金红石→萤石TiO2相变的第一性原理计算

利用第一性原理平面波密度泛函理论并结合准谐德拜模型,对TiO₂从金红石结构到萤石结构的相变进行理论研究.依据焓相等原理,得到TiO₂从金红石结构到萤石结构的相变压强为45.32 GPa,并通过吉布斯能的计算发现相变压强随温度的增加而增加,运用拟合的方法估计实验条件下的相变压强(温度为1900-2100K时,P_t=47.604~47.756 GPa).运用等吉布斯能原理,得到零压下从金红石到萤石结构TiO₂的相变温度为2029 K.计算结果与实验及其他理论值相符,并通过准谐德拜模型成功获得相变前后的结构和热力学性质,如相对体积、热膨胀系数、热容和德拜温度等.     

高压下岩盐矿和单斜结构AgCl的电子行为

 利用基于密度泛函理论的赝势平面波方法，计算了AgCl在高压下的结构行为和电子性质，交换关联函数采用广义梯度近似（GGA）。通过比较焓随压力的变化关系，从理论上确定了AgCl从岩盐矿结构相变到单斜结构的转变压强。预测了这两种结构在布里渊区中的价带顶和导带底的位置，结果表明：盐岩矿和单斜结构的AgCl都是具有间接带隙的半导体。还计算了这两种结构的带隙和电子态密度随压强的变化情况，发现在这两种结构相变之前都不会发生金属化转变。电荷转移研究发现，随着压强的增加，Ag原子和Cl原子之间成键的共价性增强，离子性减弱。     

极端条件下6Li2O的热力学性能与电子结构

 采用密度泛函理论与准谐振德拜模型研究了面心立方相的⁶Li₂O在极端条件下的热力学性质与电子结构。结果表明: ⁶Li₂O的热膨胀系数在任何温度下都随压强增加明显降低,但仅当压强较低(低于40 GPa)时,温度对6Li2O的热膨胀系数的影响才明显;O原子半径随压强增大而迅速降低,而随温度的变化并不明显;在低压条件下(低于40 GPa),带隙随温度的升高缓慢降低;而在高压条件下(高于40 GPa),温度对带隙宽度的影响几乎可以忽略;无论在什么温度条件下,带隙宽度均随压强的增大而迅速增加。     

氧化硅层厚度对Si/SiO2界面电子态结构与光学性质的影响

在氧化硅上生长纳米硅晶,保持氧化硅的直接带隙结构,降低其能带带隙,以用于发光和光伏。采用基于密度泛函理论的第一性原理研究了块体α-方石英、薄膜α-方石英、Si/SiO₂界面的电子态结构和Si/SiO₂界面的光学性质。结果显示,其均为直接带隙半导体,当薄膜α-方石英厚度和Si/SiO₂界面氧化硅层厚度逐渐减小时,能带带隙均逐渐变大,表现出明显的量子限制效应。光学性质计算结果表明：Si/SiO₂界面虚部介电峰和吸收峰的峰值随氧化硅层厚度降低而显著升高,且峰位向高能量方向蓝移。使用脉冲激光沉积制备了氧化硅上硅晶薄膜,测量了Si/SiO₂界面样品的PL光谱,在670 nm处存在一个强的发光峰,在波长超过830 nm后,Si/SiO₂界面样品的发光强度不断升高。因此,可以通过控制Si/SiO₂界面氧化硅层厚度有效地调控Si/SiO₂界面的电子态结构和光学性质,引进边缘电子态,调控其带隙进入1～2 eV区间,获取硅基发光材料...     

高压下Zn2GeO4带隙变化的第一性原理研究

采用基于密度泛函理论的第一性原理计算研究了Zn₂GeO₄晶体在高压下的电子结构和带隙变化行为. 研究结果发现, 随着压强的增加, Zn₂GeO₄ 能带间隙先变大, 在压强为9.7 GPa时达到最大值, 然后减小. 通过电子态密度、电荷布居数和电子差分密度分布图的研究分析可知:在低压区域(0< P< 9.7 GPa), 带隙的变大主要是由于原子间距离的减小造成的共价性增强和Ge原子随压强的变大局域性增强引起的; 在高压区域(P>9.7 GPa), 则是出现了离域现象, 诱发了离域电子的产生, 从而使带隙减小.     

掺杂Si/SiO_2界面电子结构与光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理方法,在局域密度近似(LDA)下研究了B掺杂Si/SiO_2界面及其在压强作用下的电子结构和光学性质.能带的计算结果表明:掺杂前后Si/SiO_2界面均属于直隙半导体材料,但掺B后界面带隙由0. 74 eV减小为0. 57 eV,说明掺B使材料的金属性增强;对B掺杂Si/SiO_2界面施加正压强,发现随着压强不断增大,Si/SiO_2界面的带隙呈现了逐渐减小的趋势,并且由直隙逐渐转变为间隙.光学性质的计算结果表明:掺B对Si/SiO_2界面在低能区(即红外区)的介电函数虚部、吸收系数、折射率以及反射率等光学参数有显著影响,且在红外区出现新的吸收峰;对B掺杂Si/SiO_2界面施加正压强,随着压强增大,红外区的吸收峰逐渐消失,而在紫外区出现了吸收峰.上述结果表明,对Si/SiO_2界面掺B及施加正压强均可调控Si/SiO_2界面的电子结构与光学性质.本文的研究为基于Si/SiO_2界面的光电器件研究与设计提供一定的理论参考.     

五种SiO_2晶体原子和电子结构的第一性原理研究

α-石英、β-石英、α-方石英、β-方石英和超石英是自然界中SiO_2常见的五种晶型.本文利用第一性原理平面波赝势方法,系统计算了五种SiO_2晶体的体弹性模量、电荷密度、电子态密度,能带结构,并和可获得的实验进行了比较.α-英、β-石英和具有空间群F d3m结构的β-方石英显示间接的带隙,而α-方石英,超石英和具有空间群P2_13和I42d结构的β-方石英显示直接的带隙.五种晶型SiO_2的带隙宽度均大于5.5 eV,都是绝缘体.     

第一性原理研究厚度和空位缺陷对Si/SiO2界面电子结构与光学性质的影响

采用基于密度泛函理论的平面波超软赝势方法,在局域密度近似（LDA）下研究了Si纳米层厚度和O空位缺陷对Si/SiO2界面电子结构及光学性质的影响．电子结构计算结果表明：在0.815~2.580nm的Si层厚度范围内,Si/SiO2界面结构的能隙随着厚度减小而逐渐增大,表现出明显的量子尺寸效应,这与实验以及其他理论计算结果一致;三种不同的O空位缺陷的存在均使得Si/SiO2界面能隙中出现了缺陷态,费米能级向高能量方向移动,且带隙有微弱增加．光学性质计算结果表明：随着Si纳米层厚度的减小,Si/SiO2界面吸收系数产生了蓝移;O空位缺陷引入后,界面光学性质的变化主要集中在低能区,即低能区的吸收系数和光电导率显著增加．可见,改变厚度和引入缺陷能够有效地调控Si/SiO2界面体系的电子和光学性质,上述研究结果为Si/SiO2界面材料的设计与应用提供了一定的理论依据．     

第一性原理研究厚度和空位缺陷对Si/SiO2界面电子结构与光学性质的影响

采用基于密度泛函理论的平面波超软赝势方法,在局域密度近似（ LDA）下研究了Si纳米层厚度和O空位缺陷对Si／SiO2界面电子结构及光学性质的影响．电子结构计算结果表明：在0.815～2.580nm的Si层厚度范围内, Si／SiO2界面结构的能隙随着厚度减小而逐渐增大,表现出明显的量子尺寸效应,这与实验以及其他理论计算结果一致;三种不同的O空位缺陷的存在均使得Si／SiO2界面能隙中出现了缺陷态,费米能级向高能量方向移动,且带隙有微弱增加．光学性质计算结果表明：随着Si纳米层厚度的减小, Si／SiO2界面吸收系数产生了蓝移; O空位缺陷引入后,界面光学性质的变化主要集中在低能区,即低能区的吸收系数和光电导率显著增加．可见,改变厚度和引入缺陷能够有效地调控Si／SiO2界面体系的电子和光学性质,上述研究结果为Si／SiO2界面材料的设计与应用提供了一定的理论依据．     

高压下ZnS的电子结构和性质

运用密度泛函理论体系下的平面波赝势(PWP)和广义梯度近似(GGA)方法，计算研究了闪锌矿结构的ZnS晶体在不同的外界压强下的电子结构. 通过分析发现，随着外界压强的增大，晶格常数和键长在不断缩小，从S原子向Zn原子转移的电荷越来越少，Zn—S键的共价性逐渐增强，Zn原子和S原子的态密度都有不同程度的变化，而且还有向低能量移动的趋势. 当外界压强达到24GPA时，ZnS从直接带隙半导体变成间接带隙半导体，而且随着压强的增大，间接带隙逐渐变小，直接带隙逐渐增大. 关键词： 闪锌矿结构 态密度 能带结构 密度泛函理论     

High pressure induced phase transformation of SiO2 and GeO2: difference and similarity

We report high pressure polymorphism of SiO₂ and GeO₂ at room and high temperatures. It was found that kinetics has a large effect on pressure induced phase transitions of SiO₂ and GeO₂. The high pressure behavior of SiO₂ and GeO₂ polymorphs depends on the starting material and pressure–temperature history. Our studies show that SiO₂ and GeO₂ have a common sequence of high pressure, high temperature structural transformations when the same type of starting material (amorphous or α-quartz) was used: (amorphous or α-quartz)⇒d-NiAs⇒rutile⇒CaCl₂⇒α-PbO₂⇒pyrite (Pa-3) types. In the case of cristobalite as starting material, the α-PbO₂-type phase can be synthesized directly from the high pressure room temperature phase omitting rutile- or CaCl₂-type structure. The crystallization of the d-NiAs phase in a narrow temperature interval 1000–1300 K can be used as an indicator of presence of a cation disordered network in both SiO₂ and GeO₂ materials at high pressure before heating.     

高压下BeP2N4结构相变和电子结构的第一性原理计算

 基于密度泛函理论的第一性原理方法,计算了硅铍石型和尖晶石型结构BeP₂N₄的总能量随体积的变化关系。利用Brich-Murnaghan状态方程,通过能量和体积拟合,得到了2种结构的体变模量及其对压强的一阶导数。在压力作用下,BeP₂N₄的相变是从硅铍石型结构（空间群R-3,No.148）转变到尖晶石型结构（空间群Fd-3m,No.227）,计算出的相变点与其它理论值符合得非常好。同时计算了BeP₂N₄的相对晶格常数a/a₀和相对体积V/V₀的压缩率,在低压下发现,尖晶石结构BeP₂N₄的压缩率接近金刚石,进一步计算了不同压力下的体弹模量B_H、剪切模量G_H、B_H/G_H和杨氏模量E。此外,对两种结构的BeP₂N₄的电子态密度和带隙随压强的变化关系进行了计算和分析。结果表明：在压力作用下,上价带顶向费米能级移动,并有一定的展宽。Be—N、P—N键缩短,电子转移增加,导致电荷发生重新分布。     

纳米SiO2形成柯石英的p-T相图

 使用纳米SiO₂粉体为原料,在2.0～4.2 GPa、150～1200 ℃范围内进行了一系列的高压高温实验研究,得到了该压力温度范围内晶化产物α-石英与柯石英的p-T相图,而且该相图中的相边界在650 ℃以下斜率为负,在650 ℃以上基本水平。通过X射线衍射仪（XRD）、Raman光谱仪（Raman）、傅立叶红外光谱仪（FT-IR）、DSC-TGA差热分析仪（TG-DTA）-等表征手段,发现纳米SiO₂原粉中水分（包含Si－OH和吸附水）的存在能显著降低合成柯石英的温度和时间,在4.2 GPa压力下得到了目前合成柯石英的最低温度190 ℃。常压下,合成的柯石英在800 ℃以下能够稳定存在,在1 000 ℃以上转化为α-方石英。     

二氧化硅纳米结构径向呼吸振动的理论研究

运用密度泛函理论的B3LYP方法,在6-31G(d)基组水平上,计算了由Si₂O₂二元环组成的准一维SiO₂纳米链及三元环(3MR)、四元环(4MR)、六元环(6MR)和八元环(8MR)组成的SiO₂纳米管的Raman振动光谱。从Raman光谱发现纳米链和纳米管的径向呼吸振动频率随链或管长的增加而频率移动相反,即分别发生红移和蓝移,但随着链和管趋于无限长频率趋近稳定值;同时,随着直径的增大,振动频率减小。在小尺寸时,由于结构内部的应力影响使频率移动更明显,进一步对键长和键角分析说明,结构应力的作用使频率随尺寸变化发生移动。     

X-ray spectroscopic investigation of the electronic structure of α-quartz and stishovite (SiO2)

The silicon K and L_2,3 X-ray emission bands of stishovite (tetragonal SiO₂, 6:4 co-ordination) are reported and discussed along with the corresponding emission bands of α-quartz (hexagonal SiO₂, 4:2 co-ordination). While the shapes of the Si K-emission bands of stishovite and α-quartz differ considerably, those of the Si L_2,3-emission bands are similar. The measured spectra are compared with theoretical band structure calculations, and good overall agreement is found.     

固态二氧化碳电子结构及性能的理论研究

采用基于赝势平面波理论的第一性原理计算方法,研究了9种结构的固态二氧化碳的结构和性质.经过结构的几何优化,得到α石英稳定结构晶格常数与他人的计算值基本一致.通过对平衡态能量的分析,我们得出β方石英(cristobalite)结构是能量最低的结构.这与文献的研究结果一致.对弹性性质的计算结果表明,除了超石英(stishovite)和立方黄铁矿(cubic-pyrite)结构之外,其他的结构都是弹性稳定的.利用基于Mulliken轨道重叠布居数的共价固体本征硬度计算方法,预测了各个结构的本征硬度值.结果表明, 关键词： 第一性原理计算 固态二氧化碳 电子结构 硬度     

Structural, electronic and optical properties of orthorhombic distorted perovskite TbMnO3

This paper calculates the structural parameters, electronic and optical properties of orthorhombic distorted perovskite-type TbMnO3 by first principles using density functional theory within the generalised gradient approximation. The calculated equilibrium lattice constants are in a reasonable agreement with theoretical and experimental data. The energy band structure, density of states and partial density of states of elements are obtained. Band structures show that TbMnO3 is an indirect band gap between the O 2p states and Mn 3d states, and the band gap is of 0.48 eV agreeing with experimental result. Furthermore, the optical properties, including the dielectric function, absorption coefficient, optical reflectivity, refractive index and energy loss spectrum are calculated and analysed, showing that the TbMnO3 is a promising dielectric material.     

A theoretical study for the band gap energies of the most common silica polymorphs

Although numerous theoretical studies are available for the band gap energies of distinct silica (SiO₂) polymorphs, some of the calculated results of these former studies still remain inconsistent and mostly disagree with the experimental data of the investigated polymorphs. To obtain more reasonable results, we have focused on the band gap energies of eleven different and more common silica polymorphs in this research by employing the self consistent charge (SCC) variant of the density functional based tight binding (DFTB) method. The surveyed eleven common silica polymorphs in this study are namely: α-quartz, β-quartz, α-tridymite, β-tridymite, α-cristobalite, β-cristobalite, α-moganite, β-moganite, stishovite, coesite, and keatite Our obtained band gap energy results for α-quartz and stishovite are undoubtedly reasonable when compared with the existing experimental data of these polymorphs. As well, the maximum band gap energy is found to be as 9.70 eV for the β-moganite polymorph, and the minimum band gap energy appears as 7.62 eV for the stishovite polymorph. Overall, the presently obtained results for the energy band gap of the considered silica polymorphs are satisfactory, and some of them are still waiting further experimental confirmation.     

Calculations of physical properties of pure and doped crystals: Ab initio and semi-empirical methods in application to YAlO3:Ce and TiO2

In this paper we demonstrate that two independent methods of calculations (DFT based ab initio and semi-empirical crystal field theory) can be used to form a complementary picture of the optical and electronic properties of the doped host and impurity ion. The crystals considered in the present paper are: (i) YAlO₃:Ce³⁺ and (ii) two dominant phases of TiO₂—rutile and anatase. As an example, detailed calculations of the band structure and crystal field energy level scheme of YAlO₃:Ce³⁺ are reported. From the analysis of the band structure and density of states, the character of the YAlO₃ energetic bands and positions of the Ce impurity energy levels were established. It was also shown how the ab initio methods can be used for calculations of the structural properties of solids under elevated pressure. Taking the two dominant phases of TiO₂ as an example, it was demonstrated how the elastic properties can be extracted from the calculated unit cell’s volume at different pressures. Particular attention was paid to the microscopic effects of crystal field, which were evidenced by the pressure-induced changes of the structure and shape of distribution of the Ti 3d electrons density of states. It was demonstrated how the difference in crystal structure of the anatase and rutile phases leads to remarkable difference in microscopic crystal field effects, which was explained by different Ti-O distances in both phases. In addition, the pressure dependence of the band gaps for anatase and rutile was investigated. It was shown that the hydrostatic pressure leads to the band gap narrowing in anatase and band gap widening in rutile, with pressure coefficients +0.00681 eV/GPa for rutile and −0.0088 eV/GPa for anatase.     

Electronic and optical properties of Fe<Subscript>2</Subscript>SiO<Subscript>4</Subscript> under pressure effect: ab initio study

We report first-principles studies the structural, electronic, and optical properties of the Fe₂SiO₄ fayalite in orthorhombic structure, including pressure dependence of structural parameters, band structures, density of states, and optical constants up to 30 GPa. The calculated results indicate that the linear compressibility along b axis is significantly higher than a and c axes, which is in agreement with earlier work. Meanwhile, the pressure dependence of the electronic band structure, density of states and partial density of states of Fe₂SiO₄ fayalite up to 30 GPa were presented. Moreover, the evolution of the dielectric function, absorption coefficient (α(ω)), reflectivity (R(ω)), and the real part of the refractive index (n(ω)) at high pressure are also presented.