High-Temperature Dielectric Response and Multiscale Mechanism of SiO2/Si3N4 Nanocomposites

The high-temperature dielectric properties of SiO₂/Si₃N₄ nanocomposites are investigated theoretically and experimentally. Its permittivities and loss tangents at the temperature ranging from room temperature to 1300°C at 9.0GHz are measured by the resonant cavity method. The SiO_2/Si₃N₄ nanocomposites show complex dielectric behaviour at elevated temperature, and a multi-scale model is proposed to describe the dependence of the dielectric properties in the SiO₂/Si₃N₄ on its compositional variations. Such a theory is needed so that the available property measurements could be extrapolated to other operating frequencies and temperatures.     

Design of a TE10-TE30 Rectangular Mode Converter for 4.6GHz LHCD Launcher in the Experimental Advanced Superconducting Tokamak

A compact rectangular TE10-TE30 mode converter is developed for the lower hybrid current drive （LHCD） launcher on the Experimental Advanced Superconducting Tokamak （EAST） at 4.6 GHz. The converter with periodic width perturbation aims to divide the microwave power into three sub-waveguides in the poloidal direction. We present the design and numerical calculation of the mode converter. Calculations are performed on the ripple wall converter by codes based on numerical solving the coupled-mode differential equations and on the simulation of the High Frequency Structure Simulator （HFSS） package. The resulting conversion efficiency from TE10 mode to TE30 mode exceeds 95% within the bandwidth from 4.56 GHz to 4.64 GHz, and the return loss of the oversized transducer can be considerably decreased to 0.068% by means of a capacitive button embedded in the E-plane of the waveguide.     

Investigation of an S-Band Tapered Magnetically Insulated Transmission Line Oscillator

We present an improved structure of the tapered magnetically insulated transmission fine oscillator （MILO）. Simulation results show that this structure can obtain more microwave power with higher efficiency. Studies indicate that the distance between the load support legs and the last vane can affect the operation characteristics of this device. In the experiments, we obtain microwave with peak power of 2 GW, frequency of 2.63 GHz, and mode TMol. The beam to microwave power efficiency is 11%.     

Highly reproducible large-area and double-sided pulsed laser deposition of HTSC YBCO:Ag thin films for microwave applications

Large-area pulsed laser deposition (PLD) producing high-quality YBa₂Cu₃O_7-x (YBCO) thin films on both sides of R-plane sapphire substrates with CeO₂ buffer layer is used routinely to optimize planar microwave stripline filters for satellite and mobile communication systems. A relatively simple PLD arrangement with fixed laser plume and rotating substrate, with an offset between the laser plume and the center of the substrate is employed to deposit laterally homogeneous 3-inch-diameter Ag-doped YBCO thin films. The YBCO:Ag films are about 250 nm thick and have laterally homogeneous critical current densities of more than 3.5 MA/cm² at 77 K and homogeneous maps of microwave surface resistance R_s of about 40 m Q at 145 GHz and 77 K. The R_s at 8.5 GHz and 77 K, determined in the center position of the YBCO:Ag films, remains constant at about 370 7 Q up to a microwave surface magnetic field of about 10 mT. After experience with more than 700 double-sided 3-inch-diameter films, a high degree of homogeneity and reproducibility of j_c and R_s is reached. The PLD-YBCO:Ag films are suitable for microwave applications envisaged for future communication systems.     

Sinusoidal Steady State Analysis on 4H--SiC Buried Channel MOSFETs

With the combined use of the drift-diffusion （DD） model, experiment measured parameters and small-signal sinusoidM steady-state analysis, we extract the Y-parameters for 4H-SiC buried-channel metal oxide semicon- ductor field effect transistors （BCMOSFETs）. Output short-circuit current gain G and Mason＇s invariant U are cMculated for extrapolating unity current gain frequency in the common-source configuration fT and the maximum frequency of oscillation fmax, respectively. Here fT = 800 MHz and fmax= 5 GHz are extracted for the 4H-SiC BCMOSFETs, while the field effect mobility reaches its peak value 87cm2/Vs when VGs = 4.5 V. Simulation results clearly show that the characteristic frequency of 4H-SiC BCMOSFETs and field effect mobility are superior, due to the novel structure, compared with conventional MOSFETs.     

Growth of SiNx and SiCx thin films by pulsed reactive crossed-beam laser ablation

SiN_x and SiC_x films were grown on Si(001) and Si(111) using pulsed reactive crossed-beam laser ablation of Si with N₂ and CH₄. The scattering processes in the ablation plasma and the reactive gas pulse were investigated using time-of-flight quadrupole mass spectroscopy. The film crystallinity was determined by FTIR spectroscopy, X-ray diffraction, and reflection high-energy electron diffraction, while the stoichiometry and chemistry were investigated using XPS. SiN_x was amorphous over the investigated temperature range of 25-850 °C, and x increased monotonically with temperature from 0.67 to 0.94. SiC_x films grown at 850 °C consisted of oriented large #-SiC crystallites embedded in a Si matrix.     

Stress analysis at the interface between Ni-P coating and SiCp/Al substrate of space mirror

This paper investigates the mechanical properties at the interface of the coating-substrate system, which comprises the electroless nickel-phosphorus (Ni-P) coating and the aluminum matrix composite substrate reinforced by the silicon carbide particles (SiC_p/Al), and is used for the space mirror. To estimate the adhesion of Ni-P coating on SiC_p/Al substrate, the scratch adhesion testing has been performed by drawing a spherically tipped diamond indenter with a radius of 200 μm over the coated surface. The influence of the coating thickness on the interfacial stress induced by the inertial accelerations, temperature gradients and thermal soaks has been evaluated by simulation analysis based on the finite element method. The results of the scratch testing indicate that the adhesion strength of Ni-P coating to SiC_p/Al composite is more than 3.0 GPa. Compared the maximum value of the interfacial stress obtained by simulation analysis with results of the scratch testing, it is can be seen that the mirror has enough safety margin. Furthermore, the most significant conclusion that can be drawn from this work is that the coating thickness should not exceed 45 μm in order to ensure the performance and reliability of Ni-P coating and SiC_p/Al substrate system for space applications.     

Investigation of SOI Substrates Incorporated with Buried MoSi2 for High Frequency SiGe HBTs

Highly arsenic-doped Si-on-insulator （SOI） substrate incorporated with buried MoSi2 layers is fabricated aiming at decreasing the collector series resistance of SiGe heterojunction bipolar transistors （HBTs） on SOI, thereby enhancing cutoff frequency （fT） performance and increasing the maximum value of fT （fTMAX ）. The .fT performance at medium current is enhanced and current required for fT = 15 GHz is reduced by half The value of fTMAX is improved by 30%.     

Laser-Duration Dependence of Emission Properties of High-Order Harmonic Generation

Quantitative investigations are made for the laser-duration dependence of the emission properties of high-order harmonic generation （HHG）. HHG emission properties produced by few-cycle lasers show some useful characteristics. The cutoff energy is less than that by laser for infinite duration. The single energy distribution pulse decreases much faster than its duration as the laser duration grows. A two-cycle laser with carrier-envelope phase of 0° can produce a single distribution pulse peaked at the laser carrier phase 1.22 rad and spanned 1.18 rad with the cutoff energy 2.9Up ＋ Ip and a bandwidth 0.63Up, where Up is the ponderomotive potential of the laser field and Ip is the atomic ionization potential.     

Electrically and magnetically tunable microwave device using (Ba, Sr) TiO3/Y3Fe5O12 multilayer

Ferroelectric (Ba_0.6Sr_0.4)TiO₃ (BST) thin films have been deposited by pulsed laser deposition onto single-crystal Y₃Fe₅O₁₂ (YIG) substrates with/without a MgO buffer layer. The structure and microwave properties of the BST films have been investigated as a function of substrate orientation and O₂ deposition pressures (50-800 mTorr). The crystallographic orientation of BST film varies with the deposition conditions. The dielectric properties of the ferroelectric were measured using interdigitated capacitors deposited on top of the BST film. BST films exhibit high tunability (20-40%) and high dielectric Q=1/cos' (30-50) with a dc bias field of 67 kV/cm at 10 GHz. A coplanar waveguide transmission line was fabricated from a (001)-oriented BST film on (111)YIG which exhibited a 17° differential phase shift with an applied dc bias field of 21 kV/cm (10 GHz). An equivalent differential phase shift was achieved with a magnetic field of 160 Gauss.     

Adjustable microwave absorption properties of flake shaped (Ni0.5Zn0.5)Fe2O4/Co nanocomposites with stress induced orientation

Flake shaped (Ni_0.5Zn_0.5)Fe₂O₄/Co nanocomposites were successfully fabricated by co-precipitating of Ni-Zn ferrite on the surface of cobalt nanoflakes. The electromagnetic characteristics of the samples were studied at the frequency of 0.1–14 GHz. The results showed that the cobalt nanoflakes in compacted nanocomposites were well orientated, and the nanocomposites were characterized with low optimal reflection loss (RL) of −33.8 dB at 11.5 GHz and broad RL bandwidth for <−20 dB in the frequency range of 7.6–12.1 GHz. At the same time, the position of the absorptive band can be adjusted by changing the mass ratio of ferrite to cobalt in the nanocomposites. It is proposed that the excellent microwave absorption properties are related to the combination of strong shape anisotropy of cobalt nanoflakes and adjustable dielectric loss.     

Bianisotropy Picture of Higher Permeability at Higher Frequencies

With an effective bianisotropy picture, high-frequency behaviours of different magnetic materials can be reconciled, and the higher permeability and higher resonance frequencies are achieved even in the GHz range. The validity of the bianisotropy picture is quantitatively verified by the in-plane anisotropic Fe₃₄Co₅₅Zr₁₁ thin films. A prolate elliptical precession of the magnetization about its equilibrium direction is the key point, which can be induced by an artificial or an intrinsic bianisotropy system.     

Microwave reflection properties of planar anisotropy Fe50Ni50 powder/paraffin composites

The reflection properties of planar anisotropy Fe₅₀Ni₅₀ powder/paraffin composites have been studied in the microwave frequency range. The permeability of Fe₅₀Ni₅₀ powder/paraffin composites is greatly enhanced by introducing the planar anisotropy, and can be further enhanced by using a rotational orientation method. The complex permeability can be considered as the superposition of two types of magnetic resonance. The resonance peak at high frequency is attributed to the natural resonance, while the peak at low frequency is attributed to the domain-wall resonance. The simulated results of the microwave reflectivity show that the matching thickness, peak frequency, permeability, and permittivity are closely related to the quarter wavelength matching condition. The Fe₅₀Ni₅₀ powder/paraffin composites can be attractive candidates for thinner microwave absorbers in the L-band (1-2 GHz).     

Carrier-Envelope-Phase Dependence of Emission Properties of High-Order Harmonic Generation

The carrler-envelope-phase （CEP） dependence of the emission properties of high-order harmonic generation （HHG） are quantitatively investigated. Calculation shows that a two-cycle laser with CEP of 15° can produce a single energy distribution pulse peaked at 0.94 radian （tad） and spanned 1.29 tad with the cutoff energy 2.9Up ＋ Ip and a bandwidth 0.86Up （where Up is the ponderomotive potential of the laser field and Ip is the atomic ionization potential）. The CEP dependence of the energy and temporal localizations of the single distribution pulse show interesting 180° periodic structures. These characteristics may be useful in optimizing attosecond x-ray sources and measurements.     

An Artificially Garnet Crystal Materials Using In Terahertz Waveguide

A hypothesis is brought forward that the materials with low propagation loss in both optical and microwave band may exhibit good performance in terahertz （THz） band because THz wave band interspaces those two wave bands. For the purpose-of exploring a kind of low-loss material for THz waveguide, Lu2.1Bi0.9Fe5O12（LuBiIG） garnet films are prepared by liquid phase epitaxy （LPE） method on a gadolinium gallium garnet （GGG） substrate from lead-free flux because of the good properties in both optical and microwave bands. In microwave band, the ferromagnetic resonance （FMR） linewidth of the film 2△H = 2.8-5.1Oe; in optical band, the optical absorption coefficient is 600cm^-1 at visible range and about 100-170cm^-1 when the wavelength is longer than 800nm. In THz range, our hypothesis is well confirmed by a THz-TDS measurement which shows that the absorbance of the film for THz wave is 0.05-0.3 cm 1 and the minimum value appears at 2.3 THz. This artificial ferromagnetic material holds a great promise for magnetic field tunable THz devices such as waveguide, modulator or switch.     

Zero-Dispersion Slow Light with Wide Bandwidth in Photonic Crystal Coupled Waveguides

By introducing an adjustment waveguide besides the incident waveguide, zero-dispersion slow light with wide bandwidth can be realized due to anticrossing of the incident waveguide mode and the adjustment waveguide mode. The width of the adjustment waveguide （W2） and the hole radii of the coupling region （r＇） will change the dispersion of incident waveguide mode. Theoretical investigation reveals that zero dispersion at various low group velocity vg in incident waveguide can be achieved. In particular, proper W2 and r＇ can lead to the lowest vg of 0.0085c at 1550 nm with wide bandwidth of 202 GHz for zero dispersion.     

1.5 μm Ti:LiNbO3电光波导强度调制器

用钛内扩散技术和常规光刻手段,研制出1.5μmLiN_bO₃电光波导强度调制器。它由单模波导非对称Mach-Zehnder干涉仪和三电极共平面波导组成。干涉仪的两个臂长相差波导波长的四分之一,使器件在最佳线性点工作,无需外加电偏压。集总调制和行波调制的理论带宽分别为1GHz和7.8GHz。对于集总器件,测量了调制特性,半波电压为9.5V,调制带宽为0.7GHz。     

Microwave Magnetic Permeability of Fe3O4 Nanoparticles

Well-dispersed Fe3O4 nanoparticles are synthesized via an oxidization method with NANO2 as oxidant. The microwave magnetic properties of the composites are studied with different volume fractions of fe3O4 nanoparticles. It is found that a lower volume fraction corresponds to a higher magnetic resonance frequency. This could be ascribed to the enhancement of exchange interaction with a weakened dipolar interaction when the volume fraction decreases.     

Optical and conductive properties of AlSi-alloy/SiCp composites: application in modelling CO2 laser processing of composites

The optical properties—reflectivity, real part of the refractive index, absorption coefficient as well as the thermal and electrical conductivity of AlSi-alloy/SiC_p composite were measured. The optical parameters and both conductivities decreased with the increase of SiC_p particles volume in AlSi-alloy matrix. This decrease was almost linear for the volume fraction of SiC_p particle up to 10 vol% of the total mass of the composite. For the 15 vol% of SiC_p particles, the departure from linearity is connected with the presence of additional phases in AlSi-alloy/SiC_p composite materials. The measured temperature dependencies of optical reflectivity and electrical conductivity for AlSi-alloy/SiC_p 15 vol% are of metallic character. Modelling of the interaction of the CO₂ laser radiation with AlSi-alloy/SiC_p 15 vol% composite should allow to estimate the initiation time at which the surface composite reaches melting temperature.     

Cu100-xZrx金属玻璃的电阻-压力特性

 本文在0~0.8 GPa的压力范围内对金属玻璃Cu_100-xZr_x（x=70，75）进行了室温下的电阻测量。利用实验得到的负的电阻-压力系数α_p及推广的Ziman理论着重计算并讨论了压力下d波相移η₂(E_F)项对α_p的贡献。