Sinusoidal Steady State Analysis on 4H--SiC Buried Channel MOSFETs |
| |
| Authors: | ZHANG Tao LU Hong-Liang ZHANG Yi-Men ZHANG Yu-Ming YE Li-Hui |
| |
| Affiliation: | Microelectronics Institute, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi'an 710071 |
| |
| Abstract: | With the combined use of the drift-diffusion (DD) model, experimental measured parameters and small-signal sinusoidal steady-state analysis, we extract the Y-parameters for 4H--SiC buried-channel metal oxide semiconductor field effect transistors (BCMOSFETs). Output short-circuit current gain G and Mason's invariant U are calculated for extrapolating unity current gain frequency in the common-source configuration fT and the maximum frequency of oscillation fmax, respectively. Here fT=800MHz and fmax=5GHz are extracted for the 4H--SiC BCMOSFETs, while the field effect mobility reaches its peak value 87cm2/Vs when VGS=4.5V. Simulation results clearly show that the characteristic frequency of 4H--SiC BCMOSFETs and field effect mobility are superior, due to the novel structure, compared with conventional MOSFETs. |
| |
| Keywords: | 71 20 Nr 72 20 -i 73 40 Qv |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理快报》浏览原始摘要信息 |
|
点击此处可从《中国物理快报》下载免费的PDF全文 |
|
