Enhancement of electron–ion recombination rates at low energy range in the heavy ion storage ring CSRm

Recombination of Ar¹⁴⁺, Ar¹⁵⁺, Ca¹⁶⁺, and Ni¹⁹⁺ ions with electrons has been investigated at low energy range based on the merged-beam method at the main cooler storage ring CSRm in the Institute of Modern Physics, Lanzhou,China. For each ion, the absolute recombination rate coefficients have been measured with electron–ion collision energies from 0 meV to 1000 meV which include the radiative recombination(RR) and also dielectronic recombination(DR)processes. In order to interpret the measured results, RR cross sections were obtained from a modified version of the semiclassical Bethe and Salpeter formula for hydrogenic ions. DR cross sections were calculated by a relativistic configuration interaction method using the flexible atomic code(FAC) and AUTOSTRUCTURE code in this energy range. The calculated RR + DR rate coefficients show a good agreement with the measured value at the collision energy above 100 meV.However, large discrepancies have been found at low energy range especially below 10 meV, and the experimental results show a strong enhancement relative to the theoretical RR rate coefficients. For the electron–ion collision energy below 1 meV, it was found that the experimentally observed recombination rates are higher than the theoretically predicted and fitted rates by a factor of 1.5 to 3.9. The strong dependence of RR rate coefficient enhancement on the charge state of the ions has been found with the scaling rule of q^3.0, reproducing the low-energy recombination enhancement effects found in other previous experiments.     

快重离子辐照对MoS2热导率的影响研究

利用0.97 GeV的209Bi离子辐照二硫化钼（MoS₂）晶体,辐照注量范围为1×1010～1×1012 ions/cm2,结合原子力显微镜（AFM）观测和Raman光谱分析研究了快重离子辐照对MoS₂热导率的影响。实验结果显示,快重离子辐照在MoS₂中产生了潜径迹,较高激光功率下的Raman测试使样品局部温度升高,导致E_1/2g和A_1g峰随注量增加向低波数方向移动,且峰形展宽。引入了通过改变激光功率测量Raman光谱得到MoS₂热导率的计算方法,获得了不同辐照注量下MoS₂的热导率的定量分析结果,随注量增加,热导率不断降低,从未辐照样品的563 W/mK下降到1×1012 ions/cm2辐照时的132 W/mK。Molybdenum disulphide (MoS₂) was irradiated by 0.97 GeV 209Bi ions with the fluence of 1×1010 to 1×1012 ions/cm2. The irradiation effect on the thermal conductivity of MoS₂ was analyzed by atomic force microscope (AFM) and Raman spectroscopy. The experimental results show that hillock-like latent tracks are observed on irradiated MoS₂ by AFM. The measurement of MoS₂ by Raman spectrometer with high laser power results in the increase of local temperature of MoS₂, which cause the downshift of peaks position and broadening of E_1/2g and A_1g peak. Furthermore, according to Raman spectra measured at different laser power, thermal conductivity of MoS₂ before and after irradiation was calculated, which show that the thermal conductivity of MoS₂ decreases with increasing fluence, from 563 to 132 W/mK for pristine and 1×1012 ions/cm2 irradiated MoS₂, respectively.     

铜原子单激发态3d104p 2P1/2的光电离(英文)

铜原子能级结构的理论计算具有非常大的挑战性。本文基于多组态Dirac-Hartree-Fock（MCDHF）方法和相对论组态相互作用（RCI）方法,通过三个大规模的关联模型计算了单激发态3d104p 2P_1/2、双激发态3d94s（3D）5s4D_3/2,1/2,3d94s（3D）5s 2D_3/2,3d94s（1D）5s 2D_3/2以及离子态3d10 1S₀能级和波函数。结果表明,铜原子能级结构对有限组态空间的选择极其敏感,双激发态3d94s（3D）5s 4D_3/2,1/2,3d94s（3D）5s 2D_3/2,3d94s（1D）5s 2D_3/2和离子态3d10 1S₀与单激发态之间的能量差相对于已有实验结果均存在大约-0.4 eV的偏差,而计算得到的共振电子能量与实验结果符合得较好。此外,根据辐射跃迁矩阵元和非辐射跃迁矩阵元计算了双激发态的Fano参数q,并基于Fano理论得到了铜单激发态3d104p 2P_1/2的总光电离截面,该理论考虑了直接光电离与光激发自电离之间的干涉效应,即共振3d94s（3D）5s 4D_3/2,1/2、3d94s（3D）5s 2D_3/2和3d94s（1D）5s 2D_3/2具有明显的非对称的Fano轮廓,表明光电离过程与光激发自电离过程之间的干涉对双激发态共振附近的光电离截面轮廓有着极其重要的影响。     

Low energy range dielectronic recombination of Fluorine-like Fe~(17+) at the CSRm

The accuracy of dielectronic recombination(DR) data for astrophysics related ions plays a key role in astrophysical plasma modeling. The absolute DR rate coefficient of Fe~(17+) ions was measured at the main cooler storage ring at the Institute of Modern Physics, Lanzhou, China. The experimental electron-ion collision energy range covers the first Rydberg series up to n= 24 for the DR resonances associated with the ~2 P_(1/2)→~2 P_(3/2)△n =0 core excitations. A theoretical calculation was performed by using FAC code and compared with the measured DR rate coefficient. Overall reasonable agreement was found between the experimental results and calculations.Moreover, the plasma rate coefficient was deduced from the experimental DR rate coefficient and compared with the available results from the literature. At the low energy range, significant discrepancies were found, and the measured resonances challenge state-of-the-art theory at low collision energies.     

Re30+离子双电子复合速率系数的理论研究

复杂结构离子的双电子复合速率系数在极紫外光刻光源、核聚变等应用研究的等离子体光谱模拟和诊断中具有重要的应用价值。利用全相对论组态相互作用方法,详细计算了基组态为4p64d9的Re30+离子经双激发态（4p64d9）-1nln'l'（n=4~6,n'=4~23）的双电子复合（DR）过程。研究分析了激发、辐射通道,组态相互作用,级联退激对DR速率系数的影响。其中内壳层4p电子激发的DR速率系数是总DR速率系数的28.2%~44.9%,所以内壳层4p电子激发的贡献不可以忽略。级联退激对DR速率系数的最大贡献为12.9%,也必须要予以考虑。通过对双电子复合、辐射复合、以及三体复合速率系数的比较,辐射复合速率系数的最大值为DR速率系数的22.6%,三体复合速率系数的最大值仅为DR速率系数的0.3%。因此,DR速率系数远远大于辐射复合和三体复合速率系数。该结果表明DR过程对于等离子体离化态分布、能级布居以及光谱模拟都极为重要。为了方便应用,对基态和第一激发态的总DR速率系数进行了参数拟合。该研究结果将为Re激光等离子体的光谱模拟及复杂结构离子DR过程的进一步研究提供参考。Dielectronic recombination (DR) rate coefficients of complex ions are very important in some application research, such as extreme ultraviolet lithography and nuclear fusion. Based on the fully relativistic configuration interaction method, theoretical calculations are carried out to research the DR processes, in which Re30+ ions in the ground state 4p64d9 to (4p64d9)-1nln'l'(n=4~6, n'=4~23). Influence of excitation and radiation channels, configuration interaction, the effect of decays to autoionizing levels possibly followed by radiative cascades (DAC) are analyzed. The contributions through 4p subshell excitations to the total rate coefficient are 28.2%~44.9% in the whole temperature region. Hence the contributions from inner-shell electron excitation are very important. The contributions from the DAC transitions increase smoothly with the increasing temperature and are about 12.9% at 50 000 eV. The contributions of DAC can not be neglected. By means of compared total DR rate coefficients to radiative recombination rate coefficients and three-body recombination rate coefficients, it shows that the maximum value of the radiation recombination rate coefficient is 22.6% of the DR rate coefficient and the maximum value of the three-body recombination rate coefficient is only 0.3% of the DR rate coefficient. The total DR rate coefficient is greater than either the radiative recombination or three-body recombination coefficients in the whole temperature range. The corresponding DR process is very important for plasma ionization distribution, population level and spectrum simulation. In addition to facilitate the application, the total DR rate coefficients for the ground state and the first excited state are fitted to an empirical formula. These results will provide the reference for the further analyses of rhenium laser plasma spectrum simulation and the complex structures ions DR process.     

KLL dielectronic recombination process of He-like to O-like xenon ions

In this work,the KLL dielectronic recombination (DR) processes of highly charged He-like to O-like xenon ions are studied systematically by using a DR program,which is based on the multi-configuration Dirac-Fock (MCDF) method.The KLL DR resonant energies and the corresponding resonant strengths are calculated,emphasizing especially the effect of the Breit interaction on the DR strengths.The theoretical KLL DR spectra are obtained and compared with the latest experimental results obtained in the Shanghai Electron Beam Ion Trap.     

The KLL dielectronic recombination processes for highly charged krypton, iodine and barium ions

The KLL dielectronic recombination (DR) processes of ions from highly charged helium-like to oxygen-like krypton, iodine and barium ions are studied systematically in the relativistic distorted-wave approximation with configuration interaction. The KLL DR resonant energies, the corresponding resonant strengths and the theoretical spectra for each highly charged ion species are obtained. The results accord well with other available values. The behaviour of KLL resonant strengths for He-like ions with atomic number Z is analysed.     

EAST快速极紫外光谱仪绝对强度的原位标定

磁约束等离子体中杂质(特别是高Z杂质)的存在将大大增强等离子体辐射功率损失，破坏等离子体的约束性能。杂质行为的定量研究首先要求对杂质测量的光谱诊断系统进行绝对强度标定，获得灵敏度响应曲线。介绍了EAST托卡马克上的快速极紫外光谱仪系统绝对强度的原位标定方法。在波长范围20～150Å内，通过对比极紫外(EUV)波段连续轫致辐射强度的计算值和测量值得到光谱仪的绝对强度标定。在此过程中，首先由(523±1) nm范围内可见连续轫致辐射强度的绝对测量值计算出有效电荷数Z_eff，进而结合电子温度和密度分布计算EUV波段连续轫致辐射强度；EUV波段连续轫致辐射强度的测量值即为不同波长处探测器的连续本底计数扣除背景噪声计数值。对于较长波段范围130～280Å，通过对比等离子体中类锂杂质离子(Fe23+，Cr21+，Ar15+)和类钠杂质离子(Mo31+，Fe15+)发出的共振谱线对(跃迁分别为1s22s 2S_1/2-1s22p 2P_{1/2, 3/2}及2p63s 2S_1/2-2p63p 2P_{1/2, 3/2})强度比的理论和实验值进行相对强度标定。其中共振谱线对强度比的理论值由辐射碰撞模型计算得到，模型中处在各个能级的离子数主要由电子碰撞激发，去激发以及辐射衰变三个过程决定。两种方法相结合，实现了光谱仪20～280Å范围的绝对强度标定。考虑轫致辐射、电子温度及电子密度的测量误差，绝对标定误差约为30%。在绝对标定的基础上，我们对杂质特征谱线强度进行绝对测量，并将测量结果与杂质输运程序结合ADAS(Atomic Data and Analysis Structure)原子数据库计算得到的模拟值进行比较，进而估算等离子体中的杂质浓度。     

Dielectronic Recombination of Sn^10＋ Ions and Related Satellite Spectra

Based on the multi-configuration Dirac-Fock method, theoretical calculations are carried out for the dielectronic recombination （DR） rate coefficients and the collision excitation rate coefficients of Sn^10＋ ions. It is found that the total DR rate coefficient has its maximum value between 10eV and 100eV and is greater than either the radiative recombination or three-body recombination rate coefficients （the number of free electrons per unit is 10^21 cm^3） for the ease of Te 〉 1 eV. Therefore, DR can strongly influence the ionization balance of laser produced multi-charged tin ions. The related dieleetronie satellite cannot be ignored at low temperature Te 〈 5 eV.     

CVD法单层MoS2在209Bi离子辐照下的损伤效应研究

通过光学显微镜、拉曼光谱确定了CVD（化学气相沉积法）制备的不同厚度MoS₂的层数,采用拉曼分析结合原子力显微镜观测分析了由HIRFL提供的高能209Bi离子辐照CVD制备的单层MoS₂样品随辐照注量的损伤规律。随辐照注量增加,E_2g1和A_1g两种声子振动模式对应的拉曼峰逐渐蓝移,且拉曼特征峰强度减弱,这是由于带正电荷的209Bi辐照产生潜径迹型晶格缺陷吸附空气中氧分子而引入p型掺杂引起的。同时,在辐照注量为5×1010 ions/cm2的单层MoS₂的AFM图像中观察到潜径迹主要以凹坑形式出现,与机械剥离法观测到的凸起径迹明显不同,分析了不同制备工艺对径迹形貌的影响。比较了机械剥离法制备MoS₂样品的拉曼光谱和AFM成像的实验数据和结果,认为不同制备方法会影响单层或少层MoS₂的电子密度。The layer number of MoS₂ with different thickness was determined by the optical microscope and Raman spectra. And the damage effect of the CVD (chemical vapor deposition) prepared single-layer MoS₂ sample irradiated by 209Bi ions was analyzed by the combination of Raman analysis and AFM observations. With the increase of irradiation fluence, the Raman characteristic peaks of E_2g1 and A_1g corresponding to both phonon vibration modes gradually bluely shift, and the intensity of the peaks obviously decreased. This is due to the fact that the 209Bi ion irradiation results in the latent track type lattice defects and they adsorb the oxygen molecules in the air ended with the p-type doping. Meanwhile, from the AFM image of the mono-layer of irradiated MoS₂ under the 5×1010 ions/cm2, it can been seen that latent tracks mainly occur in the form of pits, which different from the hillock tracks observed by mechanical stripping method. The influence of different preparation technology to the track morphology is analyzed. Compared with the Raman and AFM results of MoS₂ prepared by mechanical stripping, it is considered that different preparation methods will affect the electron density in single or few layers of MoS₂.     

Hg~+离子5d~(10)6s ~2S_(1/2)→5d~96s~2 ~2D_(5/2)钟跃迁同位素位移和超精细结构的理论研究

本文首先在Dirac-Hartree-Fock近似下理论评估了Hg~+离子5d~(10)6s ~2S_(1/2)→5d~96s~2 ~2D_(5/2)钟跃迁的质量位移(mass shift, MS)和场位移(field shift, FS)在其同位素位移(isotope shift, IS)中的相对贡献,发现MS远小于FS而可以被忽略.在此基础上,通过系统地考虑该原子体系中主要的电子关联效应,计算了这条钟跃迁FS的精确值以及涉及到的上下两个能级的超精细结构常数,并得到了几种稳定汞同位素离子该跃迁的IS和超精细结构分裂.其中,计算的~(199)Hg~+和~(198)Hg~+离子之间的钟跃迁频率偏移与已有实验测量值相比误差为2%左右.最终,本文给出了汞离子7种常见同位素该谱线的绝对频率值,为实验上的谱线测量提供了有效的理论依据.     

用于CSRe上16O5+离子精密激光谱学实验的极紫外光子探测系统的研制

高电荷态离子的精密谱学研究不仅为强场QED效应、相对论效应、电子关联效应等基础前沿理论模型的精确检验提供了良好的条件,而且对同位素移动、高电荷态离子光钟等诸多前沿物理研究具有重要意义。为了在兰州重离子加速器冷却储存环的CSRe上开展相对论能量类锂16O5+离子2s_1/2→2p_1/2和2s_1/2→2p_3/2光学跃迁精密测量的激光谱学实验研究,研制了一套适用于前向发射荧光收集测量的新型非拦截式极紫外光子探测系统。该探测系统主要由抛物面型SiC反射镜、镀有CsI的微通道板(MCP)探测器以及高速步进电机等部分组成。在CSRe的高温烘烤环境和超高真空实验环境下,该探测系统能够在不影响储存环内离子束正常运转的同时实现对极紫外波段(50~200 nm)前向发射光子的高效探测,其探测效率较CSRe上现有光子通道倍增管荧光探测器提升约50倍。该探测系统不仅能够为CSRe上高电荷态离子的精密激光谱学实验提供高效实时的探测工具,亦为将来在大科学装置HIAF上开展更高能量、更高电荷态重离子的精密激光谱学实验研究奠定了坚实的基础。     

稀土掺杂的NaGdF4上转换发光材料的合成与发光特性研究

采用水热法制备了一系列不同掺杂浓度的NaGdF₄:Re(Re=Tm³⁺,Er³⁺,Yb³⁺)上转换发光粉。通过X射线衍射(XRD)、电子扫描电镜(SEM)和上转换发射光谱对样品进行了表征。XRD研究结果表明:合成的样品均为六方结构NaGdF₄。估算的平均晶粒尺寸为41~43 nm。在980 nm红外光激发下,Er³⁺和Yb³⁺共掺杂的NaGdF₄发光粉发出分别来自于Er³⁺离子²H_{11/ 2},⁴S_3/2→⁴I_15/2跃迁的绿光和⁴F_9/2→⁴I_15/2跃迁的红光发射,Tm³⁺和Yb³⁺共掺杂的NaGdF₄发光粉发出分别来自Tm³⁺离子的¹G₄→³H₆跃迁的蓝光、¹G₄→³F₄和³F_2,3→³H₆跃迁的红光和³H₄→³H₆跃迁的近红外光发射。Er³⁺,Tm³⁺和Yb³⁺共掺杂的NaGdF₄发光粉的发光强度及红、绿、蓝光发射的相对强度受Yb³⁺离子掺杂浓度的影响。对样品中可能的上转换发光机制进行了讨论。计算的色坐标显示:可通过改变掺杂离子浓度对上转换发光的颜色进行调控。     

YNbO4：Tm3+/Yb3+上转换发光特性研究

按照50Nb₂O₅-（46-x）Y₂O₃-4Yb₂O₃-xTm₂O₃（x=0.1,0.2,0.5,1,2）的配比方式,采用高温固相法制备出了掺杂Tm³⁺/Yb³⁺的YNbO₄晶体粉末。在980 nm红外光激发下,观测到波长为478,645,707 nm的上转换荧光,分别对应于Tm³⁺离子的¹G₄→³H₆、¹G₄→³F₄、³F₃→³H₆能级跃迁过程。利用上转换发射功率与980 nm激光器工作电流关系估算出跃迁过程吸收光子数目为2.72,2.69,2.01,从而确定出前两者为三光子吸收过程,最后一个对应于双光子吸收过程。运用Judd-Ofelt理论研究样品光谱特性,根据样品的吸收谱得到样品的谱线强度参数Ω_t（t=2,4,6）,进而得出理论振子强度及实验振子强度,二者均方根偏差δ_rms=1.299×10^-7。计算了Tm³⁺离子向下能级跃迁的跃迁几率、跃迁分支比等参数。最后得出结论：（1）³F₄能级寿命较长,适合作为上转换中间能级;（2）³H₅能级寿命较长,且³H₅→³H₆跃迁分支比（96.46%）接近100%,可用于产生1 216 nm激光。     

用同步辐射研究掺Tb3+氟化物K2GdF5的光谱和Gd3+-Tb3+能量传递

对比了不同激发波长下水热法合成的K2GdF5:Tb3+(摩尔分数0.5％)单晶材料的光致发光谱线;监测了5 D3→7F6和5 D4→7 F5的激发谱,给出了几组窄带吸收和3个宽带吸收;分析表明窄带发射为Gd3+的8 S7/2→6FJ、8S7/2→6GJ、8S7/2→6DJ、8S7/2→6IJ的跃迁,宽带发射为Gd3+的...     

掺杂离子对白色长余辉发光材料Y2O2S:Tb3+, Eu3+,M2+ (M=Mg,Ca, Sr,Ba),Zr4+性能的影响

采用高温固相法制备了白色长余辉发光材料Y₂O₂S:Tb³⁺, Eu³⁺,M²⁺(M=Mg, Ca, Sr, Ba), Zr⁴⁺, 利用X晶体衍射、发光光谱、余辉曲线和热释光曲线等对制备的材料进行表征。结果表明:掺杂离子没有改变样品晶体结构和发射峰的位置,但对其发光强度、余辉时间及陷阱深度有较大的影响。在263 nm紫外光的激发下,469 nm和626 nm的发射分别对应于Eu³⁺的⁵D₂→⁷F₀、⁵D₀→⁷F₂跃迁,544 nm的发射对应于Tb³⁺的⁵D₄→⁷F₅跃迁,主要通过它们的混合产生白光。掺杂不同二价离子样品的余辉性能按Mg²⁺、Sr²⁺、Ca²⁺、Ba²⁺的顺序递减,其中掺杂Mg²⁺的样品,色度坐标为(0.29,0.32),陷阱深度为1.17 eV,余辉时间长达320 s(≥1 mcd/m²),表现出最佳的发光性能。     

Er3+/Yb3+共掺NaYF4/LiYF4微米晶体的上转换荧光特性

采用水热法成功制备了Er³⁺/Yb³⁺共掺杂的NaYF₄和LiYF₄微米晶体. 通过X射线衍射仪和环境扫描电子显微镜对样品的晶体结构及形貌进行表征. 实验结果表明: 六方相NaYF₄微米晶体为棒状结构, 而四方相LiYF₄微米晶体则为八面体结构. 在近红外光980 nm激发下, NaYF₄:Yb³⁺/Er³⁺和LiYF₄:Yb³⁺/Er³⁺ 微米晶体均展现出很强上转换荧光发射. 且NaYF₄:Yb³⁺/Er³⁺微米晶体的荧光发射强度大约是LiYF₄:Yb³⁺/Er³⁺微米晶体的2倍, 但红绿比明显较低. 根据荧光光谱, 并借助激光光谱学及发光动力学深入探讨基质变化及表面修饰剂乙二胺四乙二酸(EDTA)对荧光特性的影响. 实验结果发现: 影响荧光强度的主要因素是基质环境的局域对称性, 而导致不同红绿比则是由于样品表面较多的EDTA分子所引起. Er³⁺掺杂的NaYF₄和LiYF₄ 微米晶体呈现出很强的绿光发射可被应用于全色显示, 荧光粉和微光电子器件中.     

Mn2+离子掺杂的NaTaOGeO4:Tb3+的发光性能

采用高温固相法制备了颜色可调的NaTaOGeO₄∶Tb³⁺,Mn²⁺荧光粉,并研究了其发光特性以及能量传递机理。在244 nm激发下,NaTaOGeO₄∶Tb³⁺的发射光谱的发射峰分别位于380,413,436,492,544 nm,分别属于Tb³⁺的⁵D₃→⁷F_J和⁵D₄→⁷F_J（J=6,5,4）能级跃迁,为蓝光和绿光发射。在280 nm波长激发下,在492 nm和544 nm处有较强的发射峰,分别属于Tb³⁺的⁵D₄→⁷F₆、⁵D₄→⁷F₅能级跃迁,为绿光发射。在248 nm波长激发下,NaTaOGeO₄∶Mn²⁺的发射光谱由位于576 nm处的宽带组成,属于Mn²⁺的⁴T₁→⁶A₁能级跃迁。当在NaTaOGeO₄∶Tb³⁺荧光粉中共掺杂Mn²⁺时,可以同时观察到Mn²⁺和Tb³⁺的发射峰,通过改变浓度掺杂比,可以得到颜色可调控的荧光粉。     

Y3+和Gd3+对LaBO3:Eu3+发光粉结构和发光性能的影响

采用溶胶凝胶-燃烧法合成了系列不同掺杂浓度Y³⁺和Gd³⁺的LaBO₃∶Eu³⁺发光粉,对其结构、形貌和发光性能进行了表征。XRD研究结果表明：发光粉的结构与基质掺杂离子的种类和掺杂浓度有关系。荧光光谱结果表明：适量比例Y³⁺和Gd³⁺离子掺杂将提高LaBO₃∶Eu³⁺发光粉的发光强度。Y³⁺和Gd³⁺离子最佳掺杂摩尔分数分别为1.5%和12.5%。⁵D₀→⁷F₂与⁵D₀→⁷F₁跃迁发射的相对强度比值说明：掺杂改变LaBO₃∶Eu³⁺中Eu³⁺局域环境的对称性。发光性能改变主要受晶体结构、掺杂离子电负性影响。Gd³⁺离子掺杂更有利于发光粉结构稳定性和发光性能的改善。     

共掺杂Ce~(3+)调控β-NaLuF_4:Yb~(3+)/Ho~(3+)纳米晶体的上转换荧光发射

在980 nm近红外光激发下,通过共掺杂Ce~(3+)离子调控六方相NaLuF_4:Yb~(3+)/Ho~(3+)纳米晶体的上转换荧光发射.实验结果表明,当掺杂Ce~(3+)离子浓度从0增加到12.0%时,Ho~(3+)离子的上转换荧光发射实现了由绿光向红光的转变,其红绿比提高了近24倍.根据Ho~(3+)离子的能级结构发现,Ho~(3+)离子的红光发射源自~5F_5能级到5I8能级的辐射跃迁,因此要增强红光发射,必须提高该能级粒子数布居.Ho~(3+)与Ce~(3+)离子之间相近的能级差促使它们之间产生了共振交叉弛豫,从而有效地提高了Ho~(3+)离子~5F_5能级的粒子数布居,增强了红光发射.同时对Ho~(3+)离子的上转换调控机理进行讨论,并借助不同的激发策略,进一步证实了Ho~(3+)与Ce~(3+)离子之间相互作用的发生.