接触面积增大.同时采用强度调制光电流谱(IMPS)和强度调制光电压谱(IMVS)技术,研究了不同颗粒接触方式和接触面积对电子传输与复合的影响.结果表明:在420- 510 ℃之间,随着烧结温度提高,颗粒接触面积增大,电子传输时间(τ _d)缩短,电子有效扩散长度(L _n)增大,暗电流减小;当烧结温度达到550 ℃时,薄膜比表面积减小,多孔结构坍塌,表面态密度增大,电子传输时间(τ _d)增大.电池光伏特性研究表明:在480-510 ℃范围内烧结得到的TiO₂薄膜,电池短路电流密度(J_sc)最佳,电池效率(η)最好. 关键词： 界面接触 电子输运 暗电流 染料敏化太阳电池     

稀土钇、镧掺杂TiO2薄膜的拉曼谱分析

采用溶胶-凝胶法在石英玻璃衬底上用旋涂法制备了未掺杂、掺杂钇和掺杂镧的TiO₂薄膜样品,对样品在700—1100 ℃范围内进行退火处理,并对样品的拉曼光谱进行了分析.分析表明:随着退火温度的升高,未掺杂TiO₂薄膜发生了从锐钛矿相经混相最终向金红石相的转换,掺杂钇和掺杂镧对TiO₂薄膜的晶相转换起阻碍作用,掺杂镧的阻碍作用更强;稀土掺杂能使TiO₂薄膜晶粒细化,并使晶粒内部应力增大从而阻碍晶格振动,掺杂镧比掺杂钇的效果 关键词： 2薄膜')" href="#">TiO₂薄膜 稀土掺杂 拉曼光谱 溶胶-凝胶     

溶胶-凝胶法Er_2O_3薄膜的结构和光学特性

针对稀土Er掺杂Si光源中Er离子掺杂浓度低的问题,采用溶胶-凝胶(Sol-gel)法在Si(100)和SiO2/Si(100)基片上旋涂法制备Er2O3光学薄膜,Er离子浓度与以前掺杂方法相比提高了2个数量级.900℃热处理获得单一立方结构的Er2O3薄膜材料.光致发光(PL)特性研究表明在654nm波长的激光泵浦下,Er2O3薄膜材料获得了1.535μm的发光峰,并具有较小的温度猝灭1/5.在SiO2/Si(100)基体上制备的Er2O3薄膜材料的光致发光强度比Si(100)基体上制备的薄膜提高2-3倍.研究结果表明具有强光致发光特性的Er2O3薄膜是一种有前景的硅基光源和放大器材料.     

Er3+掺杂SiO2复合的Al2O3粉末结构及光致发光特性

采用溶胶-凝胶(sol-gel)工艺制备0.1 mol% Er³⁺掺杂Al₂O₃体系和SiO₂-Al₂O₃复合体系粉末. 实验结果表明：5 mol%的SiO₂复合加入Al₂O₃抑制γ→θ和θ→α相转变. 掺0.1 mol%Er³⁺:Al₂O₃体系粉末，900℃烧结，在1.47—1.63μm波段内光致发光(PL)谱为中心波长1.53 μm、半高宽56 nm的单一宽峰，1000—1200℃烧结，劈裂为多峰PL谱. 掺0.1 mol%Er³⁺:SiO₂-Al₂O₃复合体系粉末，在高达1200℃烧结，仍保持中心波长1.53 μm的单一宽峰PL谱，由于—OH更完全的脱除，PL强度较900℃烧结Al₂O₃体系，SiO₂-Al₂O₃复合体系均提高1个数量级. 关键词： 2-Al₂O₃复合体系')" href="#">SiO₂-Al₂O₃复合体系 掺铒 溶胶-凝胶工艺 光致发光     

溶胶-凝胶法制备(Ba0.7Sr0.3)TiO3/LaNiO3异质薄膜及其结构和介电性质研究

采用改进的溶胶-凝胶方法在单晶Si(100)衬底上制备了介电性能优异的(Ba_0.7Sr_0.3)TiO₃/LaNiO₃异质薄膜.实验发现，在750 ℃下 、O₂气氛中晶化的LaNiO₃薄膜的电阻率最小.C-V与I-V特性测量表明(Ba_0.7Sr_0.3)TiO₃薄膜具有优异的介电性能，在频率为50kHz、零偏压下的相对介电常数ε_r>300，偏压为6V时漏电流密度J_L<1.2×10^-6A/cm². 关键词： xSr_1-x)TiO_３铁电薄膜')" href="#">(Ba_xSr_1-x)TiO_３铁电薄膜 ３底电极')" href="#">LaNiO３底电极 溶胶-凝胶法     

(Ni0.8Zn0.2Fe2O4)epoxy-PZT双层膜中的磁电效应

讨论了Ni_0.8Zn_0.2Fe₂O₄ (NZFO)与锆钛酸铅(PZT)的双层膜结构样品的磁电(ME)效应.NZFO粉料由溶胶-凝胶法制成，再经900℃热压，并高温烧结.在该双层膜中测量到了很强的磁电相互作用.发现横向的磁电效应比纵向效应大一个数量级，并且随NZFO烧结温度的提高而增加.当烧结温度从950℃上升到1380℃时，横向ME电压系数(α_E)的最大值变化范围为25.6 mV Am^-2≤α_E≤199.6 mV Am^-2.理论分析显示NZFO-PZT双层膜样品中ME效应源于NZFO与PZT之间相对良好的磁电耦合. 关键词： 镍铁氧体 PZT 热压法 ME效应     

锐钛矿相纳米TiO2晶体生长动力学及生长过程控制

研究了采用溶胶-凝胶法经由前驱物钛酸四异丙酯水解制备纳米TiO₂结构相变及锐钛矿晶体生长动力学过程. 研究结果表明,在酸性条件下水解,由于高压热处理温度的变化导致锐钛矿向金红石相的结构相变,锐钛矿相纳米TiO₂生长活化能在250℃以下和以上分别为(15.8±4.5)kJ/mol和(80.2±1.0)kJ/mol;而在碱性条件下水解的活化能值为(3.5±0.4)kJ/mol. 在不发生结构相变的条件下,酸性水解条件下锐钛矿相纳米TiO₂生长速 关键词： 2')" href="#">纳米TiO₂ 锐钛矿 生长动力学 溶胶-凝胶法     

金属氧化物超导陶瓷Y-123体系烧结过程与结构缺陷的正电子实验研究

利用正电子湮没技术,结合X射线衍射和扫描电子显微镜结构分析,对Y-123超导体烧结过程进行了研究,给出了烧结时间、烧结温度对该体系结晶度和晶体结构的影响特征,发现在950℃温度烧结下,随烧结时间的增加,Y-123体系的正交畸变度增加;而就整体而言,正电子平均寿命随烧结温度和烧结时间增加而增加,并趋于饱和.证明在烧结温度为920—950℃、烧结时间为12—72h的实验条件下,Y-123超导材料中的缺陷分布趋于稳定.讨论了烧结过程中材料内部的缺陷变化特征 关键词： 正电子寿命谱 2Cu₃O_7-δ超导体')" href="#">YBa₂Cu₃O_7-δ超导体 烧结过程 晶体结构     

椭偏光谱法研究溶胶-凝胶TiO2薄膜的光学常数

以钛酸丁酯为前驱体,采用溶胶-凝胶工艺成功制备了TiO₂薄膜.利用反射式椭圆偏振光谱仪测量了薄膜的椭偏参量Ψ和Δ,并用Cauchy模型对椭偏参数进行数据拟合,得到了薄膜的厚度和光学常数在380—800 nm的色散关系.用分光光度计测量了薄膜的反射率,并用干涉法计算薄膜的厚度;使用原子力显微镜观测了薄膜的表面微结构,分析讨论了不同退火温度处理的薄膜微结构与光学常数之间的关系.研究结果表明,Cauchy模型能较好地符合溶胶-凝胶TiO₂薄 关键词： 光学常数 2薄膜')" href="#">TiO₂薄膜 溶胶-凝胶 椭圆偏振     

溶胶凝胶制备氧化钒薄膜的生长机理及光电特性

采用溶胶凝胶法, 在不同的退火温度下制备了不同的氧化钒薄膜. 利用扫描电子显微镜、X射线衍射仪、高阻仪、紫外-可见分光光度计和傅里叶红外光谱仪等, 对薄膜的形貌、晶态、电学和光学特性进行了分析. 结果表明, 溶胶凝胶法获取V₂O₅薄膜的最佳退火温度为430 ℃, 低于此温度不利于使有机溶剂充分分解, 高于此温度则V–O键发生裂解、形成更多的低价态氧化钒. 本文制备的氧化钒薄膜具有较高的电阻温度系数和光吸收率, 适合应用在非制冷红外探测器中. 本文揭示了溶胶凝胶法制备氧化钒薄膜的生长机理. 关键词： 氧化钒薄膜 溶胶凝胶 光电特性 生长机理     

溶胶-凝胶法Er2O3薄膜的结构和光学特性

针对稀土Er掺杂Si光源中Er离子掺杂浓度低的问题,采用溶胶-凝胶（Sol-gel）法在Si(100)和SiO2/Si(100)基片上旋涂法制备Er₂O₃光学薄膜,Er离子浓度与以前掺杂方法相比提高了2个数量级.900 ℃热处理获得单一立方结构的Er₂O₃薄膜材料.光致发光（PL）特性研究表明在654 nm波长的激光泵浦下,Er₂O₃薄膜材料获得了1.535 μm的发光峰,并具有较小的温度猝灭1/5.在SiO₂/Si(100)基体上制备的Er2O3薄膜材料的光致发光强度比Si(100)基体上制备的薄膜提高2-3倍.研究结果表明具有强光致发光特性的Er₂O₃薄膜是一种有前景的硅基光源和放大器材料.     

纳米β-FeSi2/a-Si多层膜室温光致发光分析

采用射频磁控溅射的方法,在Si（100）基片上制备了纳米β-FeSi₂/Si多层结构,利用X射线衍射、透射电子显微镜、光致发光光谱等表征技术,研究了β-FeSi₂/Si多层结构的结构、成分和光致发光特性.研究结果表明：利用磁控溅射法得到的Fe/Si多层膜,室温下能够检测到β-FeSi₂的1.53 μm处光致发光信号;未退火时多层膜是（非晶的FeSi₂+β-FeSi₂颗粒）/非晶Si结构,退火后则是 关键词： 2')" href="#">β-FeSi₂ 磁控溅射 XRD 光致发光光谱     

Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method

E₂SiO₅ thin films were fabricated on Si substrate by reactive magnetron sputtering method with subsequent annealing treatment. The morphology properties of as-deposited films have been studied by scanning electron microscope. The fraction of erbium is estimated to be 23.5 at% based on Rutherford backscattering measurement in as-deposited Er-Si-O film. X-ray diffraction measurement revealed that Er₂SiO₅ crystalline structure was formed as sample treated at 1100 °C for 1 h in O₂ atmosphere. Through proper thermal treatment, the 1.53 μm Er³⁺-related emission intensity can be enhanced by a factor of 50 with respect to the sample annealed at 800 °C. Analysis of pump-power dependence of Er³⁺ PL intensity indicated that the upconversion phenomenon could be neglected even under a high photon flux of 10²¹(photons/cm²/sec). Temperature-dependent photoluminescence (PL) of Er₂SiO₅ was studied and showed a weak thermal quenching factor of 2. Highly efficienct photoluminescence of Er₂SiO₅ films has been demonstrated with Er³⁺ concentration of 10²²/cm³, and it opens a promising way towards future Si-based light source for Si photonics.     

Annealing effects on the structure and electrical characteristics of amorphous Er2O3 films

Amorphous Er 2 O 3 films are deposited on Si (001) substrates by using reactive evaporation.This paper reports the evolution of the structure,morphology and electrical characteristics with annealing temperatures in an oxygen ambience.X-ray diffraction and high resolution transimission electron microscopy measurement show that the films remain amorphous even after annealing at 700 C.The capacitance in the accumulation region of Er 2 O 3 films annealed at 450 C is higher than that of as-deposited films and films annealed at other temperatures.An Er 2 O 3 /ErO x /SiO x /Si structure model is proposed to explain the results.The annealed films also exhibit a low leakage current density (around 1.38 × 10 4 A/cm 2 at a bias of 1 V) due to the evolution of morphology and composition of the films after they are annealed.     

退火温度对Er/Yb共掺Al2O3薄膜的光致荧光光谱的影响

通过对不同退火条件下Er/Yb共掺Al_２O_３薄膜光致荧光(PL)光谱的 系统分析，研究了高Er/Yb掺杂浓度所导致的晶体场变化对薄膜PL光谱的影响，并结合薄膜结构分析，探讨了Al_２O_３薄膜的结晶状态在Er^３＋激活、PL光谱宽化 中的作用及可能的物理机理.研 究结果表明：退火处理所导致的Er^３＋ PL光谱的变化与薄膜的微观状态之 间有着密 切的联系.在600—750℃范围内，薄膜呈非晶态结构，薄膜荧光强度的增加主要是薄膜内缺 陷减少所致；在800—900℃范围内，γ-Al_２O_３相的出现是导致荧 光强度明显增加的主 要原因；当退火温度为1000℃时，Er，Yb的大量析出致使荧光强度的急剧下降.此外，对PL 光谱线形分析表明，各子能级跃迁的相对强度变化是导致荧光光谱宽化的主要因素. 关键词： Er/Yb共掺 ２O_３薄膜')" href="#">Al_２O_３薄膜 光致荧光     

The influence of substrate on the properties of Er2O3 films grown by magnetron sputtering

The structural properties and the room temperature luminescence of Er₂O₃ thin films deposited by RF magnetron sputtering have been studied. Films characterized by good morphological properties have been obtained by using a SiO₂ interlayer between the film and the Si substrate. The evolution of the properties of the Er₂O₃ films due to rapid thermal annealing processes in O₂ ambient performed at temperatures in the range 800-1200 °C has been investigated in details. The existence of well-defined annealing conditions (temperature of 1100 °C or higher) allowing to avoid the occurrence of extensive chemical reactions with the oxidized substrate has been demonstrated and an increase of the photoluminescence (PL) intensity by about a factor of 40 with respect to the as deposited material has been observed. The enhanced efficiency of the photon emission process has been correlated with the longer lifetime of the PL signal. The same annealing processes are less effective when Er₂O₃ is deposited on Si. In this latter case interfacial reactions and pit formation occur, leading to a material characterized by stronger non-radiative phenomena that limit the PL efficiency.     

镶嵌在氧化硅薄膜中纳米晶硅的可见光荧光谱与发光机制的研究

采用对非晶氧化硅薄膜退火处理方法，获得纳米晶硅与氧化硅的镶嵌结构．室温下观察到峰位为2.40eV光致发光．系统地研究了不同退火温度对薄膜的Raman谱、光荧光谱及光电子谱的影响．结果表明，荧光谱可分成两个不随温度变化的峰位为1.86和2.30eV的发光带．Si2p能级光电子谱表明与发光强度一样Si⁴⁺强度随退火温度增加而增加．Si平均晶粒大小为4.1—8.0nm，不能用量子限制模型解释蓝绿光的发射．纳米晶硅与SiO₂界面或SiO₂中与氧有关的缺陷可能是蓝绿光发射的主要原因 关键词：     

Role of Bi ions for Er ions efficient 1.54 μm light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method

Er/Bi codoped SiO₂ thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 °C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er³⁺-related 1.54 μm light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 μm reached maximum at 800 °C and decreased dramatically at 1000 °C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi³⁺ ions for Er³⁺ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi³⁺ ions can provide a perfect environment for Er³⁺ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi³⁺ ions to Er³⁺ ions is evidenced and found to be a more efficient way for Er³⁺ ions near infrared emission. This makes the Bi³⁺ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED.     

Excitation of Er atoms by energy transfer from Si nanocrystallites embedded in SiO2 matrices fabricated by laser ablation

We have investigated excitation of Er³⁺ ions via energy transfer from Si nanocrystallites embedded in SiO₂ films. The Er-doped films were fabricated using a laser ablation technique. We found that a photoluminescence (PL) excitation spectra of Er³⁺ ions coincides with that of Si nanocrystallites. Thus, it is evident that Er³⁺ ions are excited via the luminescent singlet state in Si nanocrystallites. Furthermore, we obtained the results that support the energy transfer mechanism. PL intensity of Er³⁺ ions increases with Er concentration while that of Si nanocrystallites decrease inversely. PL intensity of Er³⁺ ions increases with temperature from cryogenic to room temperature under photo-excitation at power density higher than 110 mW/cm². The increase is characteristic of the luminescent state in Si nanocrystallites but not any state in Er³⁺ ions. PACS 61.72.Ww; 61.46.+w; 81.15Fg