化学气相沉积法制备定向碳纳米管阵列

以二茂铁和二甲苯分别作为催化剂和碳源，采用一种无模板的化学气相沉积法，使用单温炉设备，成功地制备了高度定向的碳纳米管阵列.分别用扫描电子显微镜、透射电子显微镜和电子能量散射谱、拉曼光谱对碳纳米管阵列进行形貌观察和表征, 并研究了不同工艺参数对碳纳米管阵列形貌的影响.结果表明：在生长温度为800℃，催化剂浓度为0.02g/mL，抛光硅片上容易获得高质量的定向碳纳米管阵列，在此优化条件下生长的定向碳纳米管的平均生长速率可达25μm/min.     

基于HRTEM和Raman分析定向多壁碳纳米管阵列的生长机理

以二茂铁、二甲苯为前驱体,石英为衬底,在850 oC的管式炉内采用化学气相沉积法制备出了定向碳纳米管阵列. 高分辨透射电子显微镜和拉曼光谱的结果表明：碳纳米管阵列具有良好的定向性和多壁管状结构,石墨化程度高,并且只在表面存在少量单壁碳纳米管.定向多壁碳纳米管阵列的生长模式为“底部”生长模式,即在生长的初期,当催化剂颗粒较小时,析出的碳原子生成了单壁碳纳米管或与其性质类似的多壁碳纳米管(一般层数小于5层);催化剂颗粒逐渐长大后,大量的碳原子析出后生成了普通的多壁碳纳米管,从而形成了单壁碳纳米管只存在于碳纳米管阵列膜表面和多层碳纳米管膜表面与界面的现象.     

刻线镍膜上沉积的碳纳米管场发射特性

利用微波等离子体化学气相沉积(MWPCVD)方法,在刻线的镍膜上沉积碳纳米管膜。通过SEM和拉曼光谱表征,讨论了催化剂厚度、制备温度、反应时间以及甲烷浓度对碳纳米管场发射的影响。结果表明：不同条件下制备的碳纳米管的场发射性能有很大差异,保持氢气的流量(100sccm)不变,当甲烷流量为5sccm、生长时间为5min、催化剂膜厚为150nm、温度为700～800℃时,场发射性能最好,开启场强为1．3V／um,最大发射电流达到6．8mA／cm^3。     

快速生长超长定向碳纳米管阵列的制备及机理

 采用一种无模板的化学气相沉积法裂解金属有机物,以二茂铁为催化剂,二甲苯为碳源,利用单温炉加热装置在100 min内成功制备了2.7 mm超长定向碳纳米管阵列,生长速率高达27 μm·min^-1。运用扫描电子显微镜、透射电子显微镜、拉曼光谱对定向碳纳米管阵列进行形貌观察和表征,结果表明:制得的碳纳米管阵列具有优越的定向性和管结构,并且石墨化程度高。给出了快速生长超长定向碳纳米管阵列的优化制备条件,结合表征结果讨论了碳纳米管阵列的生长机制,认为超长碳纳米管阵列采用的是一种催化剂固定不动的开口生长方式,碳源和催化剂的连续供应保证了超长碳纳米管阵列的快速生长。     

碳纳米管负载Cu-Co复合氧化物的富氢气氛中CO催化消除

采用超声处理辅助浸渍法制备了多壁碳纳米管负载的Cu-Co复合氧化物催化剂. 利用XRD、TEM、H₂-TPR、XPS和Raman光谱等表征了催化剂的结构性质. 在Cu和Co氧化物以及金属氧化物与碳纳米管载体间存在强相互作用. 催化剂在富氢气氛中CO催化消除反应中,与单一Cu或Co催化剂相比,Cu-Co复合氧化物催化剂表现出独特的反应特性,特别是在较高反应温度下可同时结合CO优先氧化和CO甲烷化的反应途径来实现高效CO消除. 当Cu/Co比为1/8时活性最优,可以实现在150～250 o和高反应空速 (120 L/(h·g))富氢气氛中CO的完全消除.     

V型热解火焰合成碳纳米管的催化剂选择与分析

碳纳米管是一种新型碳材料.催化剂是碳纳米管制备中的重要影响因素,而燃烧法合成碳纳米管必须使用催化剂.本文利用V型热解火焰来研究碳纳米管的合成条件,主要在理论和实验两个方面分析研究了催化剂的作用、种类、颗粒大小、失活等方面对碳纳米管生长的影响,从而为V型热解火焰法合成碳纳米管时催化剂的选取提供依据.理论分析和实验结果表明: Fe(CO)5作为一种铁剂催化剂非常适合催化CO合成碳纳米管.利用碳的"溶解-扩散-析出"机理可以用来解释Fe(CO)5催化CO合成碳纳米管的过程.     

催化剂对碳纳米管产率及质量的影响

本文研究了添加钴/二茂铁、镍/二茂铁、钴、镍/钴不同催化剂对高温热解法制备碳纳米管质量、产率等的影响。高分辨率透射电镜图象显示在800℃左右,镍/二茂铁、钴/二茂铁和钴催化条件下,有多壁碳纳米管生成,而用镍/钴作催化剂时,只有直径在0 5μm左右,长度十几个微米的非晶态棒状物生成。通过对生成碳纳米管的质量和产量进行比较,催化剂的催化活性满足二茂铁>钴>镍。简单分析了在碳源高温热解环境下不同金属催化剂的性能差异,并对不同催化条件下生成物的拉曼光谱进行了分析。     

酞菁裂解法多壁碳纳米管的制备、表征和应用

为了探究高温处理酞菁钴对O2 的催化还原作用 ,以酞菁钴作为催化剂的前体 ,通过化学气相沉积的方法 ,在 85 0℃下 ,氩气与氢气混合气流中 ,制备了双层定向碳纳米管 ,纳米管的直径分布在 6 0～ 12 0nm ,长度约为4 0 μm ,在纳米碳管中包裹有直径为 10nm的钴颗粒 .所得产品用透射电子显微镜和扫描电子显微镜进行了观察 ,并用拉曼谱和X射线衍射对样品进行了表征 .通过循环伏安法测量得到纳米碳管对金属颗粒在酸性溶液中的腐蚀具有一定抵抗作用 .认为少量的N对于竹节状碳纳米管的形成和金属对酸的抵抗作用是十分必要的 ,每节中碳壁的弯曲弧度则与N在碳纳米管中含量和N与金属的相互作用有关 .另外 ,碳纳米管较大的电化学活性区域在电化学方面具有潜在的应用价值 .     

阵列碳纳米管的石墨化程度

采用化学气相沉积法制备了阵列碳纳米管薄膜,对阵列碳纳米管的石墨化程度进行了系统研究。利用扫描电子显微镜(SEM)、拉曼光谱(Raman)对样品形貌以及结构进行了表征。探讨了不同实验参数对阵列碳纳米管石墨化程度影响的机理。结果发现,在一定催化剂浓度范围内,催化剂浓度过低时,阵列碳纳米管的石墨化程度较差,而随着催化剂浓度的增加,阵列碳纳米管的石墨化程度逐渐变好;生长石墨化程度较好的阵列碳纳米管需要合适的进液速度,进液速度过低或过高都会使得碳纳米管的石墨化程度变差;此外,生长石墨化程度较好的阵列碳纳米管也需要合适的生长温度,生长温度过低或过高都会使得碳纳米管的石墨化程度变差。     

闭壳层金掺杂钛氧团簇阴离子解离氢分子研究（英文）

在气相条件下,研究金掺杂氧化物团簇与氢气分子的反应,可以从分子水平上理解加氢反应中金催化剂的作用.本文利用飞行时间质谱实验研究了闭壳层金掺杂钛氧化物团簇阴离子AuTi_3O_8和AuTi_3O_7活化解离氢气分子的反应.密度泛函理论计算结果表明,在AuTi_3O_8阴离子与氢气分子反应中,氢气活化是在过氧单元与金原子协同作用下实现的,这不同于此前普遍认为的晶格氧与金原子共同活化氢气分子机理.前线轨道分析进一步表明了过氧物种可以降低氢气解离过程中的能垒,这与凝聚相中的相关实验现象一致.     

生长参数对碳纳米管阵列制备的影响

利用化学气相沉积法在沉积铁纳米颗粒的硅衬底上制备了垂直方向高度有序的碳纳米管阵列．扫描电子显微镜的观测发现，碳纳米管阵列的形貌受到若干生长参数的影响，包括催化剂颗粒大小、反应温度和反应气体的分压等．研究发现，当反应温度升高，或反应气体中碳源气体含量增加时，碳纳米管变粗、变短．当催化剂薄膜的厚度减小时，碳纳米管的直径随之减小而纳米管阵列的高度则先增后减，有一个最大值．这些结果表明，碳纳米管的直径和阵列的高度可通过选择合适的反应温度、匀胶机转速和反应气比率来调节．     

The effects of hydrogen plasma pretreatment on the formation of vertically aligned carbon nanotubes

The effects of H₂ plasma pretreatment on the growth of vertically aligned carbon nanotubes (CNTs) by varying the flow rate of the precursor gas mixture during microwave plasma chemical vapor deposition (MPCVD) have been investigated in this study. Gas mixture of H₂ and CH₄ with a ratio of 9:1 was used as the precursor for synthesizing CNTs on Ni-coated TiN/Si(1 0 0) substrates. The structure and composition of Ni catalyst nanoparticles were investigated by using scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (XTEM). Results indicated that, by manipulating the morphology and density of the Ni catalyst nanoparticles via changing the flow rate of the precursor gas mixture, the vertically aligned CNTs could be effectively controlled. The Raman results also indicated that the intensity ratio of the G and D bands (I_D/I_G) is decreased with increasing gas flow rate. TEM results suggest H₂ plasma pretreatment can effectively reduce the amorphous carbon and carbonaceous particles and, thus, is playing a crucial role in modifying the obtained CNTs structures.     

Aligned growth and alignment mechanism of carbon nanotubes by hot filament chemical vapor deposition

Carbon nanotubes (CNTs) growth on Inconel sheets was carried out using hot filament chemical vapor deposition (HFCVD) in a gas mixture of methane and hydrogen. Scanning electron microscopy, transmission electron microscopy and field electron emission (FEE) measurement were applied to study the structure and FEE properties of the deposited CNTs. The effect of bias voltage and substrate surface roughness on the growth of vertically aligned carbon nanotubes was investigated. Well-aligned CNTs were synthesized by bias enhanced HFCVD. The results show that a bias of −500 V generates the best alignment. It has been observed that at the early growth stage, aligned and non-aligned CNTs are growing simultaneously on the unscratched sheets, whereas only aligned CNTs are growing on the scratched sheets. The results indicate that tip growth is not necessary for the electric field to align the CNTs, and larger catalyst particles created by scratching before the heat treatment can induce alignment of CNTs at the early growth stage. In addition, tree-like CNTs bundles grown on the scratched substrates exhibit better FEE performances than dense carbon nanotube forest grown on the unscratched substrates due to the reduced screen effect.     

银纳米粒子修饰三维碳纳米管阵列SERS实验

为了使表面增强拉曼散射(SERS)基底的三维聚焦体积内包含更多的“热点”,能吸附更多探针分子和金属纳米颗粒,以便获得更强的拉曼光谱信号,提出了银纳米粒子修饰垂直排列的碳纳米管阵列三维复合结构作为SERS基底,并对其进行了实验研究。利用化学气相沉积(CVD)方法制备了垂直排列的碳纳米管阵列;采用磁控溅射镀膜方法先在碳纳米管阵列上形成一层银膜,再通过设置不同的高温退火温度,使不同粒径的银纳米粒子沉积在垂直有序排列碳纳米管阵列的表面和外壁。SEM结果表明：在有序碳纳米管阵列的表面和外壁都均匀地负载了大量银纳米粒子,并且银纳米颗粒的粒径、形貌及颗粒间的间距随退火温度的不同而不同。采用罗丹明6G(R6G)分子作为探针分子,拉曼实验结果表明：R6G浓度越高,拉曼强度越强,但是R6G浓度的增加与拉曼强度增强并不呈线性变化;退火温度为450 ℃,银纳米颗粒平均粒径在100～120 nm左右,退火温度为400 ℃,银纳米颗粒平均粒径在70 nm左右,退火温度为450 ℃的拉曼信号强度优于退火温度400和350 ℃。     

Individuals, grasses, and forests of single- and multi-walled carbon nanotubes grown by supported Co catalysts of different nominal thicknesses

The relationships among the nominal thickness of Co catalyst, the structure of the catalyst particles, and the structure of carbon nanotubes (CNTs) growing from the catalyst during chemical vapor deposition were investigated. Various morphologies of CNTs such as individuals, random networks parallel to the surface of the substrate (‘grasses’), and vertically aligned forests of single- and multi-walled carbon nanotubes were grown by only varying the nominal thickness of catalyst under the same reaction condition. These different morphologies at the same growth time were due to the different areal density rather than to the length of CNTs. With increasing nominal thickness of catalyst, the catalyst particles changed in diameter while their areal density remained relatively almost constant. The change in diameter possibly affected the number ratio of active catalyst particles to the whole particles, which in turn affected the areal density of CNTs and yielded the various morphologies. Longer growth time increased the CNT length, which caused further change in CNT morphologies from individuals to grasses and grasses to forests.     

Electron emission studies of CNTs grown on Ti and Ni containing amorphous carbon nanocomposite films

Carbon nanotubes (CNTs) were grown successfully on the as-deposited dual metal (Ti and Ni) embedded films using a radio frequency plasma-enhanced chemical vapor deposition system. The microstructure of CNTs grown on the dual metal films proved to be heavily dependent on the percentages of metals included, varying both in size and in density. Electron emission tests carried out on the films with CNTs grown showed that the threshold field was dependent on the surface morphology of the CNTs, with the lowest threshold field at 3.5 V/μm from 2.5% Ti/Ni film with CNTs. The field enhancement factor, β, of the emitting tips was also calculated from the Fowler–Nordheim plots, where CNTs from the 2.5% Ti/Ni film gave the highest field enhancement factor. However, it was observed that films with a single metal of either Ti or Ni did not manage to grow CNTs, possibly due to a lack of catalyst centres at the surface of the films. It was believed that the Ni nanoclusters acted as catalysts centres giving a rather uniform but randomly orientated type of CNTs. Results obtained pointed that the fabricated nanocomposite material could be a possible choice for cold cathode emitters and the Ti/Ni mixture could be an effective composite for controlling the CNT density.     

Hot filament effects on CVD of carbon nanotubes

We grew vertically aligned CNTs via HFCVD using mixtures of methane and hydrogen as feedstock, and investigated the dependence of CNT growth on feedstock composition, filament temperature, and filament types. At the filament temperature of 2050 °C tungsten filaments were more efficient for CNT growth than tantalum ones, and higher CNT growth rates were observed when tungsten filaments were operated at 1900 °C. Regardless of filament temperatures and types, monotonic increase in growth rate of vertically aligned CNTs was observed as we increased the methane concentration in the feedstock. In‐situ investigation of feedstock dissociation revealed the generation of various radical species, and, moreover, a strong correlation between CNT growth rates and relative mole fractions of single‐carbon radicals. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

A High‐Performance Anode Material for Li‐Ion Batteries Based on a Vertically Aligned CNTs/NiCo2O4 Core/Shell Structure

3D vertically aligned carbon nanotubes (CNTs)/NiCo₂O₄ core/shell structures are successfully synthesized as binder‐free anode materials for Li‐ion batteries (LIBs) via a facile electrochemical deposition method followed by subsequent annealing in air. The vertically aligned CNTs/NiCo₂O₄ core/shell structures are used as binder‐free anode materials for LIBs and exhibit high and stable reversible capacity (1147.6 mAhg^?1 at 100 mAg^?1), excellent rate capability (712.9 mAh g^?1 at 1000 mAg^?1), and good cycle stability (no capacity fading over 200 cycles). The improved performance of these LIBs is attributed to the unique 3D vertically aligned CNTs/NiCo₂O₄ core/shell structures, which support high electron conductivity, fast ion/electron transport in the electrode and at the electrolyte/electrode interface, and accommodate the volume change during cycling. Furthermore, the synthetic strategy presented can be easily extended to fabricate other metal oxides with a controlled core/shell structure, which may be a promising electrode material for high‐performance LIBs.     

Position-selective growth of vertically aligned carbon nanotubes for application of electronic-measuring nanoprobes

Position-selective growth of carbon nanotubes (CNTs) and vertically aligned CNTs (VACNTs) on patterned metal electrodes have been prepared by thermal chemical vapor deposition (TCVD) and DC plasma enhanced chemical vapor deposition (PECVD). We propose newly a position-controlling method of CNTs by controlling not only a position of Ni as catalysts but also the morphology of Mo as underlayers for the catalysts. The position-selective growth of CNTs was achieved at the edges of the patterned metal by TCVD. The morphologies of the Mo underlayer at the selected area were rough and porous. No CNTs grew on smooth Mo surfaces. The minimum width of selectively grown CNTs, ca. 2.6 μm, was approximately one-eightieth of the patterned metal, 200 μm. VACNTs were synthesized by a PECVD method, however, the VACNTs grew up all over the patterned metal. The Ni catalysts formed into fine particles on rough surfaces of the Mo underlayer. Then the selective growth was achieved by Ni fine particles formed only at the edges of the metal pattern. The results of PECVD suggest that the plasma promoted the Ni catalysts to become fine particles on smooth surfaces of Mo. Conclusively a position-controlling method of CNTs was demonstrated in the optimum conditions of the TCVD.     

Thermal resistance of CNTs-based thermal interface material for high power solid state device packages

Vertically aligned carbon nanotubes (VACNTs) were synthesized over copper substrate. The diameter and length of the CNTs were 100 nm and 2–3 μm, respectively. Synthesis of CNTs was confirmed by Raman spectrum and verified by TEM as multi walled CNTs. SEM images showed the vertically aligned CNTs over Cu substrate. Strengthening of CNTs was performed by filling with Cu and SU-8 epoxy sealant in gap between the CNTs. The observed density was high for epoxy sealed CNTs. The bending ability of CNTs was checked and observed as low for epoxy sealed CNTs. The thermal resistance of the samples was measured by JESD51-2 standard for various loads. The observed resistance was low (0.277 cm²?K/W) for epoxy sealed CNTs at 1100 kPa. The calculated resistance of CNTs alone was 0.097 cm²?K/W for epoxy sealed at 900 kPa.