高压下SiO_2的第一性原理计算

基于密度泛函理论(DFT)的第一性原理,采用Hartree-Fork(HF)方法,分别计算了Si O2的α-石英结构、金红石结构以及氯化钙结构的总能量随体积的变化关系。利用Murnaghan状态方程,通过能量和体积拟合,得到了3种结构的体变模量及其对压强的一阶导数。计算结果表明,随着压强的增加,Si O2会从α-石英结构转变为金红石结构,与实验结果和其它理论结果一致;金红石结构与氯化钙结构之间不存在相变,可以共存。此外,对具有α-石英结构的Si O2的晶格常数、电子态密度和带隙随压强的变化关系进行了计算和分析,结果表明:加压作用下,能带向高能方向移动,Si─O键缩短,电子数转移增加,带隙展宽,电荷发生重新分布。     

高压下ZnS的电子结构和性质

运用密度泛函理论体系下的平面波赝势(PWP)和广义梯度近似(GGA)方法，计算研究了闪锌矿结构的ZnS晶体在不同的外界压强下的电子结构. 通过分析发现，随着外界压强的增大，晶格常数和键长在不断缩小，从S原子向Zn原子转移的电荷越来越少，Zn—S键的共价性逐渐增强，Zn原子和S原子的态密度都有不同程度的变化，而且还有向低能量移动的趋势. 当外界压强达到24GPA时，ZnS从直接带隙半导体变成间接带隙半导体，而且随着压强的增大，间接带隙逐渐变小，直接带隙逐渐增大. 关键词： 闪锌矿结构 态密度 能带结构 密度泛函理论     

高压下LiF和NaF的结构稳定性及其电子和光学性质的第一性原理研究

基于密度泛函理论，采用全势线性缀加平面波加局域轨道方法，计算模拟了LiF高压下的相变行为，预测其在450GPa附近发生由NaCl结构(B1)到CsCl结构(B2)的结构相变.同时还计算了高压下LiF不同相的电学特性，LiF的复介电函数以及介电常数随压强变化关系.通过比较能带结构的变化行为，得出LiF在53GPa附近还存在等结构相变，即由直接带隙结构变为间接带隙结构.将LiF的计算结果与另外一个同构化合物NaF进行了比较讨论. 关键词： LiF 压致相变 从头计算     

GaN结构相变、电子结构和光学性质

运用第一性原理平面波赝势和广义梯度近似方法,对纤锌矿结构和氯化钠结构GaN的状态方程及其在高压下的相变进行计算研究,分析相变点附近的电子态密度、能带结构和光学性质的变化机制.通过状态方程和焓相等原理得到GaN从纤锌矿到氯化钠结构的相变压强分别为43.9 Gpa和46.0 Gpa;在相变的过程中,GaN由典型的直接带隙半导体转变为间接带隙半导体材料;氯化钠结构GaN相比于纤锌矿结构,介电函数主峰值增强,本征吸收边明显往高能方向移动,氯化钠结构GaN在低能区域的光学性质差于纤锌矿结构.     

高压下AlN的电子结构和光学性质

运用密度泛函理论体系下的平面波赝势(PWP)和广义梯度近似(GGA)方法，利用第一性原理计算了不同压强下六方纤锌矿结构AlN晶体的晶格常数、总能量、电子态密度、能带结构、光反射系数与吸收系数。通过比较能带结构的变化行为，得出 AlN在16.7Gpa附近存在等结构相变，即由直接带隙结构转变为间接带隙结构。同时，结合高压下的态密度分布图和能级移动情况，分析了AlN在高压下的光学性质，吸收谱有向高能端移动(蓝移) 的趋势。     

加压下ZnO结构相变和电子结构的第一性原理计算

基于密度泛函(DFT)理论的第一性原理,计算半导体ZnO纤锌矿结构和岩盐矿结构状态方程及其在高压下的相变,分析加压下体相ZnO的晶格常数、电子态密度和带隙随压力的变化关系,并将计算结果与文献中的理论和实验数据进行比较.验证在计算金属氧化物时,应用局域密度(LDA)近似计算出的相变压力普遍偏高,采用广义梯度(GGA)近似得到的结果与实验符合较好.     

高压下BaHfO3电子结构与光学性质的第一性原理研究

从第一性原理出发,在局域密度近似下,采用基于密度泛函理论的平面波超软赝势计算方法系统地研究了高压对BaHfO3电子结构与光学性质的影响．能带结构分析表明：无压强和施加正压强作用时,BaHfO3为直接带隙绝缘体,而施加负压强时,BaHfO3则转变为间接带隙半导体;BaHfO3的带隙随压强增加而减小,且具有明显的非线性关系．对光学性质的分析发现：施加正压强后,光学吸收带边产生蓝移;负压强作用时介电函数虚部尖峰减少,光学吸收带边产生红移;施加压强后BaHfO3的静态介电常数和静态折射率均增大．上述研究表明施加高压有效调制了BaHfO3的电子结构和光学性质,计算结果为BaHfO3光电材料的设计与应用提供了理论依据．     

固相硝基甲烷相变的第一性原理计算

研究极端条件下固相分子晶体含能材料的相变机理,对于人们认识固相含能材料的爆轰反应有着重要的意义.采用基于校正密度泛函理论的第一性原理方法研究固相硝基甲烷在静水压下的行为.分析晶格参数a,b和c轴随压强的变化,发现在1 GPa到12 GPa时晶格参数出现不连续的变化,表明体系发生相变.在相变时最大的二面角从155.3?增加到177.5?,二面角的增加限制CH3官能团自由旋转,使得C-N和C-H键的键长发生变化.在相变之前,体系主要存在由C-H···O组成的分子间的氢键,而在相变之后存在分子内的H···O和分子间C-H···O组成的氢键.此外通过对硝基甲烷体系的电子结构进行计算,发现相变会影响带隙随压强的变化,而且还会影响费米能级附近的态密度结构.     

SrS相变和弹性性质的第一原理计算

利用平面波赝势密度泛函方法和准谐德拜模型研究了SrS从NaCl结构到CsCl结构的相变以及弹性性质.在零温下,我们计算的相变压强为17.9 GPa,这与实验值和其他作者的计算值符合很好.研究还表明:相变压强随温度增加而非线性地增加,然而力学不稳性的压强随温度增加而线性地增加.     

高压下Zn2GeO4带隙变化的第一性原理研究

采用基于密度泛函理论的第一性原理计算研究了Zn₂GeO₄晶体在高压下的电子结构和带隙变化行为. 研究结果发现, 随着压强的增加, Zn₂GeO₄ 能带间隙先变大, 在压强为9.7 GPa时达到最大值, 然后减小. 通过电子态密度、电荷布居数和电子差分密度分布图的研究分析可知:在低压区域(0< P< 9.7 GPa), 带隙的变大主要是由于原子间距离的减小造成的共价性增强和Ge原子随压强的变大局域性增强引起的; 在高压区域(P>9.7 GPa), 则是出现了离域现象, 诱发了离域电子的产生, 从而使带隙减小.     

ZnSe相变、电子结构的第一性原理计算

基于第一性原理平面波赝势(PWP)和广义梯度近似(GGA)方法,对闪锌矿结构(ZB)和岩盐结构(RS)的ZnSe在0—20GPa高压下的几何结构、态密度、能带结构进行了计算研究,分析了闪锌矿结构ZnSe和岩盐结构ZnSe的几何结构.在此基础上,研究了ZnSe的结构相变、弹性常数、成键情况以及相变压强下电子结构的变化机理.结果发现:通过焓相等原理得到的ZB相到RS相的相变压强为15.3GPa,而由弹性常数判据得到的相变压强为11.52GPa,但在9.5GPa左右并没有发现简单立方相的出现;在结构相变过程中,sp3轨道杂化现象并未消除,Zn原子的4s电子在RS相ZnSe的导电性中起主要贡献.     

Phase transition,electronic and optical properties of III-Sb compounds under pressure

III-V semiconductors are the backbone of optoelectronic industry. Here, we have performed first principle calculations to investigate the structural, electronic and optical properties of III-Sb (III = B, Al, Ga, Sb) compounds under the effect of pressure. The structural phase transition from zincblende to rocksalt phases is determined by the common tangent of the two E–V curves. The obtained results are in good agreement with the available literature. Compounds make electronic transition from semiconductors to metals under pressure. The calculated band structure in zincblende structure was compared with experimental and theoretical findings. Optical properties including real and imaginary parts of the complex dielectric function, frequency-dependent reflectivity and optical conductivity are explained to characterize the optical nature of these compounds in both phases.     

Pressure dependence of elastic properties of wurtzite ZnO crystal

We present the pressure dependence of elastic properties of the wurtzite phase of ZnO undergoing wurtzite to the rocksalt phase transition. A simple Landau theory is developed to describe the structural phase transition between wurtzite to rocksalt phases observed in ZnO. We have defined the necessary order parameter of the wurtzite to the rocksalt phase transition. We present a detailed analysis of the pressure dependence of the elastic and shear constants of the wurtzite phase of ZnO. The theoretical predictions are in the line with experimental results.     

First-principles study of zinc-blende to rocksalt phase transition in BN

The structural, electronic and elastic properties of the cubic boron nitride (BN) compound are investigated by a first-principle pseudopotential method. The calculations show that the structural phase transition from the zinc-blende(ZB) structure to the rocksalt (RS) structure occurs at a transition pressure of 1088 GPa and with a volume reduction of 3.1%. Both the ZB and RS structures of BN have indirect gaps, with energy gaps of 4.80 eV and 2.11 eV, respectively. The positive pressure derivative of the indirect band gap (Γ-X) energy for the the ZB phase and the predicted ultrahigh metallization pressure are attributed to the absence of d occupations in the valence bands. The increase of the shear modulus with increasing pressure implies that the lattice stability becomes higher when BN is compressed.     

高压下AlN纳米线的介电性质

利用高压X射线衍射和高压原位电化学阻抗谱法研究了AlN纳米线的高压结构和电学性质.研究结果表明:AlN纳米线的电学参数均在22.6 GPa发生了突变,该突变与样品发生了从纤锌矿到岩盐矿的结构相变相关.岩盐相中晶格对电子的散射在电传导中起主导作用;不同于纤锌相中的长程传导,岩盐相中存在短程传导,且其作用随压力增加而增大;纤锌相的介电损耗峰在1Hz且不受压力影响;岩盐相的介电损耗峰随压力减小且向低频方向移动.本研究将为AlN及其相关材料的进一步研究和应用提供实验依据.     

Pressure-induced phase transition in wurtzite ZnS: An ab initio constant pressure study

We study the pressure-induced phase transition of wurtzite ZnS using a constant pressure ab initio technique. A first-order phase transition into a rocksalt state at 30–35 GPa is observed in the constant pressure simulation. We also investigate the stability of wurtzite (WZ) and zinc-blende (ZB) phases from energy–volume calculations and Gibbs free energies at zero temperature and find that both structures show nearly similar equations of state and transform into a rocksalt structure around 14 GPa, in agreement with experiments. Additionally, we examine the influence of pressure on the electronic structure of the wurtzite and zinc-blende ZnS crystals and find that their band gap energies exhibit similar tendency and increase with increasing pressure. The calculated pressure coefficients and deformation potential are found to be comparable with experiments.     

Structural, electronic and vibrational properties of InN under high pressure

The structural, electronic and vibrational properties of InN under pressures up to 20 GPa have been investigated using the pseudo-potential plane wave method (PP-PW). The generalized-gradient approximation (GGA) in the frame of density functional theory (DFT) approach has been adopted. It is found that the transition from wurtzite (B4) to rocksalt (B1) phase occurs at a pressure of approximately 12.7 GPa. In addition, a change from a direct to an indirect band gap is observed. The mechanism of these changes is discussed. The phonon frequencies and densities of states (DOS) are derived using the linear response approach and density functional perturbation theory (DFPT). The properties of phonons are described by the harmonic approximation method. Our results show that phonons play an important role in the mechanism of phase transition and in the instability of B4 (wurtzite) just before the pressure of transition. At zero pressure our data agree well with recently reported experimental results.     

Structural, electronic, and magnetic properties of CrN under high pressure

The structural,electronic and magnetic properties of CrN under high pressure are investigated by first-principles calculations.The antiferromagnetic orthorhombic structure is identified to be the preferred ground state structure.It possesses a bulk modulus of 252.8 GPa and the nonzero magnetic moment of 2.33 μ B per Cr ion,which agree well with the experimental results.CrN undergoes structural and magnetic transitions from an antiferromagnetic rocksalt structure to a non-magnetic Pnma phase at 132 GPa.Under compression,the magnetic moment of the Cr ion reduces rapidly near the equilibrium and phase transition point,and the distribution of the density of states is broadened,but the form of overlap between the orbitals of Cr d and N p remains unchanged.The broadening of the band induces spin flipping,which consequently results in the smaller magnetic moment of the Cr ion.     

Structure of nanocrystalline ZnO up to 85 GPa

The structure of nanocrystalline and bulk polycrystalline ZnO were examined up to 85 GPa and 50 GPa, respectively using synchrotron X-rays and diamond anvil cells at ambient conditions. The transition from the wurtzite to the rock salt phase in the nano-ZnO takes place at 10.5 GPa; this transition pressure is 1.5 GPa higher than in bulk ZnO. A large volume collapse of about 17.5% is observed during the transition in both systems. The rocksalt phase is stable and no structural transitions are observed for both compounds at higher pressures up to the experimental limit. On decompression the rocksalt phase is found to co-exist with the wurtzite phase at ambient conditions for the nano-ZnO.     

Ab initio calculations of yttrium nitride: structural and electronic properties

Using first principles total energy calculations within the full-potential linearized augmented plane wave method, we have studied the structural and electronic properties of yttrium nitride (YN) in the three phases, namely wurtzite, caesium chloride and rocksalt structures. The calculations are performed at zero and under hydrostatic pressure. In agreement with previous findings, it is found that the favored phase for YN is the rocksalt-like structure. We predict that at zero pressure YN in the rocksalt structure is a semiconductor with an indirect bandgap of 0.8 eV. A phase transition from a rocksalt to a caesium chloride structure is found to occur at ∼134 GPa. Besides, a transition from an indirect (Γ−X) bandgap semiconductor to a direct (X−X) one is predicted at pressure of ∼84 GPa. For the electron effective mass of rocksalt YN, these are the first results, to our knowledge. The information derived from the present study may be useful for the use of YN as an active layer in electronic devices such as diodes and transistors.