The effects of deep trap population on the thermoluminescence of Al2O3:C

The influence of deep traps on the 450 K thermoluminescence (TL) peak of Al₂O₃:C is studied. Depending upon the sample and on the degree of deep trap filling, features such as the TL width, area and height can vary considerably. These effects are interpreted to be due to: (a) sensitivity changes introduced by competition mechanisms involving deep electron and hole traps, and (b) the multiple component nature of the 450 K TL peak. The influence of the deep traps on the TL was studied using different excitation sources (beta irradiation or UV illumination), and step annealing procedures. Optical absorption measurements were used to monitor the concentration of F- and F⁺-centers. The data lead to the suggestion that the competing deep traps which become unstable at 800–875 K are hole traps, and that the competing deep traps which become unstable at 1100–1200 K are electron traps. Both the dose response of the TL signal and the TL sensitivity are shown to be influenced by sensitization and desensitization processes caused by the filling of deep electron and hole traps, respectively. Changes in the TL peak at low doses were also shown to be connected to the degree of filling of deep traps, emphasizing the influence of deep trap concentration and dose history of each sample in determining the TL properties of the material. Implications of these results for the optically stimulated luminescence properties are also discussed.     

The influence of electron–phonon interaction on the OSL decay curve shape

The significance of the electron–phonon interaction for optically stimulated luminescence (OSL) process in quartz is demonstrated. OSL variation with temperature has been investigated for four samples of natural quartz. Changes of the OSL decay rate have been observed for all components of the OSL signal. The scale and tendency of these changes are comparable with outcomes of computer simulations carried out for the model composed of two deep electron traps, one shallow trap and one recombination centre, taking into account the electron–phonon interactions.     

White light-emitting diodes for optical stimulation of aluminium oxide in OSL dosimetry

The results of comparative investigations into the optically stimulated luminescence (OSL) of anion-defective corundum excited by radiation of blue and white light-emitting diodes (LEDs) are reported. The continuous-wave OSL (CW-OSL) measurements showed that the white LED (compared to the blue LED) and the chosen geometry allow the amplitude of the OSL response to increase by a factor of more than 40 and the dosimetric information readout time to decrease by a factor of 20.The effect of deep traps on the behavior of the CW-OSL curves of anion-defective corundum was studied. It was found that the filling of deep traps essentially increases the TL yield with a dosimetric peak at 450 K and the CW-OSL-yield under stimulation with blue and white LEDs. It was also found that this filling causes a considerable change in the shape of the OSL curve and the time parameters of the decay.     

Features of OSL and TL properties of anion-defective corundum crystals exposed to thermo-optical treatment

The results of systematic investigation of the mechanisms and role of phototransfer in TL and OSL processes in α-Al₂O_3−δ crystals under controlled filling of the main and deep traps depleted at 450 and 720 K, respectively, are presented.Optical depletion spectra of the main and deep traps were measured and compared. It was found that green light stimulation only depletes the main trap, while blue light depletes both the main and deep traps. Optical depletion of the deep trap results in phototransfer of charges that can be realized by 2 mechanisms: either through the main trap to recombination centers or directly to the latter. However, the dominant contribution to the OSL signal is provided by phototransfer through the main trap. It is also found that UV emission at 3.7 eV dominates over F-emission at 3.0 eV in the phototransferred TL spectrum. It is assumed that this UV emission is not related to the F⁺ centers.     

TL, OSL, and phototransferred TL in beta-irradiated anion-defective Al2O3

The behavior of TL, OSL and PTTL under thermal and/or optical stimulation in beta-irradiated -Al₂O₃ was investigated. The noticeable change of the shape of the main TL peak after thermal or optical stimulation clearly shows that this peak is related to at least two traps. The OSL curves recorded after preheating up to a given increased end temperatures are described by two exponential decays curves. The first one is associated to the decay of the traps responsible for the main TL peak. The second exponential is related with the phototransfer from the deep to the main traps. A simple model of the OSL process, based on simultaneous refilling of shallow traps and their reverse filling due to phototransfer from deep traps, under illumination with light is proposed. The model describes well the obtained experimental data.     

Natural and laboratory OSL growth curve–Verification of the basic assumption of luminescence dating

The basic assumption of luminescence dating is the equality between the growth curve of OSL generated by the natural radiation and the OSL growth curve reconstructed in laboratory conditions. The dose rates that generate the OSL in nature and in laboratory experiments differ by about ten orders of magnitude. Recently some discrepancies between the natural and laboratory growth curves have been observed. It is important to establish their reasons in order to introduce appropriate correction into the OSL dating protocol or to find a test that allows to eliminate the samples which should not be used for dating. For this purpose, both growth curves, natural and laboratory, were reconstructed by means of computer simulations of the processes occurring in the sample during its deposition time in environment as well as those which occur in a laboratory during dating procedure. The simulations were carried out for three models including one shallow trap, two OSL traps, one disconnected deep and one luminescence center. The OSL model for quartz can be more complex than the one used in the presented simulations, but in spite of that the results show effects of growth curves discrepancies similar to those observed in experiments. It is clear that the consistency of growth curves is not a general feature of the OSL processes, but rather a result of an advantageous configuration of trap parameters. The deep disconnected traps play the key role and their complete filling before the zeroing of OSL signal is a necessary condition of the growth curves' consistency.     

LiMgPO_4:Tm,Tb的热释光和光释光陷阱参数

采用高温固相法合成了LiMgPO_4:Tm,Tb粉末样品,测定了热释光陷阱参数激发能E和频率因子s.用脉冲退火和多次退火方法研究了其光释光陷阱参数E和s,并与用多速法得到的热释光的结果进行了比较.对不同β射线剂量照射的样品发光曲线的研究表明,300°C高温峰属于一级动力学发光峰.通过对热释光和光释光陷阱的相关性研究表明,经200°C预热的热释光信号(对应于300°C高温峰)和光释光信号很有可能来自于同一深度的陷阱.     

Superlinear dose response of thermoluminescence (TL) and optically stimulated luminescence (OSL) signals in luminescence materials: An analytical approach

The phenomenon of superlinear dose response of thermoluminescence (TL) and optically stimulated luminescence (OSL) signals has been reported for several important dosimetric materials. We develop new analytical equations for the filling of traps and centers during irradiation and for the read-out stage of annealed luminescence materials, within the context of a two-trap and two-center model. The equations are applicable for both TL and OSL signals in annealed dosimetric materials, and are derived under the assumptions of low irradiation doses and dominant strong retrapping (weak recombination) processes. For low doses all traps and centers display linear dose response, which leads to quadratic dose response of the integrated TL/OSL signals. A new analytical expression is presented for this well-known quadratic dose dependence, in terms of the kinetic parameters in the model. The effect of elevated irradiation temperature on the integrated TL/OSL signals is also considered, and analytical expressions are obtained for this situation as well. A new type of dose-rate effect is reported based on the modeling results, which is due to irradiation during elevated temperatures. The accuracy of the analytical expressions is verified by comparing with the results of numerical simulations.     

化学增感对光电子时间分辨谱的影响

利用微波吸收相敏检测技术,对AgBrI-T颗粒乳剂中光电子时间行为进行了检测,并获得了自由光电子与浅束缚光电子的时间分辨谱。实验结果表明,在加入Na₂S₂O₃相同的条件下S与S+Au增感中心所起的电子陷阱作用不同,S增感中心所起的作用为深电子陷阱,增感中心由于增加了对光电子的深束缚,从而造成自由光电子与浅束缚光电子的衰减加剧;S+Au增感中心所起的作用为浅电子陷阱,增感中心通过暂时束缚光电子有效降低了光电子与光空穴的复合,减缓了自由光电子与浅束缚光电子的衰减,可见加入KAuCl₄后形成的S+Au增感中心陷阱深度要比S增感中心的陷阱深度浅。从光电子时间分辨谱的变化可以看出S与S+Au增感中心在衰减曲线的不同时域中对光电子衰减的作用表现不同。     

Characteristics of LM-OSL from several different types of quartz

We present Linear-Modulation OSL (LM-OSL) curves from several different types of quartz, including sedimentary quartz, bulk rock crystal and synthetic quartz. The LM-OSL method consists of linearly increasing the intensity of the stimulation light while continuously monitoring the OSL emission from the sample. With this technique, one obtains peaks of luminescence intensity versus time (Bulur, 1996) in which the position of the peak is inversely related to the photoionization cross-section of the trap. The shape of the LM-OSL curve is directly related to the shape of the conventional OSL decay curve in which the stimulating light source is maintained at constant intensity (so-called Continuous-Wave OSL, or CW-OSL). In the latter, the OSL from the traps with the highest photoionization cross-section decays most rapidly with stimulation time, while OSL from those traps with smaller photoionization cross-sections is characterized by longer decay times. In this paper, data are presented comparing the CW-OSL and LM-OSL curves for several different quartz types with particular focus on the changes in the shapes of each of these curves with sample type pre-heat temperature, and measurement temperature. Several different LM-OSL components are found for each sample, each with different photoionization cross-sections, but a universal behavior for quartz is not observed; each sample is different. From the dependence upon pre-heat temperature, features associated with shallow traps can be identified. Traps which empty very rapidly can be observed more easily in the LM-OSL curves than in the conventional CW-OSL curves, and the temperature dependence of the photoionization cross-section for the various components can be clearly discerned.     

An algorithm for unified analysis on the thermoluminescence glow curve

An algorithm was developed to integrally handle excitation by radiation, relaxation and luminescence by thermal or optical stimulation in thermoluminescence (TL) and optically stimulated luminescence (OSL) processes. This algorithm reflects the mutual interaction between traps through a conduction band. Electrons and holes are created by radiation in the beginning, and these electrons move to the trap through the conduction band. These holes move to the recombination center through a valence band. The ratio of the electrons allocated to each trap differs with the recombination probability and these values also relevant to the process of luminescence. Accordingly, the glow curve can be interpreted by taking the rate of electron–hole pairs created by ionizing radiation as a unique initial condition. This method differs from the conventional method of interpreting the measured glow curve with the initial electron concentration allocated to each trap at the end of irradiation. A program using the Visual Studio's C# subsystem was made to realize such a developed algorithm. To verify this algorithm it was applied to LiF:Mg,Cu,Si. The TL glow curve was deconvoluted with a model of five traps, one deep trap and one recombination center (RC).     

Monte Carlo simulations of TL and OSL in nanodosimetric materials and feldspars

The study of luminescent materials consisting of nanoclusters is an increasingly active research area. It has been shown that the physical properties of such nanodosimetric materials can be very different from those of similar conventional microcrystalline phosphors. In addition, it has been suggested that traditional energy band models may not be applicable for some of these nanodosimetric materials, because of the existence of strong spatial correlations between traps and recombination centers. The properties of such spatially correlated materials have been previously simulated by using Monte Carlo techniques and by considering the allowed transitions of charge carriers between the conduction band, electron traps and recombination centers. This previous research demonstrated successfully the effect of trap clustering on the kinetics of charge carriers in a solid, and showed that trap clustering can significantly change the observed luminescence properties. This paper presents a simplified method of carrying out Monte Carlo simulations for thermoluminescence (TL) and optically stimulated luminescence (OSL) phenomena, based on a recently published model for feldspar. This model is based on tunneling recombination processes involving localized near-neighbor transitions. The simulations show that the presence of small clusters consisting of a few traps can lead to multiple peaks in both the TL and linearly modulated OSL signals. The effects of donor charge density, initial trap filling and cluster size are simulated for such multi-peak luminescence signals, and insight is obtained into the mechanism producing these peaks.     

S+Au增感中心的电子陷阱效应对光电子行为的影响

利用微波吸收相敏检测技术，对AgBrI-T颗粒乳剂中自由光电子与浅束缚光电子时间行为进行了检测，结果表明在一级衰减曲线的不同区域中增感中心对光电子衰减的作用表现不同；S+Au增感中心的电子陷阱效应随浓度的增加发生了由浅电子陷阱到深电子陷阱的转变.根据增感浓度与光电子衰减时间的对应关系，获得了S+Au最佳增感浓度. 关键词： 微波相敏检测 光电子 增感 电子陷阱     

Influence of pre-measurement thermal treatment on OSL of synthetic quartz measured at room temperature

Much effort has been made to study the influence of pre-measurement thermal treatment and ionizing radiation on quartz specimens owing to its use in a large number of applications. Optically stimulated luminescence (OSL) being a structured and sensitive phenomenon promises to correlate the responsible color center and luminescence emission. OSL studies on quartz with such conditions can reveal many significant results.The aim of the present investigation is to understand the effect of annealing temperature on OSL characteristics of synthetic quartz recorded at room temperature. At identical annealing duration and β-dose, the shape of OSL decay curve remains non-exponential; when specimens annealed at lower temperature (∼400 °C). The shape of decay curve changes to exponential in nature along with rise in OSL intensity when the specimen was given higher temperature of annealing (>400 °C). The effects of such protocol on pattern of OSL sensitivity as well as area under the OSL decay curve are also presented here. The presence of shallow traps, when OSL decay curve was recorded at room temperature seems to be responsible for the changes in OSL pattern. The influence of shallow traps is attributed to non-exponential decay of OSL recorded at room temperature.     

Monte Carlo simulations of luminescence processes under quasi-equilibrium (QE) conditions

Previous researchers have carried out Monte Carlo simulations of thermoluminescence (TL) phenomena by considering the allowed transitions of charge carriers between the conduction band, electron traps and recombination centers. Such simulations have demonstrated successfully the effect of trap clustering on the kinetics of charge carriers in a solid, and showed that trap clustering can significantly change the observed luminescence properties. While such Monte Carlo simulations have been carried out for TL, there has been no such trap clustering studies for optically stimulated luminescence phenomena (OSL). This paper presents a simplified method of carrying out Monte Carlo simulations for TL and linearly modulated optically stimulated luminescence (LM-OSL) phenomena, based on the General One Trap (GOT) model, which is a special case of the one trap one recombination center model (OTOR) when quasi-equilibrium conditions (QE) hold. The simulated results show that the presence of small clusters consisting of a few traps in a solid can lead to multiple peaks in both the TL and LM-OSL signals. The effects of retrapping and degree of trap filling are simulated for such multi-peak luminescence signals, and insight is obtained into the mechanism producing these peaks. The method presented in this paper can be easily generalized for other types of luminescence solids in which the recombination probability varies with time.     

Untersuchungen über Elektronenhaftstellen in ZnS-Phosphoren

Glow curves of different ZnS phosphors were measured and analysed in the temperature region from 4.2 °K to 500 °K. It was attempted to clarify the origin of the glowpeaks observed above 77.4 °K and to attribute them to structural defects in the ZnS lattice. In glow curves started at 4.2 °K a strong dependence of the trap distribution on the method of preparation of phosphors was observed. In particular a ZnS(Cu) phosphor containing oxygen shows a broad continuum of shallow traps between 4.2 °K and 150 °K. In a ZnS(Cu, Ga) phosphor free of oxygen the trap density of the continuum of shallow traps is very small. Moreover this phosphor shows a sharp glowpeak at about 60 °K. The afterglow at the excitation temperatures of 4.2 °K and 77.4 °K was also studied. It is concluded that the rapid amptying of shallow and, to a lesser extent, of deep traps should be due to a tunneling process leading to luminous recombination of the trapped electrons with the activator levels.     

Modelling the thermal bleaching of OSL signal in the case of a competition between recombination centres

The thermal bleaching of the optically stimulated luminescence (OSL) has been investigated by computer simulations for a model including three traps and two luminescence centres. The deepest trap is active only during the OSL process. Two other traps are active only during the thermal bleaching. The thermal bleaching effects on the OSL intensity as well as on the OSL curve shape are presented for the wide range of trap and luminescence centre parameters and for the different settings of optical detection window. The conventional OSL curve analysis consisting in decomposition of the OSL curve into first order components is applied to the simulation results and the optical cross section spectra obtained as a result of this analysis are compared with the model assumptions. The simulations show that OSL signal can decrease to undetectable level even when the traps related to this signal are not emptied during thermal bleaching. The residual level of the OSL signal after bleaching process, however, depends strongly on centre parameters and concentrations. The modifications of optical detection spectral window lead to significant changes of bleaching effects. The thermal bleaching influences also the optical cross section spectra obtained as a result of the OSL curve decomposition.     

Dose-dependent optically stimulated luminescence of synthetic quartz at room temperature

Physical conditions such as annealing temperature, duration of annealing, ionizing radiation, etc., play a significant role in the applications of optically stimulated luminescence (OSL) dating as well as OSL dosimetry. Many efforts are made to understand the effect of these physical parameters on quartz specimens owing to its use in such applications. Such factors induce changes in OSL decay pattern. The definite correlation between color centers and luminescence sensitivity can be established on account of such pre-treatments to the specimen.The purpose of present investigations is to study the effect of ionizing radiation under identical physical conditions on OSL properties measured at room temperature. The shapes of decay curve and dose-response data are considered for this purpose. This study can reveal the changes in color centers in response to the pre-conditions to the specimen. It was found that the OSL decay remains slow and OSL properties change systematically with the rise in beta dose up to a critical dose; however, it changes the pattern when the beta exposure to the specimen was increased higher than the critical dose. This critical dose was found to be different for different temperature of annealing. The shape of decay curve up to the critical dose was also studied by considering the difference of OSL intensities between two successive durations from the observed OSL decay data. The results are explained based on the changes in available shallow traps during OSL measurement at room temperature with changes in pre-conditions to the specimens. The results also have been confirmed with the corresponding changes in ESR signals.     

Comparison between blue and green stimulated luminescence of Al2O3:C

This paper presents a systematic comparison of OSL signals from Al₂O₃:C when stimulated with blue and green light. Al₂O₃:C detectors were irradiated with various doses and submitted to various bleaching regimes using yellow, green and blue light. Most of the investigations were carried out using Luxel?-type detectors used in the commercial Luxel? and InLight? dosimetry systems (Landauer Inc.). Al₂O₃:C single crystals and Al₂O₃:C powder were also used to complement the investigations. The results show that, although blue stimulation provides faster readout times (OSL curves that decayed faster) and higher initial OSL intensity than green stimulation, blue stimulation introduced complicating factors. These include incomplete bleaching of the dosimetric trap when the Al₂O₃:C detectors are bleached with yellow or green light and the OSL is recorded with blue light stimulation, and an increased residual level due to stimulation of charge carriers from deep traps. The results warrant caution when using blue stimulation to measure the OSL signal from Al₂O₃:C detectors, particularly if the doses involved are low and the detectors have been previously exposed to high doses.     

Haftstellenerzeugung und Leuchtmechanismus bei den Wolframat-Phosphoren

Thermoluminescence investigations of several tungstate and molybdate phosphors, excited by UV-, cathode- und X-rays, show that cathode- and X-rays are able to produce electron traps in the centres. Thus, after irradiation an amplification of the UV-light sum can be observed, and the form of the glow curves differs considerably after the various excitations. Theoretical conceptions about the trap production are confirmed quantitatively by measuring the variation of the light sum with irradiation time at various kinds of excitation. However, the produced traps influence the simple exponential decay after UV-excitation and lead to the appearance of a second exponential relation in the decay curve. These decay measurements can also be verified by theoretical considerations about the kinetics of possible transitions. It is supposed that the traps, which can be healed by annealing, are situated in the electron configuration of the tungstate complex; a model for the luminescence centre is discussed.